体部伽玛刀联合热化疗治疗中晚期肝癌25例临床观察

目的探讨利用体部伽玛刀联合全身热化疗和微量泵化疗对中晚期原发性肝癌进行综合治疗的疗效。方法入院后经检查无全身热疗及化疗禁忌症晚期肝癌患者25例,全身热疗时予氟尿嘧啶1g、羟基喜树碱10mg、奥沙利铂100mg;以后予奥沙利铂100mg/d,8d,静脉滴注;热化疗后第2d起予氟尿嘧啶0.25g/d,14d;羟基喜树碱2mg/d,9d。热化疗3d后进行体部伽玛刀治疗,50～65%的等剂量曲线包绕计划靶区PTV,单次剂量3.2～4.0Gy,10～12次,总剂量为36～44Gy。其中化疗泵治疗间隔2周重复,共4～6周期;全身热疗1～3次,于每次化疗第1天进行。热化疗及伽玛刀治疗结束后分别观察不良反应和近期疗效。结果部分缓解(PR)20例;1年局部病变无进展率为56%(14/25)。1年生存率为76%(19/25),2年生存率40%(10/25)。全身热疗中6例出现下肢或腹部局部皮肤红斑,2例出现小水泡;肝脏急性不良反应Ⅰ级1例。结论伽玛刀联合全身热化疗治疗肝细胞癌安全可靠,有利于提高疗效。     

Inhibiting effect of thymogen on the development of tumors of the esophagus and forestomach induced by N-nitrososarcosine ethyl ester in rats

Immunostimulating synthetic peptide thymogen being an analog of the thymus polypeptide drug thymalin was studied for its effect on carcinogenesis of the esophagus and forestomach in male rats. Rats received N-nitrososarcosine ethyl ester (NSEE) per os in the daily dose of 100 mg/kg of body weight during 8 weeks. After cessation of the carcinogen administration rats were treated with thymogen (the daily dose of 10 micrograms per rat) or immune-inactive polypeptide drug pulmolin from the alveolar tissue of lung (the daily dose of 0.5 mg per rat) during the following 32 weeks. Animals were killed 40 weeks after the experiment beginning. NSEE induced the esophagus and forestomach tumours, mainly papillomas and rarely carcinomas, practically in all rats, more than 5 tumours per rat, on the average. Thymogen decreased the tumour incidence by 12% and made tumour multiplicity 1.7 times as low. Pulmolin did not influence development of these tumours.     

Changes in the chemotherapy sensitivity of leukemia L1210 cells during the development of diazan resistance

L 1210 leukemia strain resistant to diazan (L 1210/D1) was studied for its drug sensitivity in comparison with the parent strain. The resistant strain exhibited significantly higher sensitivity to nine drugs: dopan, sarcolysine, apirazidin, cyclophosphane, 6-mercaptopurine, thiophosphamide, rubomycin, vinblastine and vincristine. L 1210/D1 gained cross resistance to four drugs: 1-(2-chloroethyl)-3-(2, 6-dioxy-3-piperidyl)-1-nitrosourea, methotrexate, 5-fluorouracil and ftorafur. The resistant strain sensitivity remained unchanged (in comparison with the parent strain) to seven drugs: degranol, prospidin, nitrosomethylurea, chlorozotocin, deazauridine, bleomycin and L-asparaginase (crasnitine).     

姜黄素对大鼠角膜碱烧伤的作用

目的:探讨不同浓度姜黄素在大鼠角膜碱烧伤中的作用。方法:建立SD大鼠角膜碱烧伤模型,大鼠分为4组(第1至4组),对照组(第1组)只给予羧甲基纤维素钠,第2,3,4组分别给予100mg/kg BW2、00mg/kg BW及400mg/kg BW姜黄素。在碱烧伤后第3,7,14d用硫代巴比土酸(TBA)法测丙二醛(MDA)含量,化学比色法检测角膜超氧化物歧化酶(SOD)活力。结果:第1,2组之间和第3,4组之间的SOD,MDA无统计学意义。第1,2组与第3,4组相比,后者SOD活力明显增加,MDA含量显著减少。结论:姜黄素对大鼠角膜碱烧伤具有保护作用且与姜黄素浓度有关。     

THE STUDY OF Si(100)AND(111)SURFACES AND Ni MOLECULAR BEAM EPITAXY ON THEM BY RHEED

Clean Si(100)and(111)surfaces produced by the Ar~+ ion bombardment and high temperatureanealing techniques,and the epitaxial growth of Ni on them at room temperatue using molecular beammethod are studied by reflection high energy electron diffraction(RHEED).On the basis of experimentresults,Si(111)7×7 and its negative zone RHEED pattern,Si(100)2×1,Si(111)19~(1/2)×19~(1/2)Ni and Si(100)4×2Ni structures have been obtained,and the lattice structure of nickel silicides produced by epitaxy withlow growth rate(0.15-0.5per min)is the same as that of silicon substrate.     

氟达拉滨联合利妥昔单抗治疗高龄慢性淋巴细胞白血病

目的考察氟达拉滨联合治疗高龄慢性淋巴细胞白血病患者的有效性和安全性。方法应用氟达拉滨联合利妥昔单抗方案治疗11例患者,根据患者情况分次给药,25~30mg/m2隔日或每周1~2次静脉注射,或口服剂型10mg~20mg/d连续用药,观察患者应用氟达拉滨过程中及其后的不良反应及疗效。结果全组11例患者CR+PR为10例,其中CR6例,PR4例,NR1例。不良反应主要为粒细胞及血小板减少等骨髓抑制,未出现严重感染,无化疗相关死亡。结论氟达拉滨联合利妥昔单抗治疗高龄慢性淋巴细胞白血病具有较高的安全性和有效性。     

Solar cell degradation experiments on the Lincoln laboratory LES-4 and LES-5 satellites

The Lincoln Laboratory satellites LES-4 and LES-5 each carry solar cell experiments consisting of the following. VocMeasurement of 10 Ω . cm silicon cell with 30-mil cover slide. IscMeasurement of 10 Ω . cm silicon cell with 30-mil cover slide. IscMeasurement of 10 Ω . cm silicon cell with 6-mil cover slide. IscMeasurement of two CdTe thin-film cells (LES-4 only). IscMeasurement of two CdS thin-film cells (LES-5 only). LES-4 was orbited in December 1965 in a highly elliptical orbit with an 18 000-mi apogee and a 100-mi perigee; LES-5 was injected into a quasi-synchronous orbit in July 1967. In the LES-5 experiment, the Si cells exhibit an Iscdegradation of eight percent per year plus an initial short term degradation of four percent; Vocis relatively unaffected. The CdS cells have an Iscdegradation of 20 percent per year plus an initial degradation of five percent. In the LES-4 experiment, the Si cell with the 6-mil cover slide shows two rates of degradation, with the break point occurring at about 100 days; the cell with the 30-mil cover slide shows substantially less degradation. After 700 days, the short-circuit currents of these two cells are 60 percent and 78 percent of their initial AMO values. One CdTe cell has decayed to 38 percent of its initial AMO value after 700 days; the second sample gives anomalous results. In each experiment AM0 to AM1 short-circuit current ratios of approximately 1.09 were noted.     

Design, Fabrication, and Evaluation of 2 and 3-Bit GaAs MESFET Analog-to-Digital Converter IC's

The analog-to-digital converter (A/D) is a critical component of a signal processing system. GHz-rate A/D's will be required in many future systems. While Si bipolar based A/D's can easily meet 4-6-bit resolution requirements, excessive power dissipation (1 W per bit) limits their operation to 100-400-MHz sampling rates. Recently, GaAs MES-FET's have demonstrated high frequency operation with relatively low power dissipation. This paper describes the design of 2- and 3-bit A/D's using GaAs MESFET's. Monolithic integrated A/D circuits were fabricated and successfully operated at gigahertz sampling rates. This sampling rate is the highest reported for any AD technology at room temperature. The power dissipation is 150-200 mW per bit. With further improvements in comparator sensitivity, the design can be extended to 4-bit A/D for GHz rate operation.     

Hybrid dry-wet chemical etching process for via holes for galliumarsenide MMIC manufacturing

Through the wafer via-hole connections for monolithic microwave integrated circuits (MMIC) manufacturing have been developed by combining reactive ion etching (RIE) and wet chemical spray etching processes for 100-μm-thick gallium arsenide wafers. The dry process is based on the use of SiCl₄-BCl₃-Cl₂ and BCl₃-Cl₂ gas mixtures at room temperature is a reactive ion etcher. The etching parameters are optimized for anisotropic etching, initially, followed by slightly isotropic etching. To remove the residual `lip' and surface roughness, following reactive ion etching, a dynamic wet chemical spray etching based on H₃PO₄-H₂O₂-H₂O at 45°C is used. The combined dry-wet etching approach is used to fabricate <120-μm diameter via-holes in 100-μm-thick GaAs substrates with a wider process latitude. With this process, the authors have achieved >95 percent yield across 3-in wafers. Metallized via-hole contacts to power FET chips show a contact resistance <20 mΩ per via for 5-μ-thick selective gold plating     

Chemical etching of ZnSe crystals

Our report describes a newly developed chemical etchant suitable for producing mirror-like ZnSe surfaces. A mirror surface without any scratch obtained through lapping and polishing was produced by etching in a KMnO₄(100 mg)/ H₂SO₄(10 ml)/H₂O(40 ml) solution. The etching rate of ZnSe used in this case was about 1 um/min. The etchant could be applied to crystals with (lll)A, (lll)B, and (100) faces and the etching rate similar for each face. The value of the full width at half maximum in the x-ray rocking curve decreased by half after etching with the KMnO₄-system etchant.     

Printed Circuit Motors for High-Speed Incrementing of Inertial and Dissipative Loads

As a high-speed incrementer, the printed circuit motor, while less accurate than a detented incrementer, provides unusual flexibility and reliability with relatively simple input controls. This paper presents an analysis of printed circuit motor response to a unit step of input voltage for incrementing purely inertial and dissipative loads. Incrementing is stable and quite accurate if sufficient friction damping is provided. Input power requirements can be accurately predicted in terms of motor and load parameters, increment displacement, and increment time. Average power during an increment varies approximately as J2, ?2, and (1/T)4. Armature heating dictates maximum input power and incrementing rate. With external cooling and 120 watts average input power, a combined load of 0.009 oz-in-sec2 moment of inertia, 10.8 oz-in/100 rpm eddy current damping, and 20 oz-in friction damping was incremented at a continuous rate of 150 steps/sec for 5° increments with ±6 per cent accuracy.     

Experiments on real-time 1-Gb/s packet transmission using MLD-based signal detection in MIMO-OFDM broadband radio access

This paper presents experimental results on real-time packet transmission of greater than 1 Gb/s using 4-by-4 multiple-input-multiple-output (MIMO) multiplexing and maximum-likelihood detection (MLD)-based signal detection with a decreased level of computational complexity in orthogonal frequency-division multiplexing (OFDM) radio access. We apply our previous algorithm called adaptive selection of surviving symbol replica candidates (ASESS) based on the maximum reliability in MLD employing QR decomposition and the M-algorithm (QRM-MLD) to reduce the extremely high level of computational complexity in the conventional MLD. The experimental results using multipath fading simulators are in good agreement with the computer simulation results. The loss in the required received signal energy per bit-to-background noise power spectrum density ratio (E/sub b//N/sub 0/) is suppressed to within approximately 1-2 dB. Therefore, through experiments, we demonstrate that the QRM-MLD employing ASESS is very beneficial in reducing the influence of hardware implementation loss, as well as in decreasing the required received E/sub b//N/sub 0/. We further show that the extremely high-speed real-time packet transmission of greater than 1 Gb/s in a 100-MHz channel bandwidth (i.e., 10 bit/s/Hz) is achieved at the average received E/sub b//N/sub 0/ per receiver antenna of approximately 12 dB using 16QAM modulation and turbo coding with the coding rate of 8/9 in 4-by-4 MIMO multiplexing.     

Interleaved concatenated coding for the turbulent atmosphericdirect detection optical communication channel

The performance of two concatenated coding systems using a K =3, R=1/2 convolutional inner code and a Reed-Solomon (RS) (15, 9) or (15, 7) outer code was measured over a 5.76-km-long atmospheric direct detection optical communication channel. Inner code interleaving of 100 μs combined with outer code interleaving of 240 bits (60 RS symbols) was found to be sufficient to obtain a decoded BER of less than 10^-6 under conditions of moderate channel turbulence and an average of 6-10 detected photons per channel bit     

Design, fabrication, and evaluation of 2- and 3-bit GaAs MESFET analog-to-digital converter IC's

the analog-to-digital converter (A/D) is a critical component of a signal processing system. GHz-rate A/D's will be required in many future systems. While Si bipolar based A/D's can easily meet 4-6-bit resolution requirements, excessive power dissipation (1 W per bit) limits their operation to 100-400-MHz sampling rates. Recently, GaAs MESFET's have demonstrated high frequency operation with relatively low power dissipation. This paper describes the design of 2- and 3-bit A/D's using GaAs MESFET's. Monolithic integrated A/D circuits were fabricated and successfully operated at gigahertz sampling rates. This sampling rate is the highest reported for any A/D technology at room temperature. The power dissipation is 150-200 mW per bit. With further improvements in comparator sensitivity, the design can be extended to 4-bit A/D for GHz rate operation.     

A 0.4-μm CMOS 10-Gb/s 4-PAM pre-emphasis serial link transmitter

A serial link transmitter fabricated in a large-scale integrated 0.4-μm CMOS process uses multilevel signaling (4-PBM) and a three-tap pre-emphasis filter to reduce intersymbol interference (ISI) caused by channel low-pass effects. Due to the process-limited on-chip frequency, the transmitter output driver is designed as a 5:1 multiplexer to reduce the required clock frequency to one-fifth the symbol rate, or 1 GHz. At 5 Gsym/s (10 Gbis), a data eye opening with a height >350 mV and a width >100 ps is achieved at the source. After 10 m of a copper coaxial cable (PE142LL), the eye opening is reduced to 200 mV and 90 ps with pre-emphasis, and to zero without filtering, The chip dissipates 1 W with a 3.3-V supply and occupies 1.5×2.0 mm² of die area     

A Low Power, Scalable, DAC Architecture for Liquid Crystal Display Drivers

The proliferation of portable electronic products such as cellular telephones and personal digital assistants has created a high demand for small format liquid crystal displays (LCD) with increasing bit resolution. The electronic drivers for these display applications must adhere to stringent power and area budgets. This paper describes a low-power, area efficient, scalable, digital-analog conversion (DAC) integrated circuit architecture optimized for driving small format LCDs. A 12 channel, 9-bit DAC driver based on this architecture, implemented in 0.5 $mu$ m CMOS technology and suitable for 1/4 VGA resolution displays, exhibited a 2 MSPS conversion rate, 252 $muhbox{W}$ power dissipation per channel using a 5 V supply, and a per DAC die area of 0.042 $hbox{mm}^{2}$. This performance sets a new standard for DAC display drivers in joules per bit areal density at less than 0.58 pJ per bit per $hbox{mm}^{2}$ .      

Regulating Fe Aggregation State via Unique Fe?N?V Pre-Coordination to Optimize the Adsorption-Catalysis Effect in High-Performance Lithium-Sulfur Batteries

Lithium-sulfur batteries (LSBs) suffer from uncontrollable shuttling behavior of lithium polysulfides (LiPSs: Li₂S_x, 4 ≤ x ≤8) and the sluggish reaction kinetics of bidirectional liquid-solid transformations, which are commonly coped through a comprehensive adsorption-catalysis strategy. Herein, a unique Fe N V pre-coordination is introduced to regulate the content of “dissociative Fe³⁺” in liquid phase, realizing the successful construction of N-doped micro-mesoporous “urchin-like” hollow carbon nanospheres decorated with single atom Fe-N₄ sites and VN nanoparticles (denoted as SA-Fe/VN@NMC). The strong chemisorption ability toward LiPSs and catalyzed Li₂S decomposition behavior on VN, along with the boosted reaction kinetics for sulfur reduction on SA-Fe sites are experimentally and theoretically evidenced. Moreover, the nanoscale-neighborhood distribution of VN and SA-Fe active sites presents synergistic effect for the anchoring-reduction-decomposition process of sulfur species. Thus SA-Fe/VN@NMC presents an optimized adsorption-catalysis effect for the whole sulfur conversion. Therefore, the SA-Fe/VN@NMC based Li-S cells exhibit high cyclic stability (a low decay of 0.024% per cycle over 700 cycles at 1 C, sulfur content: 70 wt%) and considerable rate performance (683.2 mAh g⁻¹ at 4 C). Besides, a high areal capacity of 5.06 mAh cm⁻² is retained after 100 cycles under the high sulfur loading of 5.6 mg cm⁻². This work provides a new perspective to design the integrated electrocatalysts comprising hetero-formed bimetals in LSBs.     

Sn~(4+)替代Nb~(5+)对Bi_2(Zn_(1/3)Nb_(2/3))_2O_7陶瓷性能的影响

采用固相反应法制备了Bi2(Zn1/3Nb2/3)2O7(BZN)微波陶瓷,并借助XRD、SEM及LCR4284测试仪,研究了Sn4+取代Nb5+对BZN陶瓷显微结构和介电性能的影响。结果表明:随着Sn4+替代量的增加,微观形貌中出现棒晶;选取20～80℃,100 kHz时的εr计算,介电常数温度系数由205×10–6/℃逐渐减小到–240×10–6/℃;当替代量x(Sn4+)为0.16时,样品出现介电弛豫现象;随着测试频率的增加,介电弛豫峰向高温移动。     

A 60 line per inch plasma display panel

Gas discharge plasma display panels have been under development at Owens-Illinois for several years. This display device offers many advantages including: 1) tube depth (approximately ½ in) essentially independent of display size; 2) random write capability; 3) controlled information storage; 4) selective erase and bulk erase capability; 5) positive registration of displayed information; and 6) rear projection and/or printout capability. Panels, now available (DIGIVUE® display/memory unit), with 33⅓ and 40 electrode lines per inch are appropriate for many applications. However, a somewhat higher resolution of 50 or 60 lines per inch is desired for most general-purpose individual console displays when the number of lines inXor inYexceeds several hundred. The lower density Owens-Illinois panels are constructed from a parallel plate structure that was selected because of its compatibility with high volume manufacturing processing. This study indicated that the same basic structure could be used at resolutions up to 60 lines per inch. Design dimensions were optimized for this higher resolution and good dynamic operation was obtained. Process techniques were developed to produce panels with 256 by 256 lines and 512 by 512 lines. Several panels of each of these sizes were fabricated and evaluated. The performance of these 60 line per inch panels was comparable to that of the 33 line per inch panels.     

Apparent Frequency Dependence of the Microwave Power Radiated from Gas Discharge Noise Sources (Correspondence)

Historically it has been assumed that the microwave power per unit bandwidth radiated from the plasma of typical argon and neon gas discharge noise sources is frequency independent. There are now both a priori basis and experimental evidence for questioning this assumption. For such frequency independence to exist over a frequency range of 100 MHz to 100 GHz the following conditions must be met: (1) /spl planck/ /spl omega/ / kT<<1; (2) proper matching of the discharge to the guide; (3) an appropriate level of absorptivity of the plasma for these frequencies; (4) a Maxwellian electron velocity distribution function; and (5) absence of collective oscillations. The first three conditions are shown to be met. The fourth condition involves the concept of a radiation temperature. Because the appropriate electron velocity distributions are not Maxwellian this radiation temperature does depend somewhat on frequency. This dependence is limited to a small region around the electron-atom collision frequency. For the discharges of concern it is shown that these collision frequencies are 10/sup 9/ to 10/sup 10/s/sup -1/ and therefore contained in the frequency range of interest. The fifth condition relates to the fourth and recently has been shown in theory to be untrue. Finally there is now available experimental evidence which appears to show a small (0.2-0.3 dB) variation of excess noise ratio with frequency on existing tubes. Suggestions for future experiments and interim considerations are made.