前栅极冷阴极器件中单根纳米线表面电场分布研究

利用静电场理论,对带栅极纳米线场发射冷阴极器件模型进行电场计算,在此基础上,进一步对器件几何参数以及电压对纳米线顶端表面电场的影响做了理论分析。结果表明,在纳米线低于栅极的情况下,纳米线顶端表面电场强度比其他点更强,随着离纳米线顶端距离的增加,电场急剧下降;栅孔半径、阴极与栅极距离的减小以及纳米线长度的增加,均使纳米线顶端表面电场大大增强,而栅极与阳极间距变化对顶端表面电场的作用很微弱;另外,纳米线顶端表面电场随栅极和阳极电压的增加而大幅度增强,尤其栅极电压的变化对纳米线顶端表面电场的影响更大。     

Photon-enhanced field emission from CdS single crystals

In a previous experiment, field emission was observed from sharply pointed CdS single crystals. The experiments have now been extended, illuminating the tip with light from a pulsed argon-ion laser. It was found that (a) the voltage threshold at which emission can be observed is reduced, typically from 500 to 400 V, (b) under some conditions, the emission is increased by a factor of 103, (c) this emission persists for more than 2×10?2s after the laser pulse and appears to have two characteristic decay times, (d) the emission is approximately proportional to the light intensity and (e) the greatest photo-enhanced field emission was obtained with the laser light shining axially on the emitting area of the tip.     

An empirical study of dynamic properties of an individual carbon nanotube electron source system

In this paper we present an empirical study of some dynamic properties of an individual carbon nanotube (CNT) field emission electron source system. We propose a circuit model that represents the CNT cathode to anode diode as a capacitor in parallel with a voltage-controlled variable resistor. The transient response of the CNT electron source system to the falling edge of a voltage step input was evaluated. For input voltages below the threshold voltage for field emission, the nanotube loop is effectively open and the circuit response is consistent with a discharging capacitor. On the other hand, for input voltages above field emission threshold, the nanotube loop conducts and now the capacitor discharges to a certain extent through the nanotube loop as well. Field emission current versus voltage data also shows that the resistance across the CNT cathode to anode diode varies as a function of applied voltage. Below turn-on voltage, the diode behaves as an open circuit (4 TΩ at the ammeter noise floor). Above turn-on voltage, resistance falls exponentially, as expected from the Fowler–Nordheim equation for cold field emission current. Experimental current–voltage data is presented for a simple emitter array consisting of two CNTs with equal lengths. Despite the similarity in their lengths the turn-on voltages of the nanotubes varied significantly, viz. 26 V versus 109 V. This large difference in the turn-on voltages can be attributed to tip imperfections. For advanced array applications such as high-throughput parallel e-beam lithography, in which precise dose control is necessary, the diode circuit model will be useful for controlling individually addressed nanotubes to account for dissimilar field emission properties. The model may also be applied to optimize the design of a SEM incorporating a single CNT electron source.     

一种背栅极冷阴极器件中纳米线表面电场的分析

利用静电场理论计算了背栅极冷阴极器件的纳米线附近电场,给出电场分布的表示式及J-V曲线,并分析了几何参数对纳米线顶端表面电场的影响.结果表明,纳米线顶端表面产生巨大的电场,随着离纳米线顶端表面距离的增大,电场迅速下降;纳米线突出栅孔的长度(L-d1)越大,纳米线半径r0、栅孔半径R以及栅极与阳极间距d2越小,则纳米线顶端表面电场越强,而d2较大时d2对表面电场的影响很弱;纳米线顶端边缘电流密度J随着阳极与栅极电压的增加而指数增大.     

Procedure for calculating the field-emission current from a single carbon nanotube

A method for calculating the field-emission current from a single carbon nanotube in an external electric field directed along the nanotube is presented. The method is based on a semiclassical approach using the subbarrier-tunneling mechanism. It is shown that the current corresponds to the Nordheim-Fowler mechanism for field emission in the case of strong fields; in the case of weak fields, there are deviations associated with features of the behavior of the potential barrier.     

原位电子束诱导沉积制备碳纳米结构

以多壁碳纳米管为基本材料,利用电子束诱导沉积的方法进行了纳米结构加工、修饰研究.电子束诱导沉积实现了二个碳纳米管端部之间的牢固焊接,实现了纳米材料间的几乎无损伤连接.原位测量表明多壁碳纳米管间的连接为欧姆接触.进一步对碳纳米管施加外电场可以使端部碳原子间的π键打开,外部碳原子经电子束诱导沉积在碳纳米管的端部,并定向生长成非晶态碳纳米线.由于碳纳米管和纳米线结合处的.键作为绝缘界面,形成了电子输运的势垒,所得到的碳纳米管-纳米线复合结构具有整流特性.利用电子显微镜进行纳米材料的结构加工、修饰,具有选择位置精确、可实时监测、对纳米材料几乎无损伤、重复性和可靠性高,以及加工尺度可人为控制的特点.     

碳纳米管场致发射结构的研究

碳纳米管以其特有的电学性质而成为一种优良的冷阴极材料。在场致发射器件中，真空度是决定发射稳定性的一个重要因素。如果碳纳米管阴极附近的真空度太低，将产生打火、气体电离、离子回轰阴极等问题，将导致阴极发射电流的迅速衰减。本文通过对基于碳纳米管冷阴极的二极管和三极管的场发射特性的实验，分挤了残余气体压强与外加电压、发射体工作时间的关系以及碳纳米管阵列的I-E曲线，利用这些结果可以优化碳纳米管场致发射结构的设计。     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

基于计算机仿真的ZnO场致发射显示器的研究

在Spindt结构仿真方法的基础上,将四针状纳米ZnO近似处理成尖锥结构,采用C语言程序编程,求解电位、电场分布、电子运动轨迹及发射电流密度。通过计算机模拟仿真,分析了栅极孔径、栅极电压以及阳极电压等对显示器性能的影响。在理论优化设计指导下,采用丝网印刷制作带孔的介质层,用电泳方法在阴极电极上沉积ZnO发射体,制成孔状金属栅三极结构显示屏。测试了显示器的电子发射调制性能,实验表明采用计算机仿真设计的三极结构ZnO场致发射显示器具有良好的场致发射性能。     

Charge accumulation and mobility in thin dielectric MOS transistors

A study of the turn-on of very thin dielectric MOS devices from subthreshold to strong inversion is described. A functional form has been found for the derivative of channel charge with respect to gate voltage, the derivative of channel charge with respect to distance along the channel, and the electric field along the channel in this transition region. A method to extract electron mobility versus gate voltage independent of any arbitrarily defined threshold voltage has been shown. Measured data on the electron mobility vs gate voltage for 100Å gate dielectric MOS devices are reported.     

Carbon-nanotube-based triode-field-emission displays using gatedemitter structure

We fabricated a carbon-nanotube-based triode-field-emission display with a gated emitter structure made up of a gate layer, a thin insulating layer, and a carbon nanotube layer. A low threshold voltage of 20 V and a total anode current of 0.5 mA at 80 V were observed for 30×30 pixel panels. We also demonstrated highly efficient and homogeneous emission from all pixels at voltages lower than 100 V. Based on simulation of electric fields in gate holes, further improvement of the emission properties is expected by optimizing its structural parameters, such as the gate-hole diameter     

A voltage calibration technique of electro-optic probing for characterization internal to IC’s chip

This paper simulates the electric potential distribution and the electro-optic (EO) signal amplitude in a longitudinal poled EO polymer external probe tip on the electric signal transmission lines under test. The influence of the circuit layout on the EO probing is discussed. A novel probing configuration with a poled polymer EO probe tip is built and demonstrated for the first time, by which the signal voltage level corresponding to the EO signal can be calibrated. Using the new probe tip, we examine the influence of the variations of the linewidth and the spacing between neighboring lines on the EO signal. The results indicate that when the vertical distance between the tested point on the lines and the reference electrode is not larger than that between the tested point and its neighboring conductor, the disturbance from circuit layout can be avoided so that the voltage calibration of EO signal can be carried out.     

Feasibility of employing model-based optimization of pulse amplitude and electrode distance for effective tumor electropermeabilization

In electrochemotherapy (ECT) electropermeabilization, parameters (pulse amplitude, electrode setup) need to be customized in order to expose the whole tumor to electric field intensities above permeabilizing threshold to achieve effective ECT. In this paper, we present a model-based optimization approach toward determination of optimal electropermeabilization parameters for effective ECT. The optimization is carried out by minimizing the difference between the permeabilization threshold and electric field intensities computed by finite element model in selected points of tumor. We examined the feasibility of model-based optimization of electropermeabilization parameters on a model geometry generated from computer tomography images, representing brain tissue with tumor. Continuous parameter subject to optimization was pulse amplitude. The distance between electrode pairs was optimized as a discrete parameter. Optimization also considered the pulse generator constraints on voltage and current. During optimization the two constraints were reached preventing the exposure of the entire volume of the tumor to electric field intensities above permeabilizing threshold. However, despite the fact that with the particular needle array holder and pulse generator the entire volume of the tumor was not permeabilized, the maximal extent of permeabilization for the particular case (electrodes, tissue) was determined with the proposed approach. Model-based optimization approach could also be used for electro-gene transfer, where electric field intensities should be distributed between permeabilizing threshold and irreversible threshold-the latter causing tissue necrosis. This can be obtained by adding constraints on maximum electric field intensity in optimization procedure.     

GaAs PHEMT器件的退化特性及可靠性表征方法

测量了应力前后Ga As PHEMT器件电特性的退化,指出了Ga As PHEMT阈值电压的退化由两个原因引起.栅极下Al Ga As层深能级的空穴积累可以解释阈值电压漂移中暂时性的、可恢复的那部分,积累在栅金属与半导体之间界面层的空穴可以解释阈值电压漂移中永久性的漂移.空穴积累来源于场助作用下电子的退陷和沟道中碰撞电离产生的空穴向栅极流动时被俘获.对高场下碰撞电离率的实验曲线进行拟合,得到碰撞电离率与器件沟道电场峰值的量化关系,可以对Ga As PHEMT器件的电性能和可靠性进行评估     

一种微机械光开关的分析和设计

对悬臂梁微机械光开关的机电特性进行了理论分析 .利用机械和电学特性 ,导出了悬臂梁的弯曲量和所加的电压的解析关系 ,并给出了阈值电压的计算公式 .指出外加电压与梁的宽度无关 ,与梁的长度的平方成反比 .悬臂梁尖端的弯曲量不能超出相邻电极间距的 1/ 3.这些结论是悬臂梁微机械光开关设计和研制的直接依据     

薄膜衬底电极CNT阴极制备及场发射性能研究

采用电泳沉积(EPD,electrophoretic deposition)法在不同薄膜衬底电极上制备碳纳米管(CNT,carbon nanotube)场发射阴极.采用场发射扫描电子显微镜(FESEM)对其进行表面形貌表征,结果表明,EPD可以制得CNT均匀分布的场发射阴极.场发射测试结果表明衬底电极对CNT阴极的场发...     

Peculiarities of the total energy distribution of field emission electrons from graphene-like structures

It is demonstrated that the field emission from graphene-like structures (GLSs) has a very low excitation threshold (about two orders of magnitude lower than that of metals and semiconductors). It is shown that the total energy distribution (TED) of field emission electrons from GLSs differs considerably from the spectra obtained for metals. The existence of two maxima of this distribution (spaced 0.7–1.7 eV apart), significant broadening of the energy distribution, and a shift of these maxima depending on the electric field intensity are reported. The resonance nature of low-threshold field emission from GLSs is confirmed.     

Filamentary AC electroluminescence in ZnS:Mn

Steady state and switching behavior of single luminescence filaments in a-BaTiO₃/ZnS:Mn/a-BaTiO₃ ac thin film electroluminescence devices have been studied. The brightness-voltage amplitude hysteresis, or memory effect, of these devices results from the ensemble behavior of luminescing filaments that are bistable in their luminescence level. A trap depth of 1-1.2eV is estimated on the assumption that the voltage threshold for luminescence involves electric field emission from traps. The temperature dependence of electroluminescence near the threshold voltage is investigated.     

On relationship between the field at an autoemitter top, anode voltage and cathode geometry

Currently a lot of electron emission experiments both in carbon nanotubes with top curvature radius <1 nm, and in emitters as short as 10³ nm with top curvature radius of some tens nanometer are carried out. Experimental results can be explained by a tunnel emission through potential barrier in vacuum near the solid-state cathode border making use of Fowler-Nordheim law. However, in case of cathodes with radius of top curvature less than 100 nm this law is not valid.To proof this statement, the potential of an autoemission diode consisting of a tip cathode located on a flat metal base and flat anode, its dependence on the shape, height of the tip as well as voltage drop on it were calculated in this paper. It has been shown that with cathode tip height and its radius of curvature decreasing (?100 nm) the transparency of the potential barrier depends non-linearly on the anode voltage in the Fowler-Nordheim coordinates when the cathode tip height decreases from 1000 down to 150 nm. To obtain a measurable autoemission current, work function must not exceed the uniform field’s potential drop between cathode top and its base. Deduced is the analytic formula for the electric field potential that extends approximation features for real cathodes shapes and enables more accurate electric field modeling at the surface.     

MOSFET栅下碰撞电离与击穿研究

研究了场板终端技术对改善 MOSFET栅下电场分布和碰撞电离率的作用 ,结果表明 ,MOSFET在高压应用时 ,漏极靠近表面的 PN结处电场最强 ,决定器件的击穿特性。通过对实验研究与计算机模拟结果的分析 ,表明在不同的栅压下 ,此处场板长度的大小对栅下电场强度有直接的影响 ,合理地控制场板长度能有效地提高器件的击穿电压。