Anodic Synthesis of Hierarchical SnS/SnOx Hollow Nanospheres and Their Application for High‐Performance Na‐Ion Batteries

Constructing hollow nanostructures is attractive for both fundamental research and practical applications. However, how to prepare hollow nanostructures in a simple, scalable, and cost‐effective way still remains a great challenge. In this study, for the first time, the anodization technique is applied to construct hollow nanostructures. Specifically, hollow nanospheres of SnS/SnO_x with a hierarchical porous structure are self‐assembled directly on the Sn substrate, via a convenient one‐step anodization method. When applied for sodium‐ion batteries, the thus fabricated SnS/SnO_x hollow nanospheres on the substrate readily serve as a binder‐free electrode, delivering remarkably high cycling stability and rate capability.     

Ultrafine Amorphous SnOx Embedded in Carbon Nanofiber/Carbon Nanotube Composites for Li‐Ion and Na‐Ion Batteries

Core–shell‐structured, ultrafine SnO_x/carbon nanofiber (CNF)/carbon nanotube composite films are in situ synthesized by electrospinning through a dual nozzle. The carbon shell layer functions as a buffer to prevent the separation of SnO_x particles from the CNF core, allowing full utilization of high‐capacity SnO_x in both Li‐ion and Na‐ion batteries. The composite electrodes reveal an anomalous Li‐ and Na‐ion storage mechanism where all the intermediate phases, like Li_xSn and Na_xSn alloys, maintain amorphous states during the entire charge/discharge process. The uniform dispersion on an atomic scale and the amorphous state of the SnO_x particles remain intact in the carbon matrix without growth or crystallization even after 300 cycles, which is responsible for sustaining excellent capacity retention of the electrodes. These discoveries not only shed new insights into fundamental understanding of the electrochemical behavior of SnO_x electrodes but also offer a potential strategy to improve the cyclic stability of other types of alloy anodes that suffer from rapid capacity decays due to large volume changes.     

Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells

Thin‐film solar cells consisting of earth‐abundant and non‐toxic materials were made from pulsed chemical vapor deposition (pulsed‐CVD) of SnS as the p‐type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n‐type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post‐deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright © 2014 John Wiley & Sons, Ltd.     

SnS?Sno2 conversion of chemically deposited SnS thin films

The thermal decomposition of chemically deposited SnS thin films to SnO₂ films by air annealing at temperatures up to 400°C is discussed. The conversion of a 0.7 μm thick SnS thin film to an SnO₂ film involves the creation of non-stoichiometric SnS, SnS + SnS₂ mixed phase and non-stoichiometric SnO₂ (i.e. SnO_{2 ? x}), as concluded from X-ray diffraction patterns, optical transmission spectra and electrical characteristics. The SnO₂ thin films obtained in this manner are photoconductive, with a lowest sheet resistance (in the dark) of about 10⁵ Ω/□ and an activation energy (E_a) of 0.1 eV for the electrical conductivity observed for the SnS films annealed at 325°C. This was found as the onset temperature for conversion of the SnS + SnS₂ phase to the non-stoichiometric SnO_{2 – x} film. Elevation of the annealing temperature to 400°C results in an elevation of the sheet resistance to about 10⁹ Ω/□ with the value of E_a at 1.3 eV, indicating an improvement in the degree of stoichiometry.     

A Flexible Microwave Shield with Tunable Frequency‐Transmission and Electromagnetic Compatibility

Wireless techniques have improved life quality for many. However, the drawbacks like instable signal and high loss in air of electromagnetic interference hinder its further development. One solution is to develop a smart material or device, which can selectively receive a specific frequency (f_s) of electromagnetic wave with less loss, and simultaneously show effective shielding against unwanted waves (frequency is denoted as f_p). A bottleneck has been reached, such that using materials alone is unable to achieve the above due to the limitation of the intrinsic physical properties of materials. Here, a strategy combining the material structure design with a voltage control is proposed to overcome the limitation of materials toward the aforementioned task. The efforts are focused on exploring a suitable electrically tunable material with a sensitive response to an external voltage and the flexibility to be engineered to the needed macrostructure. As a result, the f_s region can be fine‐tuned to 8–8.4, 8–9.3, and 8–10.3 GHz.     

Tuning Anionic Redox Activity and Reversibility for a High‐Capacity Li‐Rich Mn‐Based Oxide Cathode via an Integrated Strategy

When fabricating Li‐rich layered oxide cathode materials, anionic redox chemistry plays a critical role in achieving a large specific capacity. Unfortunately, the release of lattice oxygen at the surface impedes the reversibility of the anionic redox reaction, which induces a large irreversible capacity loss, inferior thermal stability, and voltage decay. Therefore, methods for improving the anionic redox constitute a major challenge for the application of high‐energy‐density Li‐rich Mn‐based cathode materials. Herein, to enhance the oxygen redox activity and reversibility in Co‐free Li‐rich Mn‐based Li_1.2Mn_0.6Ni_0.2O₂ cathode materials by using an integrated strategy of Li₂SnO₃ coating‐induced Sn doping and spinel phase formation during synchronous lithiation is proposed. As an Li⁺ conductor, a Li₂SnO₃ nanocoating layer protects the lattice oxygen from exposure at the surface, thereby avoiding irreversible oxidation. The synergy of the formed spinel phase and Sn dopant not only improves the anionic redox activity, reversibility, and Li⁺ migration rate but also decreases Li/Ni mixing. The 1% Li₂SnO₃‐coated Li_1.2Mn_0.6Ni_0.2O₂ delivers a capacity of more than 300 mAh g^?1 with 92% Coulombic efficiency. Moreover, improved thermal stability and voltage retention are also observed. This synergic strategy may provide insights for understanding and designing new high‐performance materials with enhanced reversible anionic redox and stabilized surface lattice oxygen.     

Carbon Nanotube Based Inverted Flexible Perovskite Solar Cells with All‐Inorganic Charge Contacts

Organolead halide perovskite solar cells (PSC) are arising as promising candidates for next‐generation renewable energy conversion devices. Currently, inverted PSCs typically employ expensive organic semiconductor as electron transport material and thermally deposited metal as cathode (such as Ag, Au, or Al), which are incompatible with their large‐scale production. Moreover, the use of metal cathode also limits the long‐term device stability under normal operation conditions. Herein, a novel inverted PSC employs a SnO₂‐coated carbon nanotube (SnO₂@CSCNT) film as cathode in both rigid and flexible substrates (substrate/NiO‐perovskite/Al₂O₃‐perovskite/SnO₂@CSCNT‐perovskite). Inverted PSCs with SnO₂@CSCNT cathode exhibit considerable enhancement in photovoltaic performance in comparison with the devices without SnO₂ coating owing to the significantly reduced charge recombination. As a result, a power conversion efficiency of 14.3% can be obtained on rigid substrates while the flexible ones achieve 10.5% efficiency. More importantly, SnO₂@CSCNT‐based inverted PSCs exhibit significantly improved stability compared to the standard inverted devices made with silver cathode, retaining over 88% of their original efficiencies after 550 h of full light soaking or thermal stress. The results indicate that SnO₂@CSCNT is a promising cathode material for long‐term device operation and pave the way toward realistic commercialization of flexible PSCs.     

Flexible Broadband Image Sensors with SnS Quantum Dots/Zn2SnO4 Nanowires Hybrid Nanostructures

Broadband image sensors are widely studied and applied in many fields. However, developing high‐performance flexible broadband imaging is still a great challenge that needs to be overcome. This study demonstrates a flexible broadband image sensor with SnS quantum dots (QDs)/Zn₂SnO₄ (ZTO) nanowires (NWs) hybrid nanostructures as the sensing elements, which is prepared by decorating ZTO NWs with SnS QDs via a two‐step vapor deposition method. Compared with pristine ZTO NWs, the hybrid QDs/NWs exhibit much higher photoconductive gain and specific detectivity in UV region and extended photoresponse ranging from UV to NIR region. In addition, individual hybrid QDs/NW photodetector built on polyethylene terephthalate substrate shows an excellent flexibility, mechanical stability, folding endurance, and long‐term stability. Integrated into a 10 × 10 array, a flexible broadband image sensor is fabricated. Under bending states, the flexible image sensor can still identify clearly the target images composed of white light and red light, revealing the outstanding target identification ability. The superior performance of the devices indicates that the QDs/NWs hybrid nanostructures have a tremendous application potential in future flexible broadband imaging technology.     

Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

The p‐type nanowire field‐effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in‐depth technology computer‐aided design (TCAD) with quantum models for sub‐10‐nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence‐band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe‐shell channel p‐type nanowire FET has demonstrated a strong potential for low‐power and high‐speed applications in 10‐nm‐and‐beyond complementary metal‐oxide‐semiconductor (CMOS) technology.     

High‐Performance Flexible Multilayer MoS2 Transistors on Solution‐Based Polyimide Substrates

Transition metal dichalcogenides (TMDs) layers of molecular thickness, in particular molybdenum disulfide (MoS₂), become increasingly important as active elements for mechanically flexible/stretchable electronics owing to their relatively high carrier mobility, wide bandgap, and mechanical flexibility. Although the superior electronic properties of TMD transistors are usually integrated into rigid silicon wafers or glass substrates, the achievement of similar device performance on flexible substrates remains quite a challenge. The present work successfully addresses this challenge by a novel process architecture consisting of a solution‐based polyimide (PI) flexible substrate in which laser‐welded silver nanowires are embedded, a hybrid organic/inorganic gate insulator, and multilayers of MoS₂. Transistors fabricated according to this process scheme have decent properties: a field‐effect‐mobility as high as 141 cm² V^?1 s^?1 and an I_on/I_off ratio as high as 5 × 10⁵. Furthermore, no apparent degradation in the device properties is observed under systematic cyclic bending tests with bending radii of 10 and 5 mm. Overall electrical and mechanical results provide potentially important applications in the fabrication of versatile areas of flexible integrated circuitry.     

Memristive Logic‐in‐Memory Integrated Circuits for Energy‐Efficient Flexible Electronics

A memristive nonvolatile logic‐in‐memory circuit can provide a novel energy‐efficient computing architecture for battery‐powered flexible electronics. However, the cell‐to‐cell interference existing in the memristor crossbar array impedes both the reading process and parallel computing. Here, it is demonstrated that integration of an amorphous In‐Zn‐Sn‐O (a‐IZTO) semiconductor‐based selector (1S) device and a poly(1,3,5‐trivinyl‐1,3,5‐trimethyl cyclotrisiloxane) (pV3D3)‐based memristor (1M) on a flexible substrate can overcome these problems. The developed a‐IZTO‐based selector device, having a Pd/a‐IZTO/Pd structure, exhibits nonlinear current–voltage (I–V) characteristics with outstanding stability against electrical and mechanical stresses. Its underlying conduction mechanism is systematically determined via the temperature‐dependent I–V characteristics. The flexible one‐selector?one‐memristor (1S–1M) array exhibits reliable electrical characteristics and significant leakage current suppression. Furthermore, single‐instruction multiple‐data (SIMD), the foundation of parallel computing, is successfully implemented by performing NOT and NOR gates over multiple rows within the 1S–1M array. The results presented here will pave the way for development of a flexible nonvolatile logic‐in‐memory circuit for energy‐efficient flexible electronics.     

Fully High‐Temperature‐Processed SnO2 as Blocking Layer and Scaffold for Efficient,Stable, and Hysteresis‐Free Mesoporous Perovskite Solar Cells

Planar perovskite solar cells (PSCs) based on low‐temperature‐processed (LTP) SnO₂ have demonstrated excellent photovoltaic properties duo to the high electron mobility, wide bandgap, and suitable band energy alignment of LTP SnO₂. However, planar PSCs or mesoporous (mp) PSCs based on high‐temperature‐processed (HTP) SnO₂ show much degraded performance. Here, a new strategy with fully HTP Mg‐doped quantum dot SnO₂ as blocking layer (bl) and a quite thin SnO₂ nanoparticle as mp layer are developed. The performances of both planar and mp PSCs has been greatly improved. The use of Mg‐SnO₂ in planar PSCs yields a high‐stabilized power conversion efficiency (PCE) of close to 17%. The champion of mp cells exhibits hysteresis free and stable performance with a high‐stabilized PCE of 19.12%. The inclusion of thin mp SnO₂ in PSCs not only plays a role of an energy bridge, facilitating electrons transfer from perovskite to SnO₂ bl, but also enhances the contact area of SnO₂ with perovskite absorber. Impedance analysis suggests that the thin mp layer is an “active scaffold” selectively collecting electrons from perovskite and can eliminate hysteresis and effectively suppress recombination. This is an inspiring advance toward high‐performance PSCs with HTP mp SnO₂.     

Epitaxy of Layered Orthorhombic SnS–SnSxSe(1−x) Core–Shell Heterostructures with Anisotropic Photoresponse

Vertical and in‐plane heterostructures based on van der Waals (vdW) crystals have drawn rapidly increasing attention owning to the extraordinary properties and significant application potential. However, current heterostructures are mainly limited to vdW crystals with a symmetrical hexagonal lattice, and the heterostructures made by asymmetric vdW crystals are rarely investigated at the moment. In this contribution, it is reported for the first time the synthesis of layered orthorhombic SnS–SnS_xSe_(1?x) core–shell heterostructures with well‐defined geometry via a two‐step thermal evaporation method. Structural characterization reveals that the heterostructures of SnS–SnS_xSe_(1?x) are in‐plane interconnected and vertically stacked, constructed by SnS_xSe_(1?x) shell heteroepitaxially growing on/around the pre‐synthesized SnS flake with an epitaxial relationship of (303)_SnS//(033)_SnSxSe(1?x), [010]_SnS//[100]_SnSxSe(1?x). On the basis of detailed morphology, structure and composition characterizations, a growth mechanism involving heteroepitaxial growth, atomic diffusion, as well as thermal thinning is proposed to illustrate the formation process of the heterostructures. In addition, a strong polarization‐dependent photoresponse is found on the device fabricated using the as‐prepared SnS?SnS_xSe_(1?x) core–shell heterostructure, enabling the potential use of the heterostructures as functional components for optoelectronic devices featured with anisotropy.     

Mechanical Strain‐Tunable Microwave Magnetism in Flexible CuFe2O4 Epitaxial Thin Film for Wearable Sensors

Purely mechanical strain‐tunable microwave magnetism device with lightweight, flexible, and wearable is crucial for passive sensing systems and spintronic devices (noncontact), such as flexible microwave detectors, flexible microwave signal processing devices, and wearable mechanics‐magnetic sensors. Here, a flexible microwave magnetic CuFe₂O₄ (CuFO) epitaxial thin film with tunable ferromagnetic resonance (FMR) spectra is demonstrated by purely mechanical strains, including tensile and compressive strains, on flexible fluorophlogopite (Mica) substrates. Tensile and compressive strains show remarkable tuning effects of up‐regulation and down‐regulation on in‐plane FMR resonance field (H_r), which can be used for flexible tunable resonators and filters. The out‐of‐plane FMR spectra can also be tuned by mechanical bending, including H_r and absorption peak. The change of out‐of‐plane FMR spectra has great potential for flexible mechanics‐magnetic deformation sensors. Furthermore, a superior microwave magnetic stability and mechanical antifatigue character are obtained in the CuFO/Mica thin films. These flexible epitaxial CuFO thin films with tunable microwave magnetism and excellent mechanical durability are promising for the applications in flexible spintronics, microwave detectors, and oscillators.     

The Role of Sulfur in Solution‐Processed Cu2ZnSn(S,Se)4 and its Effect on Defect Properties

Understanding the electrically active defects in kesterite Cu₂ZnSn(S,Se)₄(CZTSSe) is critical for the continued development of solar cells based on this material, but challenging due to the complex nature of this polycrystalline multinary material. A comparative study of CZTSSe alloys with three different bandgaps, made by introducing different fractions of sulfur during the annealing process, is presented. Using admittance spectroscopy, drive level capacitance profiling, and capacitance‐voltage profiling, the dominant defect energy level present in the low sulfur content device is determined to be 0.134 eV above the valence band maximum, with a bulk defect density of 8 × 10¹⁴ cm^?3, while the high sulfur content device shows a deeper defect energy level of 0.183 eV and a higher bulk defect density, 8.2 × 10¹⁵ cm^?3. These findings are consistent with the current density–voltage characteristics of the resulting solar cells and their external quantum efficiency. It suggests that as the sulfur content increases, the bandgap of the absorber is enlarged, leading to an increasing open‐circuit voltage (V_oc), that is accompanied by stronger recombination due to the higher defect density of the sulfur‐rich absorber. This is reflected in large V_oc deficit and poor carrier collection of the high sulfur content device.     

Hierarchical NiMn Layered Double Hydroxide/Carbon Nanotubes Architecture with Superb Energy Density for Flexible Supercapacitors

A hierarchical nanostructure composed of NiMn‐layered double hydroxide (NiMn‐LDH) microcrystals grafted on carbon nanotube (CNT) backbone is constructed by an in situ growth route, which exhibits superior supercapacitive performance. The resulting composite material (NiMn‐LDH/CNT) displays a three‐dimensional architecture with tunable Ni/Mn ratio, well‐defined core‐shell configuration, and enlarged surface area. An electrochemical investigation shows that the Ni₃Mn₁‐LDH/CNT electrode is rather active, which delivers a maximum specific capacitance of 2960 F g^–1 (at 1.5 A g^–1), excellent rate capability (79.5% retention at 30 A g^–1), and cyclic stability. Moreover, an all‐solid‐state asymmetric supercapacitor (SC) with good flexibility is fabricated by using the NiMn‐LDH/CNT film and reduced graphene oxide (RGO)/CNT film as the positive and negative electrode, respectively, exhibiting a wide cell voltage of 1.7 V and largely enhanced energy density up to 88.3 Wh kg^–1 (based on the total weight of the device). By virtue of the high‐capacity of pseudocapacitive hydroxides and desirable conductivity of carbon‐based materials, the monolithic design demonstrated in this work provides a promising approach for the development of flexible energy storage systems.     

Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses

Nanocrystal‐based Cu₂Zn(Sn_yGe_1‐y)(S_xSe_4‐x) (CZTGeSSe) thin‐film solar cell absorbers with tunable band gap have been prepared. Maximum solar‐conversion total area efficiencies of up to 9.4% are achieved with a Ge content of 30 at.%. Improved performance compared with similarly processed films of Cu₂ZnSn(S_xSe_4‐x) (CZTSSe, 8.4% efficiency) is achieved through controlling Ge loss from the bulk of the absorber film during the high‐temperature selenization treatment, although some Ge loss from the absorber surface is still observed following this step. Despite limitations imposed by elemental losses present at the absorber surface, we find that Ge alloying leads to enhanced performance due to increased minority charge carrier lifetimes as well as reduced voltage‐dependent charge carrier collection. Copyright © 2013 John Wiley & Sons, Ltd.     

Conformal Multifunctional Titania Shell on Iron Oxide Nanorod Conversion Electrode Enables High Stability Exceeding 30 000 Cycles in Aqueous Electrolyte

Iron oxide is promising for use in aqueous energy storage devices due to the high capacity, but one of the most challenging problems is cycling instability within the large potential window that results from the complete quasi‐conversion reaction. Herein, a conformal surface coating strategy toward iron oxide via atomic layer deposition (ALD) is presented and an Fe₃O₄@TiO₂ core–shell nanorod array anode is reported that exhibits remarkable cycling performance exceeding 30 000 times within a wide potential window in neutral lithium salt electrolyte. ALD offers a uniform and precisely controllable TiO₂ shell that not only buffers the inner volume expansion of Fe₃O₄, but also contributes extra capacity through Li⁺ intercalation/de‐intercalation and helps to alleviate the water electrolysis. Furthermore, by pairing with a pseduocapacitive cathode of V₂O₃@carbon and using a hydrogel electrolyte of PVA‐LiCl, a unique flexible quasi‐solid‐state hybrid supercapacitor can be assembled. With a high voltage of 2.0 V, the device delivers high volumetric energy and power densities (2.23 mWh cm^?3, 1090 mW cm^?3), surpassing many recently reported flexible supercapacitors. This work highlights the importance of ALD conformal multifunctional shell to instable nanoarray electrodes in aqueous electrolytes and brings new opportunities to design advanced aqueous hybrid energy storage devices.     

Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

This paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (E_a) and Urbach parameter (E_u) of n‐type hydrogenated amorphous silicon (a‐Si:H(n)) on current transport in an a‐Si:H‐based n/p TRJ has been investigated. The photoluminescence spectra and temperature‐dependent current–voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a‐Si:H‐based n/p‐type TRJ. The fabrication of a tandem cell structure consists of an a‐Si:H‐based top cell and an HIT‐type bottom cell with the a‐Si:H‐based n/p junction developed as a TRJ in between. The development of a‐Si:H‐based n/p junction as a TRJ leads to an improved a‐Si:H/HIT‐type tandem cell with a better open circuit voltage (V_oc), fill factor (FF), and efficiency. The improvements in the cell performance was attributed to the wider band‐tail states in the a‐Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be V_oc = 1430 mV, short circuit current density = 10.51 mA/cm², FF = 0.65, and efficiency = 9.75%. Copyright © 2015 John Wiley & Sons, Ltd.     

p‐Si/SnO2/Fe2O3 Core/Shell/Shell Nanowire Photocathodes for Neutral pH Water Splitting

Silicon is one of the promising materials for solar water splitting and hydrogen production; however, it suffers from two key factors, including the large external potential required to drive water splitting reactions at its surface and its instability in the electrolyte. In this study, a successful fabrication of novel p‐Si/n‐SnO₂/n‐Fe₂O₃ core/shell/shell nanowire (css‐NW) arrays, consisting of vertical Si NW cores coated with a thin SnO₂ layer and a dense Fe₂O₃ nanocrystals (NCs) shell, and their application for significantly enhanced solar water reduction in a neutral medium is reported. The p‐Si/n‐SnO₂/n‐Fe₂O₃ css‐NW structure is characterized in detail using scanning, transmission, and scanning transmission electron microscopes. The p‐Si/n‐SnO₂/n‐Fe₂O₃ css‐NWs show considerably improved photocathodic performances, including higher photocurrent and lower photocathodic turn‐on potential, compared to the bare p‐Si NWs or p‐Si/n‐SnO₂ core/shell NWs (cs‐NWs), due to increased optical absorption, enhanced charge separation, and improved gas evolution. As a result, photoactivity at 0 V versus reversible hydrogen electrode and a low onset potential in the neutral solution are achieved. Moreover, p‐Si/n‐SnO₂/n‐Fe₂O₃ css‐NWs exhibit long‐term photoelectrochemical stability due to the Fe₂O₃ NCs shell well protection. These results reveal promising css‐NW photoelectrodes from cost‐effective materials by facile fabrication with simultaneously improved photocathodic performance and stability.