Effects of oxidation curing and sintering temperature on the microstructure formation and heat transfer performance of freestanding polymer-derived SiC films for high-power LEDs

Effects of oxidation cross-linking and sintering temperature on the microstructure evolution, thermal conductivity and electrical resistivity of continuous freestanding polymer-derived SiC films were investigated. The as-received films consisting of β-SiC nanocrystals embedded in amorphous SiO_xC_y and free carbon nanosheets were fabricated via melt spinning of polycarbosilane (PCS) precursors and cured for 3 h/10 h followed by pyrolysis from 900 °C to 1200 °C. Results reveal that nanoscale structure (β-SiC/SiO_xC_y/C_free) provides an ingenious strategy for constructing highly thermal conductive, highly insulating and highly flexible complexes. In particular, the 3 h-cured films sintered at 1200 °C with satisfying thermal conductivity (46.8 W m^?1 K^?1) and electrical resistivity (2.1 × 10⁸ Ω m) are suitable for the realization of high-performance substrates. A remarkable synergistic effect (lattice vibration of β-SiC nanocrystals and close-packed SiO_xC_y, free-electron heat conduction of β-SiC and free carbon, and supporting role of oxygen vacancy) contributing to thermal conductivity improvement is proposed based on the analysis of microstructure, intrinsic properties and simulations. Eventually, the SiC films without additional dielectric layers are directly silk-screen printed with high-temperature silver paste and used as heat dissipation substrates for high-power LED devices via chip-on-board (COB) package. The final devices can emit bright light with low-junction temperature (52.6 °C) and good flexibility owing to the mono-layer SiC substrate with low thermal resistance and desirable mechanical properties. This work offers an effective approach to design and fabricate flexible heat dissipation ceramic substrates for thermal management in advanced electronic packaging fields.     

Facile synthesis of SiOx spheres or dumbbell-shaped β-SiC whiskers on expanded graphite by silicon vapor deposition

A facile method was developed to synthesize SiO_x spheres or dumbbell-shaped β-SiC whiskers on expanded graphite (SiO_x/EG or β-SiC/EG) by silicon vapor deposition without catalyst. With the carbon black atmosphere, the above hybrids were synthesized above 1100 °C in a graphite crucible where silicon powder was placed under the expanded graphite (EG). The growth of SiO_x spheres is controlled by vapor-solid mechanism at 1100 °C and 1200 °C. Namely, the active carbon atoms absorbed SiO (g) and Si (g) to form SiC nuclei. Then, the SiO₂, residual SiO (g) and Si (g) deposited on SiC nuclei to form SiO_x spheres. At 1300 °C and 1400 °C, the same SiO_x spheres formed on EG as well as many dumbbell-shaped β-SiC whiskers. The growth of dumbbell-shaped β-SiC whiskers is controlled by vapor-vapor and vapor-solid mechanism successively. In a word, firstly, the β-SiC whiskers with defects formed via the reaction between Si (g) and CO (g). After that, the SiO₂, residual SiO (g) and residual Si (g) preferentially deposited on defects, then deposited on other parts of β-SiC whiskers to form dumbbell-shaped SiC whiskers.     

Crystallization of SiC and its effects on microstructure,hardness and toughness in TaC/SiC multilayer films

A series of TaC/SiC multilayer films with different SiC thicknesses (t_SiC) have been prepared by magnetron sputtering and their microstructure, hardness and toughness investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and nanoindentation. Results show that SiC crystallized and grew coherently with TaC layers at low t_SiC (≤ 0.8 nm), resulting from the template effect of TaC layers. Maximum hardness and toughness of 46.06 GPa and 4.21 MPa m^1/2 were achieved at t_SiC = 0.8 nm with good coherent interface. With further increasing of t_SiC, SiC layers partially transformed to an amorphous structure and gradually lost their coherent interface, leading to a rapid drop in hardness and toughness. The crystallization of SiC layers and the coherent growth are required to achieve superhardness and high toughness in the TaC/SiC multilayers.     

Research on microstructure and oxidation resistant property of ZrSi2-SiC/SiC coating on HTR graphite spheres

ZrSi₂-SiC/SiC coating was prepared on the surface of high temperature gas-cooled reactor (HTR) matrix graphite spheres by two-step pack cementation and sintering process. The microstructure, oxidation resistance and thermal shock resistance properties of the as-prepared coatings with different original powder mixtures were investigated. Results show that dense microstructure of the ZrSi₂-SiC/SiC coating and continuous ZrSiO₄-SiO₂-ZrO₂ glass phase generated during the oxidation process were the key factors for the outstanding thermal properties. When the mole ratio of Zr:Si:C reaches 1:7:3 in the second pack cementation powders, the coated graphite spheres have optimum oxidation resistant ability. The weight gain is only 0.6 wt% after 15 times thermal shock tests and 0.12 wt% after isothermal oxidation test at 1500 °C for 20 h in air. The oxidation resistant mechanism of the coating was also discussed. The dense inner SiC layer and the outer glass layer generated during the oxidation process could protect the ZrSi₂-SiC/SiC coating from further oxidation.     

Oxidation protective MoSi2-SiC-Si coating for graphite materials prepared by slurry dipping and vapor silicon infiltration

A novel kind of dense MoSi₂-SiC-Si coating was prepared on the surface of graphite substrate by slurry dipping and vapor silicon infiltration process. Mo-SiC-C precoating was fabricated via slurry dipping method, and then MoSi₂-SiC-Si coating with dense structure consisting of Si, MoSi₂ and SiC was obtained by vapor silicon infiltration process. The isothermal oxidation tests at temperatures from 800 to 1600 °C and TGA test from room temperature to 1500 °C were used to evaluate the oxidation resistance ability of the MoSi₂-SiC-Si coating. The experimental results indicate that the prepared coating has good oxidation protection ability at a wide temperature range from room temperature to 1600 °C. Meanwhile, the oxidation of the coated samples is a weight gain process at temperatures from 800 to 1500 °C due to the formed SiO₂ layer on the surface of coating. After oxidation for 220 h at 1600 °C, the weight loss of the coated sample was only 0.96%, which is considered to be the excessive consumption of the outer coating and the appearance of defects in the coating. Two layers can be observed in the coating after oxidation, namely, SiO₂ layer and MoSi₂-SiC-Si layer.     

Mechanical Properties and Microstructural Characterization of Amorphous SiCxNy Thin Films After Annealing Beyond 1100°C

The effect of thermal annealing on structure and mechanical properties of amorphous SiC_xN_y (y ≥ 0) thin films was investigated up to 1500°C in air and Ar. The SiC_xN_y films (2.2–3.4 μm) were deposited by reactive DC magnetron sputtering on Si, Al₂O₃ and α‐SiC substrates without intentional heating and at 600°C. The SiC target with small excess of carbon was sputtered at various N₂/Ar gas flow ratios (0–0.48). The nitrogen content in the films changes in the range 0–43 at.%. Hardness and elastic modulus (nanoindentation), change in film thickness, film composition, and structure (Raman spectroscopy, XRD) were investigated in dependence on annealing temperature and nitrogen content. All SiC_xN_y films preserve their amorphous structure up to 1500°C. The hardness of all as‐deposited and both air‐ and Ar‐annealed SiC_xN_y films decreases with growth of nitrogen content. The annealing in Ar at temperatures of 1100°C–1300°C results in noticeable hardness growth despite the ordering of graphite‐like structure in carbon clusters in nitrogen free films. Unlike the SiC, this graphitization leads to hardness saturation of SiCN films starting above 900°C, especially for films with higher nitrogen content (deposited at higher N₂/Ar). This indicates the practical hardness limit achievable by thermal treatment for SiC_xN_y films deposited on unheated substrates. The ordering in carbon phase is facilitated by the presence of nitrogen in the films and its extent is controlled by the N/C atomic ratio. The suppression of graphitization was observed for N/C ranging between 0.5–0.7. Films deposited at 600°C show higher hardness and oxidation resistance after annealing in comparison with those deposited on unheated substrates. Hardness reaches 40 GPa for SiC and ~28 GPa for SiC_xN_y (35 at.% of nitrogen). Such a high hardness of SiC film stems from its partial crystallization. Annealing of SiC_xN_y film (35 at.% of N) in Ar at 1400°C is accompanied by formation of numerous hillocks (indicating heterogeneous structure of amorphous films) and redistribution of film material.     

Process-tolerant pressureless-sintered silicon carbide ceramics with alumina-yttria-calcia-strontia

Process-tolerant SiC ceramics were prepared by pressureless sintering at 1850–1950 °C for 2 h in an argon atmosphere with a new quaternary additive (Al₂O₃-Y₂O₃-CaO-SrO). The SiC ceramics can be sintered to a > 94% theoretical density at 1800–1950 °C by pressureless sintering. Toughened microstructures consisting of relatively large platelet grains and small equiaxed grains were obtained when SiC ceramics were sintered at 1850–1950 °C. The presently fabricated SiC ceramics showed little variability of the microstructure and mechanical properties with sintering within the temperature range of 1850–1950 °C, demonstrating process-tolerant behavior. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature from 1800 °C to 1900 °C due to decreases of the lattice oxygen content of the SiC grains and residual porosity. The flexural strength, fracture toughness, and thermal conductivity of the SiC ceramics sintered at 1850–1950 °C were in the ranges of 444–457 MPa, 4.9–5.0 MPa m^1/2, and 76–82 Wm^?1 K^?1, respectively.     

Effects of SiC whiskers on the mechanical properties and microstructure of SiC ceramics by reactive sintering

As-received and pre-coated SiC whiskers (SiC_w)/SiC ceramics were prepared by phenolic resin molding and reaction sintering at 1650 °C. The influence of SiC_w on the mechanical behaviors and morphology of the toughened reaction-bonded silicon carbide (RBSC) ceramics was evaluated. The fracture toughness of the composites reinforced with pre-coated SiC_w reached a peak value of 5.6 MPa m^1/2 at 15 wt% whiskers, which is higher than that of the RBSC with as-received SiC_w (fracture toughness of 3.4 MPa m^1/2). The surface of the whiskers was pre-coated with phenolic resin, which could form a SiC coating in situ after carbonization and reactive infiltration sintering. The coating not only protected the SiC whiskers from degradation but also provided moderate interfacial bonding, which is beneficial for whisker pull-out, whisker bridging and crack deflection.     

Fabrication of a SiC/Si/MoSi2 multi-coating on graphite materials by a two-step technique

A SiC/Si/MoSi₂ multi-coating for graphite materials was prepared by a two-step technique. SiC whisker reinforcement coating was produced by pyrolysis of hydrogen silicone oil (H-PSO) at 1600 °C, and then the dense coating was formed by embedding with the powder mixture of Si, graphite and MoSi₂ at 1600 °C in argon atmosphere. The microstructure, thickness, phase and oxidation resistance of the coating were investigated. Research results showed that, the phase of multi-coating was composed of SiC, Si and MoSi₂. The thickness of the coating was about 300 μm. In addition, the coating combined with matrix well, and surface was continuous and dense. The oxidation pretreatment experiment was carried out in the static air at 1400 °C for 4 h before thermal failure tests and the specimens had 0.045% weight gain. Subsequent thermal failure tests showed that, the SiC/Si/MoSi₂ multi-coating had excellent anti-oxidation property, which could protect graphite materials from oxidation at 1000 °C in air for 12 h and the corresponding weight loss was below 1 wt%. Based on the surface morphology changes, oxidation pretreatment experiment and thermal failure tests enhanced densification of multi-coating and the coating had a certain self-healing ability.     

Effects of post-sintering annealing on the microstructure and toughness of hot-pressed SiCf/SiC composites with Al2O3-Y2O3 additions

This study examined the effects of post-sintering heat treatment on enhancing the toughness of SiC_f/SiC composites. Commercially available Tyranno^® SiC fabrics with contiguous dual ‘PyC (inner)-SiC (outer)’ coatings deposited on the SiC fibers were infiltrated with a SiC + 10 wt% Al₂O₃-Y₂O₃ slurry by electrophoretic deposition. SiC green tapes were stacked between the slurry-infiltrated fabrics to control the matrix volume fraction. Densification of approximately 94% ρ_theo was achieved by hot pressing at 1750 °C, 20 MPa for 2 h in an Ar atmosphere. Sintered composites were then subjected to isothermal annealing treatment at 1100, 1250, 1350, and 1750 °C for 5 h in Ar. The correlation between the flexural behavior and microstructure was explained in terms of the in situ-toughened matrix, phase evolution in the sintering additive, role of dual interphases and observed fracture mechanisms. Extensive fractography analysis revealed interfacial debonding at the hybrid interfaces and matrix cracking as the key fracture modes, which were responsible for the toughening behavior in the annealed SiC_f/SiC composites.     

Limiting factors for low-temperature performance of electrolytes in LiFePO4/Li and graphite/Li half cells

Low-temperature performance of LiBF₄ and LiPF₆-based electrolytes in LiFePO₄/Li and graphite/Li half cells was investigated. In the temperature range from 0 °C to ?40 °C, electrochemical impedance spectroscopy (EIS) results show that the charge-transfer resistance (R_ct) of graphite/Li cell decreases, the R_ct of LiFePO₄/Li cell increases, and sum resistance of LiFePO₄/Li and graphite/Li cell decreases when replacing LiPF₆ with LiBF₄. In the temperature range from 25 °C to ?40 °C, energy barrier (W) for Li-ion jump at the solid electrolyte interface (SEI) alters slightly from 16.04 kJ/mol to 13.60 kJ/mol in LiFePO₄/Li cells, but declines greatly from 46.47 kJ/mol to 19.81 kJ/mol in graphite/Li cells when using LiBF₄ instead of LiPF₆, meanwhile, activation energy (ΔG) of electrode reaction is approximately the same (～60 kJ/mol). The above results indicate that the ionic conductivity is the main limiting factor for low-temperature performance of electrolytes in LiFePO₄/Li cell, while factors related with electrolyte-interface are more crucial in graphite/Li cell than in LiFePO₄/Li cell.     

Electrolytic synthesis of TiC/SiC nanocomposites from high titanium slag in molten salt

The molten salt electrolytic method for the preparation of titanium carbide and silicon carbide composites has been subjected to a systematic investigation by experimental analyses and thermodynamic calculations. It has been confirmed that the electrolysis of high titanium slag in the presence of mixed graphite powders generates intermediates CaTiO₃, Ti₂O₃, TiO, Fe₃Si and objective carbonous products TiC/SiC. It has been furthermore found that the deoxidization process depends critically on a number of process parameters, namely, electrolyte composition, graphitic regime, reaction temperature, cell voltage and reaction time. After careful optimization of these parameters, TiC/SiC nanocomposites with particle sizes of 10–174 nm has been produced by electrolysis of high titanium slag and graphite mixtures in molar ratio of 1:2 referred to Ti:C under 3.2 V at 900 °C for 6 h in 1 mol%CaO-CaCl₂-NaCl molten salt and with particle sizes of 12 nm~207 nm in 1 mol%CaO-CaCl₂ electrolyte.     

Sintering behaviour and microwave dielectric properties of BaAl2−2x(ZnSi)xSi2O8 ceramics

BaAl_2?2x(ZnSi)_xSi₂O₈ (x = 0.2–1.0) ceramics were prepared using the conventional solid-state reaction method. The sintering behaviour, phase composition and microwave dielectric properties of the prepared compositions were then investigated. All compositions showed a single phase except for x = 0.8. By substituting (Zn_0.5Si_0.5)³⁺ for Al³⁺ ions, the optimal sintering temperatures of the compositions decreased from 1475 °C (x = 0) to 1000 °C (x = 0.8), which then slightly increased to 1100 °C (x = 1.0). Moreover, the phase stability of BaAl₂Si₂O₈ was improved. A novel BaZnSi₃O₈ microwave dielectric ceramic was obtained at the sintering temperature of 1100 °C. This ceramic possesses good microwave dielectric properties with ε_r = 6.60, Q × f = 52401 GHz (at 15.4 GHz) and τ_f = ?24.5 ppm/°C.     

Fabrication of tough SiCf/SiC composites by electrophoretic deposition using a fabric coated with FeO-catalyzed phenolic resin

A hybrid processing route based on vacuum infiltration, electrophoretic deposition, and hot-pressing was adopted to fabricate dense and tough SiC_f/SiC composites. The as-received Tyranno SiC fabric preform was infiltrated with phenolic resin containing 5 wt.% FeO and SiC powders followed by pyrolysis at 1700 °C for 4 h to form an interphase. Electrophoretic deposition was performed to infiltrate the SiC-based matrix into the SiC preforms. Finally, SiC green tapes were sandwiched between the SiC fabrics to control the volume fraction of the matrix. Densification close to 95% ρ_theo was achieved by incorporating 10 wt.% Al₂O₃-Sc₂O₃ sintering additive to facilitate liquid phase sintering at 1750 °C and 20 MPa for 2 h. X-ray diffraction and Raman analyses confirmed the catalytic utility of FeO by the formation of a pyrolytic carbon phase. The flexural response was explained in terms of the extensive fractography results and observed energy dissipating modes.     

Structural characterization of YSZ/Al2O3 nanostructured composite coating fabricated by electrophoretic deposition and reaction bonding

Suspension of YSZ and Al particles in acetone in presence of 1.2 g/l iodine as dispersant was used for electrophoretic deposition of green form YSZ/Al coating. Results revealed that applied voltage of 6 V and deposition time of 3 min were appropriate for deposition of green composite form coating. After deposition, a nanostructured dense YSZ/Al₂O₃ composite coating was fabricated by oxidation of Al particles at 600 °C for 2 h and subsequently sintering heat treatment at 1000 °C for 2 h. Melting and oxidation of Al particles in the green form composite coating not only caused reaction bonding between the particles but also lowered the sintering temperature of the ceramic coating about 200 °C. The EDS maps confirmed that the composition of fabricated coating was uniform and Al₂O₃ particles were dispersed homogenously in YSZ matrix.     

Effects of oxidation cross-linking and sintering additives (TiN,B) on the formation and heat-resistant performance of polymer-derived SiC(Ti,B) films

Effects of oxidation cross-linking and sintering additives (TiN, B) on the microstructure formation and heat-resistant performance of freestanding SiC(Ti, B) films synthesized from Ti, B-containing polycarbosilane (TiB-PCS) precursor were investigated. TiB-PCS green films were first cross-linked for 1 h, 2 h, 3 h and 4 h, respectively, and then pre-sintered at 950 °C. Finally, they were sintered at 1800 °C to complete the conversion from organic films to inorganic SiC(Ti, B) films. The results reveal that curing time has a great impact on the uniformity and density of SiC(Ti, B) films. TiB-PCS films cured for 3 h yield the best quality SiC(Ti, B) films, which are composed of β-SiC crystals, C clusters, α-SiC nano-crystals, a small amount of TiB₂ and B₄C. TiB₂ and B₄C are both steady phases which can inhibit abnormal growth of β-SiC, effectively reduce sintering temperature and help consume excess C from decomposition of amorphous SiOxCy. After high temperature annealing at 1500 °C, 1600 °C and 1700 °C in argon, SiC(Ti, B) films still keep excellent mechanical properties, which makes them attractive candidate materials for microelectromechanical systems (MEMS) used at ultra-high temperatures (exceeding 1500 °C).     

Fabrication of porous Al2O3-based ceramics using ball-shaped powders by preceramic polymer process in N2 atmosphere

Porous Al₂O₃-based ceramics were successfully fabricated using ball-shaped powders by preceramic polymer process in N₂ atmosphere. These results showed that the amorphous Si-O-C ceramics were formed on the surface of ball-shaped Al₂O₃ particles by the pyrolysis of the silicone resin during sintering in N₂ atmosphere, which played a role in connecting the Al₂O₃ particles by forming the sintering necks. When the sintering temperatures increased from 1100 °C to 1600 °C, the formed Si-O-C ceramics still existed in the amorphous state and had no crystallization. Interestingly, the amorphous β-SiC formed at 1300 °C and its amount gradually increased with further increasing temperatures. The linear shrinkage rate of the samples varied from 0.49% to 0.73% and the weight loss rate increased from 2.01% to 10.77%. The apparent porosity remarkably varied with the range of 24.9% and 34.5%, as the bulk-density varied from 2.66 to 2.47 g/cm³. The bending strength gradually increased from 9.36 to 22.51 MPa with increasing temperatures from 1100 °C to 1500 °C, however, the bending strength remarkably decreased at 1600 °C, which was attributed to the comprehensive function of the high porosity, broken Al₂O₃ particles and weak connection between Al₂O₃ particles in the samples.     

Structural characterization of plasma sprayed basalt–SiC glass–ceramic coatings

In the present study, the effect of SiC addition on properties of basalt base glass–ceramic coating was investigated. SiC reinforced glass–ceramic coating was realized by atmospheric air plasma spray coating technique on AISI 1040 steel pre-coated with Ni + 5 wt.%Al bond coat. Composite powder mixture consisted of 10%, 20% and 30% SiC by weight were used for coating treatment. Controlled heat treatment for crystallization was realized on pre-coated samples in argon atmosphere at 800 °C, 900 °C and 1000 °C which determined by differential thermal analysis for 1–4 h in order to obtain to the glass–ceramic structure. Microstructural examination showed that the coating performed by plasma spray coating treatment and crystallized was crack free, homogeneous in macro-scale and good bonded. The hardness of the coated samples changed between 666 ± 27 and 873 ± 32 HV_0.01 depending on SiC addition and crystallization temperature. The more the SiC addition and the higher the treatment temperature, the harder the basalt base SiC reinforced glass–ceramic coating became. X-ray diffraction analysis showed that the coatings include augeite [(CaFeMg)–SiO₃], diopside [Ca(Mg_0.15Fe_0.85)(SiO₃)₂], albite [(Na,Ca)Al(Si,Al)₃O₈], andesine [Na_0.499Ca_0.492(Al_1.488Si_2.506O₈] and moissanite (SiC) phases. EDX analyses support the X-ray diffraction analysis.     

Machinability of Ti3SiC2 with layered structure synthesized by hot pressing mixture of TiCx and Si powder

Nanolaminate Ti₃SiC₂ was synthesized from a mixture of TiC_x (x = 0.67)/Si powder by hot pressing to increase machinability. Ti₃SiC₂ was synthesized at temperatures of 1360 °C and 1420 °C for 90 min under a pressure of 25 MPa. The X-ray diffraction results showed that while mainly Ti₃SiC₂ with some unreacted TiC_x were detected in the synthesized samples at 1360 °C, no phases except Ti₃SiC₂ phases remained in the synthesized samples at 1420 °C. The cutting resistance of Ti₃SiC₂ was measured in terms of the principle, feed, and thrust forces and was compared with that of middle-carbon steel, SM45C. The values of the principal force of the synthesized Ti₃SiC₂ were lower than those of SM45C. After machining, the roughness of the Ti₃SiC₂ was lower than those of SM45C; however, the damage to the tool bit used for the machining of SM45C was less than the damage to those used for the machining of the Ti₃SiC₂.     

High-temperature oxidation of AlN–SiC–TiB2 ceramics in air

The oxidation behaviour of AlN–SiC–TiB₂ composite materials with 2, 5 and 10 mass% TiB₂ and 3 mass% Fe additive obtained using powder metallurgy methods was studied in air up to 1500 °C by thermogravimetry (TG) and differential thermal analysis (DTA) techniques. The phase composition and structure of the oxide films formed were investigated using metallography, X-ray diffraction (XRD) and electron probe microanalysis (EPMA) methods. The two-stage character of non-isothermal oxidation kinetics (heating rate of 15 grade/min) of composites was established. During the first oxidation stage (up to 1350 °C), the formation of α-Al₂O₃, TiO₂ (rutile), B₂O₃ and β-cristobalite as well as different aluminium borates was found. They formed as a result of interaction between Al₂O₃ and melted B₂O₃. During the second stage (above 1350–1400 °C), the mullite 3Al₂O₃·2SiO₂ proved to be a main oxidation product in the scale; besides, some amounts of β-Al₂TiO₅ were formed as well. The iron additive dissolved in the mullite and aluminium titanate phases that led to the stabilization of a scale formed. It was established that for the three different TiB₂ contents, oxidation isotherms follow the parabolic or paralinear rate law. The slope change on the Arrhenius plot given by the dependence of the parabolic rate constants on the reciprocal temperature, suggests a change of the oxidation mechanism in the temperature range of 1300–1350 °C. For example, for the (AlN–SiC)–5% TiB₂ composite specimen, the calculated values of apparent activation energy are equal to 285 kJ/mol (1100–1300 °C) and 500 kJ/mol (1350–1550 °C), respectively. The AlN–SiC–TiB₂ ceramics developed here can be recommended as high-performance materials for a use in oxidizing medium up to 1450 °C.