离子注入硅的连续CO2激光退火

激光退火用在半导体材料上，现在国内外都还在试验阶段，所用的激光器主要是红宝石激光器、钕玻璃激光器和氩离子激光器。     

激光退火产生磁泡

美国IBM公司watson研究中心的Hodgson小组，利用激光退火工艺，在掺镓钇铁榴石薄膜中产生了磁泡。当其受到外加磁场作用时，在中央退火区的每条暗线便缩小形成直径约为3微米的磁畴。激光退火产生的磁泡，比起其他方法产生的磁泡要更小、更稳定。     

半导体集成电路制造中的准分子激光退火研究进展EI北大核心CSCD

随着半导体集成电路芯片的尺寸越来越小、结构越来越复杂,芯片制造过程中的退火工艺技术也在不断进步。激光退火以其在芯片制造过程中热预算控制的优势,在芯片制造退火工艺中的重要性正在显现。而准分子激光的特点是波长短、峰值功率高、作用于大多数物质表面时能量迅速被物质表面吸收。准分子激光退火可以实现对材料表面温度梯度的控制,是半导体集成电路制造中热处理工艺的重要选择。对半导体集成电路制造过程中准分子激光退火研究进展进行了综述。概述了集成电路制造中退火工艺热预算控制与激光退火的理论模拟研究结果;着重介绍了准分子激光退火在离子掺杂控制、超浅节形成、沟道外延等材料处理中的研究进展,以及在金属层制备和3D器件中的应用。研究表明,准分子激光退火工艺有望为三维半导体集成电路制造提供新的解决方案。     

离子注入在Ⅲ—Ⅴ族化合物半导体中的应用

介绍了离子注入Ⅲ－Ⅴ族化合物半导体特点,论述了离子注入Ⅲ－Ⅴ族化合物半导体获得ｎ、ｐ型衣深补偿能菜的研究现状,讨论了离子注入Ⅲ－Ⅴ族化合物后的退火及其保护问题。     

Nd^3＋：YAG连续激光束用于半导体连续激光退火的研究

本文主要介绍如何根据连续激光退火的需要，将Nd^3＋：YAG激光划片机改进和完善成专用连续激光退火设备。简单介绍利用此设备进行激光退火的实验结果。提出研制和生产专用连续激光退火设备的必要性。     

离子注入半导体的激光退火

叙述了用高功率激光辐射退火的离子注入硅的物理和电学性能。重点放在用激光退火和用常规热退火可以得到的材料性能的对比上。讨论了这些技术在高效率太阳电池制作上的应用，以及这种新技术在其它材料领域的可能应用。     

Pulsed laser annealing of single-crystal and ion-implanted semiconductors

The dynamic characteristics of both single-crystal and ion-implanted semiconductor layers annealed by a pulsed high-power laser beam is examined analytically for the first time by means of a parametrized perturbation method. The laser-induced lattice temperature rise is explicitly related to the laser beam parameters as well as the semiconductor properties. Specifically, the temperature in the annealed semiconductor is characterized in terms of the ambipolar diffusion length of hot, excess charge carriers, the optical attenuation coefficient of the medium, and the operating laser power, and the threshold pulse energy for surface melting is calculated for the case of silicon devices. It is shown that the pulse energy required for the onset of surface melting is sensitively dependent on the optical absorption coefficient, decreases significantly with increasing pulse intensity, and increases remarkably with increasing diffusion length of excess charge carriers.     

Electron-beam annealing of ion-implanted silicon

A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure.     

Encapsulant-free annealing of ion-implanted GaP

GaP diodes were fabricated by Mg+ implantation and controlled atmosphere annealing. At room temperature, these diodes emit green light under forward bias, with an ideality factor of 2.0. Reverse breakdown voltages are 180 V, with a measured reverse leakage current density of 4.8 × 10?9 A/cm2 at a bias of ?3 V. The diodes retain good electrical characteristics at 400°C.     

Transient capless annealing of ion-implanted GaAs

A method for high-temperature capless activation of implanted gallium arsenide has been developed that uses high-purity semi-insulating PBN LEC gallium arsenide [1] both as implant host and stabilizing medium. This capless technology, "transient capless annealing," has shown high activation of implanted dose (85 percent) with high uniformity (± 4.5 percent) and abrupt (500 Å/decade) carrier concentration depth profiles at 1.5 × 10¹⁷cm^-3doping. Hall measurements taken from activated films show an electron mobility of 4500 cm²/V . s at room temperature. S-band integrated circuits fabricated by transient capless annealing of discretely implanted²⁹Si⁺delivered 20 dB of gain and 29 dB . m of output power between 3.0 and 3.6 GHz. The high-throughput batch-processing nature of transient capless annealing makes this process commercially attractive for high-yield integrated-circuit production in gallium arsenide.     

Scanning-electron-beam annealing of ion-implanted p-n junction diodes

Scanning-electron-beam annealing of ion-implanted silicon p+-n junctions over a range of beam power and exposure conditions is described. Electrical measurements have shown that electron-beam annealing can produce diode characteristics close to those of similar thermally annealed structures.     

Pill-box capless thermal-heat-pulse annealing of ion-implanted GaAs

A capless annealing method for GaAs, employing short (1-10-s) thermal heat pulses from a graphite strip heater, is described. Results with²⁹Si+ implanted into semi-insulating chromium-doped HB and chromium-doped LEC GaAs are presented. The samples were annealed at temperatures as high as 1000°C in a stationary N2atmosphere with the implanted surface in close contact with a flat graphite strip heater surface. The wafers were covered with a graphite lid, effectively confining the volatile arsenic to a very small volume around the sample and providing a uniform temperature environment. Implantation efficiencies were high, and the quality of the implanted surface remained excellent after annealing.     

Activation of silicon ion-implanted gallium nitride by furnace annealing

Ion implantation into III–V nitride materials is animportant technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (n_atoms=5×10¹⁴ cm⁻²) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150°C in N₂ for 5 min exhibited a smooth surface morphology and a sheet electron concentration n_s ∼9.0×10¹³ cm⁻², corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurem entsindicate a Si donor ionization energy ∼15 meV.     

Flash-lamp annealing of ion-implanted silicon and its application to solar cells

Xe-lamps were used to anneal p+-implanted silicon. The redistribution of implanted dopants does not occur by flash annealing. The substrate-orientation dependence of electrical activity of implanted dopants between     

Low temperature annealing of ion-implanted KNbO3 channelwaveguides

Ion implanted KNbO₃ channel waveguides were annealed at 150°C for several hours. The waveguide losses were considerably reduced at visible and near-infrared wavelengths showing a minimum loss coefficient of 1.7 dB cm^-1 at 633 nm. No significant change of the refractive index profile was observed