Practical microwave circuits for groove waveguides

Groove guides have been known for many years. No practical microwave circuits have yet been described although these types of transmission lines could be used in many cases. This paper discusses the physical realizability of some wide band designs such as matched load, directional coupler, hybrid coupler, bend and phase shifter. Both closed and open groove guides have been investigated. Optical type components seem to be inappropriate for groove guide transmission. The best way to design components for these guides is to adapt those of standard rectangular guides, which perturb only the Rf fields in the vicinity of the narrow walls and to optimize the dimensions of the groove structure as a function of the losses and the symmetry of the induced spurious modes.     

Low-loss fiber-chip coupling by InGaAsP/InP thick waveguides forguided-wave photonic integrated circuits

A generic waveguiding structure is reported with low coupling loss (⩽1 dB/facet) with lensed fibers and low propagation loss (⩽1 dB/cm). This structure is suitable for low loss guided-wave photonic integrated circuits including active elements such as switches, and passive interconnections such as mirrors, and allows low polarization dependent operation. Which is required for instance in wavelength demultiplexers. This structure based on a single epitaxy is of interest for low cost photonic switching fabrics     

Silicide resistors for integrated circuits

Thin-film resistors are useful in monolithic integrated circuits whenever high sheet resistance (ρs> 1 kΩ/sq) or radiation hardness are required. Silicide resistive films (MoSi2, CrSi2, and Si-Cr) deposited by dc sputtering have been shown to be compatible with monolithic circuit production end require no protective overlayer. Si-Cr films 200-300 Å thick have ρs, and temperature coefficients of resistance (TCR) ranging from about 1 kΩ/sq and +150 ppm/°C (CrSi2) to 20 kΩ/sq and -1400 ppm/°C (17 at % Cr). MoSi2is best suited for resistor applications requiring 100-200Ω/sq. MoSi2films are about 700 Å thick at 200 Ω/sq, compared to < 100 Å for 200-Ω/sq Ni-Cr, and their TCR is -125 ppm/°C. Typical stability for unprotected silicide resistors in TO-5 packages at 200°C, no load, is < ±3 percent during the first 200 h and < ± 0.5 percent during the next 2000 h. The films are stable during short term exposure to high temperatures as encountered during monolithic or hybrid circuit ceramic package sealing.     

Circulators for microwave and millimeter-wave integrated circuits

The requirements for circulators for use in combination with microwave and millimeter-wave integrated circuits are reviewed, with special emphasis on modules for phased-array antennas. Recent advances in broadbanding and in miniaturization are summarized. Novel types of circulators that are fabricated by attaching a ferrite disc and a suitable coupling structure to the surface of a dielectric of semiconductor substrate (quasimonolithic integration) are described. Methods for achieving complete monolithic integration are also discussed     

Vertically integrated silicon-on-insulator waveguides

A SiO₂-Si-SiO₂-Si-SiO₂-Si structure produced by the separation by implantation of oxygen (SIMOX) process used for dual vertically integrated waveguiding in silicon at λ=1.3 μm is discussed. Independent waveguiding is observed when 2-μm-thick Si cores are separated by 0.36-μm-thick SiO₂ . Coupled waveguiding is found for an 0.12-μm intercore oxide thickness     

Millimeter-wave integrated circuits

Monolithic millimeter-wave integrated circuits have been designed and fabricated on semi-insulating GaAs substrates using microstrip transmission lines. Circuits using hybrid techniques have also been constructed on quartz and ceramics. This paper shows that microstrip-line integrated circuits are feasible at millimeter-wave frequencies. Circuit functions have been constructed and tested in the 25- to 100-GHz range. The loss in microstrip line on semi-insulating GaAs was found to be less than 0.3 dB/λ. Couplers from waveguide to microstrip have been made with transmission losses less than 0.5 dB. Monolithic integrated detectors showed 5-dB better sensitivity than a 1N53 diode in a philips detector mount. Monolithic diodes delivered 1.5 mW at 28 GHz. The results are encouraging and a fully monolithic integrated receiver is under development.     

集成化故障检测电路设计

讨论了高频 (微波 )通讯系统中故障检测电路设计的一般方法及设计中应注意的问题 ,并给出了一个设计实例     

Charge-domain integrated circuits for signal processing

A new class of integrated circuits called charge-domain device has been developed for performing enhanced monolithic signal processing. All signal-processing operations are accomplished by splitting, routing and combining charge packets, thus overcoming many of the limitations of alternative devices such as charge-coupled device (CCD) split-electrode transversal filters and switched capacitor filters. Charge manipulation techniques are described which allow poles as well as zeros of a transfer function to be implemented efficiently, leading to infinite impulse response monolithic filters suitable for high-frequency applications. Several test filters, including a narrowband 8-pole bandpass filter, are demonstrated. These charge-domain devices are useful in applications ranging from radio IF to radar to video signal processing with a high level of integration achievable on a single charge-domain integrated circuit.     

Protective device for MOS integrated circuits

Two protective devices for MOS integrated circuits have been extensively tested and proved feasible. They also perform more reliably than conventional Zener diodes. One of them has been used in the fabrication of a dual 25-bit MOS and MNOS integrated shift register and performed reliably.     

Dielectric isolation techniques for integrated circuits

There has been an increasing interest in producing dielectrically isolated integrated circuits over the past five years for both bipolar and MOS. This impetus stems from the potential of such a technique to increase the operational speed of the circuit, particularly CMOS by reduction of the stray capacitance and a need to reduce the susceptibility of monolithic circuits to photocurrents generated by radiation in space and military environments. In general, early methods for producing dielectrically isolated circuits involved relatively costly lapping and polishing techniques which were generally low yield processes or the development of a completely new process e.g. silicon on sapphire. Recently, preferential anisotropic silicon etchants which may eliminate the mechanical process steps have been announced, as well as the possibility of ion implantation of heavy doses of nitrogen or oxygen at relatively high energies to produce the buried dielectric layer. These new processes will be compared with more traditional methods.     

Toroidal inductors for radio-frequency integrated circuits

Toroidal inductors achieve low loss by constraining magnetic flux to a well-defined path and away from ground planes and semiconducting substrates. This paper presents a micromachined implementation of the toroidal inductor, with focus primarily on microwave integrated circuits on a low-resistivity silicon wafer achieving a Q of 22 and a self-resonant frequency greater than 10 GHz. A verified analytic model is developed.     

Ceramic capacitors for hybrid integrated circuits

Ruggedness, wide capacitance range, high volumetric efficiency, and relatively attractive cost have been the main reasons for the popularity of ceramic chip capacitors. Continuing improvements in most of these categories promise to keep the ceramic chip in its present position of prominence. This article considers multilayer, single-layer, and screened-on configurations. In addition, relationships between size, capacitance, and cost are covered for three common ceramic formulations (NPO, W5R, and Z5U).     

Planariation technology for Josephson integrated circuits

Planarization technology has enabled completion of the multi-level layer structure, which is essential to the achievement of large-scale integration and high-speed operation. A new etch-back planarization technology, using 2000-molecular weight polystyrene, has been developed for Josephson integrated circuits (IC's). This technology has been applied to fabricating the multilevel layer structure in magnetic coupled gates. The results, indicated by their cross-sectional SEM photographs and measured breakdown voltages, show that excellent planarity was achieved in this structure     

SLIC-a simulator for linear integrated circuits

A computer program for the simulation of linear integrated circuits (SLIC) is described. The program formulates and solves nonlinear equations for d.c. node voltages and transistor operating points; generates linearized small-signal circuit models; and solves for the poles, zeros, frequency response, and noise response of specified transfer functions. Temperature variations and operating point dependence can be effectively simulated.     

GaAs HBT's for microwave integrated circuits

The status of the microwave GaAs heterojunction bipolar transistor (HBT) technology is reviewed. Microwave circuits for advanced military and commercial systems continue to increase their dependence on the performance, functionality, and cost of active components fabricated using solid-state technology. The performance advantages provided by GaAs HBT's, for several critical circuit applications, have stimulated a worldwide development activity. Progress in HBT device technology and microwave circuit applications has been extremely rapid because of the broad availability of III-V compound semiconductor epitaxial materials and prior experience with GaAs field-effect transistors (FET's) and monolithic microwave integrated circuits (MMIC's). The great flexibility of HBT's in microwave circuits makes them prime candidates for applications in complex multifunctional microwave/digital IC's in next-generation systems     

Proton isolation for GaAs integrated circuits

Significant improvement in the electrical isolation of closely spaced GaAs integrated circuit (IC) devices has been achieved with proton implantation. Isolation voltages have been increased by a factor of four in comparison to a selective implant process. In addition, the tendency of negatively biased ohmic contacts to reduce the current flow in neighboring MESFET's (backgating) has been reduced by at least a factor of three. The GaAs IC compatible process includes implantation of protons through the SiO2field oxide and a three-layered dielectric-Au mask which is definable to 3-µm linewidths and is easily removed. High temperature storage tests have demonstrated that proton isolation, with lifetimes on the order of 10⁶h at 290°C, is not a lifetime limiting component in a GaAs IC process.