Influence of cooling mode on the electrical properties and microstructure of Ba1.022−xSmxTiO3 ceramics sintered in a reducing atmosphere

We investigated the effects of the Sm-dopant content and the cooling rate on the electrical properties and microstructure of Ba_1.022−xSm_xTiO₃ (BST) ceramics, which were sintered at 1200 °C for 30 min in a reducing atmosphere and then reoxidized at 800 °C for 1 h. The results indicated that the cooling rate affected the electrical properties and the microstructure of the BST samples, whose room-temperature resistivity increased with increasing cooling rate. The semiconducting BST ceramics showed a pronounced positive temperature coefficient of resistivity effect, with a resistance jump greater by 3.16 orders of magnitude, along with a low room-temperature resistivity of 157.4 Ω cm at a cooling rate of 4 °C/min. The room-temperature resistivity of the specimen was lower after sintering for 30 min at 1150 °C during cooling.     

TEM observation of liquid phase sintering in V2O5 modified Zr0.8Sn0.2TiO4 microwave ceramics

The phenomena of liquid phase sintering in the V₂O₅ modified (Zr_0.8, Sn_0.2)TiO₄ (ZST) microwave ceramics has been investigated by using transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDS). The amounts of second phase were too low to be detected by X-ray diffraction (XRD), but could be observed by TEM bright field image. However, the presence of grain boundary phases did not degrade the microwave properties of V₂O₅ modified ZST ceramics. The ?_r value of 37.2, Q × f value of 51,000 (at 7 GHz) and τ_f value of −2.1 ppm/°C were obtained for ZST ceramics with 1 wt% V₂O₅ addition sintered at 1300 °C.     

Effects of sintering temperature and poling conditions on the electrical properties of Ba0.70Ca0.30TiO3 diphasic piezoelectric ceramics

The effects of sintering temperature and poling conditions on the electrical properties of tetragonal and orthorhombic diphasic Ba_0.70Ca_0.30TiO₃ (BCT) lead-free ceramics have been systematically investigated. On the one hand, with increasing sintering temperature from 1270 °C to 1400 °C, the bulk density increases monotonically and the Curie temperature keeps almost constant with the value of ∼120 °C, whereas the grain size, the maximum relative dielectric constant, room temperature polarization reach the maximum values for samples sintered at 1340 °C. On the other hand, it is found that the piezoelectric property depends on poling electric field and poling temperature significantly. An enhanced piezoelectric behavior of d₃₃=126 pC/N, k_p=0.29, and Q_m=588 is obtained for the BCT ceramics poled at 100 °C with 30 kV/cm field for 20 min. The aging behavior of the piezoelectric property is also investigated.     

Preparation, characterization and dielectric properties of CaCu3Ti4O12 ceramics

CaCu₃Ti₄O₁₂ nano-sized powders were successfully prepared by sol-gel technique and calcination at 600-900 °C. The thermal decomposition process, phase structures and morphology of synthesized powders were characterized by IR, DSC-TG, XRD, TEM, respectively. It was found that the main weight-loss and decomposition of precursors occurred below 450 °C and the complex perovskite phase appeared when the calcination temperature was higher than 700 °C. Using above synthesized powders as starting materials, CCTO-based ceramics with excellent dielectric properties (?₂₅ = 5.9 × 10⁴, tan δ = 0.06 at 1.0 kHz) were prepared by sintering at 1125 °C. According to the results, a conduction mechanism was proposed to explain the origin of giant dielectric constant in CCTO system.     

Synthesis and properties of (BaxPb1−x)(Zn1/3Nb2/3)O3 relaxor ferroelectric ceramics using a reaction-sintering process

(Ba_xPb_1−x)(Zn_1/3Nb_2/3)O₃ (BPZN; x = 0.06–0.1) relaxor ferroelectric ceramics produced using a reaction-sintering process were investigated. Without any calcination involved, the mixture of raw materials was pressed and sintered directly. BPZN ceramics of 100% perovskite phase were obtained. Highly dense BPZN ceramics with a density higher than 98.5% of theoretical density could be obtained. Maximum dielectric constant K_max 13,500 (at 75 °C), 19,600 (at 50 °C) and 14,800 (at 28 °C) at 1 kHz could be obtained in 6BPZN, 8BPZN and 10BPZN, respectively. Dielectric maximum temperature (T_max) in BPZN ceramics via reaction-sintering process is lower than BPZN ceramics prepared via B-site precursor route.     

Compositional dependence of phase structure and electrical properties in (K0.50Na0.50)0.97Bi0.01(Nb1−xZrx)O3 lead-free ceramics

(K_0.50Na_0.50)_0.97Bi_0.01(Nb_1-xZr_x)O₃ (KNBNZ) lead-free ceramics were prepared by the conventional solid-state sintering process. Their phase structure is dependent on the Zr content in the investigated range, and the ceramics endure a phase transition from pseudocubic to orthorhombic with increasing Zr content. Improved piezoelectric properties have been observed when the poling temperature is located at ~100 °C because of the coexistence of orthorhombic and tetragonal phases. Their dielectric and piezoelectric properties were enhanced by doping Zr, the ceramic with x=0.02 showing optimal electrical properties, i.e., d₃₃~161 pC/N, k_p~0.41, Q_m~81, T_c~370 °C, and T_o−t~130 °C. These results show that the KNBNZ ceramic is a promising lead-free piezoelectric material.     

Soft template synthesis of mesoporous Co3O4/RuO2·xH2O composites for electrochemical capacitors

Co₃O₄/RuO₂·xH₂O composites with various Ru content (molar content of Ru = 5%, 10%, 20%, 50%) were synthesized by one-step co-precipitation method. The precursors were prepared via adjusting pH of the mixed aqueous solutions of Co(NO₃)₂·6H₂O and RuCl₃·0.5H₂O by using Pluronic123 as a soft template. For the composite with molar ratio of Co:Ru = 1:1 annealed at 200 °C, Brunauer-Emmet-Teller (BET) results indicated that the composite showed mesoporous structure, and the specific surface area of the composite was as high as 107 m² g⁻¹. The electrochemical performances of these composites were measured in 1 M KOH electrolyte. Compared with the composite prepared without template, the composite with P123 exhibited a higher specific capacitance. When the molar content of Ru was rising, the specific capacitance of the composites increased significantly. It was also observed that the crystalline structures as well as the electrochemical activities were strongly dependent on the annealing temperature. A capacitance of 642 F/g was obtained for the composite (Co:Ru = 1:1) annealed at 150 °C. Meanwhile, the composites also exhibited good cycle stability. Besides, the morphologies and textural characteristic of the samples were also investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM).     

Structural and electrical properties of four-layers Aurivillius phase BaBi3.5Nd0.5Ti4O15 ceramics

A new compound of barium bismuth neodymium titanate BaBi_3.5Nd_0.5Ti₄O₁₅ was synthesized using the traditional solid-state reaction method. X-ray diffraction analysis confirmed the compound to be a layered tetragonal structure and Raman spectrum indicated that Nd ions occupy the A site. The plate-like morphology with average grain size about 2–4 μm was observed by a scanning electron microscope (SEM). A precision impedance analyzer was used to measure the dielectric properties and impedance spectroscopy of the ceramics. The results show that the temperature of dielectric constant maximum (T_m), the room temperature dielectric constant (ε_r) and loss (tan δ) at 100 kHz are 287° C, 326 and 0.017, respectively. The modified Curie–Weiss law was used to describe the relaxor behavior of the ceramics which was attributed to the A site cationic disorder. The remnant polarization (2P_r) of the sample was observed to be 1.27 μC/cm² at room temperature.     

Thermal conductivity in mullite/ZrO2 composite coatings

Mullite-based multilayered structures have been suggested as promising environmental barrier coatings for Si₃N₄ and SiC ceramics. Mullite has been used as bottom layer because its thermal expansion coefficient closely matches those of the Si-based substrates, whereas Y–ZrO₂ has been tried as top layer due to its stability in combustion environments. In addition, mullite/ZrO₂ compositions may work as middle layers to reduce the thermal expansion coefficient mismatch between the ZrO₂ and mullite layers. Present work studies the thermal behaviour of a flame sprayed mullite/ZrO₂ (75/25, v/v) composite coating. The changes in crystallinity, microstructure and thermal conductivity of free-standing coatings heat treated at two different temperatures (1000 and 1300 °C) are comparatively discussed. The as-sprayed and 1000 °C treated coatings showed an almost constant thermal conductivity (K) of 1.5 W m⁻¹ K⁻¹. The K of the 1300 °C treated specimen increased up to twice due to the extensive mullite crystallization without any cracking.     

Preparation and microwave dielectric properties of 3ZnO·B2O3 ceramics with low sintering temperature

The preparation and dielectric properties of 3ZnO·B₂O₃ ceramics were investigated. Dense 3ZnO·B₂O₃ ceramics were obtained as sintered in the temperature range from 950 to 1000 °C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO·B₂O₃ structure. The ceramic specimens fired at 955 °C for 1 h exhibited excellent microwave dielectric properties: ?_r ∼ 6.9, Q × f ∼ 20,647 GHz (@6.35 GHz), and τ_f ∼ −80 ppm/°C. The dependences of relative density, ?_r, and Q × f of ceramics sintered at 955 °C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO·B₂O₃ ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate.     

Enhanced piezoelectric properties of (K0.40Na0.60)0.94Li0.06Nb0.94SbO3 lead-free ceramics by optimizing the sintering temperature

Effects of sintering temperature on the microstructure and electrical properties of (K_0.40Na_0.60)_0.94Li_0.06Nb_0.94SbO₃ (KNLNS) lead-free ceramics are investigated. The grain size gradually becomes larger with increasing sintering temperature from 1055 °C to 1105 °C, and the piezoelectric property could be enhanced by optimizing their sintering temperature. The ceramic sintered at 1075 °C has optimum electrical properties, i.e., d₃₃~272 pC/N, k_p~43.5%, ε_r~1152, tan δ~0.026, and T_C~346 °C. These results show that the sintering temperature can optimize electrical properties of KNLNS ceramics.     

Sintering of glass-added BaZn1/3Nb2/3O3 ceramics

The complex perovskite oxide Ba(Zn_1/3Nb_2/3)O₃ (BZN) has been studied for its attractive dielectric properties which place this material interesting for applications as multilayer ceramics capacitors or hyperfrequency resonators. This material is sinterable at low temperature with combined glass phase–lithium salt additions, and exhibits, at 1 MHz very low dielectric losses combined with relatively high dielectric constant and a good stability of this later versus temperature. The 2 wt.% of ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of LiF-added BZN sample sintered at 900 °C exhibits a relative density higher than 95% and attractive dielectric properties: a dielectric constant ?_r of 39, low dielectrics losses (tan(δ) < 10⁻³) and a temperature coefficient of permittivity τ_? of 45 ppm/°C⁻¹. The 2 wt.% ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of B₂O₃-added BZN sintered at 930 °C exhibits also attractive dielectric properties (?_r = 38, tan(δ) < 10⁻³) and it is more interesting in terms of temperature coefficient of the permittivity (τ_? = −5 ppm/°C). Their good dielectric properties and their compatibility with Ag electrodes, make these ceramics suitable for L.T.C.C applications.     

Transparent polycrystalline MgAl2O4 ceramic fabricated by spark plasma sintering: Microwave dielectric and optical properties

The optical properties and microwave dielectric properties of transparent polycrystalline MgAl₂O₄ ceramics sintered by spark plasma sintering (SPS) through homemade nanosized MgAl₂O₄ powders at temperatures between 1250 °C and 1375 °C are discussed. The results indicate that, with increasing sintering temperatures, grain growth and densification occurred up to 1275 °C, and above 1350 °C, rapid grain and pore growth occurred. The in-line light transmission increases with the densification and decreases with the grain/pore growth, which can be as high as 70% at the wavelength of 550 nm and 82% at the wavelength of 2000 nm, respectively. As the sintering temperature increases, Q×f and dielectric constant ε_r values increase to maximum and then decrease respectively, while τ_f value is almost independent of the sintering temperatures and remains between −77 and −71 ppm/°C. The optimal microwave dielectric properties (ε_r=8.38, Q×f=54,000 GHz and τ_f=−74 ppm/°C) are achieved for transparent MgAl₂O₄ ceramics produced by spark plasma sintering at 1325 °C for 20 min.     

Sintering,microstructure and conductivity of La2NiO4+δ ceramic

Microstructure and electrical conducting properties of La₂NiO_4+δ ceramic were investigated in the sintering temperature range 1200–1400 °C. The results demonstrate that the microstructure and electrical conducting properties of La₂NiO_4+δ ceramic are sensitive to sintering temperature. Compared with a progressive densification development with sintering temperature from 1200 to 1300 °C along with an insignificant change in grain size, there is an exaggerated grain growth in the specimens sintered at higher temperatures. Increasing sintering temperature from 1200 to 1300 °C resulted in an enhancement of electrical conducting properties. Further increase of sintering temperature exceeding 1300 °C reduced the electrical conducting properties. A close relation between the microstructure and electrical conducting properties was suggested for La₂NiO_4+δ ceramic. With respect to the electrical conducting properties, the preferred sintering temperature of La₂NiO_4+δ ceramic was ascertained to be 1300 °C. The specimen sintered at 1300 °C exhibits a generally uniform microstructure together with electrical conductivities of 76–95 S cm⁻¹ at 600–800 °C.     

Studies on electrical properties of La0.8Sr0.2Ga0.8Mg0.2O2.80 (LSGM) and LSGM-SrSn1−xFexO3 (x = 0.8; 0.9) composites and their chemical reactivity

We report the electrical conductivity properties of solid-state synthesized perovskite-like La_0.8Sr_0.2Ga_0.8Mg_0.2O_2.80 (LSGM) and LSGM-SrSn_1−xFe_xO₃ (x = 0.8; 0.9) composites. LSGM exhibits both bulk and grain-boundary contribution in the ac impedance plots. The grain-boundary conductivity (σ_gb) is slightly (≤half-order of magnitude) higher than that of the bulk oxide ion conductivity (σ_bulk). Powder XRD study reveals that no chemical reaction occurs between LSGM and SrSn_1−xFe_xO₃ (1:1 wt.%) at 1000 °C (48 h) and forms a single-phase perovskite-like compound at 1300 °C (48 h) in air, while in hydrogen atmosphere, at 800 °C for 48 h, a growth of LaSrGaO₄ and LaSrGa₃O₇ impurity phases and formation of metallic Fe was observed. The LSGM-SrSn_1−xFe_xO₃ (x = 0.8; 0.9) composites show a single or part of semicircle in air at low-temperature regime. The electrical conductivity of the composites were found to be much higher compared to pure LSGM and lower about an order of magnitude than those of pure Sn-doped SrFeO₃ perovskite.     

Densification, microstructural evolution and microwave dielectric properties of fluxed sintered 12R-Ba(Ti0.5Mn0.5)O3 ceramics

Doped hexagonal BaTiO₃ (h-BaTiO₃) ceramics have recently been identified as potential candidates for use in microwave dielectric resonators. However, similar to other common microwave ceramics, doped h-BaTiO₃ ceramics require a sintering temperature higher than 1400 °C. In this study, the effects of Bi₂O₃ and Li₂CO₃ on the densification, microstructural evolution and microwave properties of hexagonal 12R-Ba(Ti_0.5Mn_0.5)O₃ ceramics were examined. Results indicate that Bi₂O₃ and Li₂CO₃ are able to effectively reduce the sintering temperature of 12R-Ba(Ti₀₅Mn_0.5)O₃ ceramics through liquid phase sintering while retaining the hexagonal structure and the microwave dielectric properties. The best results were obtained for the 12R-Ba(Ti_0.5Mn_0.5)O₃ with the additions of 5 wt% Bi₂O₃ sintered at 1200 °C (?_r: 36.0, Qf_r: 6779 GHz, and τ_f: 25.3 ppm/°C), and 5 wt% Li₂CO₃ sintered at 1200 °C (?_r: 28.1, Qf_r: 5304 GHz, and τ_f: 35.3 ppm/°C).     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Influence of A-site Ba substitution on microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)O3 (A=Zr,Sn) ceramics

The microwave dielectric properties of (Ba_xMg_1−x)(A_0.05Ti_0.95)TiO₃ (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τ_f value increased, but the Q×f value decreased. The sintered (Ba_xMg_1−x)(Zr_0.05Ti_0.95)TiO₃ (called B_xMZT) ceramics had a permittivity in the range of 19.1−20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from −35 to −39 ppm/°C with increasing composition x. For sintered (Ba_xMg_1−x)(Sn_0.05Ti_0.95)TiO₃ (called B_xMST) ceramics, the dielectric constant increased from 19 to 20.5, Q×f value increased from 120,000 to 37,000 (GHz), and the τ_f value increased from −50 to −3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba_0.1Mg_0.9)(Sn_0.05Ti_0.95)TiO₃ ceramics exhibited dielectric constant of 20.5, Q×f value of 37,000 (GHz), and a near-zero τ_f value of −3.3 ppm/°C sintered at 1210 °C for 4 h.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Microstructural variation and dielectric properties of KTiNbO5 and K3Ti5NbO14 ceramics

KTiNbO₅ (KTN) and K₃Ti₅NbO₁₄ (3K5TN) ceramics sintered at 1150 °C and 1125 °C, respectively, exhibited a dense, homogeneous microstructure with a high relative density (≥96% of the theoretical density). Abnormal grain growth occurred in both specimens during sintering, and large (002) and (001) grains developed in KTN and 3K5TN ceramics, respectively. A dielectric constant (ε_r) of 13 and a dielectric loss of 2.9% at 10 MHz were obtained from KTN ceramics sintered at 1150 °C. The 3K5TN ceramics sintered at 1125 °C showed an ε_r of 15 and a dielectric loss of 12% at 10 MHz. The resistivity of KTN and 3K5TN ceramics was low and their ε_r and dielectric loss values displayed low-frequency dispersion (LFD); the presence of K⁺ ions between the layers could be responsible for their low resistivity and LFD.