一种低相位噪声的毫米波压控振荡器

基于推推振荡器结构设计了一种低相位噪声的毫米波压控振荡器,相比传统采用直接振荡和倍频实现的振荡器,该振荡器具有体积小、相位噪声低及电路简单等优点.振荡器中的谐振电路采用多级串联谐振,电感采用微带线的形式,提高了谐振器的品质因数,进而降低了振荡器的相位噪声,且在谐振电路通过微带耦合方式实现了基频输出.基于GaAs异质结双极晶体管(HBT)工艺对振荡器进行了设计和流片,芯片尺寸为1.8 mm×1.4 mm.在5V工作电压和0～13 V调谐电压条件下,振荡器的输出频率为42.1～46.2 GHz,电流为120 mA,输出功率为1 dBm,1/2次谐波抑制大于15 dB,相位噪声为-60 dBc/Hz@10 kHz、-85 dBc/Hz@100 kHz和-105 dBc/Hz@1 MHz.     

99IEEEMTT-S国际会议中有关振荡器、倍频器、分频器以及变频器的报道

据99IEEEMTT-S国际微波会议报道,有关振荡器的论文共有10篇,其中5篇为毫米波频率,5篇为微波频率。主要内容为:采用SiGeHBT(fT=70GHz,fmax=95GHz)的47GHz振荡器,输出功率为13.1dBm,相位噪声为-99.3dBc/Hz@100kHz;采用倒装工艺的GunnDiode60GHz振荡器,输出功率为15.4dBm,相位噪声为-87.67dBc/Hz@100kHz;采用PHEMT(fT=100GHz,fmax>200GHz)的77GHz振荡器,可变频率范围达到2GHz;此外还发表了邻近寄生干扰在50dBc以下的20GHz分谐波(Subharmonic)注入同步振荡器;使用MESFET的C波段高功率附加效率振荡器(43%@Vd=1.9V,36%@Vd…     

锁相介质振荡器

锁相介质振荡器采用锁相稳频技术将介质振荡器的频率稳定在参考频率上。研制的一种X波段锁相介质振荡器,得到的性能指标如下：频率8.44GHz;相位噪声≤-80dBc/Hz@10kHz、≤-110dB/Hz@100kHz;输出功率≥10dBm;杂波≤-75dBc、谐波≤-30dBc。     

基于HBAR的X波段低相噪频率合成方法

基于高次谐波体声波谐振器(HBAR)的高Q值梳谱信号产生的特性提出了一种低相位噪声频率合成方法。该文根据HBAR的工作原理,采用HBAR与声表滤波器级联的方法共同构成低噪声振荡环路直接产生S波段信号,然后通过四倍频模块输出X波段频率信号。采用HBAR与声表滤波器串联的方式提高了带外频响抑制,输出的2.2GHz信号的相位噪声达-118.9dBc/Hz@1kHz,四倍频后得到的X波段信号8.8GHz的相噪达到-107.4dBc/Hz@1kHz。     

低相噪锁相介质振荡器研究

针对高的相位噪声指标要求,对取样锁相介质振荡器进行了研究.通过相位噪声分析,明晰了采用介质振荡器与取样锁相技术降低相位噪声的机理,并分别对介质振荡器与锁相环路进行了设计.设计中,应用HFSS与ADS对介质振荡器进行了联合仿真,体现了计算机辅助设计的优势.最终研制出17 GHz锁相介质振荡器,测试结果为:输出功率13.1 dBm;杂波抑制>70 dB;谐波抑制>25 dB; 相位噪声为-105 dBc/Hz@1 kHz,-106 dBc/Hz@10 kHz,-111 dBc/Hz@100 kHz,-129 dBc/Hz@1 MHz.     

Ku波段低相噪锁相介质振荡器

应用取样锁相技术对Ku波段低相噪锁相介质振荡器进行了研究,对取样锁相技术的工作原理和电路特性进行了分析,阐述了取样锁相环路的设计过程.对制成的实物进行了测试和调试,取得了预期的相位噪声指标.实验结果表明,该取样锁相源的频率为17GHz,输出功率≥10dBm,杂波抑制比≥70dBc,相位噪声-103dBc/Hz@1kHz, -107dBc/Hz@10kHz, -110dBc/Hz@100kHz, -128dBc/Hz@1MHz.     

C波段介质振荡器的研究与设计

利用负阻原理设计了5.9 GHz介质振荡器（DRO）,采用HFSS软件对介质谐振块（DR）进行三维仿真,应用Agi-lent公司的ADS软件对DRO进行了优化设计和非线性分析,用该方法制作的并联反馈式DRO性能良好,输出功率为10 dBm,相位噪声达到-100 dBc/Hz@10 kHz,-124 dBc/Hz@100 kHz。     

0.18μm CMOS工艺全集成LC谐振压控振荡器的优化设计

本文介绍了用0．18μm六层金属混合信号／射频CMOS工艺设计的两个LC谐振压控振荡器，给出了优化设计的方法、步骤和测试结果。两个振荡器均使用片上元件实现。第一个振荡器采用混合信号晶体管设计，振荡频率为2．64GHz，相位噪声为-93．5dBc／Hz@500kHz。第二个振荡器使用相同的电路结构，但采用射频晶体管设计，振荡频率为2．61GHz，相位噪声为-95．8dBc／Hz@500kHz。在2V电源下，它们的功耗均为8mW，最大输出功率分别为-7dBm和-5．4dBm。     

基于高次谐波体声波谐振器的微波跳频源研究

频率信号源已经成为现代通信系统的核心部件,是决定系统性能的关键设备。采用MEMS 工艺实验制备了Al-ZnO-Au-Sapphire 结构的高次谐波体声波谐振器(HBAR),基于HBAR 的高Q值、多模谐振特性,研究实现了高性能的微波点频源及压控形式的跳频信号源,相对于传统的晶体振荡器和DDS+PLL 的跳频源技术,电路设计简单,所需硬件数量极少,相位噪声低。测试结果显示:微波点频源输出频率2.962GHz,输出功率-5.15dBm,相位噪声达到了-112dBc/Hz@10kHz,频率稳定度小于等于8.9×10-5;跳频信号源跳频带宽56 MHz,步进频率为14 MHz,压控灵敏度为14MHz/1.8V,频率转换时间短,在导航、通信系统中将得到广泛应用。     

双频输出介质振荡器设计

利用负阻振荡的工作原理,使用ADS和HFSS仿真软件对K波段介质振荡器进行了仿真设计,加工并进行了测试,同时设计了一个双工器,使基波和谐波分别从两个端口输出。通过实测结果可以看出,双工器很好地起到了隔离作用。介绍了介质振荡器设计的重点,阐述了双工器的工作原理,分析了介质谐振器和微带线耦合的等效电路,最后给出了介质振荡器(DRO)的实测结果:在基波输出端口,输出功率为6.75 dBm,二次谐波抑制度为23 dBc,相位噪声为-96.28 dBc/Hz@100 kHz;在谐波输出端口,输出功率为1.86 dBm,基波抑制度为23 dBc,相位噪声为-87.65 dBc/Hz@100 kHz,达到很好的分离作用,达到预期效果。     

X波段介质谐振器振荡器和缓冲放大器的研究

微波振荡器代表所有基本微波通信系统的能源来源。研究设计8．95GHz的低噪声砷化镓场效应管并联反馈介质谐振器振荡器,为了放大输出功率和提高负载牵引,在介质谐振器振荡器后一级加缓冲放大器,最终的输出功率是＋13．33dBm。测试证明输出信号的相位噪声偏离中心频率100kHz可达-116．49dBc／Hz,偏离中心频率10kHz可达-91．74dBc／Hz。     

Quasi-planar K-band push-push low phase noise oscillator stabilized by cavity resonator

The results of developing a K-band (24 GHz) push-push low phase noise transistor oscillator have been presented. This oscillator is stabilized by a rectangular resonant metallic cavity. The power level of output signal is ?9.5 dBm, the fundamental harmonic suppression is 21 dB. Single sideband (SSB) phase noise spectral density of ?98 dBc/Hz at 10 kHz and ?128 dBc/Hz at 100 kHz offset from the carrier frequency is at the level of dielectric resonator oscillators (DRO) scaled to the same frequency. The oscillator features a compact size, low cost quazi-planar design and it is built using commercially available off the shelf parts.     

Hybrid high temperature superconductor/GaAs 10 GHz microwaveoscillator: temperature and bias effects

Hybrid YBa₂Cu₃O_7-x superconductor/GaAs microwave oscillators have been designed, fabricated and characterized. The planar oscillators were built on a single 10 mm×10 mm LaAlO₃ substrate. The active elements in the hybrid oscillators were GaAs MESFETs. A ring resonator was used to select and stabilize the frequency. A superconducting ring resonator had a loaded Q at 77 Kg which was 8 times larger than the loaded Q of a ring resonator fabricated out of copper. S-parameters of the GaAs FET were measured at cryogenic temperatures and used to design the oscillator which had a reflection mode configuration. The transmission lines, RF chokes and bias lines were all fabricated from YBa₂Cu₃ O_7-x superconducting thin films. The performance of the oscillators was measured as a function of temperature. The rate of change of the frequency as a function of temperature was smaller for an oscillator patterned from a pulsed laser deposited film than for an oscillator patterned from a sputtered film. As a function of bias at 77 K, the best circuit had an output power of 11.5 dBm and a maximum efficiency of 11.7% The power of the second harmonic was 25 dB to 35 dB below that of the fundamental, for every circuit. At 77 K, the best phase noise of the superconducting oscillators was 68 dBc/Hz at an offset frequency of 10 kHz and less than -93 dBc/Hz at an offset frequency of 100 kHz. At an offset frequency of 10 kHz, the superconducting oscillator had 12 dB less phase noise than the copper oscillator at 77 K     

0.35 μm SiGe BiCMOS工艺Colpitts振荡器分析与设计

应用标准0.35μm SiGe BiCMOS工艺设计Colpitts压控振荡器。采用开环S参数计算电路指标,计算结果与测量结果符合较好。测量结果表明,在3.3V电源电压下,压控振荡器的频率范围覆盖340~400MHz,10kHz频偏处相位噪声为-91dBc/Hz,输出功率-3dBm。芯片面积550μm×300μm。     

K波段推-推介质振荡器设计

为了满足现代通信系统对于高频率与高稳定性信号源的需求,提出一种K波段介质振荡器。该振荡器通过推-推结构将两路子振荡器合二为一,使其能够在一个电路中同时实现振荡器和倍频器。在介质谐振器的两条耦合微带线上增加变容二极管模块,通过改变变容二极管的偏置电压调整谐振器中传输信号的相位。变容二极管模块的加入能够有效降低有源器件不一致性对电路的影响,减少两个子振荡器在基频处对输出信号的干扰,同时让振荡器获得200 MHz左右的输出信号频率可调范围。测试结果表明:在输出频率为20.96 GHz时,输出功率约为-4.59 dBm,在10 kHz时达到-66.50 dBc/Hz的相位噪声,在100 kHz时达到-94.31 dBc/Hz的相位噪声,基波抑制度达到-25.42 dBc。     

一个8GHz高功率AlGaN/GaN HEMT VCO

基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器（VCO）。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。     

A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO

A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of -92dBc/Hz at 100-KHz offset, and -120dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications.     

A 25-GHz ultra-low phase noise InGaP/GaAs HBT VCO

A 25-GHz monolithic voltage controlled oscillator (VCO) has been designed and fabricated in a commercial InGaP/GaAs heterojunction bipolar transistor (HBT) process. This balanced VCO has a novel topology using a feedback /spl pi/-network and a common-emitter transistor configuration. Ultra-low phase noise is achieved: -106 dBc/Hz and -130 dBc/Hz at 100kHz and 1-MHz offset frequency, respectively. To the authors' knowledge, this is the lowest phase noise achieved in a monolithic microwave integrated circuit (MMIC) VCO at such high frequency. The single-ended output power is -1 dBm. It can be tuned between 25.33GHz and 25.75GHz using the base-collector junction capacitor of the HBT as a varactor. The dc power consumption is 90mW for a 9-V supply. An excellent figure-of-merit of -195 dBc/Hz is obtained.     

X波段捷变频率源设计

文章介绍了一种捷变频率源的设计方案。该方案设计的捷变频率源由10个不同频率的介质振荡器、十选一高速开关以及功率放大器三部分组成。在设计方案中,10个振荡器同时加电工作,输出频率信号到十选一开关,由TTL信号控制开关选通一路信号输出到功率放大器,功率放大器放大该信号并输出。该设计的主要特点是:高低温下频率误差小于0.3 MHz,输出功率大于10 dBm,相位噪声小于-75 dBc/Hz/10 kHz,杂波抑制大于65 dBc。文中给出了设计过程、样品研制以及测试结果。     

Silicon-based distributed voltage-controlled oscillators

Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is derived, resulting in analytical expressions for the frequency and amplitude. Two tuning techniques for DVCOs are demonstrated, namely, the inherent-varactor tuning and delay-balanced current-steering tuning. A complete analysis of the tuning techniques is presented. CMOS and bipolar DVCOs have been designed and fabricated in a 0.35-μm BiCMOS process. A 10-GHz CMOS DVCO achieves a tuning range of 12% (9.3-10.5 GHz) and a phase noise of -103 dBc/Hz at 600 kHz offset from the carrier. The oscillator provides an output power of -4.5 dBm without any buffering, drawing 14 mA of dc current from a 2.5-V power supply. A 12-GHz bipolar DVCO consuming 6 mA from a 2.5-V power supply is also demonstrated. It has a tuning range of 26% with a phase noise of -99 dBc/Hz at 600 kHz offset from the carrier