直流磁控溅射制备铝薄膜的工艺研究

采用直流磁控溅射方法，以高纯Al为靶材，高纯Ar为溅射气体，在玻璃衬底上成功地制备了铝薄膜，并对铝膜的沉积速率、结构和表面形貌进行了研究。结果表明：A1膜的沉积速率随着溅射功率的增大先几乎呈线性增大而后缓慢增大；随着溅射气压的增加，沉积速率先增大，在一定气压时达到峰值后继续随气压的增大而减小。X射线衍射图谱表明Al膜结构为多晶态；用扫描电子显微镜对薄膜进行表面形貌的观察，溅射功率为2600W，溅射气压为0．4Pa时制备的Al膜较均匀致密。     

RF磁控溅射制备Al_2O_3薄膜及其介电性能研究

以-αAl2O3为靶材,采用射频磁控溅射法制备了非晶Al2O3薄膜。利用X射线衍射仪、扫描电镜、划痕仪、表面粗糙轮廓仪和阻抗仪研究了不同溅射功率和不同溅射气压对薄膜制备的影响,探索了不同溅射功率下制备的Al2O3薄膜的介电常数和介电损耗与频率的关系。试验结果表明,制备的非晶Al2O3薄膜表面平滑致密;随着工作气压的增加,薄膜沉积速率增加;随着溅射功率的增加,Al2O3薄膜的沉积速率和介电常数逐渐增加、介电损耗逐渐减小;随着频率的增加,Al2O3薄膜的介电常数逐渐减小,高频阶段趋于稳定。     

溅射气压对直流磁控溅射ZnO:Al薄膜的影响(英文)

采用直流磁控溅射法在玻璃基片上沉积ZnO:Al(AZO)薄膜,溅射气压为0.2～2.2 Pa.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、四探针和紫外–可见分光光度计对AZO薄膜的相结构、微观形貌和电光学性质进行了表征.结果表明:薄膜的沉积速率随着溅射气压的增大而减小,变化曲线符合Keller-Simmons模型;薄膜均为六角纤锌矿结构,但择优取向随着溅射气压发生改变;溅射气压对薄膜的表面形貌有显著影响;当溅射气压为1.4 Pa时,薄膜有最低的电阻率(8.4×104 Ω·cm),高的透过率和最高的品质因子Q.     

工艺参数对直流反应磁控溅射ZnO:Al薄膜沉积速率的影响

实验以合金靶材在玻璃衬底上运用直流反应磁控溅射法制备了ZAO(ZnO:Al)透明导电薄膜样品.研究了O2气流量,衬底温度,以及反应气压和溅射功率等工艺参数对ZAO薄膜沉积速率的影响规律.结果表明:沉积速率随O2气流量的增加显著降低,靶面溅射模式由金属模式转变为氧化物模式,而且这种转变趋势在改变其他参数时依然明显;沉积速率随溅射功率的增大几乎成线性增加,但随衬底温度的变化并不大;在反应气压增大的情况下,沉积速率不断上升,达到最大值后,又随气压的增大不断下降.     

直流溅射工艺参数对Mo薄膜结构及电性能的影响

采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,对不同溅射功率和溅射工作气压下沉积的薄膜进行X射线衍射、SEM(扫描电子显微镜)、电阻率测试,讨论了工艺参数对沉积Mo薄膜相结构、表面微观形貌、薄膜沉积速率和电学性能的影响。结果表明,随着溅射功率的增加,薄膜的结晶性能变好,沉积速率提高,在沉积功率范围内薄膜均匀致密,表面无空隙,电阻率较低;随着溅射工作气压增加,薄膜结晶性能变差,沉积速率先增加后降低,在沉积工作气压范围内,薄膜致密;随气压降低,电阻率急剧减小。因此,较高的溅射功率和较低的工作气压沉积的Mo薄膜更适合作CIGS薄膜太阳电池的BC层(背接触层)。     

射频溅射工艺参数对AZO薄膜结构和性能的影响

采用射频磁控溅射法制备了掺铝氧化锌(AZO)薄膜,研究了衬底温度及溅射工作压强对沉积薄膜的晶体结构、表面形貌及电学性能的影响。结果显示,随衬底温度增加,薄膜的结晶结构发生显著变化,而溅射工作气压增加主要影响沉积薄膜(103)面与(002)面的相对强度。薄膜的表面形貌受温度影响严重,而气压对形貌的影响相对较小。衬底温度增加,薄膜的电阻率急剧降低,迁移率和载流子浓度都显著增加,而工作气压增加则导致电阻率先减小后增大。     

工艺参数和热处理温度对ZrW_2O_8薄膜制备的影响

采用WO3和ZrO2复合陶瓷靶材,以射频磁控溅射法在石英基片上沉积制备了ZrW2O8薄膜.利用X射线衍射仪(XRD)、表面粗糙轮廓仪和扫描电子显微镜(SEM),研究了不同工艺参数和不同退火温度对ZrW20s薄膜的相组成、沉积速率和表面形貌的影响.采用高温X射线衍射和Powder X软件研究薄膜的负热膨胀特性.实验结果表明随着溅射功率的增加,薄膜沉积速率增加;而随着工作气压的增加,薄膜沉积速率先增加后减小;磁控溅射沉积制备的ZrW20s薄膜为非晶态,表面平滑、致密,随着热处理温度的升高,薄膜开始结晶且膜层颗粒增大;在740℃热处理3 n血后得到膜层颗粒呈短棒状的三方相ZrW2O8薄膜,在1200℃密闭条件下热处理3 min淬火后得到膜层颗粒呈球状的立方相ZrW2O8薄膜,且具有良好的负热膨胀特性.     

气压对射频磁控溅射Bi4Ti3O12薄膜的影响

在不同溅射气压下,采用射频磁控溅射技术在Pt/Ti/SiO2/Si衬底上制备了钛酸铋（Bi4Ti3O12）薄膜。在较低的气压（0.45-0.8Pa）下,得到了单相的Bi4Ti3O12薄膜;在较高气压（1.0-1.8Pa）下,薄膜中出现Bi2Ti2O7焦绿石相;随着气压的增加,薄膜的沉积速率和晶粒尺寸先增大后减小,表面粗糙度也逐渐增加;在适宜的气压（0.6Pa）下,得到的Bi4Ti3O12薄膜物相单一、表面平整致密、结晶良好。     

溅射靶功率对氮化碳薄膜结构的影响

利用双放电腔微波ECR等离子体增强非平衡磁控溅射技术,在Si(100)上制备氮化碳薄膜,并对薄膜进行了拉曼(Raman)、原子力显微镜(AFM)、X射线光电子谱(XPS)等结构的表征.发现溅射靶功率对制膜工艺、薄膜的结构和表面形貌产生很大影响.随着溅射靶功率的增大,薄膜的沉积速率减小,表面粗糙度增大,薄膜结构中的sp2含量增加.     

反应RF磁控溅射法制备氧化铝薄膜及其介电损耗

在氧气和氩气的混合气氛中 ,利用反应射频磁控溅射铝靶制备了非晶氧化铝薄膜 ,其直流介电强度为 3～ 4MV/cm。当固定氩气流量 (压力 ) ,改变氧分压时 ,薄膜沉积速率先减小 ,再增大 ,然后又减小。适当的低工作气压和溅射功率下 ,薄膜的介电损耗可以达到 0 4% ,小于已报道的关于非晶氧化铝薄膜的损耗。从 1 0 0Hz到 5MHz,所有的样品均未显示出可见的极化弛豫引起的损耗峰     

氧脉冲磁控溅射法制备多晶TiO2薄膜

利用一种改进的溅射方法在载波片上制备了多晶TiO2薄膜。由于该法在溅射过程中氧气控制得像脉冲一样,所以称之为氧脉冲直流磁控反应溅射。它能有效的减轻靶中毒,样品沉积速率达到传统反应溅射法的7倍左右。分别利用椭圆偏振测厚仪、X射线衍射仪和场发射扫描电子显微镜研究了沉积时间、氧分压以及氧气开关时间对沉积速率、晶体结构和表面形貌的影响。研究结果显示,在氧分压为30％,断氧时间Toff=30s和20s下制备的样品具有最好的金红石相或锐钛矿相单一晶体结构,并且在Toff=30s时,具有最佳的表面形貌。此外,在较高沉积速率和较低氧分压下,样品更趋向于生成金红石相。利用范德堡法研究了样品的电阻率,在氧分压为30％,Toff=30s和50％,Toff=40s下制备的样品的电阻率为10·cm左右。该样品适合进一步研究透明导电TiO2薄膜。     

Studies on the target conditioning for deposition of LiCoO2 films

Deposition of good quality thin films of Lithium Cobalt Oxide (LiCoO₂), by sputtering is preceded by target conditioning, which dictates the surface composition, morphology and electrochemical performance of the deposited film. Sputtering from a virgin target surface, results in films with excess of the more reactive elements. The concentration of these reactive elements in the films decreases until the system reaches a steady state after sufficient sputtering from the target. This paper discusses the deposition kinetics in terms of target conditioning of LiCoO_2. The composition, morphology and texturing of deposited film during various hours of sputtering were analyzed using X-ray photoelectron spectroscopy (XPS) and Field Emission Scanning electron microscopy (FESEM). The compositional stability is not observed in the films formed during the initial hours of sputtering from the fresh target, which becomes stable after several hours of sputtering. The Li and Co concentration in the films deposited subsequently is found to be varying and possible causes are discussed. After the compositional stability is reached, electrochemical analysis of LiCoO₂ thin films was performed, which shows a discharge capacity of 129 μAh/cm².     

氧分压对Al_2O_3:Ce薄膜的发光性能及表面形貌的影响

应用中频反应磁控溅射设备制备了Al2O3:Ce3+的非晶薄膜。在溅射时靶电压随氧气分压比的增加而减小,而当氧分压比增大时靶电压沿另一条路径变化,即呈现迟滞回线现象。通过控制氧分压比改变Al2O3:Ce3+薄膜的发光性质。经光致发光检测,薄膜的光致发光谱是在374nm附近的非对称波峰,它来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。Ce3+含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。当氧分压比增加时薄膜的发光强度增加,在氧分压比为15%是发光强度最大,其后随氧分压比增大发光强度有减小趋势。薄膜的厚度随氧分压比的增加而呈减小的趋势。X射线衍射(XRD)检测表明所制备透明薄膜为非晶态。扫描电镜检测(SEM)显示,随着氧分压的增加非晶薄膜表面趋于致密平滑。发射纯蓝光的Al2O3:Ce3+非晶薄膜在平板显示等领域有着广泛的潜在应用前景。     

Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) on silicon wafers using an oxygen plasma at pressures between 0.8 and 1.6 mbar and during deposition times between 0.5 and 3.0 h. Hydrogen was found to be the main impurity and its concentration increased with deposition pressure. The composition was always slightly oxygen-rich, which is attributed to the oxygen plasma. Additionally, an interfacial silicon oxide thin layer was detected and taken into account. The thickness of the hafnium oxide film was found to increase linearly with deposition time and to decrease exponentially with deposition pressure, whereas the thickness of the silicon oxide interfacial layer has a minimum as a function of pressure at around 1.2 mbar and increases slightly as a function of time. The measurements confirmed that this interfacial layer is formed mainly during the early stages of the deposition process.     

Effects of nitrogen partial pressure on microstructure,morphology and N/Ti ratio of TiN films deposited by reactive magnetron sputtering

Abstract

TiN films were deposited on Si(111) substrates at different nitrogen partial pressures with reactive magnetron sputtering. The crystal structure and preferred growth orientation of the films were determined using X-ray diffraction (XRD) analysis. Their morphology and composition were analysed using field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS). It is found that with the increase in nitrogen partial pressure, the growth of TiN films varies from the {111} preferred orientation to the {100} preferred orientation and the deposition rate of TiN films decreases. When the {111} preferred orientation is presented, TiN films reveal a kind of surface morphology of triangular pyramid with right angles; while the {100} orientation is dominant, TiN films characterise another kind of domelike surface morphology. Furthermore, the N/Ti ratio of the TiN films first increases, then decreases and increases again as nitrogen partial pressure enlarges.     

SnOx Thin Films Deposited by Reactive Magnetron Sputtering for Microbatteries Anodes

SnOx thin films, with various oxygen deficiencies, are deposited from a Sn target on to silicon substratesby reactive magnetron sputtering. The SnOx films are characterized by X-ray diffraction ( XRD ) and X-ray photoelectron spectroscopy(XPS). Influences of deposition conditions such as oxygen partial pressure and annealing temperature on the characteristicsof the films are discussed in detail. The high reversible capacity and cycle performance characteristics of SnOxare also described. The results show that stoichiometric parameter x increases with the increase in oxygen partial pressure. The chargedischarge performance of the SnOxfilms is found to be dependent on x value.     

直流磁控反应溅射制备IrO2薄膜

为研究氧化依（ＩｒＯ_２）对ＰＺＴ铁电薄膜疲劳性能的影响,利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ_２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ_２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ_２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．     

Large area ZnO:Al films with tailored light scattering properties for photovoltaic applications

Aluminum-doped zinc oxide films on glass are promising substrates for use in thin film solar cells based on amorphous and amorphous/microcrystalline silicon absorber material. The films can be produced by magnetron sputtering on large scale at relative low cost. Especially reactive sputtering of metallic Zn/Al compound targets is a cheap way to produce films at high deposition rate. One drawback of amorphous silicon is the low absorption in the near infrared spectral range. Wet chemical etching has been used to produce a rough TCO surface that enables light trapping in the absorber. The etching behaviour of ZnO:Al films can be tuned by changing oxygen partial pressure during deposition. The etching behaviour is compared to ZnO structure and discussed regarding the performance of solar cells deposited onto the etched films.     

Deposition of nickel oxide by direct current reactive sputtering: Effect of oxygen partial pressure

Nickel oxide thin films were deposited by Direct Current magnetron reactive sputtering from Ni target onto SnO₂:F conductive glass substrates. The process was carried out without intentional heating, in an argon/oxygen gas mixture with various oxygen contents and discharge currents. The polycrystalline NiO thin films were deposited with controlled growth of the structure along [111] and [200] crystallographic directions for chosen conditions. Morphology of as-deposited films was found to depend on the preferentially oriented NiO crystals. Moreover, on the basis of discharge voltage as a function of the O₂ partial pressure for a constant discharge current, we present here the method to estimate the deposition conditions allowing us to achieve the desired preferential growth of transparent p-type semiconductor NiO, by Direct Current magnetron reactive sputtering.