Temperature-stable dielectric ceramics based on Na0.5Bi0.5TiO3

Multiple ion substitutions to Na_0.5Bi_0.5TiO₃ give rise to favourable dielectric properties over the technologically important temperature range ?55?°C to 300?°C. A relative permittivity, ε_r,?=?1300?±?15% was recorded, with low loss tangent, tanδ?≤?0.025, for temperatures from 310?°C to 0?°C, tanδ increasing to 0.05 at ?55?°C (1?kHz) in the targeted solid solution (1–x)[0.85Na_0.5Bi_0.5TiO₃–0.15Ba_0.8Ca_0.2Ti_1-yZr_yO₃]–xNaNbO₃: x?=?0.3, y?=?0.2. The ε_r-T plots for NaNbO₃ contents x?<?0.2 exhibited a frequency-dependent inflection below the temperature of a broad dielectric peak. Higher levels of niobate substitution resulted in a single peak with frequency dispersion, typical of a normal relaxor ferroelectric. Experimental trends in properties suggest that the dielectric inflection is the true relaxor dielectric peak and appears as an inflection due to overlap with an independent broad dielectric peak. Process-related cation and oxygen vacancies and their possible contributions to dielectric properties are discussed.     

High temperature dielectrics in the ceramic system K0.5Bi0.5TiO3-Ba(Zr0.2Ti0.8)O3-Bi(Zn2/3Nb1/3)O3

Ceramics in the system (1-x)[0.5K_0.5Bi_0.5TiO₃-0.5Ba(Zr_0.2Ti_0.8)O₃]-xBi(Zn_2/3Nb_1/3)O₃ have been fabricated by a solid-state processing route for compositions x≤0.3. The materials are relaxor dielectrics. The temperature of maximum relative permittivity, T_m, decreased from 150 °C for composition x=0, to 70 °C for x=0.2. The x=0.2 sample displayed a wide temperature range of stable relative permittivity, ε_r, such that ε_r=805±15% from −20 to 600 °C (1 kHz). Dielectric loss tangent was ≤0.02 from 50 °C to 450 °C (1 kHz), but due to the tanδ dispersion peak, the value increased to 0.09 as temperatures fell from 50 °C to −20 °C. Values of dc resistivity were of the order of ~10⁹ Ω m at 300 °C. These properties are promising in the context of developing new high temperature capacitor materials.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Bi0.5Na0.5TiO3-BaTiO3-CaZrO3:ZnO high-temperature dielectric composites with wide operational range

0.82[0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃]-0.18CaZrO₃:xZnO (BNT-BT-CZ:xZnO, x = 0–0.40 with interval of 0.10) high temperature dielectric composites were prepared and the structural and electrical properties were investigated. Significantly improved temperature-insensitive permittivity spectra have been observed in the composites: the temperature range for low variance in permittivity (Δε_r/ε_r,150?°C < 10%) is 70–190?°C for x?=?0, whereas it is extended at least to 30–250?°C for the optimal x?=?0.10 at 1?kHz. Especially, for this optimal composite, the variance of permittivity is less than 4.0% in the temperature range of 30–400?°C with the suitable permittivity value of ~ 600 at 10?kHz. By comparatively investigating the properties of unpoled and poled samples, the improved temperature-insensitive permittivity is rationalized by the ZnO-induced local electric field that can suppress the evolution of polar nanoregions and thus enhance the temperature-insensitivity of permittivity.     

Temperature‐Stable Relative Permittivity from −70°C to 500°C in (Ba0.8Ca0.2)TiO3–Bi(Mg0.5Ti0.5)O3–NaNbO3 Ceramics

Temperature‐stable relaxor dielectrics have been developed in the solid solution system: 0.45Ba_0.8Ca_0.2TiO₃–(0.55 ? x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃. Ceramics of composition x = 0 have a relative permittivity ?_r = 950 ± 15% over a wide temperature range from +70°C to 600°C. Modification with NaNbO₃ at x = 0.2 decreases the lower limiting temperature to ?70°C, but also decreases relative permittivity such that ?_r ~ 600 ± 15% over the temperature range ?70°C to 500°C. For composition x = 0.3, the low‐temperature dispersion in loss tangent, tan δ, (at 1 kHz) shifts to lower temperature, giving tan δ values ≤0.02 across the temperature range ?60°C to 300°C in combination with ?_r ~ 550 ± 15%. Values of dc resistivity for all samples are of the order of 10¹⁰ Ω m at 250°C and 10⁷ Ω m at 400°C.     

High temperature stable dielectric properties and enhanced energy-storage performance of (1− x)(0.85Na0.5Bi0.5TiO3 − 0.15Ba0.8Ca0.2Ti0.8Zr0.2O3)− xK0.5Na0.5NbO3 lead-free ceramics

Novel high temperature ceramic capacitors (1??x)(Na_0.5Bi_0.5TiO₃ ??0.15Ba_0.8Ca_0.2Ti_0.8Zr_0.2O₃)??xK_0.5Na_0.5NbO₃ were synthesized in the solid-state reaction route. The influence of K_0.5Na_0.5NbO₃ modification on dielectric behavior, energy-storage properties, ac impedance and temperature stable dielectric performance were systematically investigated. The reduced grain size and enhanced relaxor properties are obtained with the addition of KNN. The content of x?=?0.1 exhibits a stable permittivity (~ 1630) and dielectric loss (<?0.05) over a relatively broad temperature range (66–230?°C). A variation in permittivity within ±?15% can be observed over a pretty wide temperature range of 66–450?°C. Beyond that, this ceramic shows enhanced energy-storage properties with the density (W_rec) of 0.52?J/cm³ and efficiency (η) of 80.3% at 110?kV/cm. The possible contributions of the grain and the grain boundary to the ceramic capacitance are discussed by the ac impedance spectroscopy.     

Stability of High‐Temperature Dielectric Properties for (1 − x)Ba0.8Ca0.2TiO3–xBi(Mg0.5Ti0.5)O3 Ceramics

Ceramics in the solid solution system, (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃, were prepared by a conventional mixed oxide route. Single‐phase perovskite‐type X‐ray diffraction patterns were observed for compositions x < 0.6. A change from tetragonal to single‐phase cubic X‐ray patterns occurred at x ≥ 0.1. Dielectric measurements indicated relaxor behavior for x ≥ 0.1. Increasing the Bi(Mg_0.5Ti_0.5)O₃ content improved the temperature sensitivity of relative permittivity ?_r at high temperatures. At x = 0.5, a near‐plateau relative permittivity, 835 ± 40, extended across the temperature range, 65°C–550°C; the permittivity increased at x = 0.6 to 2170 ± 100 for temperatures 160°C–400°C (1 kHz). The corresponding loss tangent, tanδ, was ≤0.025 for temperatures between 100°C and 430°C for composition x = 0.5; at x = 0.6, losses increased sharply at >300°C. Comparisons of dielectric properties with other materials proposed for high‐temperature capacitor applications suggest that (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃ ceramics are a promising base material for further development.     

Low-temperature preparation and microwave dielectric properties of cold sintered Li2Mg3TiO6 nanocrystalline ceramics

This study aims to fabricate Li₂Mg₃TiO₆ ceramics with ultrafine grains using a novel cold sintering process combined with a post-annealing treatment at a temperature <?950?°C. In this study, phase composition, sintering behavior, microstructure evolution, and microwave dielectric properties of the resultant nanocrystalline ceramics were investigated for the first time. The as-compacted green pellets at 180?°C yielded a high relative density of ~ 90% and the ceramics that were post-sintered over a broad temperature range (800–950?°C) possessed highly dense microstructure with a relative density of ~ 96%. The average grain size varied from 100 to 1200?nm for the samples sintered at 800–950?°C. Furthermore, the quality (Q × f) values of the obtained specimens exhibited a strong positive dependency on the grain size, which increased from 17,790 to 47,960?GHz for grain sizes ranging between 100 and 1200?nm, while the dielectric permittivity (ε_r) and temperature coefficient of the resonant frequency (τ_f) values did not undergo any significant changes over this range of grain size.     

BaTiO3–Bi(Mg2/3Nb1/3)O3 Ceramics for High‐Temperature Capacitor Applications

Solid solutions of (1?x)BaTiO₃–xBi(Mg_2/3Nb_1/3)O₃ (0 ≤ x ≤ 0.6) were prepared via a standard mixed‐oxide solid‐state sintering route and investigated for potential use in high‐temperature capacitor applications. Samples with 0.4 ≤ x ≤ 0.6 showed a temperature independent plateau in permittivity (ε_r). Optimum properties were obtained for x = 0.5 which exhibited a broad and stable relative ε_r ~940 ± 15% from ~25°C to 550°C with a loss tangent <0.025 from 74°C to 455°C. The resistivity of samples increased with increasing Bi(Mg_2/3Nb_1/3)O₃ concentration. The activation energies of the bulk were observed to increase from 1.18 to 2.25 eV with an increase in x from 0 to 0.6. These ceramics exhibited excellent temperature stable dielectric properties and are promising candidates for high‐temperature multilayer ceramic capacitors for automotive applications.     

Study of crystal structure,dielectric, magnetic and magnetoelecrtic properties of xCoFe2O4-(1-x)Na0.5Bi0.5TiO3 composites

Multiferroic composites of spinel ferrite and ferroelectric xCoFe₂O₄ – (1-x)Na_0.5Bi_0.5TiO₃ (with x = 0.10,0.30,0.50) were efficiently prepared by standard solid state reaction mechanism. X-ray diffractometer was used to analyze crystal structure of the prepared composites. The observed XRD patterns of the composites comprise peaks of both the phases i.e. ferrite and ferroelectric, with no sign of secondary peaks. Rietveld refinement of XRD data further confirms the coexistence of these two phases with cubic (Fd3m) and rhombohedral (R3c) symmetry corresponding to ferrite and ferroelectric phase respectively. The 3-dimensional overview of crystal structure of pure CoFe₂O₄ and Na_0.5Bi_0.5TiO₃ and of composite 0.50CoFe₂O₄?0.50Na_0.5Bi_0.5TiO₃ is generated by using refined parameters. The dielectric constant (ε´) and dielectric loss (tanδ) values were recorded as a function of frequency ranging from 100?Hz to 7?MHz and at different temperatures. Both ε´ and tanδ follow dispersion pattern at lower frequencies while show frequency independent behavior at higher frequencies. The magnetic evaluation carried by analyzing M-H hysteresis loop reveals the ferrimagnetic characteristics of these composites. The highest value of magnetic moment is 1.12μ_B observed for composite 0.50CoFe₂O₄ – 0.50Na_0.5Bi_0.5TiO_3. Magnetoelectric (ME) voltage coefficient (α) was also demonstrated to observe the interaction between ferrite and ferroelectric phases. The highest value of α (72.72μV/Oe cm) is obtained for low ferrite composition 0.10CoFe₂O₄ – 0.90Na_0.5Bi_0.5TiO₃, which suggests the dependence of magnetoelectric response on the resistivity of the composites.     

Ultra-stable X9R type CaCu3-xZnxTi4.1O12 ceramics

CaCu_3-xZn_xTi_4.1O₁₂ (x?=?0.00, 0.05 and 0.10) precursor powders were prepared by the polymer pyrolysis (PP) solution method. Ultra-stable X9R type capacitor with very low loss tangent (tanδ) ~0.017 varied within a value of less than 0.05 in a wide temperature range of ?60 to 150?°C and high dielectric constants (ε^′) ~9200 with Δε′ ≤?±?15% in a wide temperature range of ?60 to 210?°C was achieved in CaCu_2.95Zn_0.05Ti_4.1O₁₂ (Zn05-1) ceramic obtained by sintering the precursor powder (x?=?0.05) at 1060?°C for 8?h. A major role for the validity of ε^′ and tanδ in these wider temperature ranges was suggested to originated from the very high grain boundary resistance (R_gb ~413,190?Ω?cm), resulting from the effect of Zn²⁺ doping and TiO₂-rich at grain boundary. With the excellent dielectric properties of (Zn05-1) ceramic, it was suggested to be applied for X8R and X9R capacitors. Interestingly, improvements of nonlinear properties with very high nonlinear coefficient (α ~ 25.94) and breakdown field (E_b~ 3146.25?V.cm^?1) values were achieved in (Zn05-1) ceramic, as well.     

MgTiO3/TiO2/MgTiO3: An ultrahigh-Q and temperature-stable microwave dielectric ceramic through cofired trilayer architecture

A cofired trilayer ceramic architecture showing as MgTiO₃/TiO₂/MgTiO₃ was designed to realize temperature-stable and ultrahigh-Q microwave dielectrics in the typical MgTiO₃-TiO₂ system. The effects of TiO₂ content on the microwave dielectric properties of cofired trilayer ceramics were studied. Through the design of cofired trilayer architecture, the chemical reactions between MgTiO₃ and TiO₂ were limited within a narrow region of MgTiO₃/TiO₂ interfaces (~ 15?µm in width), which could be beneficial for optimizing the microwave dielectric properties. Excellent characteristics of ε_r ~ 18.38, Q×f value ~ 169,900?GHz and τ_f ~ ??1?ppm/°C were gained for the MgTiO₃/TiO₂/MgTiO₃ ceramic architectures stacked with 1.63?vol% TiO₂. The current work could serve as new strategies to develop high-performance dielectric resonators and multilayers for 5G wireless communication applications.     

Effects of (Cr0.5Ta0.5)4+ on structure and microwave dielectric properties of Ca0.61Nd0.26TiO3 ceramics

The Ca_0.61Nd_0.26Ti_1-x(Cr_0.5Ta_0.5)_xO₃ (CNT-CTx) ceramics with orthorhombic perovskite structure were prepared using the conventional solid-state method. The X-ray diffraction (XRD), Raman spectra and X-ray photoelectron spectra (XPS) were employed to investigate the correlations between crystal structure and microwave dielectric properties of CNT-CTx ceramics. The XRD results showed that all CNT-CTx samples were crystallized into the orthorhombic perovskite structure. The SEM micrographs indicated that the average grain size of samples depended on the sintering temperature. As (Cr_0.5Ta_0.5)⁴⁺ concentration increased, there was a significant decrease in the average grain size of samples. The short range order (SRO) structure and structural distortion of oxygen octahedra proved to exist in CNT-CTx crystals according to the analysis of Raman spectra results. The microwave dielectric properties highly depended on the full width at half maximum (FWHM) of Raman spectra, oxygen octahedra distortion, reduction of Ti⁴⁺ to Ti³⁺ and bond valence. At last, the CNT-CT0.05 ceramic sintered at 1420?°C for 4?h exhibited the good and stable comprehensive microwave dielectric properties: relative permittivity of 96.5, quality factor of 14,360?GHz, and temperature coefficient of resonant frequency of +153.3?ppm/°C.     

Enhanced piezoelectric,electrocaloric and energy storage properties at high temperature in lead-free Bi0.5(Na1-xKx)0.5TiO3 ceramics

The piezoelectric, electrocaloric and energy storage properties were systemically investigated in lead-free Bi_0.5(Na_1-xK_x)_0.5TiO₃ ceramics from room temperature to high temperature region. These ceramics can be poled completely to obtain large piezoelectric coefficient (104–153 pC/N) at low electric field of ~30?kV/cm. The piezoelectric property shows good thermal stability due to high depolarization temperature (T_d). For BNKT₂₀, a large low electric field-induced strain of 0.36% is obtained at 120?°C under 50?kV/cm, the corresponding normalized strain coefficient is up to 720?pm/V, which is larger than other BNT-based ceramics at high temperature region. The electrocaloric properties of these ceramics are studied via indirect and direct methods. Large EC value (~1.08?K) in BNKT₂₀ ceramic is obtained at 50?kV/cm using indirect calculation. Above 100?°C, the dielectric energy storage density and efficiency of BNKT₂₀ is still up to ~0.85?J/cm³ and 0.75, respectively. The BNKT_x ceramics may become promising candidates in the fields of actuators, electrocaloric cooling and energy storage at high temperature region.     

Dielectric and optical properties of Ni doped Na0.5Bi0.5TiO3

Polycrystalline Ni doped Na_.5Bi_0.5TiO₃ samples (Na_0.5Bi_0.5)Ti_1-xNi_xO_3, (x?=?0.5, 0.10, 0.15) have been prepared by solid state reaction. The appearance of the additional peak in X-ray diffraction pattern indicates the ordering of Ti⁴⁺ and Ni²⁺ ions. Polygonal grains are converted into flakes with an increase of Ni concentration. Replacement of Ti⁴⁺ by Ni²⁺ strongly modifies the relative contribution of two peaks in the Raman bands within 200–400?cm^?1. Oxygen vacancy is observed in X-ray photoelectron spectrum to maintain charge neutrality due to aliovalent doping. Broad diffuse phase transition centered at the dielectric constant maximum indicates relaxor behaviour. Comparison between impedance and electric modulus spectrum suggests non-Debye relaxation. The ac conductivity follows the power law with the frequency exponent lies 0.52???0.72. The generation of holes by divalent Ni dopant at tetravalent Ti sites enhances optical band gap.     

Large Electromechanical Strain in Lead‐Free Binary System K0.5Bi0.5TiO3‐Bi(Mg0.5Ti0.5)O3

Solid solution formation in the lead‐free binary system (1?x)K_0.5Bi_0.5TiO₃?xBi(Mg_0.5Ti_0.5)O₃ has been studied for compositions x ≤ 0.12. X‐ray powder diffraction shows single‐phase perovskite for x < 0.1, and a mixed phase region between tetragonal and pseudocubic phases for compositions 0.04 ≤ x ≤ 0.06. Large electromechanical strains of ~0.3% at fields of 50 kV/cm are recorded in the mixed phase region, with d₃₃* (S_max/E_max) values of ~600 pm/V. The materials sustain polarization at low electric fields with remnant polarization ~18 μC/cm² and coercive field ~20 kV/cm for x = 0.06. Relative permittivity‐temperature plots display relaxor characteristics, with peak temperature ~340°C.     

Enhanced dielectric properties of La-doped 0.75BaTiO3-0.25Bi(Mg0.5Ti0.5)O3 ceramics for X9R-MLCC application

A series of 0.75Ba_(1?x)La_2x/3TiO₃-0.25Bi(Mg_0.5Ti_0.5)O₃ (x = 0–0.2) ceramics have been synthesized by doping La₂O₃ into 0.75BaTiO₃-0.25Bi(Mg_0.5Ti_0.5)O₃ (0.75BT-0.25BMT), and their structure and dielectric properties investigated. Upon characterizing the structural properties, the single-phase perovskite structure is identified for all the samples and the long-range order of 0.75BT-0.25BMT is verified to be further destroyed with the addition of La₂O₃. Moreover, it is found that the density of 0.75BT-0.25BMT can be improved by doping with La₂O₃, which also promotes the grain growth. Regarding the dielectric properties, the peak shifting effect induced by La³⁺ improves the permittivity-temperature stability of 0.75BT-0.25BMT remarkably by strengthening its relaxation behavior. Among all the samples, 0.75Ba_0.8La_0.4/3TiO₃-0.25Bi(Mg_0.5Ti_0.5)O₃ shows the most outstanding permittivity-temperature stability with ε_r = 572 ± 15% (compared with ε_r at 25 °C) over the temperature range ?70°C–238 °C at 1 kHz, which is notably better than that of 0.75BT-0.25BMT (?4°C–58 °C) and satisfies the specification of the X9R multilayer ceramic capacitor (MLCC). Our work provides one promising option for selecting an alternative dielectric material in terms of permittivity-temperature stability, which advances the development of the X9R MLCC.     

Complex structural contribution of the morphotropic phase boundary in Na0.5Bi0.5TiO3 - CaTiO3 system

The correlation between structure and dielectric properties of lead-free (1-x)Na_0.5Bi_0.5TiO₃ - xCaTiO₃ ((1-x)NBT - xCT) polycrystalline ceramics was investigated systematically by X-ray diffraction, combined with impedance spectroscopy for dielectric characterizations. The system shows high miscibility in the entire composition range. A morphotropic phase boundary (MPB), at 0.09?≤?x?<?0.15 was identified where rhombohedral and orthorhombic symmetries coexist at room temperature. The fraction of orthorhombic phase increases gradually with x in the MPB region. Dielectric measurements reveal that the relative permittivity increase with addition of Ca²⁺. This behavior is unusual with this kind of doping. A thermal hysteresis occurred only in the MPB composition which varies in a non-monotonically manner with x, detected by dielectric properties. This phenomenon is related to the crystalline microstructure by a linear relationship between the fraction of each phase and dielectric properties, and, more precisely, to the strong interaction between rhombohedral and orthorhombic phases.     

Structure–property relationships of perovskite-structured Ca0.61Nd0.26Ti1-x(Cr0.5Nb0.5)xO3 ceramics

A series of Ca_0.61Nd_0.26Ti_1-x(Cr_0.5Nb_0.5)_xO₃ (CNTCNx) (0 ≤ x ≤ 0.1) ceramics were prepared via a solid state reaction method. All CNTCNx samples were crystallized into the orthorhombic perovskite structure. The SEM micrographs indicated that the average grain sizes of samples depended on (Cr_0.5Nb_0.5)⁴⁺ concentration. And as (Cr_0.5Nb_0.5)⁴⁺ concentration increased, the average grain size of samples decreased significantly. The short range order (SRO) structure and structural distortion of oxygen octahedra proved to exist in CNTCNx crystals from Raman spectra analysis results. The microwave dielectric properties highly depended on the B-site bond strength, oxygen octahedra distortion, reduction of Ti⁴⁺ to Ti³⁺ and internal strain η. At last, the CNTCN0.06 ceramic sintered at 1400 °C for 4 h exhibited good and stable comprehensive microwave dielectric properties of ε_r = 92.3, Q × f = 13,889 GHz, τ_f = + 152.8 ppm/°C.     

High quality factor microwave dielectric ceramics in the (Mg1/3Nb2/3)O2–ZrO2–TiO2 ternary system

Novel high quality factor microwave dielectric ceramics (1?x)ZrTiO₄?x(Mg_1/3Nb_2/3)TiO₄ (0.325≤x≤0.4) and (ZrTi)_1?y(Mg_1/3Nb_2/3)_yO₄ (0.2≤y≤0.5) with the addition of 0.5 wt% MnCO₃ in the (Mg_1/3Nb_2/3)O₂–ZrO₂–TiO₂ ternary system were prepared, using solid‐state reaction method. The relationship between the structure and microwave dielectric properties of the ceramics was studied. The XRD patterns of the sintered samples reveal the main phase belonged to α‐PbO₂‐type structure. Raman spectroscopy and infrared reflectivity (IR) spectra were employed to evaluate phonon modes of ceramics. The 0.65ZrTiO₄?0.35(Mg_1/3Nb_2/3)TiO₄?0.5 wt% MnCO₃ ceramic can be well densified at 1240°C for 2 hours and exhibits good microwave dielectric properties with a relative permittivity (ε_r) of 42.5, a quality factor (Q×f) value of 43 520 GHz (at 5.9 Ghz) and temperature coefficient of resonant frequency (τ_f) value of ?5ppm/°C. Furthermore, the (ZrTi)_0.7(Mg_1/3Nb_2/3)_0.3O₄?0.5 wt% MnCO₃ ceramic sintered at 1260°C for 2 hours possesses a ε_r of 31.8, a Q×f value of 35 640 GHz (at 6.3 GHz) and a near zero τ_f value of ?5.9 ppm/°C. The results demonstrated that the (Mg_1/3Nb_2/3)O₂–ZrO₂–TiO₂ ternary system with excellent properties was a promising material for microwave electronic device applications.