Structure and properties of TiB<Subscript>2</Subscript> thin films deposited at low temperatures using RF magnetron sputtering

The TiB2 thin films were deposited on steel substrates using RF magnetron sputtering technique with the low normalized substrate temperature （0.1〈Ts/Tm〈0.2）. Microstructure of these films was obtained by field emission scanning electron microscope （FESEM） and the grazing incidence X-ray diffraction （GIXRD） characterization, while the composition of films was obtained using Auger emission spectroscopy （AES） analysis. It was found that the TiB2 thin films were overstoichiometric with the B/Ti ratio at 2.33 and the diffusion of Ti and B atoms on the substrate surface was greatly improved at 350 ℃. Moreover, a new dense structure, named ＂equiaxed＂ grain structure was observed by FESEM at this substrate temperature, Combined with FESEM and AES analysis, it was suggested that the ＂equiaxed＂ grain structure was located in Zone 2 at the normalized substrate temperature as low as 0.18.     

Photocatalytic activities of amorphous TiO<Subscript>2</Subscript>-Cr thin films prepared by magnetron sputtering

Chrome-doped titanium oxide films were prepared by reactive magnetron sputtering method. The films deposited on glass slides at room temperature were investigated by atom force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy, UV-Vis spectrophotometer, the photoluminescence （PL） and ellipse polarization apparatus. The results indicate that TiO2-Cr film exists in the form of amorphous. The prepared films possess a band gap of less than 3.20 eV, and a new absorption peak. The films, irradiated for 5 h under UV light, exhibit excellent photocatalytic activities with the optimum decomposition rate at 98.5% for methylene blue. Consequently, the thickness threshold on these films is 114 nm, at which the rate of photodegradation is 95% in 5 h. When the thickness is over 114 nm, the rate of photodegradation becomes stable. This result is completely different from that of crystalloid TiO2 thin film.     

Influence of thickness on the properties of solution-derived LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript> thin films

LiMn₂O₄ thin films of different thickness were derived from solution deposition and heat treated by rapid thermal annealing. The phase identification and surface morphology were studied by X-ray diffraction and scanning electron microscopy. The electrochemical properties of the films were examined by galvanostatic charge-discharge experiments and electrochemical impedance spectroscopy. LiMn₂O₄ thin films of different thickness derived from solution deposition and rapid thermal annealing are homogeneous and crack free with the grain size between 20 nm and 50 nm. The specific capacity of these films is between 42 and 47 μAh·cm²·μm⁻¹. The capacity decreases with the increase of discharge current density. The capacity loss per cycle increases from 0.012% to 0.16% after being cycled 50 times as the film thickness increases from 0.18 μm to 1.04 μm. The lithium diffusion coefficients of these films are in the same order of 10⁻¹¹ cm²·s⁻¹.     

Resistive switching behavior of Ag/Mg<Subscript>0.2</Subscript>Zn<Subscript>0.8</Subscript>O/ZnMn<Subscript>2</Subscript>O<Subscript>4</Subscript>/p<Superscript>+</Superscript>-Si heterostructure devices for nonvolatile memory applications

The Ag/Mg_0.2Zn_0.8O/ZnMn₂O₄/p⁺-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior, conduction mechanism, endurance characteristic, and retention properties were investigated. A distinct bipolar resistive switching behavior of the devices was observed at room temperature. The resistance ratio R _HRS/R _LRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V. The dominant conduction mechanism of the device is trap-controlled space charge limited current (SCLC). The devices exhibit good durability under 1×10³ cycles and the degradation is invisible for more than 10⁶ s.     

Enhanced photoelectric property of Mo-C codoped TiO<Subscript>2</Subscript> films deposited by RF magnetron cosputtering

Mo-C codoped TiO₂ films were prepared by RF magnetron cosputtering. Ultraviolet-visible spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, energy dispersive X-ray Analysis and X-Ray Diffraction were used to study the influences of codoping on energy gap, surface morphology, valence states of elements, ions content and crystal structure, respectively. The concentration of photogenerated carriers was measured by studying photocurrent density, while catalytic property was evaluated by observing degradation rate of methylene blue under visible light. A Mo-doped TiO₂ film, whose content of Mo had been optimized in advance, was prepared and later used for subsequent comparisons with codoped samples. The result indicates that Mo-C codoping could curtail the energy gap and shift the absorption edge toward visible range. Under the illumination of visible light, codoped TiO₂ films give rise to stronger photocurrent due to smaller band gaps. It is also found that Mo, C codoping results in a porous surface, whose area declines gradually with increasing carbon content. Carbon and Molybdenum doses were delicately optimized. Under the illumination of visible light, sample doped with 9.78at% carbon and 0.36at% Mo presents the strongest photocurrent which is about 8 times larger than undoped TiO₂ films, and about 6 times larger than samples doped with Mo only.     

Optical and magnetic properties of Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>/SiO<Subscript>2</Subscript> nano-composite films

Fe₂O₃/SiO₂ nano-composite films were prepared by sol-gel technique combining heat treatment in the range of 100–900 °C. The particle size was observed by FE-SEM. Optical properties of the films were investigated by UV-visible spectra. Structural and magnetic characteristics were investigated through FT-IR and VSM. The transparency of the Fe₂O₃/SiO₂ nano-composite films decreased with the content of the Fe₂O₃. Water and organic solvent in the films were evaporated with heat treatment, so the transparency of the films was enhanced under high temperature. It is also found that the saturation magnetization (M _s) of the films increases with the temperature. As the content of the Fe₂O₃ increases, when the content of the Fe₂O₃ is around 30wt%, the M _s of the films has a maximum value.     

Ferroelectric properties of Bi<Subscript>4</Subscript>Zr<Subscript>0.5</Subscript>Ti<Subscript>2.5</Subscript>O<Subscript>12</Subscript> thin films prepared on LaNiO<Subscript>3</Subscript> bottom electrode by sol-gel method

The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were characterized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue values. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect because of the BZT film's ferroelectric polarization.     

Preparation and characterization of CeO<Subscript>2</Subscript>-TiO<Subscript>2</Subscript>/SnO<Subscript>2</Subscript>:Sb films deposited on glass substrates by R.F. sputtering

CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.     

Effect of ZnO-B<Subscript>2</Subscript>O<Subscript>3</Subscript> glass addition on the microwave dielectric properties of BaO-Nd<Subscript>2</Subscript>O<Subscript>3</Subscript>-TiO<Subscript>2</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> system

The effect of ZnO-B₂O₃(ZB) glass addition on the sintering behavior, microstructures and microwave dielectric properties of BaO-Nd₂O₃-TiO₂-Bi₂O₃ (BNTB) system was investigated with the aid of X-ray diffraction, scanning electron microscopy and capacitance meter. It is found that the ZB glass addition, acting as a sintering aid, can effectively lower the sintering temperature of BNTB system to 850 °C. The dielectric constant of BNTB-ZB ceramics increases with the increase of soaking time and the value of dielectric loss decreased with increasing soak time. The optical dielectric properties at 1 GHz of ɛ=74, tan δ=4×10⁻⁴, and TCC=25 ppm/°c were obtained for the BNTB system doped with 25 wt% ZB glass sintered at 850 °C for 2 h, representing that the BNTB-ZB ceramics could be promising for multilayer low temperature co-fired ceramics applications.     

Preparation and characterization of nanocomposite MgFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/SiO<Subscript>2</Subscript>

Nanocomposites MgFe₂O₄/SiO₂ were successfully synthesized by the sol-gel method in the presence of N, N-dimethylformamide (DMF). The formation of pure MgFe₂O₄ was confirmed by powder X-ray diffraction (XRD) and electron diffraction. The structural evolution of MgFe₂O₄ nanocrystals was followed by powder X-ray diffraction and IR absorption spectroscopy. The formation of spinel structure of MgFe₂O₄ started at 800 °C, and completed at 900 °C. The transmission electron microscopy (TEM) measurements suggest that the particle sizes increase with the increasing annealing temperature, and the mean particle sizes of the spherical samples annealed at 800 °C, 900 °C and 1 050 °C are ca. 3 nm, 8 nm and 11 nm, respectively. Magnetization measurements at room temperature and 78 K indicate superparamagnetic nature of these MgFe₂O₄ nanocrystals. Funded by the National Natural Science Foundation of China(No. 30771676), the Natural Science Foundation of Jiangsu Province (No. BK20081842), and the Foundation of Nanjing Bureau of Personal for the Returned Overseas Chinese Excellent Scholars     

Effect of aluminum addition on microstructure and properties of SiO<Subscript>2</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-CaO vitrified bond

Influence of aluminum addition on the structures and properties of SiO₂-B₂O₃-Al₂O₃-CaO vitrified bond at low sintering temperature and high strength was discussed. FTIR and XRD analyses were used to characterize the structures of the basic vitrified bond with different contents of aluminum. The bending strength and the thermal expansion coefficients were also tested. Meanwhile, the microstructures of composite specimens at sintering temperature of 660 °C were observed by scanning electron microscope (SEM). The experimental results showed that the properties of vitrified bond with 1wt% aluminum were improved significantly, where the bending strength, Rockwell hardness, and thermal expansion coefficient of the vitrified bond reached 132 MPa, 63 HRB, and 6.73×10^-6 °C^-1, respectively.     

Thermal stability of LiFePO<Subscript>4</Subscript>/C-LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript> blended cathode materials

Safety is important to lithium ion battery materials. The thermal stability of LiFePO₄/C-LiMn₂O₄ blended cathode materials is characterized by using TG, XRD, and SEM etc. The results show that LiFePO₄/C-LiMn₂O₄ possesses a worse thermal stability than pure spinel LiMn₂O₄ and pure olivine LiFePO₄/C. When LiFePO₄/C-LiMn₂O₄ blended cathode materials are sintered at 500°C under Ar atmosphere, the sintered cathode materials emit O₂, and appear impurity phases (Li₃PO₄, Fe₂O₃, Mn₃O₄). It is deduced that some chemical reactions take place between different materials, which leads to a worse discharge specific capacity. LiFePO₄/C-LiMn₂O₄ blended cathode materials, therefore, need to be managed and controlled strictly for the sake of thermal stability and safety.     

Effects of NaNbO3-Co2O3 Co-additive on the Properties of PZN-PZT Ceramics

NaNbO3-Co2O3 co-added PZN-PZT （PZCNNT） ceramics were prepared using conventional solid state reaction. The piezoelectric and dielectric properties were measured. The experimental results show that the addition of 0.3mo1% Co2O3 leads to low dielectric loss （tgδ） in PZCNNT ceramics and the proper addition of NaNbO3 not only improves piezoelectric properties but also decreases intensively dielectric loss and mechanical loss. The optimal ceramic having d33=310 pC/N, kp=0.59, εr=985, tgδ=0.0034, Qm=1380 was obtained.     

Effect of La doping on microstructure and ferroelectric properties of Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films prepared by sol-gel method

The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.     

磁控溅射法制备的不同衬底上的TiO_2薄膜

利用射频磁控溅射方法,分别在改变氧气含量和沉积时间的条件下在ITO玻璃、Si和Al/ITO玻璃衬底上沉积了TiO2薄膜,并利用拉曼光谱表征了2种条件下的TiO2薄膜的结构.研究表明：衬底材料、氧气含量以及沉积时间明显地影响了TiO2薄膜的结构.随着氧气含量的降低,沉积在ITO玻璃衬底上的TiO2薄膜由锐钛矿和金红石的混合结构转变为单一的金红石结构,而沉积在Si衬底上的TiO2薄膜的结构没有改变,并保持单一的金红石结构;随着沉积时间的增加,Al/ITO玻璃衬底上的TiO2薄膜由金红石结构转变为锐钛矿结构.     

Structure and properties of Mg-doped SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> Bi-layered compounds

The structure and properties of Mg-doped SrBi4Ti4O15（SBT） were dicussed. Mg substitution into SBT had two possibilities states with the dopant amount variety. Mg cation substituted mostly into Sr^2＋ and the amount proportion was 68.11%.Mg ion will substitute into Ti ion site in perovskite layer when the doping amount increases. Polarization increases sharply when x=0.1 and then decreases becauses of the domain pinning. The Curie temperature of Mg-doped SBT is about 300 ℃ and there is a broad diffuse phase transition near Tc with a flat peak near the Ta of SBT.     

Optical properties and microstructure of Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films prepared by ion assisted electron beam evaporation

An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films. The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 55（1 nm. The surface morphology measured by atomic force microscopy （AFM） revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.     

Preparation,structure and dielectric properties of tungsten bronze ferroelectrics in SrO-Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>-TiO<Subscript>2</Subscript>-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Compounds Sr4Eu2Ti4Nb6O30 and Sr5EuTi3Nb7O30 with filled tetragonal tungsten bronze structure were prepared,and the dielectric characteristics and ferroelectric transition were investigated.Both ceramics displayed weak frequency dependence in room temperature dielectric constant,which decreased from 125 to 118 for Sr4Eu2Ti4Nb6O30,from 206 to 195 for Sr5EuTi3Nb7O30 in the frequency range of 10 kHz to 1 MHz.The present ceramics showed a diffuse ferroelectric phase transition.The frequency independent transition temperature (Tm) indicated the above compounds had no relaxor property.The diffuseness (γ) was 1.45 and 1.64 for Sr4Eu2Ti4Nb6O30 and Sr5EuTi3Nb7O30 respectively.The weak ferroelectric of the present materials are indicated from the P-E hysteresis loops,and a small 2Pr of 0.596 μC/cm2 and 0.068 μC/cm2 were observed for Sr4Eu2Ti4Nb6O30 and Sr5EuTi3Nb7O30 respectively.     

Dielectric properties of Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ceramics by impedance spectroscopic method

Various lead-free ceramics have been investigated in search for new high-temperature dielectrics. In particular, Bi₄Ti₃O₁₂ is a type of ferroelectric ceramics, which is supposed to replace leadcontaining ceramics for its outstanding dielectric properties in the near future. Ferroelectric ceramics of Bi₄Ti₃O₁₂ made by conventional mixed oxide route have been studied by impedance spectroscopy in a wide range of temperature. X-ray diffraction patterns show that Bi₄Ti₃O₁₂ ceramics are a single-phase of ferroelectric Bi-layered perovskite structure whether it is calcined at 800 °C or after sintering production. This study focused on the effect of the grain size on the electric properties of BIT ceramics. The BIT ceramics with different grain sizes were prepared at different sintering temperatures. Grain becomes coarser with the sintering temperature increasing by 50 °C, relative permittivity and dielectric loss also change a lot. When sintered at 1 100 °C, r values peak can reach 205.40 at a frequency of 100 kHz, the minimum dielectric losses of four different frequencies make no difference, all close to 0.027. The values of E _a range from 0.52 to 0.68 eV. The dielectric properties of the sample sintered at 1 100 °C are relatively better than those of the other samples by analyzing the relationship of the grain, the internal stresses, the homogeneity and the dielectric properties. SEM can better explain the results of the dielectric spectrum at different sintering temperatures. The results show that Bi₄Ti₃O₁₂ ceramics are a kind of dielectrics. Thus, Bi₄Ti₃O₁₂ can be used in high-temperature capacitors and microwave ceramics.     

Tensile properties of an aluminum matrix composite reinforced by SnO<Subscript>2</Subscript>-coated Al<Subscript>18</Subscript>B<Subscript>4</Subscript>O<Subscript>33</Subscript> whisker

Al18B4O33 whisker was coated by SnO2 particles using a chemical precipitation method, and an aluminum matrix composite reinforced by the coated whisker was fabricated by squeeze casting technique. It is found that the SnO2 coating can react with aluminum matrix during squeeze casting process, and Sn particles are induced near the interface between Al18B4O33 whisker and matrix. The tensile test at room temperature indicated that the tensile strength of Al18B4O33 whisker reinforced aluminum matrix composite can be enhanced by suitable content of SnO2 coating. The composites with various whisker coating contents exhibit maximum tensile plasticity at about 300 ℃, and the composite with a suitable whisker coating content could enhance its tensile plasticity evidently, which suggest that an Al18B4O33 whisker-Al composite with both high strength at room temperature and high formability at elevated temperature can be designed.