THM growth and characterization of CuGaxIn1−xSe2 solid solutions

Growth of CuGa_xIn_1−xSe₂ single crystals by THM (traveling heater method) has been investigated. On the basis of the relation between the composition x of grown crystal CuGa_xIn_1−xSe₂ and y of CuGa_yIn_1−ySe₂ solute in 60 mol% In solution, THM growth of CuGa_xIn_1−xSe₂ (x = 0, 0.2, 0.4, 0.7, 1) was performed using a zone ingot which was prepared in advance. Bulk single crystals with 10 mm in diameter and 20–30 mm in length have been obtained by the THM growth, and their electrical and optical properties have been studied.     

Preparation of Culn(SxSe1−x)2 thin films by sulfurization and selenization

A CuIn(S_xSe_1−x)₂ alloy thin-film was prepared by selenization of CuInS₂: its composition ratio x can be controlled by the number of selenization cycles implemented. Crystallinity of the films was improved by annealing in vacuum. The resistivity of the film was about 1 Ω cm and increased by one to two orders of magnitude after KCN treatment. An 8.1 % efficiency solar cell was obtained by using this annealed alloy thin-film.     

Crystal growth of CuGaxIn1−xSe2 by horizontal bridgman method

Single crystals of CuGa_xIn_1−xSe₂ were grown from stoichiometric melt by horizontal Bridgman method. An non-contact carbon coating method was used to avoid sticking between quartz ampoule and the melt. The composition variations along the as-grown ingots were studied as a function of Ga content. X-ray powder diffraction measurements were carried out to determine the lattice constants.     

Electrochemical supercapacitor behavior of nanoparticulate rutile-type Ru1−xVxO2

Rutile-type Ru_1−xV_xO₂ nanoparticles possessing high surface area were prepared by a polymerizable-complex method and its electrochemical supercapacitor behavior was studied. X-ray diffractometry, energy-dispersive X-ray analysis, and N₂ adsorption/desorption measurements were used to characterize the structure of the products. The electrochemical supercapacitor behavior of thick and thin films was studied by cyclic voltammetry in various acidic, neutral, and alkaline electrolytes. Ru_1−xV_xO₂ exhibited extremely enhanced supercapacitive properties compared to pure RuO₂. The highest surface redox activity was achieved with an acidic electrolyte. Ru_1−xV_xO₂ showed negligible surface redox activity in neutral electrolytes.     

Novel device structure for Cu(In,Ga)Se2 thin film solar cells using transparent conducting oxide back and front contacts

Cu(In_1−xGa_x)Se₂ (CIGS)-based thin film solar cells fabricated using transparent conducting oxide (TCO) front and back contacts were investigated. The cell performance of substrate-type CIGS devices using TCO back contacts was almost the same as that of conventional CIGS solar cells with metallic Mo back contacts when the CIGS deposition temperatures were below 500 °C for SnO₂:F and 520 °C for ITO. CIGS thin film solar cells fabricated with ITO back contacts had an efficiency of 15.2% without anti-reflection coatings. However, the cell performance deteriorated at deposition temperatures above 520 °C. This is attributed to the increased resistivity of the TCO’s due to the removal of fluorine from SnO₂ or undesirable formation of a Ga₂O₃ thin layer at the CIGS/ITO interface. The formation of Ga₂O₃ was eliminated by inserting an intermediate layer such as Mo between ITO and CIGS. Furthermore, bifacial CIGS thin film solar cells were demonstrated as being one of the applications of semi-transparent CIGS devices. The cell performance of bifacial devices was improved by controlling the thickness of the CIGS absorber layer. Superstrate-type CIGS thin film solar cells with an efficiency of 12.8% were fabricated using a ZnO:Al front contact. Key techniques include the use of a graded band gap Cu(In,Ga)₃Se₅ phase absorber layer and a ZnO buffer layer along with the inclusion of Na₂S during CIGS deposition.     

Large area CIGS2 thin film solar cells on foils: nucleus of a pilot plant

In earlier research, conversion efficiency of 10.4% (AM1.5) and 9.9% (AM0) has been achieved on small area CuIn_xGa_1−xS₂ (CIGS2) solar cell on 127 μm thick stainless steel substrate. The area of research is mainly focused on studying CIGS2 thin films as solar cell absorber material and growing high efficiency cells on ultralightweight and flexible metallic foils such as 127 μm thick stainless steel and SiO₂ coated 25 μm thick Ti foils. This paper presents the scaling up process of CIGS2 thin film substrate from 2.5 × 2.5 cm² to 10 × 10 cm². Initial scaling up efforts focused on achieving uniform thickness and stress-free films. Process of scaling up consisted of refurbishment of selenization/sulfurization furnace, design and fabrication of scrubber and enlargement of new CdS deposition setup. The scaling up from 2.5 × 2.5 cm² to 10 × 10 cm² substrate size has laid the foundation for PV Materials Lab of Florida Solar Energy Center becoming the nucleus of a pilot plant.     

Preparation and properties of sprayed CuGa0.5In0.5Se2 thin films

CuGa_0.5In_0.5Se₂ thin films were prepared by spray pyrolysis technique at substrate temperatures (T_s) in the range 100–400°C. The films prepared at T_s = 300–350°C were nearly stoichiometric, polycrystalline with a strong preferred (112) orientation. The resistivity of the films varied in the range, 50–1000 Ω cm and the evaluated optical band gap was 1.35 eV.     

Growth and characterization of Cu(InA1)Se2 by vacuum evaporation

Quaternary chalcopyrite compounds Cu(In_1−xAl_x)Se₂ were prepared by vacuum evaporation method. It is found that the ratio of In/Al determines the nature of semiconducting properties from n-type in the region of In/Al 1 to p-type in the region of In/Al > 1.     

Preparation and properties of LiCoyMnxNi1−x−yO2 as a cathode for lithium ion batteries

The preparation of LiCo_yMn_xNi_1−x−yO₂ from LiOH·H₂O, Ni(OH)₂ and γ-MnOOH in air was studied in detail. Single-phase LiCo_yMn_xNi_1−x−yO₂ (0y0.3 and x=0.2) is obtained by heating at 830–900°C. The optimum heating temperatures are 850°C for y=0–0.1 and 900°C for y=0.2–0.3. Excess lithium (1z1.11 for y=0.2) and the Co doping level (0.05y0.2) do not significantly affect the discharge capacity of Li_zCo_yMn_0.2Ni_0.8−yO₂. The doping of Co into LiMn_0.2Ni_0.8O₂ accelerates the oxidation of the transition metal ion, and suppresses partial cation mixing. Since the valence of the manganese ion in LiMn_0.2Ni_0.8O₂ is determined to be 4, the formation of a solid solution between LiCo_yNi_1−yO₂ and Li₂MnO₃ is confirmed.     

On the reversibility of hydrogen storage in Ti- and Nb-catalyzed Ca(BH4)2

The hydrogen sorption properties of calcium borohydride (Ca(BH₄)₂) catalyzed with a small amount of TiF₃, TiCl₃, NbF₅ or NbCl₅ are investigated using thermal analyses and X-ray diffraction. NbF₅ exhibits the best performance among all the catalysts; it causes a decrease in the hydrogen desorption temperature which leads to hydrogen absorption at practical temperature and pressure conditions. The hydrogen content of Ca(BH₄)₂ with NbF₅ reaches about 5.0 wt.% after hydrogen absorption at 693 K for 24 h under 90 bar of hydrogen. The main dehydrogenation product of Ca(BH₄)₂ with NbF₅ is a CaH_2−xF_x solid solution with a CaF₂ (C1) structure, while pure Ca(BH₄)₂ produces CaH₂ after hydrogen desorption.     

Structural and electrochemical properties of Li1+xNi0.5Mn0.5O2+δ (0 ≤ x ≤ 0.7) cathode materials for lithium-ion batteries

A comparative analysis of the properties of LiNi_0.5Mn_0.5O₂ and Li_1+xNi_0.5Mn_0.5O₂ (0.2 ≤ x ≤ 0.7) powders, obtained by the freeze drying method, was performed. Lattice parameters of Li_1+xNi_0.5Mn_0.5O₂ decreased considerably with growing amounts of Li until x = 0.3; at x > 0.5 trace amounts of Li₂MnO₃ are observed by X-ray diffraction (XRD) patterns. X-ray photoelectron spectroscopy (XPS) analysis displayed an increase of Ni³⁺/Ni²⁺ ratio at 0.3 < x < 0.5, while Mn 2p spectra were almost identical in all samples. Rechargeable capacity values (V = 2.5–4.6 V) increased systematically with x reaching its maximum (185–190 mAh g⁻¹) at x = 0.5. Samples with superstoichiometric lithium content also demonstrated good C rate characteristics.     

Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate

A buffer layer structure on Ge substrate was studied for MOCVD growth of a high-quality GaAs layer. The buffer layer structure was designed taking into consideration both lattice constants and thermal expansion coefficients of GaAs and Ge. It consisted of a preliminarily grown thin layer of Al_xGa_1−xAs and a GaAs layer. Photoluminescence (PL) decay of a GaAs layer in an Alo_0.2Ga_0.8As-GaAs-Al_0.2Ga_0.8As double-hetero (DH) structure, which was grown on the buffer layer structure, was observed by time-resolved PL method to estimate the quality of epilayers in the DH structure. The PL decay time strongly depended on Al content (x) of the Al_xGa_1−x As preliminary layer, and the highest value was obtained when the x was 0.25. A PL decay time above 20 ns was successfully obtained for the DH structure grown on the buffer layer structure, which consisted of a 0.05 μm thick Al_0.25Ga_0.75As layer and a 1 μm thick GaAs layer. Although this value was half of that for the DH structure grown on GaAs substrate, it was much longer than the value of 3 ns for the DH structure grown on Ge substrate with a conventional GaAs buffer layer 1 μm thick.     

Superstrate-type CuInSe2-based thin film solar cells by a low-temperature process using sodium compounds

Superstrate-type solar cells with a Au/CuInSe₂(CIS)/In_xSe_y,/ZnO : Al/glass structure were investigated. The CIS films were deposited by coevaporation method with intentionally incorporated Na₂S at a substrate temperature of 350°C. Even at relatively low substrate temperatures, sodium compounds enhanced the (1 1 2) preferred orientation of the chalcopyrite structure, and also improved the cell performance. The In_xSe_y buffer layers disappeared after CIS deposition by interdiffusion. Preliminary cells yielded an efficiency of 7.5% with V_oc, = 430 mV, J_sc = 29.4 mA/cm² and FF = 0.60. The light soaking and forward bias effects were observed for these cells.     

On the computer simulation of the P–C isotherms of ZrFe2 type hydrogen storage materials

This paper deals with computer simulation of the P–C isotherms of some ZrFe₂ type (Zr(Fe_1−xCr_x)₂, Zr_1−xTi_xFe_1.4Cr_0.6, Zr_1−2xMm_xTi_xFe_1.4Cr_0.6 : x00.4) of hydrogen storage materials. A feasible mathematical model has been developed to simulate the P–C isotherms. The randomized variables in the model applied for simulating the P–C isotherms of the above-mentioned ZrFe₂ type hydrogen storage materials correspond to change in enthalpy (ΔH) and entropy (ΔS) of hydride formation. Several ZrFe₂ type materials as in above have been synthesized and their P–C isotherms, enthalpy and entropy change has been evaluated experimentally in order to have input data for simulation. A special software was developed to simulate the P–C isotherms using the said model. A close match between the experimentally observed and simulated P–C isotherms for the above said ZrFe₂ type alloys has been obtained.     

Effect of Co content on performance of LiAl1/3−xCoxNi1/3Mn1/3O2 compounds for lithium-ion batteries

Layered LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ (0  x  1/3) compounds were studied via the combination of computational and experimental approach. The calculated voltage curve of LiNi_1/3Al_1/3Mn_1/3O₂ compound is presented, indicating it is of great potential for a cathode material of lithium-ion batteries. Unfortunately, it was found that the LiNi_1/3Al_1/3Mn_1/3O₂ compound without impurity phase could not be synthesized via a sol–gel process. To obtain a layered compound without impurity phase, partial of Al is replaced by Co in LiNi_1/3Al_1/3Mn_1/3O₂ compound in this study. Layered LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ (0  x  1/3) compounds were synthesized via sol–gel reaction at 900 °C under a oxygen stream. Single phase of the LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ in 1/6  x  1/3 region could be prepared successfully. The discharge capacity and conductivity increased with an increase in the Co-substitution content. The enhancement of the conductivity and phase purity by the introduction of Co content shows profound influence on the performance of the LiAl_1/3−xCo_xNi_1/3Mn_1/3O₂ compounds.     

Stability of some ternary and quaternary CeNi5-based and PrNi5-based hydride systems

The Ce_1−xR_xNi_2.5Cu_2.5 (R = La,Pr; 0.8 x 0.3) and PrNi_5−xM_x (M = Cu, Fe; 0.5 x 2.5) alloys were investigated for their hydriding characteristics in the temperature range 0–70°C and hydrogen pressure range 0.01–50 atm. The nonlinear behaviour of unit cell volume vs x in Ce_1–xLa_xNi_2.5Cu_2.5 suggests that both size and electronic effects are involved. The partial replacement of Ce by La and Ni by Cu in CeNi₅ causes a substantial reduction in the hydrogen sorption pressures without significantly impairing its hydrogen capacity. It was observed that Fe is more effective than Cu in stabilizing PrNi₅-H₂. The high values of the molar entropy of hydrogen of the β-hydrides studied, S^β_H, are attributed to extensive hydrogen disorder in the interstitial sites of the host lattice. A linear correlation between the hydride decomposition pressures (or free energy) and the unit cell volume. V_c, of the host alloys was observed. This behavior is helpful in predicting the stabilities of new hydrides in a given substitutional alloy series.     

Electrochromic properties of lithiated Co-oxide (LixCoO2) and Ni-oxide (LixNiO2) thin films prepared by the sol–gel route

Layered Li_xCoO₂ and Li_xNiO₂ thin films (x1) were prepared by a peroxo wet chemistry route from Li(I), Co(II) and Ni(II) acetate precursors and the addition of H₂O₂. Structural changes during the processing of xerogel to final oxide were followed by X-ray diffraction and infrared spectroscopy. Electrochromic properties were determined with in-situ potentiodynamic, potentiostatic and galvanostatic spectroelectrochemical measurements. Single dipped films with composition Li_0.99Co_1.01O₂ or Li_0.94Ni_1.06O₂ exhibited stable voltammetric response in 1 M LiClO₄/propylene carbonate electrolyte after about 60 cycles. The total charge exchanged in a reversible charging/discharging cycle was about ±30 mC cm⁻² for Li_0.99Co_1.01O₂ and ±20 mC cm⁻² for Li_0.94Ni_1.06O₂ oxide films. Galvanostatic measurements showed that about 1/2 (x0.5) and 2/3 (x0.3) of Li⁺ ions could be reversibly removed from the structure of Li_0.99Co_1.01O₂ and Li_0.94Ni_1.06O₂ films, respectively. Practical applicability of Li_0.99Co_1.01O₂ and Li_0.94Ni_1.06O₂ oxide films was studied in electrochromic devices with WO₃(H⁺)Li⁺ormolyteLi_0.99Co_1.01O₂ and WO₃(H⁺)Li⁺ormolyteLi_0.94Ni_1.06O₂ configuration. The monochromatic transmittance T_s (λ=633 nm) of dark blue coloured devices was extremely low (T_s3%), whereas in bleached state the value reached around T_s70%.     

Effect of substituting Mm with La on the electrochemical performances of Co-free LaxMm1−x(NiMnSiAlFe)4.9 (x = 0–1) electrode alloys prepared by casting and rapid quenching

In order to enhance the electrochemical capacity of the Co-free AB₅-type electrode alloy, Mm in the alloys was substituted with La and Co-free La_xMm_1−x(NiMnSiAlFe)_4.9 (x = 0, 0.45, 0.75, 1.0) hydrogen storage alloys were prepared by casting and rapid quenching. The effects of the substituting Mm with La on the electrochemical performances of the as-cast and quenched alloys were investigated in detail. The obtained results show that substituting Mm with La can enhance markedly the capacities of the as-cast and quenched alloys. When the amount of substituting Mm with La, x increased from 0 to 1.0, the maximum capacity of the as-cast alloys at 0.2C rate increased from 273.45 to 304.47 mAh g⁻¹, and the capacity retaining rate (R_h) increased from 59.16 to 59.86%. The capacity of the as-quenched alloys with a quenching rate of 10 m s⁻¹ increased from 236.83 to 300.31 mAh g⁻¹, and the capacity retaining rate (R_h) decreased from 78.69 to 62.29%. The substituting Mm with La had an insignificant effect on the activation capabilities of the as-cast and quenched alloys.     

Phase transitions and phase decomposition of La1−xSrxCoO3−δ in low oxygen partial pressures

High-temperature X-ray diffraction has been used to investigate the phase stability of lanthanum strontium cobalt oxide (LSC) for a range of materials with the formula La_1−xSr_xCoO_3−δ (x = 0.7, 0.4, and 0.2). The stability of LSC increases with La content in low oxygen partial pressures at high temperature. Oxygen vacancy ordering has been observed for all three compositions in either low oxygen pressure or under reducing gas, as evidenced by the formation of the brownmillerite phase. The crystal structure of the vacancy-ordered phase was determined using Rietveld analysis of synchrotron X-ray diffraction data. The decomposition products under low oxygen pressure and in reducing conditions have been identified and characterized, including the phase transition and thermal expansion of the primary decomposition products, LaSrCoO₄ and LaSrCoO_3.5.     

Cycle characterizations of LiMxMn2−xO4 (M=Co, Ni) materials for lithium secondary battery at wide voltage region

LiM_xMn_2−xO₄ (M=Co, Ni) materials have been synthesized by a melt-impregnation method using γ-MnOOH as the manganese source. Highly crystallized LiM_xMn_2−xO₄ compounds were synthesized at a calcination temperature of 800°C for 24 h in air. All compounds show a single phase except for LiNi_0.5Mn_1.5O₄ based on the X-ray diffraction (XRD) diagram. With the increase of the doping content from 0.1 to 0.5, the capacity of doping materials decreases mainly in the 4 V region.

Although LiM_0.5Mn_1.5O₄ (M=Co, Ni) compound shows a small capacity in the (3+4) V region compared with parent LiMn₂O₄, it is a very effective material in reducing capacity loss in the 3 V region that is caused by the Jahn–Teller distortion. The doping of Co and Ni ions in the LiMn₂O₄ cathode material promotes the stability of this structure and provides an excellent cyclability.