0.15 μm T-shaped gate fabrication for GaAs MODFET using phaseshift lithography

A new fabrication process of GaAs MODFETs with 0.15 micron T-shaped gate has been developed by using phase shift lithography. Sub-quarter micron footprints of T-shaped gates are defined as line patterns by PEL (pattern-edge line) method using chemically stable positive photoresist. Parasitic capacitances such as C_gs and C_gd are also reduced by the air-gap incorporated in the present process. An implemented GaAs MODFET exhibited the NF of 0.36 dB and the gain of 11.5 dB at the frequency of 12 GHz     

A full W-band low noise amplifier module for millimeter-wave applications

A full W-band Low Noise Amplifier (LNA) Module is designed and fabricated in this letter. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz , has a small signal gain above 21 dB. The noise figure is lower than 5dB throughout the entire W-band (below 3 dB from 89 to 95GHz) at a room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low dc power consumption     

Low-frequency noise behavior of 0.15-μm gate-lengthlattice-matched and lattice-mismatched MODFETs on InP substrates

Experimental data are presented on equivalent gate noise voltage from 1 to 10⁵ Hz obtained from lattice-matched and strained InGaAs quantum-well modulation-doped field effect transistors (MODFETs). In both types of devices excess generation-recombination (g-r) noise is observed at or below 100 Hz above an `apparent' background 1/f noise with spectral intensity ranging from 0.5×10^-17 to 2×10^-17 V²-Hz^-1-cm² at 1 Hz. These results are comparable to those reported by S.M.J. Liu et al. (1986) for the pseudomorphic MODFETs     

Monolithic V-band frequency converter chip set development using0.2 μm AlGaAs/InGaAs/GaAs pseudomorphic HEMT technology

Monolithic approaches of the development to V-band frequency converters have the advantages of lighter weight and lower cost over conventional hybrid approaches for high volume insertions into satellite communication systems. This paper presents the design, fabrication, and performance of a monolithic V-band frequency converter chip set using 0.2 μm AlGaAs/InGaAs/GaAs pseudomorphic HEMT technology. This chip set consists of three monolithic macrocells and a microcell: an upconverter, a downconverter, and a frequency multiplier for LO signal. A monolithic balanced amplifier microcell is also used to form the LO chain. Individual components, including amplifiers, mixer, and frequency doublers are also described. The superb measured results obtained from this chip set show great promise of the MMIC insertions for the system applications, and represent state-of-the-art performance of MMIC at this frequency     

High-stability 1.5 μm external-cavity semiconductor lasers forphase-lock applications

Applications using phase-locked semiconductor lasers, such as homodyne detection, require lasers with narrow linewidth and high-frequency stability. The design and operating characteristics of two 1.5 μm external-cavity semiconductor lasers built for such applications are described. The measured beat linewidth is 4 kHz, and the spectral density of relative frequency noise deviates significantly from the intrinsic white spectrum only at frequencies below 4 kHz. It is estimated that this frequency jitter will induce approximately 1.1° RMS phase error in a second-order homodyne optical phase-lock loop that is optimized for the present beat linewidth     

Optimization of implant anneals to improve transistor performancein a 0.15 μm CMOS technology

The impact of including a rapid thermal anneal step after the extension implants is examined for a 0.15 μm CMOS process. SIMS data will verify that shallower junctions can be obtained with only a single anneal cycle after the source-drain implants, implying that transient enhanced diffusion is minimal for this technology. Further, transistor data indicates that improved CMOS device performance can be obtained without the extension anneal cycle     

0.15 μm passivated InP-based HEMT MMIC technology with highthermal stability in hydrogen ambient

The effect of thermal stress on InP-based HEMT MMIC with Ti-Pt-Au gate metallization in N₂ and H₂ forming gas is reported. The importance of stabilization bake at high temperature under nitrogen to stabilize the threshold voltage and device parameters is demonstrated. In addition, through thermal stress at 270°C with hydrogen ambient, we found, that our InP based HEMT devices and MMICs with Ti-Pt-Au gate metallization are not sensitive to hydrogen. To our knowledge, this is the first demonstration of hydrogen insensitive FET's and MMIC's with Ti-Pt-Au gate metallization     

InGaAsPN-InP-based photodetectors for long wavelength(λ>1.65 μm) applications

We demonstrate InGaAsPN p-i-n photodetectors lattice-matched to InP substrates with cutoff wavelengths larger than 1.65 μm. The narrow bandgap InGaAsPN absorption layers were grown by gas source molecular beam epitaxy using an RF plasma nitrogen source. Optical absorption spectra reveal that InGaAsPN with 5% P and 2.8% N has a cutoff wavelength λ_CO=1.90 μm Background doping in the absorption layer for a detector with 1.5% N and 5% P is reduced from (1.5±0.5)×10¹⁷ cm^-3 for the as-grown device, to (5±0.5)×10¹⁶ cm^-3 for a thermally annealed device. The unintentional high background doping is due to N-H bond formation or local strain induced defects. Spectral response measurements indicate that λ_CO=1.85 μm is achieved for detectors annealed at 800°C with 2% N and 5% P in the InGaAsPN absorption layer, suggesting that annealed InGaAsPN alloys are promising for use in detectors with response in the near and mid-IR wavelength spectral range     

Characterization of polysilicon resistors in sub-0.25 μm CMOSULSI applications

The characteristics of polysilicon resistors in sub-0.25 μm CMOS ULSI applications have been studied. Based on the presented sub-0.25 μm CMOS borderless contact, both n⁺ and p⁺ polysilicon resistors with Ti- and Co-salicide self-aligned process are used at the ends of each resistor. A simple and useful model is proposed to analyze and calculate the essential parameters of polysilicon resistors including electrical delta W(ΔW), interface resistance R_interface, and pure sheet resistance R_pure . This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-0.25 μm CMOS technology     

Parametric oscillation at 3.2 μm in KTP pumped at 1.064 μm

The author reports the stable generation of 0.2-W average power IR pulses around 3.2 μm from the KTP parametric oscillator pumped by the Nd:YAG laser at 1.064 μm. In addition, improved Sellmeier's equations, which correctly predict almost all of the nonlinear experiments thus far reported, are presented, together with the absolute values of d₃₁ and d₃₂     

Analog MMICs for millimeter-wave applications based on a commercial0.14-μm pHEMT technology

This paper describes recent results obtained from the monolithic-microwave integrated-circuit design activity at Chalmers University, Goteborg, Sweden. The goal is to design all circuits needed for the front end of a 60-GHz wireless local area network and to build various system demonstrators. Some recent experimental results from this activity like different 60-GHz amplifiers, a general-purpose IF amplifier, a 60-GHz resistive mixer, and frequency multipliers are reported in this paper. Parameters such as the gain, conversion loss, noise figure, dc-power dissipation, as well as the model used in the simulations are reported and discussed     

Coherent laser radar at 2 μm using solid-state lasers

The development of a coherent laser radar system using 2-μm Tm and Tm, Ho-doped solid-state lasers, which is useful for the remote range-resolved measurement of atmospheric winds, aerosol backscatter, and differential absorption lidar (DIAL) measurements of atmospheric water vapor and CO₂ concentrations, is described. Measurements made with the 2-μm coherent laser radar system, advances in the laser technology, and atmospheric propagation effects on 2-μm coherent lidar performance are discussed. Results include horizontal atmospheric wind measurements to >20 km. vertical wind measurements to >5 km, near-horizontal cloud returns to 100 km, and hard target (mountainside) returns from 145 km     

Low-threshold-current-density 1.5 μm lasers using compressivelystrained InGaAsP quantum wells

A low-threshold current density (J_th) of 140 A/cm² for broad-area 1.5-μm semiconductor lasers with uncoated facets is demonstrated at a cavity length of 3.5 mm. This was achieved by the use of a single InGaAsP quantum well (QW) of 1.8% compressive strain inside a step-graded InGaAsP waveguide region. Low-cavity losses of 3.5 cm^-1 and a relatively wide quantum well as compared to InGaAs wells of equivalent strain contribute to this high performance. Double QW devices of 2 mm length showed threshold current densities of 241 A/cm². Quaternary single and double QWs of similar width but only 0. 9% strain gave slightly higher threshold current density values, but allowed growth of a 4 QW structure with a J_th of 324 A/cm² at L=1.5 mm     

Long-haul soliton transmission at 1.3 μm using distributed Ramanamplification

10 Gb/s single channel soliton transmission over more than 10000 km in a standard communication fiber with distributed Raman amplification has been demonstrated in a recirculating fiber loop setup. It has been found that the Gordon-Haus timing jitter becomes the main limiting factor, provided that the generation of dispersive waves due to polarization mode dispersion has been minimized by adjusting the polarization state of the signal     

Multipass diode-pumped Nd:YAG optical amplifiers at 1.06 μm and1.32 μm

We have built two versions of a diode-pumped Nd:YAG amplifier using a compact multipass confocal geometry with a fiber-coupled input. This confocal geometry provided efficient power and high gain in a volume of approximately 100 cm³. When pumped with a commercially mature 2 W 809 nm laser diode, the 1.06 μm version produced 460 mW and a small signal gain of 51 dB. The 1.32 μm version produced 170 mW and a small signal gain of 29 dB. Such an efficient amplifier, especially at 1.32 μm would be useful as a power booster in fiber optic telecommunications     

A low-power GaAs front-end IC with current-reuse configurationusing 0.15-μm-gate MODFETs

We have developed a novel current-reuse configuration of a front-end integrated circuit (IC), where the current can be reused in the whole circuit blocks that are a low-noise amplifier, local amplifier, and mixer. The power dissipation of the front-end IC is reduced by the factor of three as compared to conventional front-end ICs. Excellent RF performance such as conversion gain of 30 dB and noise figure of 1.6 dB at 1.5 GHz is attained under the conditions of the supply voltage and current of 3.6 V and 3 mA, respectively     

Hybrid ring coupler for W-band MMIC applications using MEMS technology

The hybrid ring coupler was designed and fabricated on a GaAs substrate using surface micromachining techniques, which adopted dielectric-supported air-gapped microstrip line (DAML) structure. The fabrication process of DAML is compatible with the standard monolithic microwave integrated circuit (MMIC) techniques, and the hybrid ring coupler can be simply integrated into a plane-structural MMIC. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of 3.57 /spl plusmn/ 0.22dB and the transmission loss of 3.80 /spl plusmn/ 0.08dB across the measured frequency range of 85 to 105GHz. The isolation characteristics and output phase differences are -34dB and 180/spl plusmn/1/spl deg/, at 94GHz, respectively.     

0.1-µm Gate-length pseudomorphic HEMT's

AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMT's) with a gate length of 0.1 µm have been successfully fabricated. The HEMT's exhibit a maximum transconductance of 540 mS/mm with excellent pinch-off characteristics. A maximum stable gain (MSG) as high as 18.2 dB was measured at 18 GHz. At 60 GHz the device has demonstrated a minimum noise figure of 2.4 dB with an associated gain of ∼6 dB. These are the best gain and noise results reported to date for HEMT's.     

High gain wideband amplifier IC using 0.7 μm GaAs MESFETtechnology

A high gain wideband differential amplifier with a new circuit configuration is proposed and monolithically integrated by using 0.7 μm-gate GaAs MESFET IC technology. The fabricated IC exhibited gain of 16.7 dB and bandwidth of 3.2 GHz. A gain twice that of a conventional differential GaAs-MESFET amplifier was achieved with small bandwidth degradation     

1.3 μm fluoride fibre laser

Laser action has been achieved in the 1.33-1.34 μm range using an Nd³⁺-doped fluorozirconate glass multimode fibre. These operating wavelengths are the closest to the important telecommunications channel at 1.3 μm of any reported for a glass laser