化学气相沉积包覆燃料颗粒ZrC涂层的模拟计算

ZrC涂层是高温气冷堆包覆燃料颗粒最具潜力的一种阻挡层材料。本文利用热力学软件HSC-Chemistry5.0对化学气相沉积ZrC涂层进行模拟计算。结果表明,化学气相沉积ZrC涂层较佳工艺参数范围如下：原料气体中C/Zr比为0.5～1.5,H₂/Ar比为0.5～1.5,沉积温度为1450～1650℃。     

ZrCl4蒸汽沉积法制备高温气冷堆包覆燃料颗粒ZrC涂层

采用ZrCl₄蒸汽、H₂和C₃H₆作为化学反应体系,以Ar为载气,在流化床沉积炉中制备高温气冷堆包覆燃料颗粒ZrC涂层。对所制备涂层进行了分析表征,结果显示：ZrC涂层剖面均匀光滑,无明显孔洞;与内致密热解炭层的界面清晰,厚度约为35μm;涂层主要成分为Zr和C,Zr/C摩尔比接近化学计量比1∶1,其主要相组成为面心立方的ZrC;晶粒生长无明显的择优取向。     

核燃料颗粒化学气相沉积包覆铌层的热力学分析

燃料颗粒表面涂覆Nb层采用的是流态化化学气相沉积(CVD)技术。采用HSC Chemistry 6.0软件,对该工艺过程进行热力学模拟计算,分析各工艺参数对反应产物的影响。结果表明:提高沉积温度,有利于金属Nb的生成,并减少副产物的含量;随着氢气与NbCl5的摩尔比的增加,反应所得产物中的Nb含量也随之增加;Ar气也可以一定程度上影响平衡反应产物的组成,一定量的Ar气有助于金属Nb的生成,减少副产物。     

Al2O3化学气相沉积工艺研究

采用ＡｌＣｌ３Ｈ２ＣＯ２化学气相沉积（ＣＶＤ）系统，在不同ＣＶＤ工艺条件下，氧化铝被沉积在预涂层ＴｉＣ的３１６ＬＳＳ、石墨和钼基体上。氧化铝涂层经ＳＥＭＸｒａｙ和电子能谱分析表明：该涂层为正化学计量致密Ａｌ２Ｏ３。工艺研究表明：温度升高使Ａｌ２Ｏ３沉积速率迅速增加；ＡｌＣｌ３浓度达２％左右，沉积速率增加缓慢；ＣＯ２浓度小于１０％时，沉积速率迅速下降。     

多晶硅薄膜等离子体增强化学气相沉积低温制备工艺

采用电子回旋共振等离子增强化学气相沉积(ECR-PECvD)方法,以SiH4和H2为气源,在普通玻璃衬底上沉积多晶硅薄膜.利用XRD、Raman光谱和TEM研究了衬底温度、氢气流量和微波功率对多晶硅薄膜结构的影响.结果表明,制得的多晶硅薄膜多以(220)取向择优生长,少数条件下会呈现(111)择优取向.当衬底温度为300℃、H2流速为25 mL/min、微波功率为600 W时,多晶硅薄膜结晶状态最好,且呈最佳的(220)取向.     

强脉冲电子束在聚酯薄膜表面产生的化学气相沉积

一、引言 高功率密度脉冲电子束(>10~9W/cm~2)轰击金属,将引起金属剧烈蒸发,产生高温等离子体。等离子体中的金属离子获得一定能量后将与本底气体分子相互作用而形成化合物。本文介绍在低压氮气环境中,利用强脉冲电子束轰击铜靶,产生了氮铜化合物沉积在聚酯薄膜表面的实验结果。并用ESCA分析束处理过的聚酯薄膜表面的化学组成的变化。     

铀上激光辅助化学气相沉积镍薄膜研究

为防止金属铀的腐蚀,本文采用激光辅助化学气相沉积(LACVD)方法在铀上制备了镍薄膜。采用SEM、XRD分析了薄膜的形貌、物相以及界面特性,采用黏胶拉伸测试表征了膜-基结合性能,采用电化学极化法分析了薄膜的抗腐蚀性能。结果表明:压力和温度对化学气相沉积(CVD)方法制备镍薄膜的质量有较大的影响。随着基底温度和沉积气压的降低,薄膜变得致密、平整,质量提高。在优化的工艺条件165℃、3Pa下,CVD方法所得镍薄膜非常致密。采用LACVD方法时,激光能量为200mJ时所制得的薄膜致密,300mJ时膜变得粗糙。无激光辅助时,CVD方法所制得的薄膜较易剥落,激光辅助下所得薄膜的膜-基结合力较好。LACVD方法大幅提高了薄膜的抗腐蚀性能,抗腐蚀性能的提高主要源于激光辅助使薄膜致密化,提高了薄膜与基底的结合力。     

化学气相沉积钨单晶管材表面{110}晶面构成分析

通过电解蚀刻和电子衍射分析了具有轴向[111]晶向的管状钼单晶基体化学气相沉积(CVD)钨单晶涂层的{110}晶面的构成。实验发现,当W单晶涂层的轴向具有[111]晶体取向时,通过电解蚀刻,在钨单晶涂层的表面可以获得高份额的{110}晶面。蚀刻出来的{110}晶面呈台阶结构,并同[111]     

EACVD沉积金刚石过程中气相化学研究

利用热阴极直流等离子体化学气相沉积技术分别在ＣＨ４－Ｈ２和Ｃ２Ｈ５ＯＨ－Ｈ２两种不同的工作环境中沉积金刚石膜,同时利用发射光谱对等离子体气相环境进行了原位诊断。在ＣＨ４－Ｈ２和Ｃ２Ｈ５ＯＨ－Ｈ２两种体系中,探测到Ｈ原子和ＣＨ、ＣＨ＾＋、Ｃ２等多种碳氢粒子,发现ＣＨ和ＣＨ＾＋有益于金刚石生长,而Ｃ２是非金刚石相的生长基团。与ＣＨ４－Ｈ２体系所不同的是,在Ｃ２Ｈ５ＯＨ－Ｈ２体系中,还产生了ＣＨＯ、ＣＨ     

铀在特定场址地下水中存在和迁移形态研究及其沉积热力学分析

将化学热力学平衡分析模式与地球化学条件相结合,应用铀元素水文地球化学迁移形式热力学分析方法,计算出某特定场址地下水中铀的化学形态和迁移形态。结果表明：UO2(CO3)2^2-占84．1％,UO2(CO3)^0占8．7％,UO2(CO2)3^-占6．5％。     

Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film

An investigation was made into the nitrogen-trimethylgallium mixed electron cyclotron resonance （ECR） plasma by optical emission spectroscopy （OES）. The ECR plasma enhanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on an α-Al2O3 substrate. X-ray diffraction （XRD） analyses showed that the peak of GaN （0002） was at 20 = 34.48°, being sharper and more intense with the increase in the Ne： trimethylgallium（TMG） flow ratio. The results demonstrate that the electron cyclotron resonance-plasma enchanced met- alorganic chemical vapor deposition （ECR-MOPECVD） technology is evidently advantageous for the deposition of GaN film at a low growth temperature.     

Monte Carlo Simulation of Electron Velocity Distribution and Gas Phase Process in Electron-Assisted Chemical Vapor Deposition

The gas phase process of diamond film deposition from CH4/H2 gas mixture by electron-assisted chemical vapor deposition is simulated by the Monte-Carlo method. The electron velocity distribution under different E/P (the ratio of the electric field to gas pressure) is obtained, and the velocity profile is asymmetric. The variation of the number density of CH3 and H with different CH4 concentrations and gas pressure is investigated, and the optimal experimental parameters are obtained: the gas pressure is in the range of 2.5 kPa ~ 15 kPa and the CH4 concentration is in the range of 0.5% ~ 1%. The energy carried by the fragment CH3 as the function of the experiment parameters is investigated to explain the diamond growth at low temperature. These results will be helpful to the selection of optimum experimental conditions for high quality diamond films deposition in EACVD and the modeling of plasma chemical vapor deposition.     

The Gas Nucleation Process Study of Anatase TiO2 in Atmospheric Non-Thermal Plasma EnhancedChemical Vapor Deposition简

Abstract The gas phase nucleation process of anatase TiO2 in atmospheric non-thermal plasma enhanced chemical vapor deposition is studied. The particles synthesized in the plasma gas phase at different power density were collected outside of the reactor. The structure of the collected particles has been investigated by field scanning electron microscope （FESEM）, X-ray diffraction （XRD）, high resolution transmission electron microscopy （HRTEM） and selected area electron diffraction （SAED）. The analysis shows that uniform crystalline nuclei with average size of several nanometers have been formed in the scale of micro second through this reactive atmo- spheric plasma gas process. The crystallinity of the nanoparticles increases with power density. The high density of crystalline nanonuclei in the plasma gas phase and the low gas temperature are beneficial to the fast deposition of the 3D porous anatase TiO2 film.     

Growth of Aligned Carbon Nanotubes through Microwave Plasma Chemical Vapor Deposition

Aligned carbon nanotubes (CNTs) were synthesized on glass by microwave plasma chemical vapor deposition (MWPCVD) with a mixture of methane and hydrogen gases at the low temperature of 550~C. The experimental results show that both the self-bias potential and the density of the catalyst particles are responsible for the alignment of CNTs. When the catalyst particle density is high enough, strong interactions among the CNTs can inhibit CNTs from growing randomly and result in parallel alignment.     

Formation of SiC Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

Growth of SiC nanowires in plasma-assisted hot filament chemical-vapor-deposition by using hexamethyldisiloxane (HMDSO) as the gas source is reported. The SiC nanowires (SiCNWs) grew on Au-coated silicon substrate with Core-Shell structure, where the cores consisted of polycrystalline SiC grains and the shell exhibited amorphous structure. The featured structures such as cones, polyhedrons, ball-liked particles were observed in the case without plasma assistance. The underlying mechanism for the growth of nanostructures was also discussed. The high chemical activity induced by the plasma process plays an important role in using monomer to generate nanostructure.     

Synthesis of Diamond-Like Carbon Films Using Hot Filament-Aided Microwave Plasma Chemical Vapor Deposition

1. IntroductionDiamond-like carbon (DLC) films have receivedconsiderable attention recently because their inher-ent properties such aJs hardness, thermal conductiv-ity and electrical resistance are excellent and closeto those of a diamond. The DLC films have beenprepared by a variety of methods, for instance, radiofrequency (RF) plasma deposition [l], ion beam de-position [2] and electron cyclotron resonance (ECR)chemical vapor deposition [3]. As sllrface wave dis-charges [4] have advanta…