水热合成镧掺杂钛酸铋粉体的初步研究

初步研究了镧掺杂钛酸铋粉体的水热合成工艺,借助XRD及TEM对粉体的组成、结构、晶粒度及粉体形貌进行了研究。结果表明:合成该粉体的最佳工艺条件为240℃保温6h;粉体的微观形貌呈片状;镧的掺杂抑制了钛酸铋晶体的生长。     

稀土元素钬掺杂铁酸铋基纳米薄膜铁电性及疲劳性能的增强

在该项研究中,通过化学溶胶凝胶法,将纯铁酸铋薄膜与钬掺杂铁酸铋薄膜镀在Pt(100)/Ti/SiO_2/Si衬底上面,然后进行材料的性能研究。通过对铁酸铋薄膜进行电性能的测试,发现在掺杂稀土元素钬之后,铁酸铋薄膜的铁电性能显著增强,漏电流明显减少。铁酸铋电性能的增强归因于钬元素掺杂后该物质一种从六方相到四方相的结构转变。与此同时,通过对铁酸铋薄膜进行疲劳测试,发现在掺杂钬元素后,该物质的疲劳行为也得到了显著的增强,这也归因于掺钬后铁酸铋结构的转变与氧空位的减少。目前的工作为铁酸铋薄膜铁电和疲劳特性的增强提供了一种可用的方法,使其的实际应用成为可能。     

水热合成掺镧钛酸铋粉体及其光催化性能探讨

以硝酸铋、四氯化钛和硝酸镧为原料,以氢氧化钾为矿化剂,采用水热法合成了不同镧掺杂量的钛酸铋粉体.用X射线衍射(XRD)和透射电镜(TEM)对所得粉体进行了表征,借助紫外-可见分光光度计考察了样品降解甲基橙的光催化性能.实验结果显示:在水热合成温度为220～280 ℃、保温时间为6 h的条件下,可得到各向异性、短轴为30 nm、长轴大于100 nm的掺镧钛酸铋粉体,且该方法所制备的掺镧钛酸铋(Bi 4-xLaxTi3O12)粉体具有一定的光催化效果.     

铁酸铋薄膜的掺杂改性与光伏效应研究进展

铁酸铋在室温下同时具有铁电、铁磁性能,是目前最具应用前景的无铅多铁性材料,为了实现器件应用,开展铁酸铋薄膜制备及掺杂改性研究十分重要。最近,铁酸铋薄膜的光伏效应及太阳能电池应用受到广泛关注。本文介绍了铁酸铋的晶体结构、铁电性能和铁酸铋薄膜的制备方法。重点总结了铁酸铋薄膜替位掺杂及其光伏效应研究的最新进展,最后指出有关研究存在的问题和未来的重点研究方向。     

掺镧钛酸铋薄膜制备过程的光谱研究

采用金属有机物分解法(MOD)制备了掺La钛酸铋铁电薄膜并对其膜的形成过程进行了红外、拉曼光谱研究,为高性能铁电薄膜的制备做出前期准备。研究表明,膜的形成经历了有机物分解和晶相转变过程,相变从600℃开始至700℃基本结束。结晶过程中掺入的La3 取代了晶格中Bi3 的位置,降低了钛酸铋的晶相转变温度,导致了晶格中TiO6构成的正八面体畸变,从而影响了晶体的结构及性能。     

铋和镧共掺杂二氧化钛半导体的制备与光催化性能研究

采用溶胶-凝胶法制备了纯的TiO2和铋镧共掺杂的TiO2光催化剂,以活性黑KN-B为模型降解物,考察了铋单掺杂和铋镧共掺杂对TiO2光催化剂的活性影响,研究了催化剂投加量、染料初始质量浓度、溶液pH对活性黑KN-B降解率的影响.结果表明,铋掺杂的TiO2光催化活性高于TiO2,而适量铋镧共掺杂TiO2光催化活性进一步提高,最佳掺杂比是0.5％的Bi和0.2％的La.当铋镧共掺杂TiO2催化剂投加量为2.0 g·L-1,初始质量浓度为40 mg·L-1,pH为2.2时,活性黑KN-B在125W高压汞灯光照下20min后的降解率可达100％.     

钨离子掺杂对Ca0.7La0.3Bi4(Ti1-xWx)4O15陶瓷性能的影响

用固相法研究了钨离子(W6 )掺杂对铋层状钛酸铋钙镧[Ca0.7La0.3Bi4(Ti1-xWx)4O15,CLBTWx]陶瓷的铁电性能、介电性能和压电性能的影响,得到了W6 掺量与铋层状CLBTWx陶瓷性能的关系.用X射线衍射和扫描电镜研究了W6 掺量对铋层状CLBTWx陶瓷微观结构和物相的影响,探讨了W6 掺杂改性的机理.结果表明:随着W6 掺量的增加,CLBTWx陶瓷的介电常数(ε)先增大后减小;介质损耗(tanδ)先减小后增大;压电应变常数(d33)先增大后减小;剩余极化强度(Pr)先增大后减小然后再增大再减小;矫顽场(Ec)变化规律与Pr的相同.当W6 掺量为0.025mol时,可得到综合性能好的无铅铋层状CLBTWx陶瓷,其烧结温度为1 120～1 140℃时,CLBTWx陶瓷的ε=183.15;tanδ=0.00446;d33=14×10-12C/N;2Pr=26.7μC/cm2;2Ec=220kV/cm.该类材料适合于制备铁电随机存取存储器和高温高频压电器件.W6 掺杂从生成钙空位或铋空位、形成焦绿石相、促进陶瓷致密化、偏析晶界影响陶瓷晶粒的均匀生长等方面来影响铋层状CLBTWx陶瓷性能和结构.     

钛酸铋/铁酸钴层状复合材料的制备及其性能研究

笔者利用微波烧结的方法制备出钛酸铋/铁酸钴(Bi_4Ti_3O_(12)/CoFe_2O_4)层状磁电复合陶瓷材料,主要研究了复合材料铁电相的含量对其性能的影响。采用XRD和SEM等相关测试手段对复合材料的相组成以及微观形貌进行了系统的分析。研究表明,在钛酸铋基层状复合材料中,所有的铁电相和铁磁相都可以很好的共存,并保持各自的物理特性。钛酸铋与铁磁相界面清晰,无明显扩散反应。钛酸铋层状复合材料在室温下表现出了优异的磁电耦合性能,材料磁电耦合系数最大为72mV/cm Oe。     

含铋光催化材料的研究进展

含铋光催化材料因其能吸收可见光、催化活性高而具有广阔的应用前景。本文主要回顾了含铋光催化材料近年来的研究概况,详细介绍了铋氧化物、卤氧化铋及钛酸铋、钨酸铋、钒酸铋、钼酸铋、铁酸铋等光催化剂的结构、制备和光催化性能,重点对光催化性能的改进方法进行了综述,包括制备方法的改良、催化剂的掺杂改性及复合催化剂的制备等;最后针对进一步提高光催化剂整体性能、实现工业化应用两点,提出了未来可以利用多元元素掺杂、多元半导体复合进行改性和负载于某些载体制备整体催化剂进行改良的观点。     

镧掺杂对钛酸铅粉体形貌及粒径的影响

稀土掺杂钛酸铅系陶瓷是一类重要的电子陶瓷材料,其表面形貌及粒径对材料性能有显著影响。采用水热法,以三水合乙酸铅和钛酸四丁酯为主要原料合成了一系列镧掺杂量不同的钛酸铅粉体,利用XRD、SEM、EDS、LPA等手段对粉体的物相、表面形貌及粒径进行了表征。结果表明:水热条件下制得的粉体中只有极少的镧(Ⅲ)取代铅(Ⅱ)进入晶格,大部分则以氢氧化镧的形式存在于晶粒间界处或被吸附在颗粒表面。未进入晶格的镧使晶粒产生择优取向,生长成棒状。粉体的粒径也因镧的引入而发生规律性变化。随着镧掺杂量的增加,粒径先减小后增大,当掺杂量x=0.05时出现临界点。     

Recent Materials Characterizations of [2D] and [3D] Thin Film Ferroelectric Structures

A review is given of ceramic and single-crystal thin film ferroelectric oxides, emphasizing perovskite phases, together with some new developments on hafnia films. It is shown that single-crystal barium titanate films behave as bulk down to at least 77 nm, with no finite size effects, no phase transition temperature shifts, and no dielectric peak broadening or change from first- to second-order transitions, suggesting that the gradient defect model of Bratkovsky and Levanyuk correctly describes such effects as extrinsic in experimental studies of equally thin ceramic thin films. In ceramic barium–strontium titanate (BST) thin films, it is shown that there is also no intrinsic broadening or shifts in phase transitions, with sharp, unshifted, bulk-like transitions observed only as re-entrant upon warming from cryogenic temperatures; this shows that phase transitions in ceramic thin films are dominated by kinetics and not thermodynamics and are definitely not equilibrium measurements. At high fields (>1 GV/m), the films exhibit space charge-limited conduction; no variable-range hopping is observed, contrary to recent studies on SrTiO₃. Some novel, unconventional switching processes are discussed, comparing the "perimeter effect" (non-equilibrium, ballistic) with Molotskii's equilibrium model. Theory and experiment are described for [3D] nanotubes, nanorods, and nano-ribbons (or micro-ribbons). The layered-structure-perovskite–pyrochlore conversion in bismuth titanate is described together with the PbO+TiO₂ phase separation in lead zirconate titanate during electrical breakdown, as are novel HfO₂ precursors that demonstrate enhanced temperature crystallization from the amorphous state and hence commercial advantages for front-end processing.     

Characterization of Chemical Solution Deposition-Derived Lead Hafnate Titanate Thin Films

In this paper, lead hafnate titanate (PHT) was derived by chemical solution deposition (CSD) and characterized as a thin film material. The thin films were tested for the usage as a ferroelectric thin film in view of Ferroelectric Random Access Memory (FRAM) devices and compared with an equivalent lead zirconate titanate (PZT) thin film, which was prepared under the same conditions. After determining the thickness and the morphology of the PHT films, electronic measurements were performed to investigate this material as a promising candidate in view of FRAM applications due to failure mechanisms like fatigue and imprint.     

Relaxor Ferroelectric Behavior in Barium Strontium Titanate

The development of barium strontium titanate‐based tunable dielectrics is currently hindered by high losses in the paraelectric phase. Barium strontium titanate (BST) thin films and ceramics show a range of ferroelectric transition behavior, from normal, diffuse, and relaxor‐like ferroelectric responses, depending on the sample preparation route. Rayleigh analysis, the temperature‐dependent dielectric response, and the optical second harmonic generation were used to characterize the ferroelectric response of bulk and thin film BST. Ferroelectricity is observed to persist in BST for 30°C above the global phase transition temperature in ceramics and over 50°C in thin films. Piezoresponse force microscopy on BST ceramics with extensive residual ferroelectricity reveals the coexistence of nanoscale polar regions, typical of relaxor ferroelectrics, as well as micrometer scale domain structures. The nature of the phase transition was probed using electron energy loss spectroscopy and found to correlated with the nanoscale A‐site chemical inhomogeneity in the samples.     

Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide

We report the first instance of deposition of preferentially oriented, nanocrystalline, and nanocolumnar strontium-doped lead zirconate titanate (PSZT) ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were used between PSZT and silicon dioxide. The deposited thin films have been characterised using a combination of diffraction and microscopy techniques.     

Microstructural Characterization of Ferroelectric Thin Films in Transverse Section

A technique has been developed for the TEM examination of ferroelectric thin films in transverse section. Some preliminary results are reported for three different thin-film/substrate systems. The microstructures of thin films of lead scandium tantalate deposited onto sapphire and MgO, and lead titanate deposited onto AIN, have been examined, with particular attention being paid to the quality of the thin-film/substrate interfaces and to the changes in the nature of the microstructures of the thin films as a function of distance from their substrates. It is demonstrated that the technique successfully produces adequate electron transparent regions for the characterization of the thin-film/substrate interface of all the samples examined and that it is possible to prepare transverse sections of ferroelectric thin films routinely.     

溶胶-凝胶法制备钛酸锶钡铁电薄膜的研究

钛酸锶钡(BST)薄膜是一类重要的铁电薄膜材料。采用溶胶-凝胶法制备了不同组分的具有钙钛矿结构的BST薄膜。利用X射线衍射技术(XRD),研究了不同退火条件下BST薄膜的结晶特性,结果表明制备的BST薄膜形成了单一的钙钛矿结构;利用扫描电子显微镜(SEM)和原子力显微镜(AFM)观察了薄膜的表面形貌,结果表明制备的BST薄膜光滑,平整,无明显的孔洞和裂纹,且生长良好。BST薄膜的晶粒细致,排列整齐,分布均匀,呈现球状。     

掺锶对钛酸铅薄膜结晶性能的影响

钛酸锶铅(PST)薄膜是一类重要的铁电薄膜材料.采用溶胶-凝胶法在硅(100)衬底上制备了钛酸锶铅薄膜.利用X射线衍射(XRD)、原子力显微镜(AFM)等表征手段,表征了不同锶掺杂量及不同退火温度对薄膜结晶性能的影响.通过实验发现:锶掺杂对薄膜的微观结构和表面形貌有重要的影响.由XRD谱图发现,随着锶掺入量的增加,Pb 1-xSrxTiO3薄膜中的晶轴比、晶胞体积都逐渐减小,晶化温度降低.通过AFM发现,相同掺锶量的薄膜随着退火温度的升高,结晶性能增强,颗粒增大,粗糙度增加.     

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.     

Single-target sputter deposition and post-processing of perovskite lead titanate thin films

The growth of ferroelectric lead titanate (PT) thin films by RF magnetron sputtering using a single mixed-oxide target is described. This study has been focused on producing perovskite thin (2000 Å) films with the desired composition on different substrates. Depositions were performed at room temperature and the process gas is pure argon. The effects of deposition and post-annealing conditions on film composition and microstructure were evaluated. Optimization of process conditions is discussed in terms of stoichiometry, structure and reproducibility. The optical properties of the films have also been characterized.     

Effects of annealing temperature on the microstructure,optical, ferroelectric and photovoltaic properties of BiFeO3 thin films prepared by sol–gel method

Bismuth ferrite thin films were prepared via sol–gel spin-coating method and the effects of annealing temperature on microstructure, optical, ferroelectric and photovoltaic properties have been investigated. The results show that the bismuth ferrite thin films annealed at 550 °C is single phase and the grain size increases with the rise of annealing temperature. The band gap of bismuth ferrite thin films annealed at 550–650 °C is between 2.306 eV and 2.453 eV. With the rise of the annealing temperature, the remnant polarization gradually decreases and the coercive electric field increases. The short circuit photocurrent density decreases with the rise of annealing temperature, and the open circuit photovoltage and the power conversion efficiency of bismuth ferrite thin films annealed at 550 °C are higher than the thin films annealed at higher temperature.