Short‐Chain Ligand‐Passivated Stable α‐CsPbI3 Quantum Dot for All‐Inorganic Perovskite Solar Cells

Cubic phase CsPbI₃ (α‐CsPbI₃) perovskite quantum dots (QDs) have received extensive attention due to their all‐inorganic composition and suitable band gap (1.73 eV). However, α‐CsPbI₃ QDs might convert to δ‐CsPbI₃ (orthorhombic phase with indirect band gap of 2.82 eV) due to easy loss of surface ligands. In addition, commonly used long‐chain ligands (oleic acid, OA, and oleylamine, OLA) hinder efficient charge transport in optoelectronic devices. In order to relieve these drawbacks, OA, OLA, octanoic acid, and octylamine are used as capping ligands for synthesizing high‐quality α‐CsPbI₃ QDs. The results indicate that these QDs exhibit excellent optical properties and long‐term stability compared to QDs capped only with OA and OLA. Moreover, QDs with shorter ligands exhibit an enhanced charge transport rate, which improves the power conversion efficiency of photovoltaic devices from 7.76% to 11.87%.     

All‐Inorganic CsPbI3 Perovskite Phase‐Stabilized by Poly(ethylene oxide) for Red‐Light‐Emitting Diodes

Despite the excellent photoelectronic properties of the all‐inorganic cesium lead iodide (CsPbI₃) perovskite, which does not contain volatile and hygroscopic organic components, only a few CsPbI₃ devices are developed mainly owing to the frequent formation of an undesirable yellow δ‐phase at room temperature. Herein, it is demonstrated that a small quantity of poly(ethylene oxide) (PEO) added to the precursor solution effectively inhibits the formation of the yellow δ‐phase during film preparation, and promotes the development of a black α‐phase at a low crystallization temperature. A systematic study reveals that a thin, dense, pinhole‐free CsPbI₃ film is produced in the α‐phase and is stabilized with PEO that effectively reduces the grain size during crystallization. A thin α‐phase CsPbI₃ film with excellent photoluminescence is successfully employed in a light‐emitting diode with an inverted configuration of glass substrate/indium tin oxide/zinc oxide/poly(ethyleneimine)/α‐CsPbI₃/poly(4‐butylphenyl‐diphenyl‐amine)/WO₃/Al, yielding the characteristic red emission of the perovskite film at 695 nm with brightness, external quantum efficiency, and emission band width of ≈101 cd m^?2, 1.12%, and 32 nm, respectively.     

An Interdiffusion Method for Highly Performing Cesium/Formamidinium Double Cation Perovskites

The fabrication of high‐quality cesium (Cs)/formamidinium (FA) double‐cation perovskite films through a two‐step interdiffusion method is reported. Cs_x FA_1‐x PbI_{3‐y(1‐x )}Br_{y(1‐x )} films with different compositions are achieved by controlling the amount of CsI and formamidinium bromide (FABr) in the respective precursor solutions. The effects of incorporating Cs⁺ and Br^? on the properties of the resulting perovskite films and on the performance of the corresponding perovskite solar cells are systematically studied. Small area perovskite solar cells with a power conversion efficiency (PCE) of 19.3% and a perovskite module (4 cm²) with an aperture PCE of 16.4%, using the Cs/FA double cation perovskite made with 10 mol% CsI and 15 mol% FABr (Cs_0.1FA_0.9PbI_2.865Br_0.135) are achieved. The Cs/FA double cation perovskites show negligible degradation after annealing at 85 °C for 336 h, outperforming the perovskite materials containing methylammonium (MA).     

Overcoming Zinc Oxide Interface Instability with a Methylammonium‐Free Perovskite for High‐Performance Solar Cells

Perovskite solar cells have achieved the highest power conversion efficiencies on metal oxide n‐type layers, including SnO₂ and TiO₂. Despite ZnO having superior optoelectronic properties to these metal oxides, such as improved transmittance, higher conductivity, and closer conduction band alignment to methylammonium (MA)PbI₃, ZnO is largely overlooked due to a chemical instability when in contact with metal halide perovskites, which leads to rapid decomposition of the perovskite. While surface passivation techniques have somewhat mitigated this instability, investigations as to whether all metal halide perovskites exhibit this instability with ZnO are yet to be undertaken. Experimental methods to elucidate the degradation mechanisms at ZnO–MAPbI₃ interfaces are developed. By substituting MA with formamidinium (FA) and cesium (Cs), the stability of the perovskite–ZnO interface is greatly enhanced and it is found that stability compares favorably with SnO₂‐based devices after high‐intensity UV irradiation and 85 °C thermal stressing. For devices comprising FA‐ and Cs‐based metal halide perovskite absorber layers on ZnO, a 21.1% scanned power conversion efficiency and 18% steady‐state power output are achieved. This work demonstrates that ZnO appears to be as feasible an n‐type charge extraction layer as SnO₂, with many foreseeable advantages, provided that MA cations are avoided.     

Stable α‐CsPbI3 Perovskite Nanowire Arrays with Preferential Crystallographic Orientation for Highly Sensitive Photodetectors

All‐inorganic metal‐halide perovskites CsPbX₃ (X = Cl, Br, I) exhibit higher stability than their organic–inorganic hybrid counterparts, but the thermodynamically instable perovskite α phase at room temperature of CsPbI₃ restricts the practical optoelectronic applications. Although the stabilization of α‐CsPbI₃ polycrystalline thin films is extensively studied, the creation of highly crystalline micro/nanostructures of α‐CsPbI₃ with large grain size and suppressed grain boundary remains challenging, which impedes the implementations of α‐CsPbI₃ for lateral devices, such as photoconductor‐type photodetectors. In this work, stable α‐CsPbI₃ perovskite nanowire arrays are demonstrated with large grain size, high crystallinity, regulated alignment, and position by controlling the dewetting dynamics of precursor solution on an asymmetric‐wettability topographical template. The correlation between the higher photoluminescence (PL) intensity and longer PL lifetime indicates the nanowires exhibit stable α phase and suppressed trap density. The preferential (100) orientation is characterized by discrete diffraction spots in grazing incidence wide‐angle scattering patterns, suggesting the long‐range crystallographic order of these nanowires. Based on these high‐quality nanowire arrays, highly sensitive photodetectors are realized with a responsivity of 1294 A W^?1 and long‐term stability with 90% performance retention after 30‐day ambient storage.     

Detection of X‐Rays by Solution‐Processed Cesium‐Containing Mixed Triple Cation Perovskite Thin Films

Materials and technology development for designing innovative and efficient X‐ray radiation detectors is of utmost importance for a wide range of applications ranging from security to medical imaging. Here, highly sensitive direct X‐ray detectors based on novel cesium (Cs)‐based triple cation mixed halide perovskite thin films are reported. Despite being in a thin film form, the devices exhibit a remarkably high X‐ray sensitivity of (3.7 ± 0.1) µC Gy^?1 cm^?2 under short‐circuit conditions. At a small reverse bias of 0.4 V, the sensitivity further increases by orders of magnitude reaching a record value of (97 ± 1) µC Gy^?1 cm^?2 which surpasses state‐of‐the‐art inorganic large‐area detectors (a‐Se and poly‐CZT). Based on detailed structural, electrical, and spectroscopic investigations, the exceptional sensitivity of the triple cation Cs perovskite is attributed to its high ambipolar mobility‐lifetime product as well as to the formation of a pure stable perovskite phase with a low degree of energetic disorder, due to an efficient solution‐based alloying of individual n‐ and p‐type perovskite semiconductors.     

Room‐Temperature Partial Conversion of α‐FAPbI3 Perovskite Phase via PbI2 Solvation Enables High‐Performance Solar Cells

The two‐step conversion process consisting of metal halide deposition followed by conversion to hybrid perovskite has been successfully applied toward producing high‐quality solar cells of the archetypal MAPbI₃ hybrid perovskite, but the conversion of other halide perovskites, such as the lower bandgap FAPbI₃, is more challenging and tends to be hampered by the formation of hexagonal nonperovskite polymorph of FAPbI₃, requiring Cs addition and/or extensive thermal annealing. Here, an efficient room‐temperature conversion route of PbI₂ into the α‐FAPbI₃ perovskite phase without the use of cesium is demonstrated. Using in situ grazing incidence wide‐angle X‐ray scattering (GIWAXS) and quartz crystal microbalance with dissipation (QCM‐D), the conversion behaviors of the PbI₂ precursor from its different states are compared. α‐FAPbI₃ forms spontaneously and efficiently at room temperature from P₂ (ordered solvated polymorphs with DMF) without hexagonal phase formation and leads to complete conversion after thermal annealing. The average power conversion efficiency (PCE) of the fabricated solar cells is greatly improved from 16.0(±0.32)% (conversion from annealed PbI₂) to 17.23(±0.28)% (from solvated PbI₂) with a champion device PCE > 18% due to reduction of carrier recombination rate. This work provides new design rules toward the room‐temperature phase transformation and processing of hybrid perovskite films based on FA⁺ cation without the need for Cs⁺ or mixed halide formulation.     

Precursor Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with 14.78% Efficiency

The optoelectronic properties of perovskite films are closely related to the film quality, so depositing dense, uniform, and stable perovskite films is crucial for fabricating high‐performance perovskite solar cells (PSCs). CsPbI₂Br perovskite, prized for its superb stability toward light soaking and thermal aging, has received a great deal of attention recently. However, the air instability and poor performance of CsPbI₂Br PSCs are hindering its further progress. Here, an approach is reported for depositing high‐quality CsPbI₂Br films via the Lewis base adducts PbI₂(DMSO) and PbBr₂(DMSO) as precursors to slow the crystallization of the perovskite film. This process produces CsPbI₂Br films with large‐scale crystalline grains, flat surfaces, low defects, and long carrier lifetimes. More interestingly, PbI₂(DMSO) and PbBr₂(DMSO) adducts could significantly improve the stability of CsPbI₂Br films in air. Using films prepared by this technique, a power conversion efficiency (PCE) of 14.78% is obtained in CsPbI₂Br PSCs, which is the highest PCE value reported for CsPbI₂Br‐based PSCs to date. In addition, the PSCs based on DMSO adducts show an extended operational lifetime in air. These excellent performances indicate that preparing high‐quality inorganic perovskite films by using DMSO adducts will be a potential method for improving the performance of other inorganic PSCs.     

Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching

CsPbX₃ (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI₃ perovskite are reported. An air‐stable CsPbI₃ perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon substrate using low temperature all‐solution process. The RS memory devices of Ag/polymethylmethacrylate (PMMA)/CsPbI₃/Pt/Ti/SiO₂/Si structure exhibit reproducible and reliable bipolar switching characteristics with an ultralow operating voltage (<+0.2 V), high on/off ratio (>10⁶), reversible RS by pulse voltage operation (pulse duration < 1 ms), and multilevel data storage. The mechanical flexibility of the CsPbI₃ perovskite RS memory device on a flexible substrate is also successfully confirmed. With analyzing the influence of phase transition in CsPbI₃ on RS characteristics, a mechanism involving conducting filaments formed by metal cation migration is proposed to explain the RS behavior of the memory device. This study will contribute to the understanding of the intrinsic characteristics of IHPs for low‐voltage resistive switching and demonstrate the huge potential of them for use in low‐power consumption nonvolatile memory devices on next‐generation computing systems.     

Controlled n‐Doping in Air‐Stable CsPbI2Br Perovskite Solar Cells with a Record Efficiency of 16.79%

Cesium‐based inorganic perovskites, such as CsPbI₂Br, are promising candidates for photovoltaic applications owing to their exceptional optoelectronic properties and outstanding thermal stability. However, the power conversion efficiency of CsPbI₂Br perovskite solar cells (PSCs) is still lower than those of hybrid PSCs and inorganic CsPbI₃ PSCs. In this work, passivation and n‐type doping by adding CaCl₂ to CsPbI₂Br is demonstrated. The crystallinity of the CsPbI₂Br perovskite film is enhanced, and the trap density is suppressed after adding CaCl₂. In addition, the Fermi level of the CsPbI₂Br is changed by the added CaCl₂ to show heavy n‐type doping. As a result, the optimized CsPbI₂Br PSC shows a highest open circuit voltage of 1.32 V and a record efficiency of 16.79%. Meanwhile, high air stability is demonstrated for a CsPbI₂Br PSC with 90% of the initial efficiency remaining after more than 1000 h aging in air.     

Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses

Neuromorphic computing, which mimics biological neural networks, can overcome the high‐power and large‐throughput problems of current von Neumann computing. Two‐terminal memristors are regarded as promising candidates for artificial synapses, which are the fundamental functional units of neuromorphic computing systems. All‐inorganic CsPbI₃ perovskite‐based memristors are feasible to use in resistive switching memory and artificial synapses due to their fast ion migration. However, the ideal perovskite phase α‐CsPbI₃ is structurally unstable at ambient temperature and rapidly degrades to a non‐perovskite δ‐CsPbI₃ phase. Here, dual‐phase (Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6 is successfully fabricated to achieve improved air stability and surface morphology compared to each single phase. Notably, the Ag/polymethylmethacrylate/(Cs₃Bi₂I₉)_0.4?(CsPbI₃)_0.6/Pt device exhibits non‐volatile memory functions with an endurance of ≈10³ cycles and retention of ≈10⁴ s with low operation voltages. Moreover, the device successfully emulates synaptic behavior such as long‐term potentiation/depression and spike timing/width‐dependent plasticity. This study will contribute to improving the structural and mechanical stability of all‐inorganic halide perovskites (IHPs) via the formation of dual phase. In addition, it proves the great potential of IHPs for use in low‐power non‐volatile memory devices and electronic synapses.     

Organic Cation‐Dependent Degradation Mechanism of Organotin Halide Perovskites

The applications of organotin halide perovskites are limited because of their chemical instability under ambient conditions. Upon air exposure, Sn²⁺ can be rapidly oxidized to Sn⁴⁺, causing a large variation in the electronic properties. Here, the role of organic cations in degradation is investigated by comparing methylammonium tin iodide (MASnI₃) and formamidinium tin iodide (FASnI₃). Through chemical analyses and theoretical calculations, it is found that the organic cation strongly influences the oxidation of Sn²⁺ and the binding of H₂O molecules to the perovskite lattice. On the one hand, Sn²⁺ can be easily oxidized to Sn⁴⁺ in MASnI₃, and replacing MA with FA reduces the extent of Sn oxidation; on the other hand, FA forms a stronger hydrogen bond with H₂O than does MA, leading to partial expansion of the perovskite network. The two processes compete in determining the material's conductivity. It is noted that the oxidation is a difficult process to prevent, while the water effect can be largely suppressed by reducing the moisture level. As a result, FASnI₃‐based conductors and photovoltaic cells exhibit much better reproducibility as compared to MASnI₃‐based devices. This study sheds light on the development of stable Pb‐free perovskite optoelectronic devices through new material design.     

Passivated Perovskite Crystallization via g‐C3N4 for High‐Performance Solar Cells

Organometallic halide perovskite films with good surface morphology and large grain size are desirable for obtaining high‐performance photovoltaic devices. However, defects and related trap sites are generated inevitably at grain boundaries and on surfaces of solution‐processed polycrystalline perovskite films. Seeking facial and efficient methods to passivate the perovskite film for minimizing defect density is necessary for further improving the photovoltaic performance. Here, a convenient strategy is developed to improve perovskite crystallization by incorporating a 2D polymeric material of graphitic carbon nitride (g‐C₃N₄) into the perovskite layer. The addition of g‐C₃N₄ results in improved crystalline quality of perovskite film with large grain size by retarding the crystallization rate, and reduced intrinsic defect density by passivating charge recombination centers around the grain boundaries. In addition, g‐C₃N₄ doping increases the film conductivity of perovskite layer, which is beneficial for charge transport in perovskite light‐absorption layer. Consequently, a champion device with a maximum power conversion efficiency of 19.49% is approached owing to a remarkable improvement in fill factor from 0.65 to 0.74. This finding demonstrates a simple method to passivate the perovskite film by controlling the crystallization and reducing the defect density.     

NbF5: A Novel α‐Phase Stabilizer for FA‐Based Perovskite Solar Cells with High Efficiency

The HC(NH₂)₂⁺(FA⁺) is a well‐known substitute to CH₃NH₃⁺(MA⁺) for its capability to extend light utilization for improved power conversion efficiency for perovskite solar cells; unfortunately, the dark cubic phase (α‐phase) can easily transition to the yellow orthorhombic phase (δ‐phase) at room temperature, an issue that prevents its commercial application. In this report, an inorganic material (NbF₅) is developed to stabilize the desired α‐phase perovskite material by incorporating NbF₅ additive into the perovskite films. It is found that the NbF₅ additive effectively suppresses the formation of the yellow δ‐phase in the perovskite synthesis and aging process, thus enhancing the humidity and light‐soaking stability of the perovskite film. As a result, the perovskite solar cells with the NbF₅ additive exhibit improved air stability by tenfold, retaining nearly 80% of their initial efficiency after aging in air for 50 d. In addition, under full‐sun AM 1.5 G illumination of a xenon lamp without any UV‐reduction, the perovskite solar cells with the NbF₅ additive also show fivefold improved illumination stability than the control devices without NbF₅.     

Perovskite‐Based Tandem Solar Cells: Get the Most Out of the Sun

Tandem solar cells (TSCs) comprising stacked narrow‐bandgap and wide‐bandgap subcells are regarded as the most promising approach to break the Shockley–Queisser limit of single‐junction solar cells. As the game‐changer in the photovoltaic community, organic–inorganic hybrid perovskites became the front‐runner candidate for mating with other efficient photovoltaic technologies in the tandem configuration for higher power conversion efficiency, by virtue of their tunable and complementary bandgaps, excellent photoelectric properties, and solution processability. In this review, a perspective that critically dilates the progress of perovskite material selection and device design for perovskite‐based TSCs, including perovskite/silicon, perovskite/copper indium gallium selenide, perovskite/perovskite, perovskite/CdTe, and perovskite/GaAs are presented. Besides, all‐inorganic perovskite CsPbI₃ with high thermal stability is proposed as the top subcell in TSCs due to its suitable bandgap of ≈1.73 eV and rapidly increasing efficiency. To minimize the optical and electrical losses for high‐efficiency TSCs, the optimization of transparent electrodes, recombination layers, and the current‐matching principles are highlighted. Through big data analysis, wide‐bandgap perovskite solar cells with high open‐circuit voltage (V_oc) are in dire need in further study. In the end, opportunities and challenges to realize the commercialization of TSCs, including long‐term stability, area upscaling, and mitigation of toxicity, are also envisioned.     

Modifying Surface Termination of CsPbI3 Grain Boundaries by 2D Perovskite Layer for Efficient and Stable Photovoltaics

It is highly desirable for all-inorganic perovskite solar cells (PVSCs) to have reduced nonideal interfacial charge recombination in order to improve the performance. Although the construction of a 2D capping layer on 3D perovskite is an effective way to suppress interfacial nonradiative recombination, it is difficult to apply it to all-inorganic perovskites because of the resistance of Cs⁺ cesium ions in cation exchange reactions. To alleviate this problem, a simple approach using an ultra-thin 2D perovskite to terminate CsPbI₃ grain boundaries (GBs) without damaging the original 3D perovskite is developed. The 2D perovskite at the GBs not only enhances the charge-carrier extraction and transport but also effectively suppresses nonradiative recombination. In addition, because the 2D perovskite can prevent the moisture and oxygen from penetrating into the GBs and at the same time suppress the ion migration, the 2D terminated CsPbI₃ films exhibit significantly improved stability against humidity. Moreover, the devices without encapsulation can retain ≈81% of its initial power conversion efficiency (PCE) after being stored at 40 ± 5% relative humidity for 84 h. The 2D-based champion device exhibits a high PCE of 18.82% with a high open-circuit voltage of 1.16 V.     

Composition Engineering of All‐Inorganic Perovskite Film for Efficient and Operationally Stable Solar Cells

Cesium‐based inorganic perovskites have recently attracted great research focus due to their excellent optoelectronic properties and thermal stability. However, the operational instability of all‐inorganic perovskites is still a main hindrance for the commercialization. Herein, a facile approach is reported to simultaneously enhance both the efficiency and long‐term stability for all‐inorganic CsPbI_2.5Br_0.5 perovskite solar cells via inducing excess lead iodide (PbI₂) into the precursors. Comprehensive film and device characterizations are conducted to study the influences of excess PbI₂ on the crystal quality, passivation effect, charge dynamics, and photovoltaic performance. It is found that excess PbI₂ improves the crystallization process, producing high‐quality CsPbI_2.5Br_0.5 films with enlarged grain sizes, enhanced crystal orientation, and unchanged phase composition. The residual PbI₂ at the grain boundaries also provides a passivation effect, which improves the optoelectronic properties and charge collection property in optimized devices, leading to a power conversion efficiency up to 17.1% with a high open‐circuit voltage of 1.25 V. More importantly, a remarkable long‐term operational stability is also achieved for the optimized CsPbI_2.5Br_0.5 solar cells, with less than 24% degradation drop at the maximum power point under continuous illumination for 420 h.     

Highly-Stable CsPbI3 Perovskite Solar Cells with an Efficiency of 21.11% via Fluorinated 4-Amino-Benzoate Cesium Bifacial Passivation

The poor interface quality between cesium lead triiodide (CsPbI₃) perovskite and the electron transport layer limits the stability and efficiency of CsPbI₃ perovskite solar cells (PSCs). Herein, a 4-amino-2,3,5,6-tetrafluorobenzoate cesium (ATFC) is designed as a bifacial defect passivator to tailor the perovskite/TiO₂ interface. The comprehensive experiments demonstrate that ATFC can not only optimize the conductivity, electron mobility, and energy band structure of the TiO₂ layer by passivation of the undercoordinated Ti⁴⁺, oxygen vacancy (V_O), and free  OH defects but also promote the yield of high-quality CsPbI₃ film by synergistic passivation of undercoordinated Pb²⁺ defects with the  CO group and F atom, and limiting I⁻ migration via F···I interaction. Benefiting from the above interactions, the ATFC-modified CsPbI₃ device yields a champion power conversion efficiency (PCE) of 21.11% and an excellent open-circuit voltage (V_OC) of 1.24 V. Meanwhile, the optimized CsPbI₃ PSC maintains 92.74% of its initial efficiency after aging 800 h in air atmosphere, and has almost no efficiency attenuation after tracking at maximum power point for 350 h.     

Octadecylamine‐Functionalized Single‐Walled Carbon Nanotubes for Facilitating the Formation of a Monolithic Perovskite Layer and Stable Solar Cells

Organic–inorganic lead halide perovskites have shown great future for application in solar cells owing to their exceptional optical and electronic properties. To achieve high‐performance perovskite solar cells, a perovskite light absorbing layer with large grains is desirable in order to minimize grain boundaries and recombination during the operation of the device. Herein, a simple yet efficient approach is developed to synthesize perovskite films consisting of monolithic‐like grains with micrometer size through in situ deposition of octadecylamine functionalized single‐walled carbon nanotubes (ODA‐SWCNTs) onto the surface of the perovskite layer. The ODA‐SWCNTs form a capping layer that controls the evaporation rate of organic solvents in the perovskite film during the postthermal treatment. This favorable morphology in turn dramatically enhances the short‐circuit current density of the perovskite solar cells and almost completely eliminates the hysteresis. A maximum power conversion efficiency of 16.1% is achieved with an ODA‐SWCNT incorporated planar solar cell using (FA_0.83MA_0.17)_0.95Cs_0.05Pb(I_0.83Br_0.17)₃ as light absorber. Furthermore, the perovskite solar cells with ODA‐SWCNT demonstrate extraordinary stability with performance retention of 80% after 45 d stability testing under high humidity (60–90%) environment. This work opens up a new avenue for morphology manipulation of perovskite films and enhances the device stability using carbon material.     

The Role of Chlorine in the Formation Process of “CH3NH3PbI3‐xClx” Perovskite

CH₃NH₃PbI_3‐xCl_x is a commonly used chemical formula to represent the methylammonium lead halide perovskite fabricated from mixed chlorine‐ and iodine‐containing salt precursors. Despite the rapid progress in improving its photovoltaic efficiency, fundamental questions remain regarding the atomic ratio of Cl in the perovskite as well as the reaction mechanism that leads to its formation and crystallization. In this work we investigated these questions through a combination of chemical, morphological, structural and thermal characterizations. The elemental analyses reveal unambiguously the negligible amount of Cl atoms in the CH₃NH₃PbI_3‐xCl_x perovskite. By studying the thermal characteristics of methylammonium halides as well as the annealing process in a polymer/perovskite/FTO glass structure, we show that the formation of the CH₃NH₃PbI_3‐xCl_x perovskite is likely driven by release of gaseous CH₃NH₃Cl (or other organic chlorides) through an intermediate organometal mixed halide phase. Furthermore, the comparative study on CH₃NH₃I/PbCl₂ and CH₃NH₃I/PbI₂ precursor combinations with different molar ratios suggest that the initial introduction of a CH₃NH₃⁺ rich environment is critical to slow down the perovskite formation process and thus improve the growth of the crystal domains during annealing; accordingly, the function of Cl^? is to facilitate the release of excess CH₃NH₃⁺ at a relatively low annealing temperatures.