基于LTCC技术的三维集成微波组件

低温共烧陶瓷(LTCC)技术和三维立体组装技术是实现微波组件小型化、轻量化、高性能和高可靠的有效手段.本文研究实现了基于LTCC技术的三维集成微波组件,对三维集成微波组件的立体互连结构、三维集成LTCC微波电路的垂直微波互连、微波多芯片模块(MMCM)的垂直微波互连等关键技术进行了重点阐述.研制出的三维集成微波组件的体积和重量分别比传统的二维平面LTCC集成微波组件减小40%和38%,电气性能相当.     

基于MCM-C工艺的3D-MCM实用化技术研究

基于MCM-C(陶瓷厚膜型)工艺,实现了三维多芯片组件(3D-MCM)封装。解决了多层基板制作、叠层间隔离及垂直定位互连等关键工艺问题。制作出层间为金属引线互连结构的3D-MCM样品。该样品具有体积小、重量轻、可靠性高等优点。经使用测试,样品的技术指标完全合格,使用情况良好。     

TCLL多层微波互连基板布局布线设计及制造技术

采用低温共烧陶瓷(LTCC)技术制造多层微波互连基板,可以研制出高密度的T/R组件.讨论了多层基板中微带线和带状线的结构及其优化设计技术,介绍了制造工艺流程和关键工艺难点.     

基于埋置式基板的3D-MCM封装结构的研制

研制一种用于无线传感网的多芯片组件(3D-MCM).采用层压、开槽等工艺获得埋置式高密度多层有机(FR-4)基板,通过板上芯片(COB)、板上倒装芯片(FCOB)、球栅阵列(BGA)等技术,并通过引线键合、倒装焊等多种互连方式将不同类型的半导体芯片三维封装于一种由叠层模块所形成的立体封装结构中;通过封装表层的植球工艺形成与表面组装技术(SMT)兼容的BGA器件输出端子;利用不同熔点焊球实现了工艺兼容的封装体内各级BGA的垂直互连,形成r融合多种互连方式3D-MCM封装结构.埋置式基板的应用解决了BGA与引线键合芯片同面组装情况下芯片封装面高出焊球高度的关键问题.对封装结构的散热特性进行了数值模拟和测试,结果表明组件具有高的热机械可靠性.电学测试结果表明组件实现了电功能,从而满足了无线传感网小型化、高可靠性和低成本的设计要求.     

三维MCM-C／A组件技术研究

本文研究了采用LTCC多层布线与铝阳极氧化多层布线工艺相结合的方法制作出三维高密度MCM组件（3D—MCM—C／A）。阐述了3D—MCM—C／A组件的结构,研究分析了LTCC基板与铝阳极氧化工艺之间的兼容性问题。通过LTCC工艺和LTCC基板抛光清洗工艺的控制以及过渡Ta层的设计解决了两者之间的兼容问题;采用LTCC隔板的方式实现组件的垂直互连。在LTCC基板表面采用薄膜淀积的方法以及特殊的“双刻蚀法”制作焊接区,满足了表面器件及垂直互连的焊接,实现了四层2D—MCM—C／A垂直互连。。     

基于硅基堆叠SIP技术的超宽带T/R组件

传统的超宽带T/R组件采用的是两维砖块式结构,体积和重量已不适应目前小型化、低剖面、易共形的相控阵天线要求。文中提出的基于硅基堆叠系统级封装(SIP)技术,将四通道的射频芯片高度集成在硅基介质基板上,将多层介质基板厚金压合,实现多层堆叠的三维封装。通过采用芯片多功能集成技术和超宽带射频信号的垂直互连技术,设计出三维堆叠的四通道超宽带T/R组件。T/R组件带宽为6 GHz～18 GHz,单通道的发射功率优于23 dBm,接收增益优于20 dB,可实现6位数控衰减及6位数控移相,尺寸仅有13.0 mm×13.0 mm×3.4 mm。该技术可以实现多通道超宽带T/R组件的SIP封装,有利于工程应用。     

基于埋置式基板的3D-MCM封装结构的研制

研制一种用于无线传感网的多芯片组件（3D-MCM) . 采用层压、开槽等工艺获得埋置式高密度多层有机（FR-4）基板,通过板上芯片（COB) 、板上倒装芯片（FCOB) 、球栅阵列（BGA）等技术,并通过引线键合、倒装焊等多种互连方式将不同类型的半导体芯片三维封装于一种由叠层模块所形成的立体封装结构中;通过封装表层的植球工艺形成与表面组装技术（SMT）兼容的BGA器件输出端子;利用不同熔点焊球实现了工艺兼容的封装体内各级BGA的垂直互连,形成了融合多种互连方式3D-MCM封装结构. 埋置式基板的应用解决了BGA与引线键合芯片同面组装情况下芯片封装面高出焊球高度的关键问题. 对封装结构的散热特性进行了数值模拟和测试,结果表明组件具有高的热机械可靠性. 电学测试结果表明组件实现了电功能,从而满足了无线传感网小型化、高可靠性和低成本的设计要求.     

基于钙硼硅系LTCC生瓷带微波基板制造技术北大核心CSCD

低温共烧陶瓷(LTCC)技术可以实现真正意义上的三维微波互连基板,已经成为实现机载、星载、舰载相控阵雷达收/发组件小型化、轻量化、高性能、高可靠和低成本的理想方法之一。文中对基于国产钙硼硅系LTCC生瓷带微波基板制造技术进行了深入研究,剖析了影响基板外形尺寸和腔体翘曲度的工艺因素,提出了相应的解决方法。     

应用于MCM-C/D的减薄抛光工艺

混合型多芯片组件(MCM-C/D)研制技术具有共烧陶瓷技术高密度多层互连集成和薄膜电路高精度和高可靠性等优点,是目前先进实用的混合集成技术.共烧多层基板的总厚度差(TTV)和表面粗糙度是影响共烧多层基板在多芯片组件(MCM)中应用的关键因素.选取低温共烧陶瓷基板,研究了减薄抛光工艺对基板的作用机理,结合实际加工要求选择...     

半导体器件

介绍了微波器件 MPT(微电子组装)技术的发展过程和芯片互连技术、多层基板技术、三维垂直互连技术和管壳及散热技术等主要关键技术。     

卷对卷制备柔性硅基薄膜电池集成串联组件的研究

卷对卷制备出聚酰亚胺(PI)衬底柔性 硅(Si)基薄膜太阳电池集成串联组件。对卷对卷制备柔性Si基薄膜电池集成串联的优势 进行了分析,讨论了制约柔性薄膜电 池集成串联组件的主要因素;设计了两种柔性薄膜电池集成串联组件结构;进行了柔性 薄膜电池集成串联组件研制,并进行了对比分析。采用卷对卷工艺制备了非晶硅(a-Si)电 池,采用 卷对卷激光刻划、卷对卷丝网印刷与卷对卷精密点胶实现集成串联,形成柔性薄膜电池集成 串联组件,柔性a-Si单结集成串联组件全面积转换效率达到5.96％(AM1.5,全面积为117.3 cm²)。     

Transition of MCM-C applications to MCM-L using rigid flex substrates

Rigid flex circuits have historically been used in military and high-end performance electronic packaging to improve reliability, reduce weight and save space. This type of interconnect offers higher reliability and a tighter form factor when compared to more conventional interconnect techniques. Improvements in printed circuit fabrication processes and laminate materials have made possible unique opportunities for high density rigid flex circuitry. Recently MCM-L or laminate based multi chip modules have been gaining in popularity as a lower cost packaging alternative to traditional MCM-C or ceramic substrate based multi chip modules. This paper describes the steps taken to redesign existing modules from MCM-C technology to MCM-L(F). Several actual products that have been redesigned from ceramic substrate technology to laminate based packaging using rigid flex as the enabling technology are shown. Data is presented on thermal dissipation, mechanical reliability, electrical performance, and thermal reliability of the laminate substrate as well as assembly information.     

一种基于SiP技术的加速度计有源磁悬浮控制电路

加速度计是以加速度的观点来测量物体运动的传感器,它通过检测质量块的惯性力来测量载体的线加速度或角加速度。文中介绍的有源磁悬浮控制电路与陀螺浮子构成磁悬浮摆式积分陀螺加速度计,该加速度计具有量程大、测量精度高等优点。受整机系统内部装配空间的限制,在电路集成化产品的设计中,采用系统集成封装(SiP)技术设计与制作有源磁悬浮控制电路,减小电路产品的底面积和高度,适应整机系统对产品的装配和使用要求。同时详细介绍了基于SiP技术的电路设计方法,对HTCC工艺的SiP结构设计进行了阐述,并简述了HTCC工艺的SiP产品达到的技术性能和应用情况。     

微波组件用带腔体LTCC基板制造技术

机载、星载、舰载相控阵雷达由于其特定的使用环境，需要体积小、重量轻、高性能、高可靠、低成本的微波组件，带腔体LTCC基板具有高密度布线、电阻、电容、电感的内埋以及芯片的埋置等特性，是制作机载、星载、舰载相控阵雷警警波组件的理想的高密度基板。该文介绍了带腔体LTCC集成基板的制造技术，并对微带线、带状线、内埋电阻、腔体等关键技术进行了分析，提出了相应的解决方法。     

Boundary element analysis of thermal fatigue effects on high power IGBT modules

The technology of high power IGBT modules has been significantly improved these last years against thermal fatigue. The most frequently observed failure modes, due to thermal fatigue, are the solder cracks between the copper base plate and the direct copper bonding (DCB) substrate and bond wire lift-off. Specific simulation tools are needed to carry out reliability researches and to develop device lifetime models. In other respects, accurate temperature and flux distributions are essential when computing thermo-mechanical stresses in order to assess the lifetime of high power modules in real operating conditions. This study presents an analysis method based on the boundary element method (BEM) to investigate thermal behavior of high power semiconductor packages subjected to power cycling loads. The paper describes the boundary integral equation which has been solved using the BEM and applied to the case of a high power IGBT module package (3.3 kV–1.2 kA). A validation of the numerical tool is presented by comparison with experimental measurements. Finally, the paper points out the effect on the thermal stress of the IGBT chips position on the DCB substrate. In particular, a light shifting of the silicon chips may be sufficient to delay significantly the initiation and the propagation of the cracks, allowing a higher device lifetime of the studied module.     

一种X波段高功率多通道发射系统设计

在有源相控阵雷达为应用背景下,文中设计了一种以X波段发射组件为核心的发射系统,每个发射组件为发射系统的一个通道。发射组件是基于MMIC和MCM技术实现。该子阵输出功率＞80 W,通道间幅度一致性＜0.5 dB,具有连续波工作、体积小、发射功率大、可靠性高和一致性好等优点。     

基于Homeplug BPL技术的EoC系统设计

设计了一种基于Homeplug BPL技术利用同轴电缆实现HFC网双向接入的EoC系统。介绍了整个EoC系统的设计思路,给出了软硬件各模块的结构和设计。该系统以SPC200e为核心,利用时分多址技术,支持多用户接入,能够为有线电视的增值业务提供高带宽和稳定的双向接入通道。     

Design, optimization, and fabrication of side-illuminated p-i-nphotodetectors with high responsivity and high alignment tolerance for1.3and 1.55-μm wavelength use

We describe the design, optimization and fabrication of side-illuminated p-i-n photodetectors, grown on InP substrate, suitable for surface hybrid integration in low-cost modules. The targeted functionalities of these photodetectors were a very high responsivity at 1.3- and 1.55-μm wavelengths and quasi-independent on the optical polarization, and had a high alignment tolerance. Moreover, in order to avoid any reliability problem, the principle of evanescent coupling was adopted. Two photodetectors were optimized, fabricated, and tested; the first was for classical cleaved fiber, and the second was for lensed fiber. Because the considered epitaxial structures were complicated to optimize, the method of the genetic algorithm was used, associated with a beam propagation method (BPM). The photodetectors are based on multimode diluted waveguides, which are promising structures in the field of optoelectronics and integrated optics. Starting from the presented comparisons between experimental and theoretical results, the interest of the design method is discussed and the complete performances of newly fabricated devices are presented. The aspect of the cutoff frequency is also considered     

Ex‐ante environmental and economic evaluation of polymer photovoltaics

The use of polymer materials for photovoltaic applications is expected to have several advantages over current crystalline silicon technology. In this paper, we perform an environmental and economic assessment of polymer‐based thin film modules with a glass substrate and modules with a flexible substrate and we compare our results with literature data for multicrystalline (mc‐) silicon photovoltaics and other types of PV. The functional unit of this study is ‘25 years of electricity production by PV systems with a power of 1 watt‐peak (W_p)’. Because the lifetime of polymer photovoltaics is at present much lower than of mc‐silicon photovoltaics, we first compared the PV cells per watt‐peak and next determined the minimum required lifetime of polymer PV to arrive at the same environmental impacts as mc‐silicon PV. We found that per watt‐peak of output power, the environmental impacts compared to mc‐silicon are 20–60% lower for polymer PV systems with glass substrate and 80–95% lower for polymer PV with PET as substrate (flexible modules). Also in comparison with thin film CuInSe and thin film silicon, the impacts of polymer modules, per watt‐peak, appeared to be lower. The costs per watt‐peak of polymer PV modules with glass substrate are approximately 20% higher compared to mc‐silicon photovoltaics. However, taking into account uncertainties, this might be an overestimation. For flexible modules, no cost data were available. If the efficiency and lifetime of polymer PV modules increases, both glass‐based and flexible polymer PV could become an environment friendly and cheap alternative to mc‐silicon PV. Copyright © 2009 John Wiley & Sons, Ltd.