铌锌酸铅基陶瓷的铁电行为研究

采用具有改进ＳａｗｙｅｒＴｏｗｅｒ电路的全自动铁电体电滞回线测试系统，对（０．９ｘ）Ｐｂ（Ｚｎ１／２Ｎｂ２／３Ｏ３０．１ＢａＴｉＯ３ｘＰｂＴｉＯ３［（ｘ＝０．０５，０．１０，０．１５，简称ＰＺＮＢＴＰＴ（０．１／ｘ）］系列铁电陶瓷样品在０℃～１９０℃温度范围内强场下的极化强度进行了详细测试，并与其弱场介电行为对比，探讨了铁电宏畴微畴不同的强场极化特性，发现ＰＺＮＢＴＰＴ（１０／１５）铁电陶瓷样品的极化强度在自发正常铁电体弛豫型铁电体转变温度Ｔｎｒ下有一个增大过程。     

Pb（Zn1／3Nb2／3）O3基复相陶瓷的结构与介电性能研究

在Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－ＢａＴｉＯ３－ＰｂＴｉＯ３系统中选用两种具有不同居里温度的固溶体为起始组元，按对数混合法则对Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３基温度稳定电容器陶瓷的组成和介电性能进行设计的基础上，采用混合烧结法制备了（１－ｘ）ＬＴＣ－ｘＨＴＣ温度稳定电容器陶瓷。     

PMN-BT陶瓷的介电性能和相变温度

制备了一系列ＰＭＮ－ＢＴ陶瓷,系统地研究了ＢＴ含量的变化对介电性能和相变温度的影响．ＰＭＮ－ＢＴ陶瓷的相变温度与组成呈“Ｕ”型变化曲线．相变温度的异常变化是由于系统中存在Ｂａ（Ｍｇ１／３Ｎｂ２／３）Ｏ３顺电微区所致．ＰＭＮ－ＢＴ陶瓷的介电弛豫特性随ＢＴ的增加经历了一个由弱变强,再由强变弱的过程．对由两种钙钛矿化合物构成的铁电固溶体相变温度的变化规律进行了讨论．     

具有过量PbO的Ph（Zn_（1／3）Nb_（2／3））O_3－PbTiO_3系

合成了添加过量ＰｂＯ后的Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－ＰｂＴｉＯ３（ＰＺＮ－ＰＴ）系陶瓷，并研究了其相结构及介电性能、在（１—ｘ）ＰＺＮ—ｘＰＴ（０．１＜Ｘ＜０．２）系陶瓷体中，添加过量ＰｂＯ提高了钙钛矿结构的稳定性，但过多地添加ＰｂＯ不利于提高其介电性能，当ＰＴ的摩尔浓度为１４—１９ｍｏｌ％时，这些组分最大介电常数和温度的关系与频率无关，而其介电常数的温度特性仍随频率变化而弥散     

具有过量PbO的Pb（Zn1／3Nb2／3）O3—PbTiO3系陶瓷的相结构和介电性能

合成了添加过量ＰｂＯ后的Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－ＰｂＴｉＯ３（ＰＺＮ－ＰＴ）系陶瓷，并研究了其相结构及介电性能，在（１－ｘ）ＰＺＮ－ｘＰＴ（０．１＜ｘ＜０．２）系陶恣体中，添加过量ＰｂＯ提高了钙钛矿结构的稳定性，但过多地添加ＰｂＯ不利于提高其介电性能。当ＰＴ的摩尔浓度为１４－１９ｍｏｌ％时，这些组分最大介电常数和温度的关系与频率无关，而其介电常数的温度特性及仍随频率变化而弥散。     

Pb（Ni_（1／3）Nb_（2／3））O_3－PbZrO_3－PbTiO_3三

对Ｐｂ（Ｎｉ１／３Ｎｂ２／３Ｏ３－ＰｂＺｒＯ３－ＰｂＴｉＯ３，即ｘＰｂ（Ｎｉ１／３Ｎｂ２／３）Ｏ３－（１－ｘ）Ｐｂ（ＺｒδＴｉ１－δ）Ｏ３（０．２≤ｘ≤０．６，０．２≤δ≤０．５）三元系固溶体的压电性能进行了研究，结果表明材料压电活性较高的配方位于准同型相界（ＭＰＢ）附近，压电常数ｄ３１值可达２６０×１０－１２Ｃ／Ｎ．讨论了结构相变对压电性能的影响．     

Pb（Zn1／3Nb2／3）O3基复相陶瓷的制备及其介电温度特性

采用两相混合烧结法制备Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ陶瓷。结果表明：在一定烧结温度下起始两组元可以共存形成复相结构，从而改善材料了的温度特性，成功地获得了低烧，高介，具有Ｘ７Ｓ温度特性的温度稳定型ＰＺＮ复相陶瓷。／     

复相弛豫铁电陶瓷的相组成与介电性能

采用两相混合烧结法在Ｐｂ（Ｚｎ１／３Ｎｂ２／３）Ｏ３－ＢａＴｉＯ３－ＰｂＴｉＯ３系统中制备了弛豫铁电陶瓷材料，相组成研究表明，该陶瓷具有两相共存的复相结构，对复相陶瓷的介电性能进行了研究，结果表明，复相结构可有效地改善弛豫铁电陶瓷的介温特性、频率特性和介质老化性能。     

BT-PMN共烧陶瓷的新的介温特性

具有不同居里点的两种铁电体粉末在共烧时会产生过渡相．这种过渡相的特性与原始物相的性质密切相关·ＢａＴｉＯ_３（简称ＢＴ）和Ｐｂ（Ｍｇ_１／３Ｎｂ_２／３）Ｏ_３（简称ＰＭＮ）共烧时,介温特性发生异常变化．结果显示,在低温端介温曲线明显抬起,表明具有更低居里温度（Ｔ_ｃ）的新相形成．而在高温端ＢＴ的^Ｔ_ｃ值升高,表明Ｐｂ进驻ＢＴ的晶格．共烧体的性能可以达到室温介电常数＞３０００,损耗＜６０,容温变化率符合Ｘ７Ｒ标准．     

ZnO压敏陶瓷的高温热释电现象

发现具有相变的Ｂｉ２Ｏ３系和不具有相变的Ｐｒ２Ｏ３系ＺｎＯ压敏陶瓷能从４００℃附近起产生热释电电流，这是在高温热过程中ＺｎＯ压敏陶瓷内有电荷迁移的直接证据，研究了升温速度和热循环次数对Ｂｉ２Ｏ３系和Ｐｒ２Ｏ３系ＺｎＯ压敏陶瓷热释电规律的影响．结果表明，在一定升温速度范围内高温热释电电流Ｉ－Ｔ曲线与升温无关；热历史对Ｐｒ２Ｏ３系ＺｎＯ压敏陶瓷的Ｉ－Ｔ曲线几乎没有影响，但对Ｂｉ２Ｏ３系的Ｉ－Ｔ曲线的影     

Thin film ferroelectrics for capacitor applications

Pulsed laser deposition (PLD) has been used to fabricate simple thin film capacitor structures with a variety of ferroelectric materials. Thin film capacitors using the conventional ferroelectric material BaxSr1-xTiO3(BSTO) have been made across the entire compositional series. Electrical characterization shows that in thin film form these ferroelectrics display Curie point behaviour which is largely independent of composition. This contrasts sharply with bulk behaviour. The thin film fabrication and characterization of relaxor ferroelectric ceramics, such as Pb(Mg1/3Nb2/3)O3 (PMN) and Pb(Zn1/3Nb2/3)O3-BaTiO3(PZN-BT), is also reported. © 1998 Chapman & Hall     

(Ba_(1-x)Sr_x)(Zn_(1/3)Nb_(2/3))O_3微波介质陶瓷微结构对介电性能的影响

采用传统的固相烧结法制备(Ba1-xSrx)(Zn1/3Nb2/3)O3微波介质陶瓷,研究微结构对介电性能的影响.随着系统中Sr2+含量的增多,介电常数和温度系数发生异常呈现非线性变化,这是由于氧八面体的畸变而导致的相转变造成的,相转变的发生相应影响了极化以及极化模式.相转变及氧八面体畸变对介质损耗没有明显的影响,介质损耗受到Sr2+含量及烧结温度的影响较大.     

铌锌酸铅基陶瓷的电致伸缩特性与极化机制

系统地测度了铌锌酸铅基系列陶瓷ＰＺＮ－ＢＴ－ＰＴ（８５－１０－５，８０－１０，７５－１０－１５）的电致伸缩应变，电滞回线和介电性能，研究了它们的电诱应变同极化强度关系。     

BaTiO3-Nb2O5-Ni2O3三元系统的介电性能研究

对三元系统BaTiO3-Nb2O5-Ni2O3的微结构和介电性能进行了研究．XRD分析表明Nb2O5／Ni2O3协同掺杂的BaTiO3陶瓷为赝立方相结构；在掺杂1．0mol％Ni的BaTiO3中，Nb的固溶度〈4．0mol％．SEM观察表明，随Nb掺杂量的增加，BaTiO3陶瓷的晶粒尺寸先增大后减小．BaTiO3陶瓷的室温介电常数、介质损耗，以及在低温端和高温端的电容变化率都随Nb含量的增加而先增大后减小．DSC测量表明，Nb掺杂使BaTiO3陶瓷的居里温度向高温方向移动．该系统瓷料介电性质的变化与材料的晶粒尺寸以及掺杂剂导致的相变温度的移动密切相关．本实验在BaTiO3-Nb2O5-Ni2O3系统中开发出了新型的X8R材料，这种材料很有希望用于制备大容量X8R多层陶瓷电容器．     

Molten salt synthesis of lead-based relaxors

The molten salt synthesis (MSS) of lead-based relaxors which have a perovskite structure, A(BIBII)O3 where BI is Mg2+, Fe3+, Zn2+, Ni2+ or Co2+, and BII is Nb5+, has been reviewed with regard to the formation of the perovskites, phase stability and morphology characteristics. Two relaxor materials, Pb(Mg1/3Nb2/3)O3 and Pb(Fe1/2Nb1/2)O3 were found to be successfully synthesized at a low temperature in a very short time by the MSS method. Using the example of Pb(Mg1/3Nb2/3)O3, the phase stability has been discussed on the basis of thermal and chemical analyses. The influences of the processing parameters, such as temperature, time, type and amount of salt, and non-stoichiometry, on the formation and the powder characteristics of the perovskite phase were investigated with possible explanations for the observed differences which were induced by changing the parameters. Finally, densification behaviour and dielectric properties resulting from the MSS powder were examined and compared to those of powders obtained by using the conventional mixed oxides (CMO) method. © 1998 Kluwer Academic Publishers     

铬掺杂的PSN-PZN-PZT四元系压电陶瓷材料的研究

用传统固相合成方法制备了Pb(sn1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3-PbZrO3-PbTiO3(简写为PSN-PZN-PZT)四元系压电陶瓷材料,主要研究Cr离子掺杂对此材料的微观结构以及压电、介电性能的影响.通过对XRD衍射谱图分析可知,随着Cr的掺杂量的增大,该系统材料的三方相的含量减少,准同相界的位置向三方相移动;SEM照片显示,晶粒尺寸随Cr的量增大而增大,在0.5wt%含量时晶粒分布均匀且大小较为一致;ERP结果表明,Cr2O3在材料中主要以Cr3 、Cr5 存在.且结合材料的性能参数分析,增加Cr的含量会促使Cr离子由高价向低价转化.当Cr2O3的掺杂量为0.5wt%时,PSN-PZN-PZT材料的综合性能较好.     

PZN-BZN和PZN-BT陶瓷介电性能研究

制备了Pb(Zn1／3Nb2／3)O3-Ba(Zn1／3Nb2／3)O3(PZN-BZN)和Pb(Zn1／3Nb2／3)O3-BaTiO3(PZN-BT)两类PZN基弛豫型铁电陶瓷,系统地研究了它们的介电性能以及热处理工艺对其介电性能的影响。合成出具有100％钙钛矿相的0．9PZN-0．1BZN陶瓷,其最大介电常数为6160(1kHz)。对比这两个系统的介电性能发现,PZN-BT系中隐含的BZN组分对陶瓷性能有着重要影响。退火热处理能显著提高PZN基陶瓷相变温度附近的介电常数,但对样品的相交扩散和介电弛豫现象没有明显影响。     

Preparation of Pb(Mg1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3 ceramics by the B-site precursor method and dielectric characteristics

Powders in the Pb(Mg1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3 system, with a high perovskite yield, were prepared by a B-site precursor method. PbO was added to pre-reacted B-site components of Mg1-xZnxNb2O6 solid solution, which was further calcined to form a perovskite structure. Perovskite phase contents and lattice parameters were obtained from X-ray analyses. Weak-field low-frequency dielectric constants and losses of sintered pellets were measured as functions of composition, temperature and frequency. Dielectric relaxation behaviours were investigated in terms of diffuseness coefficients. Microstructures were observed to correlate with other characteristics. © 1998 Chapman & Hall     

Recent developments in high curie temperature perovskite single crystals

The temperature behavior of various relaxor-PT piezoelectric single crystals was investigated. Owing to a strongly-curved morphotropic phase boundary, the usage temperature of these perovskite single crystals is limited by T/sub R-T/- the rhombohedral to tetragonal phase transformation temperature - which occurs at the significantly lower temperatures than the Curie temperature T/sub c/. Attempts to modify the temperature usage range of Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PZNT) and Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PMNT) rhombohedral crystals (T/sub c/ /spl sim/ 150-170/spl deg/C, T/sub R-T/ /spl sim/ 60-120/spl deg/C) using minor dopant modifications were limited, with little success. Of significant potential are crystals near the morphotropic phase boundary in the Pb(Yb/sub 1/2/Nb/sub 1/2/)O/sub 3/-PbTiO/sub 3/ (PYNT) system, with a T/sub c/ > 330/spl deg/C, even though T/sub R-T/ was found to be only half the value at /spl sim/160/spl deg/C. Single crystals in the novel BiScO/sub 3/-PbTiO/sub 3/ system offer significantly higher T/sub c/s > 400/spl deg/C, while exhibiting electromechanical coupling coefficients k/sub 33/ > 90% being nearly constant till the T/sub R-T/ temperature around 350/spl deg/C, which greatly increases the temperature range for transducer applications.     

铁掺杂0.2PZN-0.8PZT铁电陶瓷Raman散射研究

采用Raman散射方法研究了铁掺杂Pb（Zn1／3Nb2／3）0．2（Zr0．5Ti0．5）0．8O3（0．2PZN0．8PZT）铁电陶瓷中三方-四方共存现象．通过分析四方相E（3TO）和A1（3TO）模式与三方相R1模式之间的相对强度，以及四方相E（3LO）和A1（3LO）模式与三方相Rh模式之间的相对强度，确定了铁掺杂对0．2PZN-0．8PZT陶瓷中三方-四方共存结构的影响，并得到了XRD相分析的验证．因此，通过分解Raman散射中三方-四方振动模式，可以表征掺杂对PZT基陶瓷中三方-四方共存现象的变化趋势．