Influence of ZnO buffer layer on AZO film properties by radio frequency magnetron sputtering

Transparent conductive films of Al-doped zinc oxide (AZO) were deposited on glass substrates under various ZnO buffer layer deposition conditions (radio frequency (r.f.) power, sputtering pressure, thickness, and annealing) using r.f. magnetron sputtering at room temperature. This work investigates the influence of ZnO buffer layer on structural, electrical, and optical properties of AZO films. The use of grey-based Taguchi method to determine the ZnO buffer layer deposition processing parameters by considering multiple performance characteristics has been reported. Findings show that the ZnO buffer layer improves the optoelectronic performances of AZO films. The AZO films deposited on the 150-nm thick ZnO buffer layer exhibit a very smooth surface with excellent optical properties. Highly c-axis-orientated AZO/ZnO/glass films were grown. Under the optimized ZnO buffer layer deposition conditions, the AZO films show lowest electrical resistivity of 6.75 × 10⁻⁴ Ω cm, about 85% optical transmittance in the visible region, and the best surface roughness of R_a = 0.933 nm.     

Influence of N2/Ar gas mixture ratio and annealing on optical properties of SiCBN thin films prepared by rf sputtering

Optical properties of amorphous thin films of silicon carbon boron nitride (Si–C–B–N) obtained by reactive sputtering has been studied. Compositional variations were obtained by changing the nitrogen and argon gas mixture ratio in the sputtering ambient. The effect of gas ratios and annealing on the optical properties was investigated. It was found that the transmittance of the films increases with nitrogen incorporation. Annealing at higher temperatures leads to considerable increase in transmittance. Optical energy gap (Tauc gap) calculated from absorption data is influenced by annealing temperatures and reactive process gas mixture. Changes in optical properties were correlated to the chemical modifications in the films due to annealing, through X-ray photoelectron spectroscopy. Studies reveal that the carbon and nitrogen concentrations in the films are highly sensitive to temperature. Annealing at higher temperatures leads to broken C–N bonds which results in the loss of C and N in the films. This is believed to be the primary cause for variations in optical properties of the films.     

Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

In this study, gallium oxide (Ga₂O₃) thin films were deposited on sapphire and n-Si substrates using Ga₂O₃ target by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 °C at variable RF power and deposition pressure. The effects of deposition pressure and growth power on crystalline structure, morphology, transmittance, refractive index and band gap energy were investigated in detail. X-ray diffraction results showed that amorphous phase was observed in all the as-deposited thin films except for the thin films grown at low growth pressure. All the films showed conversion to poly-crystal β-Ga₂O₃ phase after annealing process. When the deposition pressure increased from 7.5 mTorr to 12.20 mTorr, change in the 2D growth mode to 3D columnar growth mode was observed from the SEM images. Annealing clearly showed formation of larger grains for all the thin films. Lower transmission values were observed as the growth pressure increases. Annealing caused to obtain similar transmittance values for the thin films grown at different pressures. It was found that a red shift observed in the absorption edges and the energy band gap values decrease with increasing growth pressure. For as-deposited and annealing films, increasing sputtering power resulted in the increase refractive index.     

Effect of substrate temperature on the structural,electrical, and optical properties of GZO/ZnO films deposited by radio frequency magnetron sputtering

Ga-doped ZnO (GZO)/ZnO bi-layered films were deposited on glass substrates by radio frequency magnetron sputtering at different substrate temperatures of 100, 200 and 300 °C to investigate the effects of substrate temperature on the structural, electrical, and optical properties of the films. Thicknesses of the GZO and ZnO buffer layer were kept constant at 85 and 15 nm by controlling the deposition times.     

Influence of a Ni interlayer on the optical and electrical properties of trilayer GZO/Ni/GZO films

Trilayer GZO/Ni/GZO films were deposited onto polycarbonate (PC) substrates with RF and DC magnetron sputtering, and then the influence of a Ni interlayer on the optical and electrical properties of the films was investigated. A 2-nm-thick Ni interlayer decreased the resistivity to 6.4×10⁻⁴ Ω cm and influenced the optical transmittance.Although optical transmittance deteriorated with Ni insertion, the films showed a relatively high optical transmittance of 74.5% in the visible wavelength region. The figure of merit (FOM) of a GZO single layer film was 1.2×10⁻⁴ Ω⁻¹, while that of the GZO/Ni/GZO films reached a maximum of 8.2×10⁻⁴ Ω⁻¹.Since a higher FOM results in higher quality transparent-conductive oxide (TCO) films, it is concluded that GZO films with a 2 nm Ni interlayer have better optoelectrical performance than single-layer GZO films.     

Electrical properties of annealed MPCVD grown vertically aligned carbon nanotube films

Vertically aligned multiwalled carbon nanotubes (MWNTs) were grown on silicon substrate at a low temperature (<520 °C) using microwave plasma-enhanced chemical vapor deposition (MPCVD). From the Raman spectra, it was found that the I_D/I_G ratio of MWNTs decreased after annealing, indicating that more graphenes were formed by the annealing process. Nevertheless, a strong Si signal was found in Raman spectra after annealing at a high-temperature (600 °C). From X-ray photoelectron spectroscopy (XPS) analysis it was observed that the ratio of the oxygen to carbon (O/C) signal intensity was from 0.15 to 1.88 for the increasing annealed temperatures of MWNTs, and a Si signal was found nearby the surface of MWNTs after annealing at 600 °C. Moreover, from the I–V measurement, the less symmetric I–V characteristic was found for the metal/MWNTs/metal (MIM) sandwich structure of unannealed MWNTs. After 300 °C annealing process, the positive current was increase and the negative current was decrease. It was conjectured that the MWNTs could obtain more graphenes structure by the 300 °C annealing process. Moreover, the I–V trace of the sample annealed by 600 °C exhibited rapid current descent, indicating the oxygenated and partly silicided phenomena might cover outer graphite layer of MWNTs. The equivalent circuit for the MIM sandwich structure could be represented as two Schottky barrier diodes in a back-to-back configuration. From the data fitting, it was found that the Schottky barrier height (_B0) decreased and the current density (J) increased from unannealing to 300 °C annealing temperature. However, the Schottky barrier height (_B0) was increased from 300 to 600 °C annealing temperature. Comparison with the XPS, this may due to the oxygenated and partly silicided phenomenon on the surface of the MWNTs.     

Influence of postdeposition annealing on the properties of ZnO films prepared by RF magnetron sputtering

ZnO films were prepared on unheated silicon substrate by RF magnetron sputtering technique. Postdeposition annealing of ZnO films in vacuum were found to improve film structure and electrical characteristics, such as dense structure, smooth surface, stress relief and increasing resistivity. Suitable annealing temperature also reduced loss factor. The correlation between annealing conditions and the physical structure of the films (crystalline structure and microstructure) was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The preferred annealing condition has been found to improve ZnO film characteristics for piezoelectric applications. An over-mode acoustic resonator using the ZnO film after annealing at 400 °C in vacuum circumstance for 1 h showed a large return loss of 42 dB at the center frequency of 1.957 GHz.     

Effects of the annealing atmosphere on the microstructure and properties of BiFe0.99Zn0.01O3 films

BiFe_0.99Zn_0.01O₃ (BFZO) films were annealed in different atmospheres (Air, N₂ and O₂) on ITO/glass substrates. The influences of the different annealing atmospheres on the oxygen vacancy concentration, microstructure, ferroelectric behavior, leakage current, leakage mechanism, aging and dielectric performance of the BFZO films were studied. The crystallization and grain development for the sample annealed in an O₂ atmosphere improved, and the concentrations of the Fe²⁺ and oxygen vacancies were the lowest among the samples studied herein. The BFZO film had the lowest leakage current density and the best ferroelectric performance in an O₂ annealing atmosphere among the samples studied herein, and the leakage was due to the F-N tunneling effect mechanism. From the perspective of the volume effect, the aging model was established, and the aging mechanism of the BFZO films was discussed in depth. Compared with Air and N₂, the annealed film in O₂ exhibited no obvious aging.     

Nitrogen and oxygen annealing effects on properties of aluminum-gallium oxide films grown by pulsed laser deposition

Aluminum-gallium oxide (AGO) films on c-plane sapphire substrates by pulsed laser deposition are described. Both nitrogen and oxygen annealing effects on the structural and optical properties of AGO films are investigated. The AGO film shows an amorphous structure when deposited at low temperatures (≤400 °C) while a crystalline structure at 800 °C. After post annealing at 900 °C, an amorphous-to-crystalline phase transformation for the 400°C-deposited film occurs and shows the preferred β phase. The corresponding optical bandgap also increases from 5.14 eV to 5.41–5.46 eV depending on the annealing ambience. From Raman measurements, the 800°C-deposited AGO sample possesses a more stable O–Ga–O bonding compared to that of the 400°C-deposited one after annealing. Unusually, an evident increase in the nitrogen content is observed for the samples after post annealing at 900 °C in nitrogen atmosphere. The rapid dissociation of oxygen atoms may accelerate the disintegration of crystals and rearrangement, which makes the AGO film adsorb nitrogen atoms and cause the grain size to be significantly reduced. However, the extent of the nitrogen incorporation seems to have no apparent effect on the optical properties. All the AGO films show the optical transmittance over 80% in the ultraviolet–visible region with the calculated bandgaps more than 5.4 eV. Details of the mechanism about the nitrogen incorporation into the annealed AGO films via the oxygen vacancies or micro-pores will be discussed.     

Si-rich Al2O3 films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment

Silicon-rich Al₂O₃ films (Si_x(Al₂O₃)_1−x) were co-sputtered from two separate silicon and alumina targets onto a long silicon oxide substrate. The effects of different annealing treatments on the structure and light emission of the films versus x were investigated by means of spectroscopic ellipsometry, X-ray diffraction, micro-Raman scattering, and micro-photoluminescence (PL) methods. The formation of amorphous Si clusters upon the deposition process was found for the films with x ≥ 0.38. The annealing treatment of the films at 1,050°C to 1,150°C results in formation of Si nanocrystallites (Si-ncs). It was observed that their size depends on the type of this treatment. The conventional annealing at 1,150°C for 30 min of the samples with x = 0.5 to 0.68 leads to the formation of Si-ncs with the mean size of about 14 nm, whereas rapid thermal annealing of similar samples at 1,050°C for 1 min showed the presence of Si-ncs with sizes of about 5 nm. Two main broad PL bands were observed in the 500- to 900-nm spectral range with peak positions at 575 to 600 nm and 700 to 750 nm accompanied by near-infrared tail. The low-temperature measurement revealed that the intensity of the main PL band did not change with cooling contrary to the behavior expected for quantum confined Si-ncs. Based on the analysis of PL spectrum, it is supposed that the near-infrared PL component originates from the exciton recombination in the Si-ncs. However, the most intense emission in the visible spectral range is due to either defects in matrix or electron states at the Si-nc/matrix interface.     

Improved physical properties of Al-doped ZnO thin films deposited by unbalanced RF magnetron sputtering

Room temperature Al-doped ZnO (AZO) thin films with improved crystalline and optical properties were grown on normal glass substrates using unbalanced RF magnetron sputtering technique. To modify the plasma density towards the substrate and enhance the crystalline nature, an additional magnetic field ranging from 0 to 6.0 mT has been applied to the AZO target by proper tuning of solenoid coil current from 0 to 0.2 A respectively, which plays a significant role for controlling the physical properties of AZO films. The results from XRD studies indicate that all AZO films were composed of hexagonal wurtzite structure with better crystal quality through the applied magnetic field, ZnO (002) plane as a preferred growth. Furthermore, XPS studies suggested that symmetric chemical shifts in the binding energies for the Zn 2p and O1s levels with applied magnetic field. SEM analysis revealed the formation of a smooth, homogeneous and dense morphological surface with applied magnetic field. From AFM analysis, it was observed that the applied magnetic field strongly influenced the grain size and the films showed decreasing tendency in electrical resistivity. Films exhibited superior optical transmittance more than 94% in the visible region essentially due to the formation of better crystalline nature. The results indicate that improved band gap from 3.10 to 3.15 eV with additional magnetic field varied from 0 to 6.0 mT respectively.     

Effect of deposition parameters on properties of TiO2 films deposited by reactive magnetron sputtering

TiO₂ films were grown onto unheated 5083 aluminum alloy substrates by reactive magnetron sputtering from a pure Ti target in Ar-O₂ gas mixture in different power, bias voltage, Ar/O₂ ratio and deposition time at room temperature. The effects of different deposition parameters on the structure and properties of TiO₂ films were investigated systematically by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), nanoindentation tests, electrochemical tests and antibacterial tests. The results show that power and bias voltage are two main factors to affect the structure and properties of TiO₂ films during the sputtering process. XRD results show that anatase phase is the main phase of the film, and the enhanced content of anatase phase with the increase of sputtering power and bias voltage. Nanoindentation tests exhibit that higher H/E (Hardness/Modulus) ratio can be achieved by depositing TiO₂ film. And the corrosion resistance and antifouling property are all improved after depositing TiO₂ film. 2# sample shows the optimal corrosion resistance, E_corr and I_corr are −0.27388 V and 3.7232 μA/cm², respectively. 1# sample exhibits excellent antibacterial property, the d ensity of bacteria is only 217 cell / mm², which is 484% higher than that of uncoated matrix.     

Multi-response optimization of mechanical properties for ZrWN films grown using grey Taguchi approach

ZrWN nitride films are prepared using direct current (dc) reactive magnetron sputtering. Grey Taguchi analysis is used to determine the effect of deposition parameters (substrate plasma etching time, N₂/(N₂+Ar) flow rates, deposition time, and substrate temperature) on the microstructure and the tribological properties. An orthogonal array, signal-to-noise ratio and analysis of variance are used to determine the effects of deposition parameters. The substrates are pretreated using oxygen plasma etching. The resulting ZrWN coatings are homogeneous, very compact and completely adhered to the substrate. In the confirmation runs, using grey Taguchi analysis, the coefficient of friction decreases from 0.45?±?0.02 to 0.35?±?0.02, the corrosion potential increases from ??0.201?±?0.01 to ??0.072?±?0.01?V, the Vickers hardness increases from 23.63?±?0.07 to 24.65?±?0.05?GPa, and reduced modulus increases from 115.82?±?1.13 to 136.17?±?1.18?GPa. The ZrWN films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rockwell C indentation and scratch testing. The TEM pattern for the ZrWN films corresponds to the (111), (200) and (220) planes of the face center cubic structure. Samples with a ZrWN film coating are classified as HF1 and exhibit good adhesive strength. The signal of friction and the associated acoustic emission signal are analyzed, and the scratch profile is analyzed using an optical microscope. Results show that the adhesive force for the critical load Lc2 is about 76.2?±?0.5?N.     

Microwave dielectric properties of the BaTi5O11 thin film grown on the poly-Si substrate using rf magnetron sputtering

BaTi₅O₁₁ thin films were grown on the poly-Si/SiO₂/Si substrate using rf magnetron sputtering. The BaO-TiO₂ thin film deposited on the poly-Si substrate had an amorphous phase even though the growth temperature was high at 550 °C. The amorphous film was crystallized into the BaTi₅O₁₁ phase when the film was post annealed above 800 °C. The post annealing temperature is one of the most important factors for the formation of the crystalline BaTi₅O₁₁ thin film. The homogeneous BaTi₅O₁₁ thin film was obtained when the film was grown at 550 °C and rapid thermal annealed (RTA) at 900 °C for 3 min. The dielectric constant (ɛ_r) of the BaTi₅O₁₁ film measured at 100 kHz was about 35 and the dissipation factors of all the films were smaller than 4.0%. The dielectric properties of the BaTi₅O₁₁ thin film were also measured at microwave frequencies. For the BaTi₅O₁₁ thin film grown at 550 °C and RTA at 900 °C for 3 min, the ɛ_r of 34–30 and dielectric loss of 0.025 ± 0.005 were obtained at 1–6 GHz.     

Influence of radio frequency magnetron sputtering parameters on the structure and performance of SiC films

Amorphous SiC films fabricated by Radio frequency (RF) magnetron sputtering have been widely used due to their excellent properties including high strength, good hardness and outstanding abrasion resistance. However, most researches set a lower target-substrate distance, which limits its large-scale coating for practical industrial application. In this work, the distance between the target and substrate was enlarged to 120 mm, and the effective coating area was about four to ten times than other researches. Furthermore, the effects of sputtering power, deposition pressure, substrate temperature and bias voltage on the structure and performance of SiC films were also investigated. Finally, SiC films with high elasticity modulus (310.8 GPa) and hardness (35.6 GPa) are obtained by RF magnetron sputtering.     

Effect of rapid thermal annealing on the properties of zinc tin oxide films prepared by plasma-enhanced atomic layer deposition

The effect of rapid thermal annealing treatments on the microstructure, surface morphology, and optical characteristics of zinc tin oxide (ZTO) films produced by plasma-enhanced atomic layer deposition was investigated. The ZTO films were annealed in oxygen atmosphere for 2 min at four selected temperatures from 500 to 800 °C. The X-ray diffraction showed that the annealing temperature has a great influence on the crystalline characteristics of ZTO films. The film shows complete amorphous structure for as-deposited ZTO film. Meanwhile, the spinel zinc stannate Zn₂SnO₄ was obtained for the samples annealed from 500 to 800 °C, which shows polycrystalline nature. The X-ray photoelectron spectroscopy proved that the annealing process in oxygen gas can effectively can reduce the oxygen vacancy defects in the films. In addition, the photoluminescence spectroscopy manifests an ultraviolet emission with a broad peak range from 345 to 385 nm. Moreover, the ultraviolet luminescence intensity increases continuously with the increase of annealing temperature. Spectroscopic ellipsometry analyses demonstrate that the refractive index of annealed films increases as the increase of annealing temperature, while the extinction coefficient decreases gradually with the increase of annealing temperature in the visible light range.     

Influence of annealing atmosphere on the structure, resistivity and transmittance of InZnO thin films

Dependence of the electrical and optical properties of In₂O₃–10 wt% ZnO (IZO) thin films deposited on glass substrates by RF magnetron sputtering on the annealing atmosphere was investigated. The electrical resistivities of indium zinc oxide (IZO) thin films deposited on glass substrate can be effectively decreased by annealing in an N₂ + 10% H₂ atmosphere. Higher temperature (200 °C) annealing is more effective in decreasing the electrical resistivity than lower temperature (100 °C) annealing. The lowest resistivity of 6.2 × 10⁻⁴ Ω cm was obtained by annealing at 200 °C in an N₂ + 10% H₂ atmosphere. In contrast, the resistivity was increased by annealing in an oxygen atmosphere. The transmittance of IZO films is improved by annealing regardless of the annealing temperature.     

Effect of annealing on structure and properties of Ta–O–N films prepared by high power impulse magnetron sputtering

High power impulse magnetron sputtering of a Ta target in various $\mathrm{Ar}+{\mathrm{O}}_2+{\mathrm{N}}_2$ gas mixtures was utilized to prepare amorphous tantalum oxynitride (Ta–O–N) films with a finely controlled elemental composition in a wide range. We investigate the effect of film annealing at $900°\mathrm{C}$ in vacuum on structure and properties of the films. We show that the finely tuned elemental composition in combination with the annealing enables the preparation of crystalline Ta–O–N films exhibiting a single TaON phase with a monoclinic lattice structure, refractive index of $2.65$ and extinction coefficient of $2.0\times {10}^2$ (both at the wavelength of $550\mathrm{nm}$), optical band gap width of $2.45\mathrm{eV}$ (suitable for visible light absorption up to $505\mathrm{nm}$), low electrical resistivity of $0.4\text{Ω}\mathrm{cm}$ (indicating enhanced charge transport in the material as compared to the as-deposited counterpart), and appropriate alignment of the band gap with respect to the redox potentials for water splitting. These films are therefore promising candidates for application as visible-light-driven photocatalysts for water splitting.     

Microstructure,mechanical and tribological properties of TaCN composite films by reactive magnetron sputtering

In this paper, a series of TaCN composite films with different carbon content were deposited by the magnetron sputtering system and the microstructure, mechanical and tribological properties were investigated. The results showed that the deposited TaCN films exhibited a three-phase of face-centered cubic (fcc) Ta(C,N), hexagonal closed-packed (hcp) Ta(C,N) and amorphous CNx. With the increase of carbon content, the hardness of the TaCN films first increased and then decreased, after reaching a maximum of 33.1 GPa; the adhesion strength increased gradually; the coefficient of friction decreased monotonically and the wear property initially improved and then weakened at room temperature. The coefficient of friction of the TaCN film at 28.21 at.% carbon decreased first, then increased and then decreased again and its high-temperature wear rate first decreased slightly and then increased, as the temperature increased from room temperature (RT) to 600 °C. The TaCN film at 28.21 at.% carbon exhibited excellent an elevated-temperature tribological properties.