可调谐垂直腔面发射激光器

近年来国内外在可调谐垂直腔面发射激光器这一研究领域取得了极大的进步。叙述了可调谐垂直腔面发射激光器的结构原理和发展历程,对不同结构的优缺点作了对比介绍,展望了可调谐激光器的发展前景。这种器件在光传输、光互连及光并行信息处理等方面有着良好的应用前景。     

High-speed modulation characteristics of helium-implantedzinc-diffused vertical cavity surface emitting lasers

The high-speed modulation characteristics of helium-implanted zinc-diffused vertical cavity surface emitting semiconductor lasers are measured. Devices with a nominal active region diameter of 10 and 20 μm exhibit a move-out rate of 4.5-6.5 GHz/mW^1/2 and a K factor of 0.65-0.85 ns. Maximum modulation frequency is limited by ohmic heating to approximately 5.5 GHz for 10-μm diameter lasers and to 2.7 GHz for 20-μm diameter lasers. A rolloff in the response below the relaxation oscillation frequency is observed and is explained well by a diffusion capacitance model     

垂直腔表面发射激光器的研究

垂直腔表面发射激光器(VCSEL)是一种应用于光纤通信系统的低成本、高性能的特定波长光源,它具有测试简单、易耦舍以及易形成阵列等独特优势,已在光并行互连及高密度光存贮等领域得到大规模应用.文章介绍了VCSEL的结构和当前的制造工艺水平,阐述了各波段VCSEL的发展和应用现状,探讨了VCSEL在不同领域中的应用范围并指出了VCSEL的发展前景.     

Microchip vertical external cavity surface emitting lasers

Monolithic vertical external cavity surface emitting lasers of cavity mode volume <1 mm/sup 3/ have been fabricated in the 850 and 980 nm wavelength range. Pump-limited output power >350 mW in a TEM/sub 00/ mode was obtained at 850 nm. Output power >2.5 W was obtained at 980 nm.     

长波长垂直腔面发射激光器

给出了长波长垂直腔面发射激光器的器件结构的发展现状，同时对GaInNAs／GaAs垂直腔面发射激光器进行了详细的介绍。最后，给出了所设计的新型1.3μm GaInNAs/GaAs长波长垂直外腔面发射半导体激光器的结构设计，有源区量子阱由980nm半导体激光二极管进行泵浦。这种器件设计实现了激光二极管泵浦与长波长垂直腔面发射激光器的有机结合，同时具有两者的优点。此外，本文还对器件的阈值特性和光输出功率进行了理论计算。     

Transverse mode selection with a passive antiguide region invertical cavity surface emitting lasers

We report a numerical analysis on the transverse mode behavior of a novel passive antiguide region buried heterostructure vertical cavity surface emitting laser, which emits a single stable transverse mode from a large aperture. Two- and three-dimensional beam propagation methods were used to calculate the threshold gains and the actual modal profiles for the fundamental and first order modes. We show that the passive antiguide structure is the main modal selection mechanism and the high order modes suffer much higher losses such that they are highly suppressed from reaching thresholds     

高功率980nm垂直腔面发射激光器的温度特性

应变补偿量子阱结构因带宽大、增益高和波长漂移速度低等特点而成为近年来研究的热点.首次介绍了国内980 nm 高功率InGaAs/GaAsP应变补偿量子阱结构的垂直腔面发射激光器(VCSEL) 变温实验,测得脉冲条件下600 μm直径的器件在10-100℃温度范围内发射波长漂移速度为0.05 nm/K,阈值电流随温度变化呈现先缓慢下降后迅速上升的特性.结合VCSEL反射谱、PL谱和增益峰值波长漂移速度,对器件阈值电流特性进行了合理的分析和解释.连续工作状态下,测试得到器件峰值功率为1 W,根据波长与耗散功率的实验曲线及热阻计算公式,可估算出垂直腔面发射激光器热阻值为10 K/W.     

Optically pumped blue-green vertical cavity surface emitting lasers

Optically pumped vertical cavity laser operation up to T=260K has been achieved in the 480-500 nm-wavelength range in ZnCdSe-ZnSSe-ZnMgSSe pseudomorphic separate confinement heterostructures, containing three active quantum well layers and dielectric high reflectivity mirrors     

Coupled-defect photonic crystal vertical cavity surface emitting lasers

Photonic crystal patterns containing two defects were fabricated within a large gain area in vertical cavity surface emitting lasers. By designing effective refractive index changes in the region between the defects through cavity shifts caused by photonic crystals, it was possible to coherently couple laser light output from the defects. This enables a novel way to fabricate coherently coupled laser arrays.     

Equivalent circuit for vertical cavity top surface emitting lasers

A small signal equivalent circuit for VCSELs is developed which provides an excellent fit to measured S-parameter data. Equivalent circuits were obtained for 6 mu m diameter, 780nm, gain guided VCSELs with 14GHz modulation bandwidth, the highest yet reported.<>     

Control of polarization switching in vertical coupled-cavities surface emitting lasers

We report a novel three-contact vertical-cavity surface-emitting laser (VCSEL) for use in polarization-sensitive optical applications. The device consists of two vertical cavities, coupled by a common mirror. We demonstrate that one can independently choose both the power of the output beam-through the current in the first cavity-and the polarization state-through the bias applied to the second cavity. The control of the polarization state is performed with a control voltage in the range -2 to 0 V. Within this interval, the structure exhibits a bistable behavior. We present the very first experimental proof of nonthermal, electrically induced polarization switching in coupled-cavities VCSELs.     

室温连续可见光垂直腔面发射激光器

利用钨丝掩膜质子轰击工艺制造出一种室温条件下可连续工作的可见光垂直腔面发射激光器。激射波长为６５０ｎｍ,未装在热沉上时连续工作最大输出功率为８５μＷ。     

Enhancement of spin information with vertical cavity surface emitting lasers

How the output polarisation of vertical cavity surface emitting lasers (VCSELs) can be controlled by the spin polarisation of the electrons in the active region is analysed. The main result is that a spin controlled VCSEL is feasible under realistic device conditions, i.e. at room temperature and for continuous wave operation.     

High-efficiency dual-beam vertical cavity surface emitting lasers for inteferometric applications

Reported are the characteristics of 850 nm vertical cavity surface emitting lasers (VCSELs) with integrated linear diffractive gratings emitting a dual-beam output with negligible increase in threshold and excellent zero-order cancellation. Power emitted into the first orders is greater than 80%. The use of a dual-beam VCSEL for measurement of surface topography using interferometry is demonstrated     

Influence of cavity tuning on the transverse mode invertical-cavity lasers

Data are presented showing the dependence of the transverse mode on the relative tuning of the cavity resonance to the gain peak in vertical-cavity surface-emitting lasers. Higher-order lasing modes are favored for the condition of a cavity resonant wavelength longer than that of the gain peak wavelength, while lower-order (single-lobed) radiation patterns are favored for the cavity resonance at a shorter wavelength than that of the gain peak     

Multiple-input optical control of vertical cavity surface emitting lasers using intracavity-coupled in-plane lasers

We report new experimental results demonstrating optical bistability and two-input NOR gate operation in intracavity-coupled in-plane and vertical cavity surface emitting lasers (VCSELs) fabricated from the same epitaxial material. The VCSEL (or output) section gain is controlled by separately biased in-plane laser section(s), and depending on the in-plane power output, complete quenching of stimulated emission in the VCSEL is observed. Hysteresis is present in the VCSEL output power versus in-plane laser input power characteristic, and an optical memory effect is observed in the combined device.     

Lateral mode discrimination in surface emitting DBR lasers withcylindrical symmetry

The effective reflectivity and the threshold gain of all lateral modes in a surface emitting DBR laser with cylindrical symmetry are analyzed using the coupled-mode approach. Our results indicate that when a cavity is designed for operation in the odd modes, all even modes are effectively eliminated. A small perturbation is introduced into the complex dielectric constant of the active region to suppress the unwanted lateral modes of odd symmetry. The model predicts that lasing will occur in a single mode with a narrow far-field pattern     

GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm

Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.     

Optoelectronic exclusive-OR using hybrid integration ofphototransistors and vertical cavity surface emitting lasers

Heterojunction phototransistors and surface-emitting lasers were used to demonstrate two new optoelectronic circuits that implement the exclusive-OR (XOR) function. One of the circuits also determines which of the two inputs is greater than the other. The XOR gates have high ON/OFF contrast ratios (>28:1) and optical gate gain ≈3     

Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

It has been shown that the use of submonolayer InAs insertions as an active region of AlGaAs vertical cavity surface emitting lasers make it possible to attain resonant frequencies as high as 17 GHz. In this case, single-mode devices with a smaller diameter of the current aperture make it possible to attain higher frequencies at lower current densities than those of multimode devices with a larger aperture diameter. The maximum error-free data transmission rate in the direct modulation mode in NRZ format is 20 Gb/s and is limited by the parasitic cutoff frequency. The high resonant frequency suggests that further optimization of the device design, directed to decreasing the electrical capacitance and resistances, the data transmission rate in lasers based on submonolayer insertions can be increased to 40 Gb/s.