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射频连接器"抗电强度"指标很重要。它是射频连接器在工作中防止强电干扰能力的指标。抗电强度好,则连接器才能在整机里安全、可靠的工作。该指标是用耐射频高电位电压测试项目来检测的。而在美军标中对耐射频高电位电压测试项目作了明确的规定。我国上世纪八十年代,以美军标MIL-C-39012B为依据,采用"等同采用"的方针编译、建立了国标GB12272-90和国军标GJB681。经多年来该项目的测试实践以及开发耐射频高电位电压测试仪的实践,发现我国现行标准"详细规范"(同美军标活页规范)规定的"试验电压"太低,必须提高。同时,也必须改进"耐射频高电位电压测试仪"的性能指标。使该仪器能在更高电压下工作,即必须提高"耐射频高电位电压测试仪"的输出电压。我通过技术创新,大幅度的提高了耐射频高电位电压测试仪的输出电压,开发出了SNY-2耐射频高电位电压测试仪。文中介绍了"SNY-2耐射频高电位电压测试仪"的技术指标。这个新型仪器使该项目能在更高的电压下进行试验成为现实。文中还介绍了用该仪器进行测试时,对各种不同规格的射频连接器寻找新的"试验电压"的方法及如何修改提高现行"详细规范"试验电压的途径。该项目在更高的"试验电压"下进行试验,获得通过的受试连接器抗电强度的性能将大幅度的得到提高,有着重要的军事意义。由于耐射频高电位电压测试仪的输出电压大幅度提高,在更高电压下进行试验,故该项目成为我国具有自主知识产权的特有项目。 相似文献
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本文阐述了研制射频连接器射频高电位耐压试验设备的现实意义,介绍了该项试验的机理和基本原理,介绍了射频连接器射频高电位耐压试验的方法。 相似文献
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从上世纪八十年代开始,我国等同采用美军标编制了国军标和国家标准。在这些标准中,关于射频同轴连接器的"耐射频高电位电压"的测量作了明确的规定。但虽经多家单位对这一测量技术进行了技术研究,对于这一项目的测量方法和手段始终没有得到有效的解决。西安精为电子技术有限公司"SNY-2耐射频高电位电压测试仪"研制成功,将终结这一测量项目无仪器可用的尴尬历史,并对这项测量时被测连接器流过的电流进行讨论。 相似文献
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本文阐述了微波器件的电压驻波比和反射系数,测量射频同轴连接器电压驻波比的意义。介绍了测量射频同轴连接器电压驻波比的测量方法。 相似文献
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《机电元件》2017,(3)
射频连接器是用量很大的军工工业基础元件,从全世界范围看连接器该项目的测试,只有美国和我国开展了这一项目的测试。上世纪70年代,美国射频连接器行业就编制了多项"美国军用规范",但未制作测试仪器。按规范的要求用电子器件连接进行测试。我国从上世纪80年代这一项目开始起步,编制国家标准,国家军用标准,对该项目进行了基础科研,开发了仪器。但由于种种原因,这几十年来开展的比较差。近几年,我公司应多家单位的要求,开发出了"SNY-2"耐射频高电位电压测试仪,我公司的仪器比美国试验波形信号好,是正弦信号,而在美军标中仅仅只要求"允许近似正弦信号"。试验信号波形好是我公司仪器的突出优势。 相似文献
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宇航级电连接器及其电缆组件是航天系统重要的配套接口元件,相当于航天系统的血液循环和神经系统;散布在各个系统和部位的电连接器及电缆组件,负责整机信号和能量的传输;其射频性能的好坏,直接关系到整个系统的安全可靠运行;射频性能如电缆射频功率测试能是比较前沿的测试技术,目前具备此项测试能力的国内厂家寥寥无几;电连接器的选材及工艺设计水平,决定其射频性能指标的好坏。本文以宇航级电连接器及电缆组件为例,介绍其选材及最常见的射频性能测试项目:电晕电平、连接器电缆组件射频功率及射频高电位耐压;完成这些测试项目的测试,需要使用专业测试系统与测试软件。 相似文献
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用半波长替代法进行射频同轴连接器电压驻波比测量时,测得一对连接器的电压驻波比后,为何要估算单个连接器的电压驻波比?本文回答了这一问题,并讨论了单个连接器电压驻波比和一对连接器电压驻波比之间的定量关系。 相似文献
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GregoryL.Amorese 《国外电子测量技术》2004,23(1):12-14
射频(RF)电感器是许多无线电路设计中的关键元件。适当表征这类复杂器件对于获得优良的系统性能十分重要。但是,全面、精确表征这类器件提出了许多复杂的任务。本文将对这些复杂任务进行评述,并提出获得最佳结果的某些解决方案。 相似文献
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Hyeon Cheol Kim Kukjin Chun 《IEEJ Transactions on Electrical and Electronic Engineering》2007,2(3):249-261
Recently, to meet the demands of multimode/multiband functions for the next generation communication systems, RF MEMS technology is being developed for the reconfigurable transceiver system. In this article, RF MEMS devices such as switches, high‐Q inductors, and high‐Q resonators are reviewed for their operating principles and device structures, as well as the reliability and commercial issues. Single pole single throw (SPST)‐type MEMS switches show characteristics superior to solid‐state switches in the aspects of insertion loss, isolation, and linearity. Single pole multithrow (SPMT) switches will enable ultra small‐sized cellular phones, but insertion loss and coupling between channels should be improved. For a high‐Q inductor, out‐of‐plane inductors show improved results, and an inductor with a Q‐factor of 75 at 1GHz has been fabricated by using the internal stress of a MoCr film. The MEMS inductor improves the performance of a voltage controlled oscillator (VCO), but proper hermetic packaging and standard libraries are also necessary for mass production. The MEMS resonator can operate up to 1.4 GHz and can be used as an oscillator for the timing device as well as component of the filter circuit. The SiTime Company recently has started delivery of a product with performance similar to the quartz oscillator, in which they solved the reliability issues by modifying the annealing and vacuum packaging. Copyright © 2007 Institute of Electrical Engineers of Japan© 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. 相似文献
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RF fiber-optic link performance 总被引:2,自引:0,他引:2
Applications that involve point-to-point routing of analog signals have benefited from the excellent propagation characteristics of optical fiber. Fiber-optic links that remote RF signals to and from phased-array radar antennas must meet especially stringent performance requirements. The past decade has seen significant progress in the performance of the fiber-optic links that distribute RF signals in antenna-remoting applications, as well as in cellular communications and cable television signal distribution networks. This article reviews the present state of the art in RF fiber-optic links 相似文献
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It seems RF will remain a popular phrase for some time to come. Components and circuits whose design share a number of these concerns are RF, regardless of the numerical value of the frequency or bandwidth of electromagnetic signals involved. With a definition based on the designers' mind-set, we can include many kinds of components under the umbrella of RF at virtually any frequency from LF to IR 相似文献
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《Microwave Magazine, IEEE》2006,7(2):10-12
In this new environment, South Asia provides the market and most of the labor. The need is for highly affordable solutions for the mass market. This is a great opportunity for the U.S. industry and the experts in the United States. They have the technical and managerial capability to provide the best solution to meet these objectives in partnership with the local talent in India. These solutions, while successful in India, would be even more successful elsewhere in the world. Considering all these factors, concerns about outsourcing of RF technology development to India appear to be somewhat exaggerated. 相似文献
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RF filtering in mobile terminals is dominated by surface acoustic wave (SAW) and bulk acoustic wave (BAW) based filters due to their high performance, small size, and low cost. As compared to SAW filter technology, BAW filter solutions can provide lower insertion loss, better selectivity, higher power handling, higher operation frequency, and better ESD protection. With these advantages, BAW filter technology has been gaining more market share in wireless communication application. 相似文献
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Rebeiz G. Entesari K. Reines I. Park S.-j. El-tanani M. Grichener A. Brown A. 《Microwave Magazine, IEEE》2009,10(6):55-72
RF MEMS technology was initially developed as a replacement for GaAs HEMT switches and p-i-n diodes for low-loss switching networks and X-band to mm-wave phase shifters. However, we have found that its very low loss properties (high device Q), its simple microwave circuit model and zero power consumption, its high power (voltage/current) handling capabilities, and its very low distortion properties, all make it the ideal tuning device for reconfigurable filters, antennas and impedance matching networks. In fact, reconfigurable networks are currently being funded at the same level-if not higher-than RF MEMS phase shifters, and in our opinion, are much more challenging for high-Q designs. 相似文献