共查询到19条相似文献,搜索用时 62 毫秒
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研究了电子和质子辐照下国产GaAs/Ge太阳电池电学性能退化规律。结果表明:小于200keV质子辐照下国内外GaAs/Ge电池等效损伤系数明显不同,原因是国内外太阳电池结构参数的不同引起的。高能质子和电子辐照下,国内外电池等效损伤系数结果相近,和电池结构关系不大,这是由于高能质子和能够造成电池位移损伤的电子更容易穿透电池,在电池中产生均匀损伤。通过计算透过防护盖片后的带电粒子能谱对JPL(Jet Propulsion Labo-ratory)的等效注量法进行了改进,在地球同步轨道环境下评价了国产GaAs/Ge太阳电池的在轨行为。 相似文献
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由于非晶硅光致衰退、微晶硅吸收系数低的原因,叠层结构电池成为提高电池效率和稳定性的有效途径.叠层电池各子电池较薄、太阳光的利用率较低,因此陷光结构在叠层电池中的作用尤其重要.具有绒面结构的前电极、叠层电池的中间层以及ZnO/Al或ZnO/Ag复合背电极共同组成硅薄膜太阳电池的陷光结构.中间层位于各子电池之间,作用是改变界面反射率,影响电池中光的传播路径.该文综述了叠层电池中间层的作用、要求以及此方面国内外的研究现状,并指出中间层研究中需要注意的主要问题和未来发展的趋势. 相似文献
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根据多晶硅电池对表面抗反射薄膜设计的需要,基于薄膜反射特征导纳矩阵理论结合电池的背底反射,建立了完善的表面反射和电池吸收计算模型,在已知薄膜复折射率的前提下可给出反射率的精确计算结果.利用该计算模型,设计了多种表面反射结构,其中硅量子点镶嵌氮化硅与二氧化硅组成的双层抗反射薄膜,在AM1.5光谱下其积分反射率最低可达到4.38%;分析了不同硅量子点体积比对于该双层抗反射膜的影响,系统给出了实际生长该双层抗反射层的具体参数,即富硅氮化硅中的Si:N=1:1时即可达到较好的表面抗反射效果. 相似文献
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400cm2 a-Si/a-Si叠层太阳电池的研究 总被引:6,自引:0,他引:6
以全部国产化装备和工业用原材料,以简单铝背电极制备出初始效率为8.28%,经室外阳光照射一年后稳定效率为7.35%,面积为20cm×20cm,有效面积为360cm2a-Si/a-Si叠层太阳电池。主要制备技术措施:(1)TCO/p界面接触特性的改善;(2)μc-SiC∶H/a-SiC∶H复合窗口层技术;(3)p/i界面H处理;(4)高质量本征a-Si∶H材料;(5)优良的n1/p2隧道结;(6)最佳电池结构设计等。 相似文献
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介绍采用蔡司C 20全站仪直接测定控制点三维坐标进行导线测量的作业方法,突破了传统的导线测量模式,不需分别测边、测角及内业计算就可自动测定三维坐标并自动平差。该方法操作简便、自动计算检核、精度高,可在水电工程中推广应用。 相似文献
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现代测量技术在煤矿测量中的应用具有重要性与必要性。叙述并分析了全站仪、全球定位系统、三维激光技术、惯性测量系统以及遥感测量技术等现代测量技术在煤矿测量中的应用。 相似文献
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Y. Yazawa K. Tamura S. Watahiki T. Kitatani J. Minemura T. Warabisako 《Solar Energy Materials & Solar Cells》1998,50(1-4):229-235
The epitaxial lift-off (ELO) technique was used in forming a thin-film GaInP/GaAs two-junction monolithic tandem solar cell structure. First, the GaInP single junction solar cell to be used in the tandem cell structure as a top cell was thinned by the ELO process. Although the ELO process and the transfer to the quartz substrate caused a strain in the thin-film cell after separation from the GaAs substrate, the photoluminescence peak intensity was not decreased. This shows that defects, such as those causing carrier loss, were not introduced on the thin-film cell during the thinning process. The key issue for thin-film cell fabrication is to avoid damaging the AlInP window layer during the selective etching (HF etchant), by which the thin-film cell is released from the GaAs substrate. A GaInP/GaAs monolithic tandem structure was also thinned by the same process with a GaInP single junction cell. Characteristics of the single-junction GaInP cell and individual cells in the GaInP/GaAs tandem structure were examined. It was found that the spectral response remains almost the same as that for cells with a GaAs substrate, thus confirming the feasibility of using the ELO process to fabricate thin-film GaInP/GaAs cells. 相似文献
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T. Kitatani Y. Yazawa S. Watahiki K. Tamura J. Minemura T. Warabisako 《Solar Energy Materials & Solar Cells》1998,50(1-4):221-227
We have developed an optimal growth procedure for gas-source MBE production of a GaInP/GaAs heterointerface. The interface quality is crucial to obtaining high-performance GaAs solar cells with a GaInP barrier layer because minority carrier lifetime depends strongly on the interface structure. In situ Reflective High-Energy Electron Diffraction (RHEED) observation during the growth across the GaInP/GaAs heterointerface revealed that the phosphorus atoms are replaced by arsenic atoms in the near-interface region of the GaInP layer, and a transient layer acting as a carrier trap is formed. Introduction of a GaP layer into the interface was found to be effective in suppressing carrier loss. From Composition Analysis by Thickness Fringe-Transmission Electron Microscopy (CAT-TEM) images, it was also found that the optimum thickness of inserted GaP to avoid the generation of misfit dislocations is 1 nm. 相似文献
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以太阳电池的短路电流积分表达式为依据,应用减反射膜的光学原理,对具有阳极氧化、SiO和SiO2三种减反射膜的AlxGa1-2As/GaAs太阳电池分别进行了反射光谱、短路电流、开路电压的实验测试。研究表明,阳极氧化膜、SiO膜具有良好的减反射性能,而SiO2膜的减反射性能较差。 相似文献
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Y. Yazawa J. Minemura K. Tamura S. Watahiki T. Kitatam T. Warabisako 《Solar Energy Materials & Solar Cells》1998,50(1-4):163-168
We report on process damage free thin-film GaAs cells detached from the GaAs substrates. GaAs cells grown by gas-source MBE were thinned by the epitaxial liftoff (ELO) technique. Photoluminescence spectroscopy showed a peak splitting in the band emission, indicating that a strain was induced in the thin-film cell fixed on the quartz glass substrate. The strain, however, was found not to affect the quality of the thin-film cells, based on the fact that the peak intensity was almost twice that before ELO. The thin-film GaAs cells showed no evidence of degradation in diode characteristics and spectral responses. The keys to avoiding damage on the active region of the solar cell during the thinning process are the introducing a GaInP window layer and improving the thin film process including metallization on thin film cells. These results demonstrates that the thinning and transfer processes dol-not affect the quality of the active region of the cells. 相似文献
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Kanglin Xiong Shulong Lu Jianrong Dong Taofei Zhou Desheng Jiang Rongxin Wang Hui Yang 《Solar Energy》2010,84(12):1975-1978
There are many difficulties limiting the further development of monolithic multi-junction solar cells, such as the growth of lattice-mismatched material and the current matching constraint. As an alternative approach, the light-splitting photovoltaic system is investigated intensively in different aspects, including the energy loss mechanism and the choice of energy bandgaps of solar cells. Based on the investigation, a two-dual junction system has been implemented employing lattice-matched GaInP/GaAs and InGaAsP/InGaAs cells grown epitaxially on GaAs and InP substrates, respectively. 相似文献
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The ac parameters of GaAs/Ge solar cell were measured under illumination at different cell temperatures using impedance spectroscopy technique. They are compared with the dark measurements. It is found that the cell capacitance is higher and cell resistance is lower under illumination than in dark for all cell terminal voltages. The cell capacitances at the corresponding maximum power point voltage (terminal) do not vary with temperature where as the cell resistance decreases. The cell capacitance under illumination is estimated from the dark cell capacitance and it is in good agreement with the measured illumination data. 相似文献