切削液对电火花线切割加工TiN／Si3N4纳米复相陶瓷工艺的影响

本文通过实验研究了不同的切削液对电火花线切割加工TiN／Si3N4纳米复相陶瓷的加工速度和表面粗糙度的影响规律,对TiN／Si3N4纳米复相陶瓷的推广应用提供了重要的参考价值。     

PA66/Si_3N_4纳米复合材料的摩擦磨损性能

采用双螺杆挤出机熔融共混和注射成型方法制备了PA66/Si3N4纳米复合材料.研究了纳米Si3N4添加量对复合材料的力学性能和摩擦磨损性能的影响.通过对试样磨损表面及其对摩副表面上转移膜的扫描电子显微镜(SEM)观察和X射线光电子能谱(XPS)分析,探讨了其磨损机制.结果表明,纳米Si3N4的加入降低了基体的拉伸强度和弯曲强度,但是在PA66中加入适量的纳米Si3N4颗粒后,摩擦过程中有利于生成较均匀的转移膜,从而降低摩擦因数.同时磨屑里的纳米Si3N4镶嵌到试样摩擦表面,使表面得到局部增强,从而提高其耐磨性能.     

动态电场诱导氧化实现纳米结构的加工

利用原子力显微镜 (AFM )进行表面的局部氧化加工是进行纳米结构加工的一种很有前途的方法。它具有广泛的应用范围 ,可以进行功能性纳米电子器件和纳米机械结构的加工。实验采用了动态电场作用下的AFM诱导氧化的方法 ,提高了氧化物的生长速度 ,并且改善了氧化结构的纵横比 ,能够更好地控制生成氧化物的结构和电属性。     

SiC抛光片表面氧化行为的XPSS、EM研究

本文利用扫描电子显微镜和X光电子能谱研究SiC抛光片表面氧化行为,发现Si面比C面的氧化更显著,产生更多的氧化产物,提出利用扫描电子显微镜和X光电子能谱来鉴别SiC晶片的Si面和C面的新方法。     

外加电压对AFM阳极氧化加工的作用机理

利用原子力显微镜AFM进行阳极氧化纳米刻蚀加工的实质是电场作用下发生的电化学反应,外加电压是影响氧化加工的最重要的因素。在氧化加工过程中,外加电压存在着阈值。分析了电压的大小、类型对氧化物的结构和生长速率产生的具体影响,偏压的提高可以获得较厚的氧化物,氧化速率随氧化层厚度下降,而调节电压脉冲峰值、周期、频率可以增强氧化物的生长速率,提高氧化物的纵横比。说明通过控制电压可以控制实现对氧化过程的控制,而交流脉冲电压对阳极氧化加工最为有利。     

Si_3N_4陶瓷材料的磨削试验研究

通过用树脂结合剂金刚石砂轮对Si3 N4陶瓷进行磨削试验 ,从磨削过程中的磨削力、磨削比能、磨削温度及磨削表面的微观形貌变化等方面 ,综合探讨Si3 N4材料的磨削加工机理。研究结果表明 :Si3 N4在磨削加工中在磨粒切深较大时主要以脆性断裂方式去除 ,其磨削温度与材料去除机理有着密切联系。     

Si含量对TaN/TiSiN纳米多层膜结构和性能的影响

采用磁控溅射技术在304不锈钢和硬质合金刀片上交替沉积TaN、TiSiN层,制备不同Si含量的TaN/TiSiN纳米多层膜.通过X射线衍射仪、扫描电子显微镜、纳米压痕仪、原子力显微镜和摩擦磨损试验机等仪器的测试结果来表征其微观结构、硬度、表面粗糙度及摩擦学等性能.不同Si含量的TaN/TiSiN纳米多层膜均在(200)晶面呈现择优取向,并且衍射峰随着Si含量的增加向右偏移,当Si含量为10％时,衍射峰的偏移量最大.随着Si含量的增加,TaN/TiSiN纳米多层膜的硬度先升高后降低,当Si含量为10％时,硬度最大,达到25.8 GPa.表面粗糙度值随着Si含量的增加先减小后增大,随后又减小,当Si含量为15％时,TaN/TiSiN纳米多层膜的表面最光滑,表面粗糙度值最小,为Ra 2.34 nm.摩擦系数和主切削力均随着Si含量的增加先减小后增大,当Si含量为15％时,摩擦系数最小,耐磨性能最好,主切削力最小;研究结果表明,掺入适量的Si元素可以有效地提高TaN/TiSiN纳米多层膜的硬度、耐磨性能和切削性能.     

Si含量对TaN/TiSiN纳米多层膜结构和性能的影响

采用磁控溅射技术在304不锈钢和硬质合金刀片上交替沉积TaN、TiSiN层,制备不同Si含量的TaN/TiSiN纳米多层膜.通过X射线衍射仪、扫描电子显微镜、纳米压痕仪、原子力显微镜和摩擦磨损试验机等仪器的测试结果来表征其微观结构、硬度、表面粗糙度及摩擦学等性能.不同Si含量的TaN/TiSiN纳米多层膜均在(200)晶面呈现择优取向,并且衍射峰随着Si含量的增加向右偏移,当Si含量为10％时,衍射峰的偏移量最大.随着Si含量的增加,TaN/TiSiN纳米多层膜的硬度先升高后降低,当Si含量为10％时,硬度最大,达到25.8 GPa.表面粗糙度值随着Si含量的增加先减小后增大,随后又减小,当Si含量为15％时,TaN/TiSiN纳米多层膜的表面最光滑,表面粗糙度值最小,为Ra 2.34 nm.摩擦系数和主切削力均随着Si含量的增加先减小后增大,当Si含量为15％时,摩擦系数最小,耐磨性能最好,主切削力最小;研究结果表明,掺入适量的Si元素可以有效地提高TaN/TiSiN纳米多层膜的硬度、耐磨性能和切削性能.     

氩离子束蚀刻加工的柱体微透镜阵列

理论研究表明，氩离子束蚀刻加工柱体非球面微透镜阵列，柱体球面微透镜阵列和微棱镜阵列具有巨大潜力。实验结果证明，硅（Si）基片上表面轮廓为球面和椭圆面柱体微透镜阵列，表面质量好，均匀一致性佳。给出各种基片材料例如ZrO2，InP，SiO2（石英玻璃）和Si以及相对高温固结光致抗蚀剂（BP212）掩模材料的Ar离子能量和Ar离子束蚀刻速率之间的关系曲线。可以认为，这种技术可用来加工大面积不同表面轮廓柱体微透镜阵列和微核镜阵列。     

Si3N4陶瓷材料的磨削试验研究

通过用树脂结合剂金刚石砂轮对Si3N4陶瓷进行磨削试验，从磨削过程中的磨削力、磨削比能、磨削温度及磨削表面的微观形貌变化等方面，综合探讨Si3N4材料的磨削加工机理。研究结果表明：Si3N4在磨削加工中在磨粒切深较大时主要以脆性断裂方式去除，其磨削温度与材料去除机理有着密切联系。     

Lift-off patterning of thin Au films on Si surfaces with atomic force microscopy

We studied a new lift-off process of thin Au film on silicon surfaces in nanometer-scale, combining anodic oxidation patterning with AFM, deposition of Au thin film on the patterned substrate and chemical etching processes of the Si oxide underneath the Au film. For Au films of thickness of 2-5 nm, the Au films on the Si oxide patterns were left unbroken and bent down to stick to Si surface after the removal of the oxide by the chemical etching. For an Au film of 1 nm in thickness, it was possible to lift-off the Au film on oxide patterns of the lines and dots in nanometer-scale using Si oxide as a sacrificial mask.     

Surface modification of an organosilane self-assembled monolayer on silicon substrates using atomic force microscopy: scanning probe electrochemistry toward nanolithography

Organosilane self-assembled monolayers (SAMs) have been applied to resist materials for nanolithography based on scanning probe microscopy. An organosilane SAM was prepared on Si substrates from a precursor, that is octadecyltrimethoxysilane. Using an atomic force microscope with a conductive probe, current was injected from the probe into the SAM-covered Si substrate so that the SAM was locally degraded at the probe-contacting point. Nanoscale patterns drawn on the SAM was clearly imaged by lateral force microscopy. The patterning could be conducted in air while, in vacuum at the order of 10(-6) Torr, no detectable patterns were fabricated. The presence of adsorbed water at the probe/sample junction was confirmed to be crucial for the patterning of the SAM/Si. Its mechanism was, thus, ascribed to electrochemical reactions of both the SAM and Si with adsorbed water.     

Nanotribological properties of silicon nano-pillars coated by a Z-DOL lubricating film

This paper reports a novel approach for improving the nanotribological properties of silicon (Si) surfaces by topographically and chemically modifying the surfaces. In the first step, Si (100) wafers were topographically modified into nano-pillars by using the photolithography and reactive ion etching (RIE) techniques. Various patterns, including nano-pillars of varying diameters and pitches (distance between pillars), were fabricated. Then, the patterns were coated with a Z-DOL (perfluoropolyether (PFPE)) lubricating film using a dipcoating technique, and this process was followed by thermal treatment. These modified surfaces were tested for their nanotribological properties, namely adhesion and friction forces, using an atomic force microscope (AFM). The results showed that the topographical modification and Z-DOL coating each independently reduced the adhesion and friction forces on the Si surfaces. However, the combination of the two surface treatments was most effective in reducing these forces. This is attributed to the combined effects of the reduction in the real area of contact due to patterning and the low surface energy of the Z-DOL lubricant. Further, it was found that adhesion and friction forces of the surfaces with combined modification varied significantly depending on the diameter of the pillars and the pitch. It is proposed that such a combination of surface modifications promises to be an effective method to improve the nanotribological performance of miniaturized devices, such as MEMS, in which Si is a typical material.     

Nanofabrication of arbitrary patterns by nano plastic forming and etching (NPFE)

In this paper, flexibility of nano plastic forming and etching, an ultra-high resolution nanofabrication process developed recently by the authors, in terms of fabrication of arbitrary patterns as well as applicability to various work materials is demonstrated. First, a thin layer of nickel (Ni) is deposited on a silicon (Si) substrate. Then, it is directly patterned by nano plastic forming. Next, the patterned Ni mask is slightly etched by direct current sputter etching to transfer the pattern into the entire mask thickness and expose the surface of the substrate in the individual patterned areas. Afterward, the pattern is transferred onto the substrate by reactive ion etching. Finally, the remained Ni layer is removed from the substrate, and nanostructures fabricated on the surface of the substrate are revealed. Fabrication of grid patterns with various pitch settings on the surface of Si substrates is demonstrated. The experimental results indicate that the depth and width of the nanostructures can be controlled by the etching time. Also, it is confirmed from the results that the depth and width are not influenced by the pitch setting.     

Tribological Properties of Patterned NiFe-Covered Si Surfaces

The tribological properties of patterned surfaces were investigated under lubricated conditions. Micropatterns were fabricated on a Si surface using a combination of photolithography and plasma etching. NiFe film with a 150 nm thickness was then deposited on the patterned Si surface. We prepared four kinds of patterned surfaces: dimple, grating, bump, and mesh patterns. The dimensions of the patterns were: size 30–40 μm, pitch 120 μm, and depth 10–12 μm. Friction tests were carried out using a pin-on-plate tribometer. The pin specimen was made of cast iron and had a flat end. The normal load was varied from 9.8 to 98 mN, and the average sliding speed from 1.0 to 5.0 mm s⁻¹. Slideway lubricating oils or a gear oil were used as the lubricant, and the ISO viscosity grades of these oils were VG32, VG68, and VG320. The results showed that the friction coefficients of the two reverse patterns showed very similar tendencies and that circular patterns had a lower friction coefficient than did the rectangular patterns at a high bearing characteristic number. The surface geometry of the Si surface did not affect the friction coefficients at a low bearing characteristic number.     

A Tribological Study of SU-8 Micro-Dot Patterns Printed on Si Surface in a Flat-on-Flat Reciprocating Sliding Test

Tribological properties of optimized SU-8 micro-dot patterns on Silicon (Si) were evaluated using a flat-on-flat tribometer. Sliding tests on the patterns were conducted against a SU-8 spin-coated 2 × 2 mm² Si substrate at varying normal loads at a fixed rotational speed. It was observed that the pitch of the SU-8 pattern on Si substrate had significant influence on the wear durability. Ultra-thin layer of perfluoropolyether was over-coated onto SU-8 micro-dot patterned specimens for enhanced wear durability, and the specimen of the optimized pitch 450 μm has shown a wear life of more than 100,000 cycles at a normal load of 650 mN.     

Polymer Jet Printing of SU-8 Micro-Dot Patterns on Si Surface: Optimization of Tribological Properties

Tribological properties of optimized SU-8 patterns (micro-dots with varying pitch) on Si (silicon) were evaluated using a ball-on-disk tribometer. Sliding tests on the patterns were conducted against a 2-mm diameter Si₃N₄ ball at varying normal loads and sliding velocities. It was observed that the pitch of the SU-8 pattern on Si substrate had a significant effect on the initial coefficient of friction and wear durability. Initial coefficient of friction studies have concluded that the SU-8 polymeric micro-dots improved the tribological properties by sharing the normal force and reducing the contact area. For the wear durability test, ultra-thin layer of perfluoropolyether was over-coated onto SU-8 micro-dot specimens, and the optimized pitch specimens have shown wear durability of more than 100,000 cycles at a normal load of 350 mN.     

High-resolution elastic strain measurement from electron backscatter diffraction patterns: new levels of sensitivity

In this paper, we demonstrate that the shift between similar features in two electron backscatter diffraction (EBSD) patterns can be measured using cross-correlation based methods to +/- 0.05 pixels. For a scintillator screen positioned to capture the usual large solid angle employed in EBSD orientation mapping this shift corresponds to only approximately 8.5 x 10(-5)rad at the pattern centre. For wide-angled EBSD patterns, the variation in the entire strain and rotation tensor can be determined from single patterns. Repeated measurements of small rotations applied to a single-crystal sample, determined using the shifts at four widely separated parts of the EBSD patterns, showed a standard deviation of 1.3 x 10(-4) averaged over components of the displacement gradient tensor. Variations in strains and rotations were measured across the interface in a cross-sectioned Si1-x Gex epilayer on a Si substrate. Expansion of the epilayer close to the section surface is accommodated by tensile strains and lattice curvature that extend a considerable distance into the substrate. Smaller and more localised shear strains are observed close to the substrate-layer interface. EBSD provides an impressive and unique combination of high strain sensitivity, high spatial resolution and ease of use.     

Microstructure and Magnetic Properties of Sputtered Co5 Sm Films

Co5Sm/Cr bilayer films were deposited on Si and glass slides by means of a Direct-Current(DC)magnetron sputtering system with substrate heating.Magnetic properties measurements show that the sample with glass substrate has a comparatively large coercivity(Hc=2 141.2 Oe)with a relatively low optimal temperature(Ts=350 ℃).X-ray diffraction patterns indicate that Cr presents a hexagonal-close-packed(hcp)texture on Si,while a body-centered-cubic(bcc)structure on glass substrate,which leads to Co5Sm films having different lattice constants on Si and glass substrates.At their optimal temperature,the grain size of the sample on glass slide is smaller with its size distribution more uniform.Concurrently,the shape of magnetic domain is more regular and ordered.The value of magnetic switching volume(V)for the film on glass is 1.65×10-18 cm3,smaller than that for films on Si.For the film on glass,the magnetization reversal mechanism is mainly influenced by magnetocrystalline anisotropy,the shape of the crystal grain and the stress in the film.     

Measurement of elastic strains and small lattice rotations using electron back scatter diffraction

A method is presented for the determination of elastic strains from electron back scatter diffraction patterns, which are obtained at high spatial resolution, from bulk specimens in a scanning electron microscope. It is estimated that the method is sensitive to strains of the order of 0.02%. Strains in Si(1-x)Ge(x) epitaxial layers grown on planar Si substrates were measured for x from 0.2 to 0.015, there being excellent agreement with X-ray diffraction results. Small lattice rotations can also be measured, the technique being sensitive to rotations of 0.01 degrees, which offers an improvement of approximately two orders of magnitude from the more usual EBSD measurements of misorientation. Small lattice rotations were measured in Si(0.85)Geo(0.15) grown on a patterned Si substrate and were consistent with elastic relaxation of the epilayer strain energy.