Defect-related visible luminescence of ZnO nanorods annealed in oxygen ambient

ZnO nanorods prepared by a solution-phase method are annealed at different temperatures in oxygen ambient.The luminescence properties of the samples are investigated.In the same excitation condition,the photoluminescence(PL) spectra of all samples show an ultraviolet(UV) emission and a broad strong visible emission band.The asymmetric visible emis-sion band of annealed samples has a red-shift as the annealing temperature increasing from 200 ℃ to 600 ℃ and it can be deconvoluted into two subband emissions centered at 535 nm(green emission) and 611 nm(orange-red emission) by Gaussian-fitting analysis.Analyses of PL excitation(PLE) spectra and PL spectra at different excitation wavelengths reveal that the green emission and the orange-red emission have a uniform initial state,which can be attributed to the electron transition from Zn interstitial(Zni) to oxygen vacancy(Vo) and oxygen interstitial(Oi),respectively.     

ZnO：Ag薄膜的结构对其紫外发光增强的研究

利用脉冲激光沉积方法(PLD),在Si(100)衬底上生长了银掺杂的氧化锌薄膜(ZnO:Ag),所用的激光波长分别是1064 nm和355 nm.通过x射线衍射分析发现,两种不同激光沉积样品的晶体结构有很大的区别.此外,由1064 nm激光制备的ZnO:Ag薄膜,在氧气中800℃的条件下退火一个小时后,在其光致发光(PL)谱中发现,样品的紫外发光峰强度随薄膜中Ag含量增加而急剧增强,但在同样条件下处理的由355 nm激光制备的薄膜,没有观察到类似现象.经过分析和比较,我们认为这种紫外发光增强的特殊现象,是ZnO:Ag薄膜中的纳米Ag颗粒所引起的局部等离子共振而导致.     

氧化锌纳米棒中自发辐射的回音壁模腔增强

应用气相传输法制备了氧化锌纳米线和具有六方对称截面的纳米棒,利用电子扫瞄显微镜,X-射线衍射仪等进行形貌与结构表征。室温下,用355nm激光脉冲,以260 W/cm2相同光强激励条件,分别测量其光致发光(PL)谱,在棒状样品中发现393nm有发光峰,而线状样品是在382nm处。二者相比,棒状样品的紫光波段自发辐射光强增加、频谱展宽、中心波长红移和绿光波段辐射被显著抑制。基于半导体材料的能带理论、激子复合发光理论和费米黄金定则等,对样品PL谱差异原因进行理论分析,结果表明上述现象源于棒状样品中回音壁模谐振腔(WGMRs)的自发辐射增加。利用强激励条件下样品光致发光谱,验证了实验结果与理论分析结果较好吻合。     

射频磁控溅射ZnO薄膜的光致发光

用射频磁控溅射法在硅衬底上沉积出具有良好的择优取向的多晶ZnO薄膜.在室温下进行光致发光测量,观察到明显的紫光发射(波长为402nm)和弱的紫外光发射 (波长为384nm).紫光发射源于氧空位浅施主能级到价带顶的电子跃迁;紫外光发射则源于导带与价带之间的电子跃迁.随着光激发强度的增加,紫光发射强度超线性增强,且稍有蓝移,而紫外光发光强度则近似线性增加.在氧气中高温退火后,薄膜结晶质量明显提高,紫光发射强度变弱,紫外光发射相对增强.     

射频磁控溅射ZnO薄膜的光致发光

用射频磁控溅射法在硅衬底上沉积出具有良好的择优取向的多晶 Zn O薄膜 .在室温下进行光致发光测量 ,观察到明显的紫光发射 (波长为 4 0 2 nm )和弱的紫外光发射 (波长为 384 nm ) .紫光发射源于氧空位浅施主能级到价带顶的电子跃迁 ;紫外光发射则源于导带与价带之间的电子跃迁 .随着光激发强度的增加 ,紫光发射强度超线性增强 ,且稍有蓝移 ,而紫外光发光强度则近似线性增加 .在氧气中高温退火后 ,薄膜结晶质量明显提高 ,紫光发射强度变弱 ,紫外光发射相对增强 .     

Study on the fluorescence quenching of ZnO by graphene oxide

Zinc oxide (ZnO) microrod arrays were synthesized on Si substrate by a vapor phase transport (VPT) method in a tube furnace. The obtained ZnO microrods are characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The photoluminescence (PL) measurement indicates that the ZnO microrods have a strong ultraviolet (UV) emission centered at ~391 nm and a defect-related emission centered at ~530 nm. After the microrods were coated with graphene oxide (GO), the PL intensity of the hybrid microstructure is quenched compared with that of the bare one at the same excitation condition, and the PL intensity changes with the concentration of the GO. The fluorescence quenching mechanism is also discussed in this work.     

Profile-broaden ultraviolet lasing from whispering gallery mode cavity in crown-like zinc oxide

Based on the transfer matrix method,a detailed theoretical and numerical study on double-phase-shifted fiber Bragg grating(FBG)is investigated.Temporal responses of the double-phase-shifted FBG to optical pulse are analyzed and the influence of the two phase-shifts’position on the reflected output pulse is evaluated.Results demonstrate that very different temporal pulse waveforms can be achieved by adjusting the length ratio(α=L2/L1).Specifically,a transform-limited Gaussian input optical pulse can be shaped into flat-top square pulse(α=1.81)or two identical optical pulse sequences(α=1.93).     

基于PLD法制备ZnO:Eu3+,Li+薄膜的发光性质研究

采用脉冲激光沉积(PLD)技术在Si(111)衬底上生长了Eu3+、Li+共掺杂的ZnO薄膜。分别对样品进行了X射线衍射(XRD)谱测试和光致发光(PL)谱分析,重点研究了退火处理对样品结构和发射光谱的影响。XRD谱测试表明,样品具有很好的C轴择优取向。PL谱研究表明,当用325nm光激发样品时,样品的发射光谱仅由ZnO基质的紫外发射和蓝光发射组成,并没有发现稀土Eu3+的特征发光峰;样品的蓝光发射源于电子从Zn填隙形成的浅施主能级到Zn空位形成的浅受主能级跃迁;和真空中退火的样品相比,O2中制备的样品的蓝光发射减弱,紫外发光增强。用395nm的光激发时,退火前样品分别在594nm和613nm处存在两个明显的Eu3+特征发光峰,退火后的样品仅发现Eu3+位于594nm的特征发光峰,这表明,退火处理不利于稀土离子的特征发射,但O2中退火的样品ZnO基质红绿波段发射光谱明显增强。     

热氧化磁控溅射金属锌膜合成一维ZnO纳米棒

利用退火热氧化射频磁控溅射金属锌膜的方法在Si(111)衬底上制备了一维ZnO纳米棒,同时用多种测试手段对样品的晶体结构、表面形貌和光学性能进行了研究.XRD,SEM和TEM的测试结果表明,ZnO纳米棒为单晶相六方纤锌矿结构,呈头簪状向外发散生长,直径在30～60nm左右,其长度可达几μm.PL谱测试结果表明:在波长为280nm光的激发下,在372nm处有强的近带边紫外光发射和516nm处的较微弱深能级绿光发射.说明合成的一维ZnO纳米棒的结晶质量和光学性能优良.     

热氧化磁控溅射金属锌膜制备ZnO纳米棒

利用射频磁控溅射技术在Si(111)衬底上制备金属锌膜 ,在空气中退火热氧化合成了一维ZnO纳米棒。用X射线衍射 (XRD) ,扫描电子显微镜 (SEM) ,透射电子显微镜 (TEM)和光致发光谱 (PL)对样品进行了结构、形貌及光学特性分析。结果表明 :ZnO纳米棒为六方纤锌矿结构单晶相 ,直径在 30～ 6 0nm左右 ,其长度可达5～ 8μm左右。在 2 80nm波长光激发下 ,有很强的 372nm带边紫外光发射和较微弱的 5 16nm深能级绿光发射 ,说明合成的单晶ZnO纳米棒的质量较高     

Yb3+/Er3+共掺ZnF2粉末上转换发光特性研究

为了研究ZnF₂作为基质材料、稀土离子Yb3+和Er3+共掺摩尔分数不同时的发光性能,采用高温固相法,在820℃时制备稀土掺杂ZnF₂样品,并对各个样品进行上转换发射光谱测试。将激发功率与上转换发射功率进行曲线拟合,确定Yb3+和Er3+光子吸收过程。结果表明,在980nm半导体激光器激发下,样品在可见光区域内存在533nm,555nm和655nm 3个上转换发射峰,发射的红光强度大于绿光强度,吸收光子数目依次为1.73,1.75,1.88,确定3个发射峰均对应于双光子吸收。此研究说明稀土离子掺杂ZnF₂材料将在上转换红色荧光粉领域有重要的应用前景。     

ZnO纳米棒水热法制备及其发光特性研究

采用氢氧化钾(KOH)和二水醋酸锌(Zn(CH3COO)2.2H2O)配制不同浓度的反应溶液,反应过程中加入表面活性剂聚乙二醇(HO(CH2CH2O)13H),在80℃水热反应条件下制备出了优异的ZnO纳米材料。采用扫描电镜(SEM)、X射线衍射(XRD)、荧光光谱仪等测试方法研究了样品的成分、表面形貌和微结构。SEM研究结果显示:样品沿c轴择优生长,径粒分布均匀,长径比高,为六方纤锌矿结构的ZnO纳米棒和菊花状ZnO纳米棒。光致发光谱性能分析显示样品在392 nm附近具有很强的紫外光发射能力,随着反应物浓度的增加,紫外峰发生约3 nm的蓝移,同时,样品还在绿光535 nm附近有较弱的光致发光现象。以上结果表明所制备的ZnO纳米材料具有优异的紫外光发射能力。     

Vibrational and thermal studies of CdSe nanorods

We report the characterization of axial nanorods of cadmium selenide (CdSe), synthesized by soft chemical route using mercapto ethanol as a capping agent. Crystallization temperature of the sample is investigated using differential scanning calorimeter. Kissinger equation is applied to the thermo-grams of differential scanning calorimeter to calculate the thermal activation energy of the sample, which is found to be 1.67 eV. The rod like shape of the sample is confirmed by transmission electron microscope (TEM) and scanning electron microscope (SEM) measurement. The selected area electron diffraction pattern, high resolution TEM image and X-ray diffraction pattern of the sample indicate the cubic structure. The band gap of the sample is obtained using Tauc relation to UV–visible spectrum and found to be 1.98 eV. The photoluminescence (PL) emission spectra of the sample are measured at various excitation wavelengths. The PL spectra appear in the visible region, and the emission feature depends on the wavelength of the excitation. The Raman and infra-red spectra of the samples are analyzed to obtain the vibrational modes and normal modes of the samples.     

SnO2纳米棒阵列的制备及光学、场发射性能研究

采用简单的一步水热法直接在不锈钢基底上制备了不同形貌的SnO2纳米棒阵列。利用X射线衍射（XRD）,扫描电镜（SEM）、透射电镜（TEM）、 分光光度计、场发射装置对材料的结构、形貌、光致发光谱和场发射特性进行了表征。XRD结果表明不锈钢基底上制备的样品为四方晶系金红石结构。SEM和TEM结果表明不同的反应条件下都能够在基底上大面积的垂直生长单晶SnO2纳米棒阵列,但是形貌和尺寸发生了改变（A:针尖状,B:铅笔状）。室温下的光致发光光谱（PL）表明两种样品在367、392、419 nm处分别存在较强的发射峰,并且紫外光峰强与可见光峰强比值较大,说明样品的结晶质量较好。场发射测试结果表明:两种样品的场发射都是通过电子隧道效应进行的,且样品A的场发射性能优于样品B。     

纳米晶ZnO:Dy3+粉体的制备和发光性质

通过固相反应法制备了ZnO:Dy3+纳米粉末,样品的X射线衍射、透射电镜和选区电子衍射证实了ZnO:Dy3+纳米粉末属于六方纤锌矿多晶结构.研究了光致发光谱与激发波长和掺杂离子浓度的依赖关系.结果表明,从ZnO:Dy3+纳米粉末的光致发光光谱中首次发现除了Dy3+的4f→4f跃迁外,出现了Dy掺入ZnO后产生的两个缺陷A和B的宽谱带发射峰,峰值分别在600和760nm,半高宽分别约为200和100nm.在ZnO的激子激发下(385nm),峰值760nm的发光强度远远大于峰值在600nm的发光强度.样品的发射光谱中峰值的相对强度变化依赖于激发波长和Dy3+的掺杂浓度.当在Dy3+4f→4f激发下(454nm),光谱中只有Dy3+的4f态间的特征发射,而缺陷A,B不发光.     

Au/SiO_2纳米复合薄膜的结构表征及光致发光特性

采用磁控溅射和退火技术制备出Au/SiO2纳米复合薄膜。利用扫描电子显微镜(SEM),X射线衍射(XRD)和原子力显微镜(AFM)对上述纳米复合薄膜进行了结构表征。实验结果表明,纳米复合薄膜的表面上均匀分布着直径在100～300nm的金纳米颗粒。金纳米颗粒的大小随着退火时间的增加而增大。用荧光光谱仪(PL)对薄膜的光致发光特性进行了研究。结果表明,在激发波长为325nm时,分别在525nm和560nm处出现两个发光峰;在激发波长为250nm时,在325nm处出现发光峰,这一发光峰可能与非晶SiO2的结构缺陷有关。     

A Ligand Exchange Route to Highly Luminescent Surface‐Functionalized ZnS Nanoparticles and Their Transparent Polymer Nanocomposites

A facile ligand exchange approach for surface‐functionalized ZnS nanoparticles (NPs) with 5‐(2‐methacryloylethyloxymethyl)‐8‐quinolinol (MQ) is described. The MQ–ZnS NPs, with a cubic crystal structure, have the same diameter as ZnS NPs without MQ about 3.0 nm. The MQ–ZnS NPs exhibit strong fluorescence emission at about 500 nm and a high photoluminescence (PL) quantum yield (QY), up to 40%, with a decreasing ratio of MQ to ZnS NPs. The PL decay study reveals that the lifetimes of the different MQ–ZnS NPs with a single exponential decay are in the nanosecond time domain for emission at about 500 nm, which is obviously different from that of ZnS NPs with a biexponential decay for defect‐state emission at 420 nm. The functionalized MQ–ZnS NPs are successfully incorporated into the polymer matrix by in situ bulk polymerization to fabricate transparent bulk nanocomposites with good thermal stability and processability. Transmission electron microscopy results show that the NPs are uniformly dispersed in the polymer matrix without aggregation. The good PL properties of MQ–ZnS NPs are preserved in the bulk nanocomposites. It is observed that the nanocomposites have red‐shifted excitation and emission wavelengths compared with those of both the polymer matrix and MQ–ZnS NPs, possibly because of the cooperative interaction between MQ–ZnS NPs and the polymer matrix with blue emission.     

Comparative study of the carbon nanofilm and nanodots grown by plasma-enhanced hot filament chemical vapor deposition

Carbon nanofilm and nanodots were grown by plasma-enhanced hot filament chemical vapor deposition using methane, hydrogen and nitrogen as the reactive gases. The results of field emission scanning electron microscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy indicate that the amorphous carbon nanofilm and nanodots are formed without and with nitrogen, respectively. The formation of carbon nanofilm and nanodots is the consequence of different sputtering-etching effects. The photoluminescence (PL) of carbon nanofilm and nanodots was studied in a SPEX 1403 Ramalog system using a 325 nm He–Cd laser as an excitation source and the PL spectra show the PL bands centered at about 411 and 513 nm for the carbon nanofilm and 405 and 504 nm for the carbon nanodots. Simultaneously, the PL results also indicate that the intensity of PL bands of carbon nanofilm is lower than that of carbon nanodots. The generation of different PL bands was interpreted by the transition mechanism. The difference in the intensity of PL bands is related to the size of carbon nanodots. The electron field emission (EFE) characteristics of carbon nanofilm and nanodots were investigated in a high-vacuum system. The results show that Fowler–Nordhelm curves are composed of two or three straight lines and the carbon nanofilm can emit a high current density, which originate from the diversification of carbon nanodots. The difference in the EFE results of carbon nanofilm and nanodots is associated to the size and number of carbon nanodots. These results can enrich our knowledge about carbon-based nanomaterials and are important to fabricate the carbon-based solid nanodevices in the field of optoelectronics.     

Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

The influence of dislocations on photoluminescence (PL) intensity in structures with InAs-GaAs quantum dots (QD) has been studied. The structural characteristics of samples were studied by transmission electron microscopy in bright-field and weak-beam dark-field diffraction conditions. At temperatures below room temperature and for moderate excitation density, the PL intensity in a structure containing large clusters with dislocations was about the same as in a structure with a significantly lower density of clusters. In contrast, the measurement of PL intensity at elevated temperatures and high excitation densities allows an accurate estimation of the structural perfection of QD structures. The overgrowth of QDs with a thin (1–2 nm) GaAs layer with subsequent annealing reduces the density of clusters with dislocations and significantly improves the temperature stability of the PL intensity.     

微量Co2+掺杂ZnO粉体的结构和光学性能研究

采用球磨法制备了Zn1-xCoxO(x=0,0.004,0.008)纳米粉体,分别利用XRD,PL光谱和紫外-可见吸收光谱对样品进行了表征。XRD图谱显示样品呈六方纤锌矿结构,随着Co2+离子掺杂量的增加,晶格常数和平均晶粒尺寸略有减小。在PL光谱上观察到三个发光带:370nm处的本征发光峰、468nm附近的强蓝光发光峰,以及533nm附近的绿光发光峰。和球磨样品相比,1 200℃退火的样品的发光强度明显增强,这归因于退火使样品晶粒长大。在紫外-可见吸收谱上可以观察到两个吸收带:由ZnO的带隙吸收引起的360～388nm的强紫外吸收带和由Co2+离子的d-d跃迁引起的565nm附近的可见光吸收带。因此通过调节Co2+掺杂量和选择适当的退火温度可制备高质量的发光材料。