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长波红外碲镉汞探测器 总被引:1,自引:0,他引:1
1 引言 红外辐射最早是1800年英国的天文学家赫谢耳(W.Herschel)在研究太阳光谱的热效应时,用水银温度计测量各种颜色光的加热效果而发现的。1830年,L.Nobili利用塞贝克发现的温差电效应制成了“温差电型辐射探测器”; 相似文献
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报道了HgCdTe光导探测器光电参数随温度变化的关系,重点描述了光谱响应变温测试,给出了HgCdTe器件从液氮到室温 之若干个不同温度点测试的光谱响应曲线及器件变温测试的性能参数对照表,并与经验公式计算结果进行对比,给出了相应的测试误差分析。 相似文献
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本文报导探测器/微杜瓦,1.75W/80K分置式斯特林制冷机和大动态,低频,低噪音,低源阻集成前置放大器组成的全国产化工程化160元双排线列光导碲镉汞红外探测器组件和分置式斯特林制冷机制的120元单排线列光导碲镉汞红外探测器组件性能;简述组件芯片制造工艺,组件中探测器芯片,微杜瓦,网络电阻排,吸气剂,测温二极管和微型连接器间的组装技术;介绍组件机械耦合技术和总体联调技术。 相似文献
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昆明物理研究所多年来持续开展了对Au掺杂碲镉汞材料、器件结构设计、可重复的工艺开发等研究,突破了Au掺杂碲镉汞材料电学可控掺杂、器件暗电流控制等关键技术,将n-on-p型碲镉汞长波器件品质因子(R0A)从31.3Ω·cm2提升到了363Ω·cm2(λcutoff=10.5μm@80 K),器件暗电流较本征汞空位n-on-p型器件降低了一个数量级以上。研制的非本征Au掺杂长波探测器经历了超过7年的时间贮存,性能无明显变化,显示了良好的长期稳定性。基于Au掺杂碲镉汞探测器技术,昆明物理研究所实现了256×256 (30μm pitch)、640×512 (25μm pitch)、640×512 (15μm pitch)、1 024×768 (10μm pitch)等规格的长波探测器研制和批量能力,实现了非本征Au掺杂长波碲镉汞器件系列化发展。 相似文献
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LWIR HgCdTe on Si detector performance and analysis 总被引:2,自引:0,他引:2
M. Carmody J. G. Pasko D. Edwall R. Bailey J. Arias M. Groenert L. A. Almeida J. H. Dinan Y. Chen G. Brill N. K. Dhar 《Journal of Electronic Materials》2006,35(6):1417-1422
We have fabricated a series of 256 pixel×256 pixel, 40 μm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211)
silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s
double layer planar heterostructure (DLPH) diode architecture. The 78 K detector and focal plane array (FPA) performance are
discussed in terms of quantum efficiency (QE), diode dark current and dark current operability. The FPA dark current and the
tail in the FPA dark current operability histograms are discussed in terms of the HgCdTe epitaxial layer defect density and
the dislocation density of the individual diode junctions. Individual diode zero bias impedance and reverse bias current-voltage
(I-V) characteristics vs. temperature are discussed in terms of the dislocation density of the epitaxial layer, and the misfit
stress in the epitaxial multilayer structure, and the thermal expansion mismatch in the composite substrate. The fundamental
FPA performance limitations and possible FPA performance improvements are discussed in terms of basic device physics and material
properties. 相似文献
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对三种不同工艺的HgCdTe长波器件(标准工艺、回熔处理、离子注入后退火)的I-V性能分别进行测试,并通过理论计算与实验数据拟合提取上述器件参数,分析暗电流机制及导致暗电流变化的原因。文章中使用的暗电流机制的模型由扩散电流、产生-复合电流、缺陷辅助隧道电流和直接隧道电流组成。从拟合得到的器件参数中可以发现回熔过程中产生了大量的缺陷,导致缺陷辅助隧道电流、产生复合电流显著增加,器件反偏电阻减小,I-V性能变差。与离子注入后退火器件的性能变化相比,推测导致器件回熔后性能下降的原因是ZnS钝化层受热不稳定。 相似文献
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M.F. Vilela D.D. Lofgreen E.P.G. Smith M.D. Newton G.M. Venzor J.M. Peterson J.J. Franklin M. Reddy Y. Thai E.A. Patten S.M. Johnson M.Z. Tidrow 《Journal of Electronic Materials》2008,37(9):1465-1470
Long-wavelength infrared (LWIR) HgCdTe p-on-n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by
molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p-on-n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10 μm to 11 μm LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material
characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity
determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass
spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency.
Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented
and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical
etch pit densities in mid 106 cm−2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly
identical for HgCdTe grown on either Ge or Si substrates. 相似文献
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激光辐照对长滤HgCdTe光导探测器电学参数的影响 总被引:2,自引:0,他引:2
对长波HgCdTe光导探测器进行了低于其永久损伤阈值的变功率激光辐照,测量辐照前后器件的电阻-温度特征,用电阻-温度特征研究材料参数的方法对实验结果进行拟合,结果表明辐照后HgCdTe探测器件的组分变大,并由此计算得到探测器性能突变后,器件的电子迁移率与电子浓度均有一定程度减小。认为这可能是由于激光辐照的热效应使N型HgCdTe光导器件的表面及体内均产生的一定的变化所致。 相似文献
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A.I. D’Souza M.G. Stapelbroek E.W. Robinson C. Yoneyama H.A. Mills M.A. Kinch M.R. Skokan H.D. Shih 《Journal of Electronic Materials》2008,37(9):1318-1323
Time series and Fourier-transform data on high-density vertically integrated photodiodes (HDVIP) at 0 and 50 mV reverse bias
in the dark have been studied. The detectors have a cutoff wavelength λ
c (60 K) of 10.5 μm. Examination of the detector current time series and Fourier-transform curves of these devices reveals a variety of interesting
characteristics: (i) time series displaying switching between four states characteristic of random telegraph signal (RTS)
noise, the noise current power spectrum having Lorentzian or double Lorentzian type characteristics, (ii) time series data
exhibiting wave-like characteristics with the noise current power spectrum being 1/f
2-like at low frequencies, (iii) time series having a mean value independent of time with the noise current power spectrum
being white, and (iv) time series nearly independent of time with the noise current power spectrum having 1/f characteristics. Although from a single array, the excess noise characteristics at low (mHz) frequencies were varied, most
of the detectors measured fell into one of these four categories. The predominance of detectors examined had minimal excess
low-frequency noise down to ~ 10 mHz. Detectors that displayed RTS noise in reverse bias were repeatable under subsequent
measurement. However, when measured at zero bias, the same detectors exhibited no RTS noise, the noise current power spectrum
being white in nature. 相似文献
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HgCdTe长波红外n-on-p结线列的串音研究 总被引:1,自引:0,他引:1
Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed. 相似文献