IC抗辐射加固的方法

本文主要介绍电离辐射引起的ＣＭＯＳ集成电路的失效机理，并结合我所研制的Ｌ５４ＨＣＴ型抗辐射加固电路，提出了抗辐射加固技术的方法。     

LC4715抗辐射专用门阵列译码器

本文介绍了国产大规模抗辐射专用门阵译码电路的设计及研制过程，并给出部分设计参数和工艺参数及抗辐射指标。     

航天集成电路技术发展及思考

航天集成电路技术是航天工程的核心基础技术,其长期持续发展是我国向航天强国迈进的关键。本文介绍了国际集成电路发展情况、航天集成电路发展趋势、美欧等国家航天集成电路发展思路,以及我国航天集成电路发展现状,阐述了对我国航天集成电路发展的几点思考。     

起重机无损检测技术探讨

起重机械作为一种空间运输工具,其在建筑领域及工业领域发挥着十分重要的作用。起重机械作为一种大型特种机械设备,其内部结构十分复杂,起重机其种类较多,不同类型具备不同的结构特征。起重机械运行的安全与质量直接关系着工程施工安全及效益,为确保起重机械质量,需要进行无损检测以确保起重机运行的安全性及持续性,实现工程效益。     

利用人工神经网络进行无损检测的探讨

无损检测的问题可视为特殊的模式识别的问题，而人工神经网络是处理模式识别最有效的技术和方法之一。本文探讨用人工神经网络的方法进行无损检测，并特别给出了用误差反向传播网络进行无损检测的方法。     

新型RHBD抗多节点翻转锁存器设计

在纳米数字锁存器中,多节点翻转(multiple-node upset,MNU)正持续增加.虽然现有基于互连单元的抗辐射加固设计(radiation hardening by design,RHBD)的锁存器可以恢复所有MNU,但是需要更多的敏感节点和晶体管.为了在获得高可靠性的同时降低硬件开销,提出利用辐射翻转机制进...     

微型计算机的抗辐射加固

本文介绍了国外微型计算机的抗辐射加固的一般情况．为方便起见，首先简单介绍了电子器件核辐射产生的五大效应，即位移效应、电离效应、瞬时效应、电磁脉冲效应和单粒子效应，尔后介绍了电子器件抗辐射加固的概况以及抗辐射加固的微型计算机．     

无损检测技术的应用及前景

本文针对应用激光、超声和射线等方法的无损检测技术进行了阐述。在跟踪和预测无损检测技术未来发展动态的基础上,说明了无损检测技术在未来的工业检测领域中的重大意义。     

基于半导体硅片的容栅千分传感器的设计

容栅千分传感器广泛应用于位移测量中,设计的容栅千分传感器,将普通容栅传感器在线路板上的刻线划分移植到了半导体硅片上,利用了半导体的工艺技术,实现刻线划分的高精度、高密度,从而达到普通线路板无法达到的精度,将容栅传感器的分辨力提高至0.001 mm.     

Automatic testing of MMIC wafers

Microwave probes are used extensively for linear and nonlinear characterization of microwave devices on wafer and are commercially available for use at frequencies up to 65 GHz. An on-wafer noise measurement test system, for discrete devices, is now commercially available and on-wafer power measurement techniques are emerging slowly. These probes are also getting more recognition for the testing of packaged chips, packages, and modules. More accurate calibration techniques and their on-wafer validation are being developed. Automatic testing of MMIC wafers, using an integrated test system, is a key requirement for the development of low-cost IC production.     

Precision passive mechanical alignment of wafers

A passive mechanical wafer alignment technique, capable of micron and better alignment accuracy, was developed, fabricated and tested. This technique is based on the principle of elastic averaging: It uses mating pyramid (convex) and groove (concave) elements, which have been previously patterned on the wafers, to passively align wafers to each other as they are stacked. The concave and convex elements were micro machined on 4-in (100) silicon wafers using wet anisotropic (KOH) etching and deep reactive ion etching. Submicron repeatability and accuracy on the order of one micron were shown through testing. Repeatability and accuracy were also measured as a function of the number of engaged elements. Submicrometer repeatability was achieved with as little as eight mating elements. Potential applications of this technique are precision alignment for bonding of multiwafer MEMS devices and three-dimensional (3-D) interconnect integrated circuits (ICs), as well as one-step alignment for simultaneous bonding of multiple wafer stacks. Future work will focus on minimizing the size of the elements.     

Modeling radiative properties of nanoscale patterned wafers

Temperature nonuniformity in rapid thermal processing of wafers is a critical problem facing the semiconductor industry. One cause of the problem is the nonuniform absorption of thermal radiation in patterned wafers where the optical properties vary across the wafer surface. This paper presents a parametric study of the radiative properties of patterned wafers, considering the effect of temperature, wavelength, and polarization. The finite-difference time-domain (FDTD) method is employed to examine the effe...     

Gold metallizations for eutectic bonding of silicon wafers

Gold eutectic bonding of silicon wafers is a good candidate for wafer level vacuum packaging of vibrating MEMS: in this paper we investigated several e-beam evaporated metallizations stacks including a titanium adhesion layer, an optional diffusion barrier (Ni or Pt) and a gold film for eutectic bonding on Si and SiO₂/Si wafers. Interdiffusion in the multilayers for annealing temperatures (380–430°C) larger than the Au–Si eutectic temperature (363°C) and times corresponding to a bonding process was characterized by RBS, roughness and resistivity measurements. Au/Pt/Ti and Au/Ti/SiO₂ were found to have the best characteristics for bonding. This was confirmed by bonding experiments.

     

Gold metallizations for eutectic bonding of silicon wafers

Gold eutectic bonding of silicon wafers is a good candidate for wafer level vacuum packaging of vibrating MEMS: in this paper we investigated several e-beam evaporated metallizations stacks including a titanium adhesion layer, an optional diffusion barrier (Ni or Pt) and a gold film for eutectic bonding on Si and SiO₂/Si wafers. Interdiffusion in the multilayers for annealing temperatures (380–430°C) larger than the Au–Si eutectic temperature (363°C) and times corresponding to a bonding process was characterized by RBS, roughness and resistivity measurements. Au/Pt/Ti and Au/Ti/SiO₂ were found to have the best characteristics for bonding. This was confirmed by bonding experiments.     

压电智能夹层及其特性分析

压电智能夹层可以有效地解决压电自诊断系统中直接使用压电片引起的弊端.通过适当改进当前的柔性印刷线路工艺制作出的压电智能夹层,不仅具有柔性印刷线路的特点,而且,应用在结构健康监测系统中还有其他一些独特的优越性能.并利用压电智能夹层进行了初步的拉伸载荷识别,同压电片相比,识别效果更明显.     

Defect detection in patterned wafers using anisotropic kernels

Wafer defect detection often relies on accurate image registration of source and reference images obtained from neighboring dies. Unfortunately, perfect registration is generally impossible, due to pattern variations between the source and reference images. In this paper, we propose a defect detection procedure, which avoids image registration and is robust to pattern variations. The proposed method is based on anisotropic kernel reconstruction of the source image using the reference image. The source and reference images are mapped into a feature space, where every feature with origin in the source image is estimated by a weighted sum of neighboring features from the reference image. The set of neighboring features is determined according to the spatial neighborhood in the original image space, and the weights are calculated from exponential distance similarity function. We show that features originating from defect regions are not reconstructible from the reference image, and hence can be identified. The performance of the proposed algorithm is evaluated and its advantage is demonstrated compared to using an anomaly detection algorithm.