自动椭偏仪及其在LCD膜系测量中的应用

简要介绍了椭圆偏振测量术的基本原理,并对自动椭偏仪进行了介绍。由于自动椭偏仪具有无损探测、测量准确度高和测量迅速等特点,它非常适合用于LCD薄膜系统光学性质的在线测量。     

椭偏仪数据处理及误差修正

提出了一套对椭偏仪的测量误差进行有效修正的方案,设计了一个Windows版的椭偏仪测厚数据处理软件,并在该软件中嵌入了对测量数据的误差进行修正的方法,使椭偏仪的最终测量结果更加精确。制作了30片厚度梯度分布的标准样片（厚度20nm～1μm）,用于从“软”、“硬”件两个方面对椭偏仪进行误差修正,使最终的误差小于1％。本文所提出的修正方案具有一定的普适性、实用性。     

AUEL—Ⅲ型自动椭偏仪

本文介绍了我们研制成功的实用化的ＥＬ－Ⅲ型自动椭偏仪，经专家鉴定和用户使用证明本仪器的实用化和实用化和商品化程度高，功能和技术指标与国外同类产品相当，达到国际先进水平。     

斯托克斯椭偏仪仪器矩阵的条件数评价研究

斯托克斯椭偏仪一般使用定标的方法来测量其仪器矩阵,其仪器矩阵的优劣直接影响了被测光线斯托克斯参量的精确度与稳定度,从而影响了被测薄膜的厚度、折射率及消光系数等光学参数的精确度与稳定度。文章以椭偏参数总偏差为评价函数,分析了条件数大小与斯托克斯椭偏仪仪器矩阵的优劣关系,并从实验上证明了条件数较大时,仪器矩阵较差,测量结果偏差大;条件数较小时,仪器矩阵较优,测量结果较佳。     

基于Labview技术的光度式椭偏测厚仪的研究与设计

本文介绍了一种基于Labview的光度式椭偏仪光学测量系统,用于进行透明薄膜厚度的精确测量.研究并推导出该系统的数学模型及椭偏参数的计算公式.基于C9051F020单片机设计出椭偏仪的控制器并使用Labview编写了测量软件.在测量软件中嵌入Matlab Script节点,完成复杂运算.通过对SiO2薄膜的测试,验证了仪器具有良好的可靠性和重复性,薄膜厚度误差小于100 A,折射率误差小于0.01.     

椭偏仪测试数据处理的Windows软件的开发

本文提出了一种在Windows环境中用面向对象的类库OWL构造数据处理系统的方法，建成了数据处理系统的一系列子类，讨论了程序设计中的关键问题，并以此方法实现了基于Windows环境的椭偏仪数据处理系统。     

杂质分布的红外光谱椭偏分析方法

在半导体工艺中,掺杂杂质类型、浓度及结深的改变都会引起不同频率的红外光谱,介绍了一种通过红外椭偏仪测量浅结杂质分布的方法。利用Drude方程将Si中不同掺杂与其引起的光学常量的变化对应起来,通过红外椭偏分量Ψ和Δ的测量及模型拟合来测定半导体中载流子的浓度分布。并建立高斯渐变层模型,即将离子注入退火后的非均匀掺杂层分成n小层,各层载流子浓度之间符合高斯分布,且每一层载流子浓度可以用Drude方程来描述。测量采用了可变角度的红外光谱椭偏仪,该测量方法具有非接触性、非破坏性的优点,测量快捷方便。     

SiO2和ZrO2薄膜光学性能的椭偏光谱测量

用溶胶-凝胶工艺在碱性催化条件下,采用旋转镀膜法在K9玻璃上分别制备了性能稳定的单层SiO2薄膜与单层ZrO2薄膜。用反射式椭圆偏振光谱仪测试了薄膜的椭偏参数,并用Cauchy模型对椭偏参数进行数据拟合,获得了溶胶-凝胶SiO2与ZrO2薄膜在300~800 nm波段的色散关系。用紫外-可见分光光度计测量了薄膜的透射率,并与用椭偏仪换算出来的结果相比较;用原子力显微镜观察了薄膜的表面微结构,并讨论表面微结构与薄膜光学常数之间的关系。分析结果表明,Cauchy模型能较好的描述溶胶-凝胶薄膜的光学性能,较详细的得到了薄膜的折射率,消光系数等光学常数随波长λ的变化规律;薄膜光学常数的大小与薄膜的微结构有关。     

利用调制式椭偏仪测量薄膜电光系数

利用调制式的椭偏仪测量了掺镧锆钛酸铅PLZT薄膜的电光系数．首先用反射椭偏测量的方法得到薄膜的折射率(n)和厚度(d),然后利用透射椭偏在线测量的功能,在样品上加电场(E),得到薄膜的折射率的改变8n．最后用测量得到的厚度,折射率以及折射率的改变来计算薄膜的电光系数．该仪器的灵敏度很高,很适合较薄的膜层材料电光性质的测量．     

椭偏技术的原理及其在功能薄膜表征中的应用

随着计算机技术的不断发展，已有一百多年历史的椭偏技术的研究重点已从该技术本身转移到了它在材料分析中的新用途。通过介绍椭偏技术的测量原理，给出了椭偏仪在材料表征中的应用范围和局限。研究表明，结合其他分析工具并建立精细的椭偏模型，可变入射角光谱椭偏仪（ＶＡＳＥ）能定量测量各种功能金属氧化物薄膜的厚度、光学常数和气孔率。ＶＡＳＥ将在功能金属氧化物外延薄膜的生长控制和性能优化等方面发挥积极的作用。     

Noncontacting measurement of thickness of thin titanium silicidefilms using spectroscopic ellipsometer

Spectroscopic ellipsometry has gained increasing attention in semiconductor process control because the technique is nondestructive and noncontacting. This paper demonstrates the capability of spectroscopic ellipsometer to measure the thickness of conducting thin films of titanium silicide. Unlike cross section TEM measurement, this technique does not involve elaborate process of sample preparation. This technique does not require calibration and is used to determine thickness of silicide films from few tens of angstrom up to tens of nanometer. The thickness of titanium silicide film measured at a single point, using spectroscopic ellipsometer and TEM analysis differs by only 4%     

In-situ spectroscopic ellipsometry of HgCdTe

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.     

Specular spectroscopic scatterometry

Scatterometry is one of the few metrology candidates that has true in situ/in-line potential for deep submicrometer critical dimension (CD) and profile analysis. Most existing scatterometers are designed to measure multiple incident angles at a single wavelength on periodic gratings. We extend this idea by deploying specular spectroscopic scatterometry. Specular spectroscopic scatterometry (SS) is designed to measure the zeroth-order diffraction response at a fixed angle of incidence and multiple wavelengths. This mechanism allows the use of existing thin-film metrology equipment, such as spectroscopic ellipsometers, to accurately extract topographic profile information from one-dimensional (1-D) periodic structures. In this work, we developed the grating tool-kit (gtk), which implements several variants of rigorous coupled-wave analysis (RCWA) to accurately and efficiently simulate diffraction behavior of 1-D gratings. Theoretical simulations using this package show that specular spectroscopic scatterometry can be applied in the current semiconductor manufacturing technology, and can be easily extended to the 0.07-μm generation. We have also applied a library-based profile extraction methodology to resist and poly focus-exposure matrices patterned using 0.25and 0.18-μm lithography and etch technology, respectively, to extract their cross-sectional profiles. Discrepancies between CD-SEM, CD-AFM, and SSS measurements are discussed and explained     

The characterisation of GaAs on silicon using polarised laser light

MBE-grown gallium arsenide epitaxial layers on silicon, with thicknesses between 0.1 and 8.1 μm, have been studied using a simple rotating polariser multiple-angle-of-incidence ellipsometer. From these data, information on the roughness of the surfaces of the layers and the anisotropy of the refractive index of the layers has been obtained. The results are compared with data obtained on the same samples using scanning electron microscopy and conventional spectroscopic ellipsometry.     

In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B

We study the adsorption of Hg on CdTe(211)B using an 88-wavelength spectroscopic ellipsometer mounted on a commercial, molecular beam epitaxy (MBE) chamber. A detailed analysis of the pseudo-dielectric function shows that Hg is present at the surface both in chemisorbed and physisorbed form. Effective medium models for a mixture of chemisorbed and physisorbed Hg on the microscopically rough CdTe surface could not fit our data. However, a proposed model in which a partial layer of physisorbed Hg sits on top of a partial layer of chemisorbed Hg fits the measured pseudo-dielectric function well and yields precise values for the thicknesses of the chemisorbed and the physisorbed Hg layers. These values change in the expected manner as a function of Hg flux, temperature, and Te coverage. An analysis of the uncertainty in the measured thicknesses is carried out in detail, and a study of the limitations of the ellipsometer used for this study is presented. The effects of these limitations on the precision and accuracy of in-situ data are enumerated.     

Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry

The use of spectroscopic ellipsometry for monitoring the vapor phase epitaxial growth of mercury cadmium telluride (Hg_1−xCd_xTe) in real-time is demonstrated. The ellipsometer is used to perform system identification of the chemical vapor deposition reactor used for the growth of CdTe and to measure the response of the reactor to different growth conditions. The dynamic behavior of the reactor is also studied by evaluating the gas transport delay. The optical constants of Hg_1−xCd_xTe are determined at the growth temperature for different compositions.In-situ real-time composition control is performed during the growth of Hg_1−xCd_xTe. The required target compositions are attained by the ellipsometer and appropriate corrections are also made by the controller when a noise input in the form of a temperature variation is introduced.     

Real-Time monitoring of III-V molecular beam epitaxial growth using spectroscopic ellipsometry

We report the real-time monitoring of monolayer thickness changes in AlAs and GaAs layer growth on rotating GaAs substrates using spectroscopic ellipsometry (SE). A phase-modulated spectroscopic ellipsometer was integrated with a III-V MBE system by triggering spectral acquisition synchronously with substrate rotation. Absolute thickness accuracy was verified using ex situ SE measurement. Reasonable agreement was also obtained between in situ growth rate measurements by SE and reflection high energy electron diffraction. The precision and speed of this method appears suitable for real-time control of quantum devices, such as resonant-tunneling diodes.     

Low-k dielectrics: a non-destructive characterization by infrared spectroscopic ellipsometry

An infrared spectroscopic ellipsometer devoted to the characterization of silicon microelectronics has recently been developed at SOPRA. Its main feature is the ability to measure on a small spot (80×200 μm) with a high signal/noise ratio. An original patented optical design suppresses back face reflection and ensures good-quality spectral measurements in the 600–7000 cm⁻¹ range. The excellent signal/noise ratio allows the performance of measurements in less than 30 s. Automation and real-time analysis are included to offer an operator-orientated metrology tool. Details of the instrument are presented, and its use for the characterization of different kinds of low-k dielectrics.     

氢化非晶硅薄膜的性能研究

本文研究了PECVD系统沉积薄膜及其特性．通过椭偏仪测出了薄膜的膜厚, 采用电子薄膜应力分布测试仪分析了薄膜应力,并运用四探针装置研究了电阻率、方阻、TCR及它们之间的相互关系。结果表明,所沉积的薄膜覆形特性好、沉积速度快, 沉积速率达到了31．89nm／min,另外,它还具有低应力、高TCR的特点;当薄膜电阻率处在一定的范围内时,通过数据分析,电阻率与TCR之间几乎成线性关系．