Error Tolerant DNA Self-Assembly Using ( $hbox{2}k-hbox{1}$)$times$( $hbox{2}k-hbox{1}$) Snake Tile Sets

DNA self-assembly has been advocated as a possible technique for bottom-up manufacturing of scaffolds for computing systems in the nanoscale region. However, self-assembly is affected by different types of errors (such as growth and facet roughening) that severely limit its applicability. Different methods for reducing the error rate of self-assembly using tiles as basic elements have been proposed. A particularly effective method relies on snake tile sets that utilize a square block of even size (i.e., 2k times 2k tiles, k = 2, 3,.. .). In this paper, an odd-sized square block [i.e., (2k -1) times (2k - 1)] is proposed as basis for the snake tile set. Compared with other tile sets, the proposed snake tile sets achieve a considerable reduction in error rate at a very modest reduction in growth rate. Growth and facet roughening errors are considered and analytical results are presented to prove the reduction in error rate compared with an even-sized snake tile set. Simulation results are provided.     

Optical Fiber Humidity Sensors Using Nanostructured Coatings of SiO$_{2}$ Nanoparticles

In this paper, a new optical fiber humidity sensor based on superhydrophilic coating is proposed. The electrostatic self-assembly technique has been used to create a nanometric scale surface on the tip of a standard single-mode pigtail. The fabricated sensor has demonstrated a good linearity in the range from 40% to 98% of relative humidity (RH). A variation of 10 dB in reflected optical power is achieved with a response time of only 150 ms. Among other applications, this sensor is intended to be used for monitoring the human breathing, so high dynamic performances are required, specially in the higher RH ranges.     

Electric Field Sensing Scheme Based on Matched $ hbox{LiNbO}_{3}$ Electro-Optic Retarders

In this paper, a wideband-electric-field-sensing scheme that uses optically matched integrated optics electrooptic devices and coherence modulation of light is described. In a coherence modulation scheme, the integrated optics sensor detects the electric field and imprints it around an optical delay. The optical delay is generated by a birefringent optical waveguide in a lithium niobate (LiNbO₃) integrated optics two-wave interferometer. The modulated optical delay, acting as an information carrier, is transmitted through an optical fiber channel. At the receiver, light is demodulated by a second integrated optics two-wave interferometer, which also introduces a second optical delay. The optical delays on the sensor and demodulator are matched at the same value. The integrated optics demodulator measures the autocorrelation of light around the optical delay value, and the imprinted electric field is recuperated as a linear variation of the received optical power. The matching of the sensor and demodulator allows a direct detection of the electric field, giving a unique feature to this fiber-integrated optics scheme. The experimental setup described here uses two pigtailed LiNbO₃ electrooptic crystals: one acting as the electric field sensor and the other acting as the optical demodulator. The wideband sensing range on the experimental setup corresponds to frequencies between 0 and 20 kHz.     

Circuit-Coupled ${bf t}_{0}hbox {-}phi$ Formulation With Surface Impedance Condition

A finite-element formulation based on the use of magnetic scalar potential is proposed. It allows to describe circuit-coupled electromagnetic formulation using magnetic scalar potential in presence of multiply connected solid conductors (with holes), treated by surface impedance condition. This formulation offers powerful solutions at a low cost. An example of application is given.     

Surface Roughness in Plasma-Etched $hbox{As}_{bf 2}hbox{S}_{bf 3}$ Films: Its Origin and Improvement

We describe the microstructure of As₂S₃ films and its effect on the morphology of plasma-etched surfaces. The Raman spectroscopy and X-ray photoelectron spectroscopy demonstrated that the observed grainy morphology of etched As₂S₃ surfaces comes from differential chemical attack between different phases within the film. Two approaches were found to be effective for improving the smoothness of etched surfaces: a change in the plasma chemistry from CF₄-O₂ to CHF₃-O₂ and the application of a thin-conformal coating onto structures already patterned using CF₄-O₂ plasma.     

Microsystem With Fluidic and Optical Interface for Inline Measurement of ${rm CO}_{2}$ in Oil Fields

Motivated by the need for inline measurements in natural gas and oil exploitation, we developed a microfluidic system which is suitable for chemical measurements by optical methods. It consists of a microfluidic system allowing the separation of gas and liquid phases so that gas can be optically analyzed. This system takes advantage of surface tension effects in tiny microchannels. The application is the measurement of carbon dioxide (CO₂) concentration by evaluating absorption of infrared light at a wavelength of 4.24 mum. Measurements have been successfully performed in the 0-70 bars pressure range.     

Characterization of the Temperature Dependence of the Piezoresistive Coefficients of Silicon From ${-}150,^{circ}$C to ${+}125,^{circ}$C

Stress sensing test chips are widely utilized to investigate integrated circuit die stresses arising from assembly and packaging operations. In order to utilize these test chips to measure stresses over a wide range of temperatures, one must have values of six piezoresistive coefficients for n- and p-type silicon over the temperature range of interest. However, the literature provides limited data over the desired range, and even the data at room temperature exhibit wide discrepancies in magnitude as well as sign. Thus, this work focuses on an extensive experimental study of the temperature dependence of the fundamental piezoresistive coefficients, pi₁₁, pi₁₂, and pi₄₄, for both p- and n-type silicon from -150degC to +125degC, as well as a number of useful combined coefficients. Measurements were performed using stress sensors fabricated on (001) silicon. In order to minimize errors associated with misalignment with the crystallographic axes on (001) silicon wafers, anisotropic wet etching was used to accurately locate the axes. Four-point bending (4PB) was used to generate the required stress in strip-on-beam samples, and finite-element simulations were used to determine the states of stress in the silicon material.     

SiGe/Si Quantum-Dot Infrared Photodetectors With ${bm delta}$ Doping

The multicolor absorption of MOS SiGe/Si quantum-dot (QD) infrared photodetectors is demonstrated using the boron $delta$-doping in Si spacers. The energy-dispersive X-ray spectroscopy shows that the Ge concentration in the wetting layers is much smaller than that in QDs. Most holes stay at the ground state in QDs instead of wetting layers. The energy band structure in QDs is calculated to understand the absorption spectrum. The absorption at 3.7–6 $mu$m is due to the intersubband transition in the SiGe QDs. The other absorption at 6–16 $mu$ m mainly comes from the intraband transition in the boron $delta$ -doping wells. Since the broadband spectrum covers most of the atmospheric transmission windows for infrared, the broadband detection is feasible using this device.      

Raman Studies of ${rm Ti}_{bm{ 1-x}} {rm Fe}_{bm x} {rm O}_{bm 2}$ Nanoparticles

Ti_1-xFe_xO₂ (x = 0.00-0.13) nanoparticle samples were prepared by hydrolysis method. We investigated the effects of Fe doping on the structural and magnetic properties of the Ti_1-xFe_xO₂ nanoparticle system. Scanning electron microscopy and X-ray diffraction measurements confirm that the particle size of the powder is in nanoscale, and that the magnetic Fe impurities substitute for the Ti sites in the anatase TiO₂ phase. All the samples with x > 0 were found to be super-paramagnetic at room temperature by magnetization measurements. Raman spectra also strongly support that the Fe atoms go into the Ti-site in theTiO₂ structure. For comparison, ceramic Ti_1-xFe_xO₂ samples were also prepared by usual ceramic method. Ferromagnetism was observed only in the ceramic Ti_1-xFe_xO₂ system. Additional Raman peak at around 610 cm^-1 is observed only in the ceramic samples. This may be related to the clusters created by mixture of various valence state of Fe, which probably would be the cause for ferromagnetism observed in the ceramic Ti_1-xFe_xO₂ system.     

Domain Structure in (NiFe/Au/Co/Au)$_{10}$ Multilayers With Perpendicular Anisotropy of Co Layers

Results of domain structures observation of individual Ni $_{80}$Fe $_{20}$ and Co sublayers in sputter deposited (NiFe/Au/Co/Au)$_{10}$ multilayers, using an element-sensitive method: the photoemission electron microscopy combined with soft X-ray magnetic circular dichroism, are presented. Also, overall domain structures were studied with magnetic force microscopy. The studies allowed us to reveal submicron stripe domains in the investigated samples and the replication of the stripe domains from the Co layers with perpendicular anisotropy to the NiFe layers with easy-plane anisotropy.      

Bit Storage by 360 $^{circ}$ Domain Walls in Ferromagnetic Nanorings

We propose a theoretical design for a magnetic memory cell, based on thin-film ferromagnetic nanorings, that can efficiently store, record, and read out information. An information bit is represented by the polarity of a stable 360$^{circ}$ domain wall introduced into the ring. Switching between the two magnetization states is done by a current applied to a wire passing through the ring, whereby the 360$^{circ}$ domain wall splits into two charged 180 $^{circ}$ walls, which then move to the opposite extreme of the ring to recombine into a 360 $^{circ}$ wall of the opposite polarity.      

Spin Seebeck Effect in Ni$_{81}$Fe$_{19}$/Pt Thin Films With Different Widths

The spin Seebeck effect (SSE) has been measured in Ni $_{81}$Fe $_{19}$ thin films which have different widths by using the inverse spin Hall effect (ISHE) in a Pt wire. The ISHE voltage induced by SSE is enhanced by lengthening the Pt wire. Combined with ISHE, SSE is applicable to the production of electric generators in which the thermoelectric figures of merit are tunable in terms of device structure.      

Comparison of the ${mbi A}^{*}{-}{mbi A}$ and ${mbi T}, Phi{-}Phi$ Formulations for the 2-D Analysis of Solid-Rotor Induction Machines

We present two eddy-current field potential formulations to solve rotating electrical machine problems by applying the finite-element method (FEM) using the motional ${mbi A}^{*}{-}{mbi A}$-potential formulation and the motional ${mbi T}, {bf Phi}{-}{bf Phi}$-potential formulation. We use the single-phase and three-phase solid-rotor induction motors of Problem No. 30a of TEAM Workshops to compare the potential formulations. We have solved both problems in the time domain and the frequency domain.      

Thermal Diffusivity and Related Properties of Colossal Magnetoresistive La$_{0.67}$Ca$_{0.33}$MnO $_{3}$ With Various Grain Sizes

Using the open-cell photoacoustic technique, we have measured the room-temperature thermal diffusivities of the colossal magnetoresistive material La$_{0.67}$Ca$_{0.33}$MnO$_{3 }$, sintered between 1100$;^{circ}$ C and 1350$;^{circ}$ C, with average grain sizes 1, 3, 5, and 10 $mu$m. We obtained the thermal diffusivities by analyzing the phase of photoacoustic signals in thermally thick samples using Calderon's method. We found that the insulator-metal transition temperature does not depend on the grain size ($T_{rm IM} sim 272$ K). However, the thermal diffusivity increases with grain size, with values between 0.431 and 0.969 mm $^{2}$s $^{-1}$. Other related electrical and thermal properties, including the electrical conductivity, thermal conductivity, and phonon mean free path, are also dependent on the grain size. The electronic contribution to the thermal conductivity is 2%–3% of the total thermal conductivity for smaller grain sizes (1–5 $mu$m) and increases to about 24% when the grain size is increased to 10 $mu$ m.      

Structural Stability and Magnetic Properties of the TbCu$_{7}$ -Type SmCo$_{x - 0.4}$Ti$_{0.4} (x = 5.0hbox{–}8.5)$ Alloys

We have studied the composition dependence, thermal stability, long-term stability at 500°C, and magnetic properties of the nanostructural TbCu₇-type (1:7) Sm-Co-Ti alloys. We prepared the SmCox-0.4Ti_0.4 alloys with a wide composition range from x = 5.0 to x = 8.5 by high-energy ball-milling, followed by annealing at 700-1100°C for 2 h. After annealing at 700°C, the powders with x = 7.0-8.5 showed a single 1:7 structure, while the powders with x = 5.0-6.5 presented the 1:7 plus CaCu₅-type (1:5) structure. At an annealing temperature higher than 800°C, a minor Th₂Zn₁₇-type (2:17) phase precipitated in the matrix of the 1:7 phase. Intrinsic coercivity iHc exhibits a maximum of 2.3 T at room temperature and 0.4 T at 500°C in the x = 7.0 samples annealed at 700°C. The temperature coefficient of iHc seems stable as the Sm/Co ratio changes from 1/6.5 to 1/7.5. The coercivity decreased with increasing annealing temperature Ta, from 2.3 T at Ta = 700°C to 1.3 T at Ta = 1100°C, which is mainly attributed to the grain growth from 35 nm for Ta = 700°C to 1 ?m for Ta = 1100°C. After holding at 500°C for up to 360 h, the microstructure and magnetic properties of the 1:7-type nanograin alloys remained almost unchanged, indicating a structurally and magnetically long-term stabilization at the potential high-temperature application environment.     

A Very Low Offset Preamplifier for Voltage Measurements in the $muhbox{V}$ Range

A new topology for the implementation of a very low offset voltage preamplifier is presented. The new topology employs a time-varying resistance as a probe for detecting the sign and magnitude of the equivalent input offset of an operational amplifier in a series-shunt feedback configuration and allows for continuously correcting the offset voltage by means of a proper control feedback. The most remarkable feature of the approach we propose is the fact that the offset correction can continuously be performed with the signal voltage source connected to the circuit, as its presence and magnitude do not affect the offset detection circuit. At the same time, the offset cancellation circuit has minimum effect on the output voltage of the preamplifier in the bandwidth of the signal. An actual low-offset preamplifier based on the new approach we propose has been built and tested. While employing a metal–oxide–semiconductor field-effect transistor (MOSFET) input operational amplifier with a typical input offset of 100 $muhbox{V}$ (600- $muhbox{V}$ maximum), a voltage preamplifier with a gain of 201 and an equivalent input offset voltage below 100 nV is consistently obtained, which is independent, by design, of the temperature. While characterized by these excellent performances, the system employs quite standard low-cost components and does not require any calibration procedure.      

Study of Pseudo Spin Valves Based on $L1_{0}$ (111)-Oriented FePt and FePtCu Fixed Layer With Tilted Magnetocrystalline Anisotropy

In this paper, we demonstrate a series of pseudo-spin-valve structures based on L1₀ (111)-oriented FePt and FePtCu with titled magnetocrystalline anisotropy. Highly ordered (111)-oriented L1₀ FePtCu with large anisotropy is achieved by optimizing the Cu content. Magnetoresistance (MR) up to 5% has been obtained by 1) optimizing the FePtCu growth using different underlayers, 2) enhancing the interface spin polarization using thin CoFe at the Cu interfaces, and 3) adjusting the Cu spacer thickness. The substantial MR realized with tilted fixed layer magnetization is an important prerequisite for the realization of tilted polarizer spin torque oscillators (STOs) or spin-transfer torque magnetoresistive random access memories (STT-MRAMs).     

A $hbox{TiSi}_{2}/hbox{Si}$ Heteronanocrystal Memory Operated With Hot Carrier Injections

The programming and erasing of a TiSi₂ /Si heteronanocrystal memory were carried out by channel hot electron injection and drain side hot hole injection, respectively. Compared to an Si nanocrystal memory, a TiSi₂ /Si heteronanocrystal memory exhibits much better writing/erasing efficiency and higher writing/erasing saturation level. The retention transient process indicates that the TiSi₂ /Si heteronanocrystal memory has a very slow charge loss mechanism. The result of the localization of charge shows that a reverse read leads to a higher threshold voltage shift, which is almost not dependent on the amplitude of the read voltages.     

Development of a High-k Pr $_{2}$O $_{3}$ Sensing Membrane for pH-ISFET Application

In order to develop a pH sensor having a good pH-sensing characteristic, electrolyte-insulator-semiconductor capacitors using a high-k Pr$_{2}$O$_{3}$ thin film as the sensing membrane were fabricated on silicon substrates by reactive radio frequency sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. The Pr$_{2}$O $_{3}$ sensing film after annealing at 900$;^{circ}$C is suggested to the increase in the interfacial SiO $_{2}$ and silicate formation, and the high surface roughness. Therefore, a physical vapor deposition Pr$_{2}$O $_{3}$ film is adopted as a new pH-sensing layer. The result produces a pH response of 52.9 mV/pH $({rm pH}=2hbox{--}12)$, a hysteresis voltage of 17.5 mV $({rm pH}=7 to 4 to 7to 10 to 7)$, and a drift rate of 2.15 mV/h (${rm pH}=7$ buffer solution).