Dielectric properties for Tantalum-doped strontium barium titanate thin films prepared by sol-gel method

In this work, Sr_0.5Ba_0.5Ti_1-zTa_zO₃ (SBT) thin films were prepared on a Pt/SiO₂/Si substrate by sol-gel process. The microstructures of SBT thin films were examined by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The influences of Ta on the microstructure and dielectric properties of SBT thin films were studied. It is found that tetragonal perovskite crystal grains existed in SBT thin films. Ta⁵⁺ doping fines the grain of SBT thin films. It is found that Ta⁵⁺ doping decreases dielectric loss for SBT thin films.     

The influence of microstructure on the electronic properties of thin films of barium strontium titanium oxide composites

Abstract

Microstructural and electrical properties were investigated for barium strontium titanium oxide (BSTO) magnesium oxide doped (0 to 10 wt.%) thin films deposited by the pulsed laser deposition (PLD) method on Pt/TiO_x/SiO₂/Si substrates. The dielectric properties were found to be strongly dependent on composition and microstructure. In cross-section, all films exhibited a columnar polycrystalline microstructure with vertical orientation deviations dictated by the surface roughness of the Pt electrode. A uniform granular microstructure was observed for all films in plan view. The dielectric constant, loss tangent and grain size decreased with increasing MgO concentration.     

Ferroelectric and dielectric properties of sol-gel and excimer-laser-deposited lead zirconate titanate and barium titanate films

Abstract

Switched remanent polarization was measured as a function of accumulated switching cycles for a variety of ferroelectric films using sinusoidally driven hysteresis loops. Switched remanent polarization and dielectric constant and loss were also obtained as a function of the cycling frequency. PZT films with niobium additives appeared to lose switched remanent polarization with accumulated cycles at a lesser rate than films without niobium. The switched remanent polarization was found to decrease with increasing frequency, which we attribute to the effect of grain size. Also, a decrease of dielectric constant with increasing frequency and an increase of dielectric constant with increased applied voltage are attributed to the effects of domain wall motion contributions to dielectric constant.     

Fatigue and dielectric properties of undoped and Ce doped PZT thin films

Abstract

Ce doping improves the ferroelectric properties of sol-gel derived PZT thin films by facilitating easier domain wall movement. It also decreases the leakage current densities by reducing the concentration of free carriers through a decrease in concentration of Pb and O vacancies. Ce-PZT films retain good dielectric dispersion characteristics since the concentration of defects and defect dipoles are reduced. Ce doping dramatically improves the fatigue resistance of PZT thin films. We have studied the frequency dependence of fatigue behavior and shown that the loss of polarization due to fatigue follows a universal scaling behavior with N/f², where N is the number of the switching cycles and f is the frequency. The origin of the scaling is attributed to the drift of oxygen vacancies, which is the rate limiting process in the growth of the interface layer responsible for fatigue. Empirical fits for both undoped and cerium doped samples show that switchable polarization follows a stretched exponential decay with time or N/f. Cerium doping is believed to improve fatigue resistance by impeding the motion of oxygen vacancies.     

Substrate effect on in-plane ferroelectric and dielectric properties of Ba0.7Sr0.3TiO3 thin films

Heteroepitaxial Ba_0.7Sr_0.3TiO₃ thin films were grown on (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.35 (001) (LSAT) and SrTiO₃ (001) (STO) single crystal substrates using pulsed laser deposition (PLD). X-ray diffraction characterization revealed a good crystallinity and a pure perovskite structure for films grown on both LSAT and STO substrates. The in-plane ferroelectric and dielectric properties of the films were studied using interdigital electrodes (IDE). The film grown on LSAT substrate exhibited an enhanced in-plane ferroelectricity, including a well-defined P-E hysteresis loop with the remnant polarization P _r = 10.5 μC/cm² and a butterfly-shaped C-V curve. Nevertheless, only a slim hysteresis loop was observed in the film grown on STO substrate. Curie temperature T _c of the film grown on LSAT substrate was found to be ∼105^∘C, which is nearly 70^∘C higher than that of the bulk Ba_0.7Sr_0.3TiO₃ ceramics. T _c of the film grown on STO substrate has almost no change compared to the bulk Ba_0.7Sr_0.3TiO₃ ceramics. The dielectric tunabilities were found to be 64% and 52% at 1 MHz for the films grown on LSAT and STO substrates, respectively.     

Effect of Gd doping on crystalline orientation,structural and electric properties of PZT thin films prepared by Sol-Gel methods

Gadolinium (Gd)-doped lead zirconium titanate (PGZT) thin films have been prepared by Sol-Gel methods to investigate the effects of Gd doping on crystalline orientation, structural and electric properties of lead zirconium titanate (PZT) films according to doping concentration from 0% to 5%. Conventional heat process and appropriate doping concentration, without introducing a single crystal seed layer, were used for obtaining (100)-oriented PGZT thin films with dense columnar structures. The maximum dielectric constant (1310.35 at 100 Hz) and the optimum ferroelectric properties were obtained for 2% Gd-doped film. 1% Gd-doped PZT film exhibited excellent piezoelectric properties.     

Microstructures and dielectric properties of Zn2SnO4 thin films by sputtering from a ZnO doped ceramic target

The dielectric properties of Zn₂SnO₄ thin films with various degrees of ZnO dopant concentration were investigated. Zn₂SnO₄ thin films were prepared using the radio frequency magnetron sputtering. The X-ray diffraction patterns of the 0 and 75 mole % ZnO doped Zn₂SnO₄ thin films revealed that Zn₂SnO₄ is the main crystalline phase, which is accompanied by a little SnO₂ as the second phase. The second phase SnO₂ in specimens vanished when the extent of ZnO additive was increased to 100 mole%. A dielectric constant of 15–40 and a loss factor of 0.10–0.14 of Zn₂SnO₄ thin films were measured at 1 MHz with ZnO dopant concentration in the range of 0–100 mole%.     

Investigation of the effects of milling ceramic targets on the optical and electrical properties of BST thin films deposited by RF sputtering

Abstract

The RF sputtering method was utilized to deposit thin films of Ba_1-xSr_xTiO₃ (BST). The targets utilized in these experiments were prepared from ceramic powders with different particle size. The goal of this work is to examine whether the particle size distribution of the target can affect the properties of the thin films fabricated by the sputtering method. The Atomic Force Microscope (AFM) was used to examine the grain size in the thin films. The composition of the thin films and the bulk materials were examined by Fourier Transform Infrared (FTIR) spectroscopy. The dielectric properties of the thin films were measured and compared to its bulk counterparts. It was found that on lattice matched electrodes of SrRuO₃ on LaAlO₃ substrates, the thin films deposited from ceramic targets manufactured from ball-milled powders had finer grain size than those deposited from targets made from unmilled powders. However, this phenomenon was not observed in the case of polycrystalline films deposited on platinized silicon wafers.     

Ferroelectric properties of heterolayered lead zirconate titanate thin films

Heterolayered Pb(Zr_{1 − x} Ti _x )O₃ thin films consisting of alternating PbZr_0.7Ti_0.3O₃ and PbZr_0.3Ti_0.7O₃ layers were successfully deposited via a multistep sol-gel route assisted by spin-coating. These heterolayered PZT films, when annealed at a temperature in the range of 600–700^∘C show (001)/(100) preferred orientation, demonstrate desired ferroelectric and dielectric properties. The most interesting ferroelectric and dielectric properties were obtained from the six-layered PZT thin film annealed at 650^∘C, which exhibits a remanent polarization of 47.7 μC/cm² and a dielectric permittivity of 1002 at 100 Hz. Reversible polarization constituents a considerably high contribution towards the ferroelectric hysteresis of the heterolayered PZT films, as shown by studies obtained from C-V and AC measurement.     

Excimer laser ablation processed ferroelectric and antiferroelectric thin films

Abstract

The dielectric and electrical properties of excimer laser ablated processed paraelectric (Ba_0.5, Sr_0.5)TiO₃, ferroelectric Bi-layered SrBi₂(Ta_0.5Nb_0.5)₂O₉, and antiferroelectric (PbZrO₃) thin films have been investigated. The effect of processing parameters on the microstructure of the films and the functional properties has been presented in detail. Some of the recent studies of stress induced effects, dielectric, hysteresis and ac and dc electrical properties have been highlighted in conjunction with microstructures of the films.     

Bottom electrode etching effect on the electrical properties of lead strontium titanate thin film

(Pb_0.4Sr_0.6)TiO₃ thin films were prepared by a modified sol-gel method on Pt/Ti/SiO₂/Si substrates, where lower figure of merit of about 16% was observed in spite of higher tunability above 58%. The electrode surface was etched with different CF₄ and Ar gas ratios to modify the surface roughness. The electrical properties of PST thin films were investigated as a function of etching condition and film thickness. With changing CF₄/(Ar+CF₄) gas composition, the dielectric loss and the figure of merit were apparently affected which can be explained in terms of the surface roughness of Pt bottom electrode. When the Pt electrode surface was etched by using CF₄/(Ar+CF₄) = 20% gas mixture, the improvement above 25–27% in dielectric loss and figure of merit was observed, according to the decreased rms value of Pt surface of ∼30%, from 1.8 to 1.2 nm. The etching effect was found to be dominant for the dielectric loss and the thinner films.     

Low-temperature synthesis of barium titanate thin films by nanoparticles electrophoretic deposition

The nanoparticles electrophoretic deposition (EPD) of barium titanate (BaTiO₃ or BTO) thin films was investigated. BTO nanocrystallites in a pseudocubic perovskite phase with an average particle size of about 10 nm were synthesized at a low temperature of 90°C by a high-concentration sol–gel process. By using a mixed solvent of 2-methoxyethanol and acetylacetone as dispersing medium, transparent and well-dispersed BTO nanocrystallites suspensions within the concentration range of 0.0125 to 0.20 mol/l was successfully prepared for nanoparticles EPD. A uniform microstructure and a smooth surface were observed on the deposited films. The film thickness of the deposited films increased rapidly with increasing EPD time in the initial period of EPD, and thereafter gradually increased to a limited thickness. With increasing applied EPD voltage, the limited film thickness increased. A near linear relation between the film thickness of films and the concentration of suspensions was observed under the same EPD conditions. The microstructures of the deposited BTO thin films were investigated.     

Structure and electrical properties of Ba0.67 Sr0.33TiO3 thin film fabricated by sol-gel based composite technique

A sol-gel based novel technique is used to fabricate Ba_0.67Sr_0.33TiO₃ (BST) thin films with thickness up to several microns. In this technique, surface-modified fine BST particles are dispersed in a sol-gel precursor solution. The pH value of the precursor solution is modified to achieve high zeta potential for the dispersed powder, hence a very stable and uniform slurry can be produced. The slurry is then spin-coated onto Pt/Ti/SiO₂/Si substrate, pre-heated and annealed as in conventional sol-gel process. The resulting films show well-developed dense polycrystalline structure with uniform grain distribution. The metal-BST-metal structure of the films displays good dielectric properties.     

Electrical conductivity and thermoelectric power of a-Ge20 Se80 − x Bi x thin films

The dc electrical conductivity and thermoelectric power of a-Ge₂₀Se_{80 − x} Bi _x (x = 0, 4, 6, 8, 10, 12) thin films are reported in the present work. The thin films were deposited by flash evaporation at 10^{− 5} Torr pressure and were well-characterized taking XRD, XRF, DSC and EPMA measurements of the system. The dc conductivity was measured over a temperature range 77 to 476 K. Conduction type and activation energies of electrical conductivity have been determined. The electrical transport takes place via two modes extended state conduction at higher temperatures and variable range hopping at lower temperatures. The conductivity was found to change by few orders of magnitude with Bi doping and the electrical activation energies (Δ E _σ) were found to decrease with increasing Bi content. The density of localized states and pre-exponential factor were determined. The thermopower measurements carried out using differential dc method in the temperature range 4.2 to 300 K and the activation energy (Δ E _s ) for TEP determined. The change in band gap with increasing Bi content is due to increased band tailing and increase of Bi–Se bonds and decrease of Se–Se bonds thus leading to the modification of the network structure of Ge₂₀Se₈₀ system.     

乙二胺四乙酸含量对M型钡铁氧体薄膜磁性能和微波性能的影响

采用有机金属裂解法在Pt/TiO2/SiO2/Si基板上制备M型钡铁氧体(Ba M)薄膜,并着重研究了螯合剂乙二胺四乙酸(EDTA)含量对Ba M薄膜结构、磁性和微波性能的影响。研究发现,当EDTA∶(Ba2++Fe3+)=1(摩尔比)时,Ba M薄膜形成较多的六角形状晶粒,而且磁性能和微波性能较佳,沿c轴生长的取向度高达0.91,饱和磁化强度Ms为302k A/m(μ0Ms=0.38T),在50GHz时铁磁共振线宽ΔH为22k A/m(277Oe)。这是因为适量的EDTA不仅在溶液挥发时能够阻止金属离子的分离和间歇性的沉淀,并且能够促进成形成均匀的前驱液,从而在前驱液分解时能促进形成Ba M,在经过热处理后易形成沿c轴取向、具有六角形状晶粒的Ba M薄膜。     

Oriented growth of Bi3.25La0.75Ti3O12 thin films on RuO2/SiO2/Si substrates by using the polymeric precursor method: Structural, microstructural and electrical properties

c-axis oriented Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were grown on a RuO₂ top electrode deposited on a (100) SiO₂/Si substrate by the polymeric precursor method. X-ray diffraction and atomic force microscope investigations indicate that the films exhibit a dense, well crystallized microstructure having random orientations with a rather smooth surface morphology. The electrical properties of preferred oriented Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films deposited on RuO₂ bottom electrode leaded to a large remnant polarization (P _r ) of 17.2 μC/cm² and (V _c ) of 1.8 V, fatigue free characteristics up to 10¹⁰ switching cycles and a current density of 2.2 μA/cm² at 5 V. We found that the polarization loss is insignificant with nine write/read voltages at a waiting time of 10,000 s. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s.     

Microstructure and dielectric properties of ferroelectric barium strontium titanate ceramics prepared by hydrothermal method

Ba _x Sr_1-x TiO₃, nanoparticles with different Ba compositions were synthesized by a hydrothermal method. The mechanism of hydrothermal reactions was discussed based on DTA/TG, XRD and TEM characterizations. The result showed that perovskite structure was developed through the mutual diffusion between the intermediate phases and TiO₂ phase. The grain size of the Ba_0.77Sr_0.23TiO₃ (BST77) powders was about 20–40 nm. BST ceramics were made from the hydrothermal-derived BST powders and the dielectric properties of the BST ceramics were measured. Due to the small grain size and active surface energy of the BST powders prepared by hydrothermal method, the BST ceramics showed low sintering temperature. It was found that the BST77 ceramics sintered at 1280 °C showed dielectric constant peak dispersion which was believed to be caused by dimension domino effect.     

Structural and mechanical properties characterization of barium strontium titanate (BST) ceramics

Ba_(1-x)Sr_(x)TiO₃ ceramics, where x?=?0.05, 0.10, 0.15, and 0.20, were prepared by solid state reaction technique. X-ray diffraction analysis confirmed the formation of single phase perovskite structures. Mechanical properties such as ultrasonic attenuation, longitudinal wave velocity, and longitudinal elastic modulus were studied by an ultrasonic pulse echo technique at 2 MHz. Investigations of ceramic microstructures and mechanical properties showed its dependence on composition and sintering time. Increasing of Sr content, x, resulted in a decrease in bulk density and ultrasonic attenuation and an increase in velocity and modulus. Also, size of crystallites and c/a ratio were found to decrease with increasing of x, and increased with increasing of sintering time. High temperature ultrasonic studies showed, in addition to Curie phase transition, two relaxation peaks and its origin was investigated. The acquired structural and mechanical results were correlated and discussed.     

Compositional dependence of electrical properties in plzst thin films

Abstract

The purpose of this work was to conduct a systematic study of lanthanum doped lead zirconate stannate titanate (PLSZT) thin films with compositions in the antiferroelectric tetragonal (AFE_T) and the antiferroelectric orthorhombic (AFE_O) region. The effects of varying factors such as Sn content, Zr content, etc. were studied. While the compositions in the AFE_T region demonstrate clear double hysteresis loops, there is always some remanent polarization when the electric field is removed. The remanent polarization decreases when compositions are chosen farther away from the ferroelectric-antiferroelectric phase boundary. On the other hand in the AFE_O region all the compositions show zero remanent polarization, especially those with higher Zr content which have previously seldom been studied. The results also show that these high Zr AFE_O compositions have high energy storage densities making them suitable for energy storage applications such as decoupling capacitors in high speed multichip modules.