共查询到19条相似文献,搜索用时 78 毫秒
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简要介绍了椭圆偏振测量术的基本原理,并对自动椭偏仪进行了介绍。由于自动椭偏仪具有无损探测、测量准确度高和测量迅速等特点,它非常适合用于LCD薄膜系统光学性质的在线测量。 相似文献
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提出了一套对椭偏仪的测量误差进行有效修正的方案,设计了一个Windows版的椭偏仪测厚数据处理软件,并在该软件中嵌入了对测量数据的误差进行修正的方法,使椭偏仪的最终测量结果更加精确。制作了30片厚度梯度分布的标准样片(厚度20nm~1μm),用于从“软”、“硬”件两个方面对椭偏仪进行误差修正,使最终的误差小于1%。本文所提出的修正方案具有一定的普适性、实用性。 相似文献
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椭偏技术的原理及其在功能薄膜表征中的应用 总被引:3,自引:0,他引:3
随着计算机技术的不断发展,已有一百多年历史的椭偏技术的研究重点已从该技术本身转移到了它在材料分析中的新用途。通过介绍椭偏技术的测量原理,给出了椭偏仪在材料表征中的应用范围和局限。研究表明,结合其他分析工具并建立精细的椭偏模型,可变入射角光谱椭偏仪(VASE)能定量测量各种功能金属氧化物薄膜的厚度、光学常数和气孔率。VASE将在功能金属氧化物外延薄膜的生长控制和性能优化等方面发挥积极的作用。 相似文献
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在半导体工艺中,掺杂杂质类型、浓度及结深的改变都会引起不同频率的红外光谱,介绍了一种通过红外椭偏仪测量浅结杂质分布的方法。利用Drude方程将Si中不同掺杂与其引起的光学常量的变化对应起来,通过红外椭偏分量Ψ和Δ的测量及模型拟合来测定半导体中载流子的浓度分布。并建立高斯渐变层模型,即将离子注入退火后的非均匀掺杂层分成n小层,各层载流子浓度之间符合高斯分布,且每一层载流子浓度可以用Drude方程来描述。测量采用了可变角度的红外光谱椭偏仪,该测量方法具有非接触性、非破坏性的优点,测量快捷方便。 相似文献
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SiO2和ZrO2薄膜光学性能的椭偏光谱测量 总被引:3,自引:1,他引:3
用溶胶-凝胶工艺在碱性催化条件下,采用旋转镀膜法在K9玻璃上分别制备了性能稳定的单层SiO2薄膜与单层ZrO2薄膜。用反射式椭圆偏振光谱仪测试了薄膜的椭偏参数,并用Cauchy模型对椭偏参数进行数据拟合,获得了溶胶-凝胶SiO2与ZrO2薄膜在300~800 nm波段的色散关系。用紫外-可见分光光度计测量了薄膜的透射率,并与用椭偏仪换算出来的结果相比较;用原子力显微镜观察了薄膜的表面微结构,并讨论表面微结构与薄膜光学常数之间的关系。分析结果表明,Cauchy模型能较好的描述溶胶-凝胶薄膜的光学性能,较详细的得到了薄膜的折射率,消光系数等光学常数随波长λ的变化规律;薄膜光学常数的大小与薄膜的微结构有关。 相似文献
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《红外技术》2017,(8)
利用直流非平衡磁控溅射技术,在100℃条件下,在单晶硅上制备了具有红外增透效果的类金刚石薄膜,研究了偏压对薄膜结构、机械性能和红外光学性能的影响,解释了薄膜结构与性能之间的关系。利用场发射扫描电镜(FESEM)、Dektak150型台阶仪、Raman光谱仪、纳米压痕仪、椭偏仪和傅里叶红外吸收光谱仪表征薄膜形貌、结构、硬度、折射率和红外光学性能。实验结果表明:在偏压为-100 V时,薄膜中sp3相含量最高,得到最大的纳米硬度14.8 GPa和最大折射率2.36,此时透光率为67.3%;在偏压为-200 V时,薄膜硬度为11.2 GPa,薄膜的折射率为2.06,最接近零反射膜所需折射率,此时透过率最大。 相似文献
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Spectroscopic ellipsometry has gained increasing attention in semiconductor process control because the technique is nondestructive and noncontacting. This paper demonstrates the capability of spectroscopic ellipsometer to measure the thickness of conducting thin films of titanium silicide. Unlike cross section TEM measurement, this technique does not involve elaborate process of sample preparation. This technique does not require calibration and is used to determine thickness of silicide films from few tens of angstrom up to tens of nanometer. The thickness of titanium silicide film measured at a single point, using spectroscopic ellipsometer and TEM analysis differs by only 4% 相似文献
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J. D. Benson A. B. Cornfeld M. Martinka K. M. Singley Z. Derzko P. J. Shorten J. H. Dinan P. R. Boyd F. C. Wolfgram B. Johs P. He John A. Woollam 《Journal of Electronic Materials》1996,25(8):1406-1410
An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth.
Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model
which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the
growth process. 相似文献
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Xinhui Niu Jakatdar N. Junwei Bao Spanos C.J. 《Semiconductor Manufacturing, IEEE Transactions on》2001,14(2):97-111
Scatterometry is one of the few metrology candidates that has true in situ/in-line potential for deep submicrometer critical dimension (CD) and profile analysis. Most existing scatterometers are designed to measure multiple incident angles at a single wavelength on periodic gratings. We extend this idea by deploying specular spectroscopic scatterometry. Specular spectroscopic scatterometry (SS) is designed to measure the zeroth-order diffraction response at a fixed angle of incidence and multiple wavelengths. This mechanism allows the use of existing thin-film metrology equipment, such as spectroscopic ellipsometers, to accurately extract topographic profile information from one-dimensional (1-D) periodic structures. In this work, we developed the grating tool-kit (gtk), which implements several variants of rigorous coupled-wave analysis (RCWA) to accurately and efficiently simulate diffraction behavior of 1-D gratings. Theoretical simulations using this package show that specular spectroscopic scatterometry can be applied in the current semiconductor manufacturing technology, and can be easily extended to the 0.07-μm generation. We have also applied a library-based profile extraction methodology to resist and poly focus-exposure matrices patterned using 0.25and 0.18-μm lithography and etch technology, respectively, to extract their cross-sectional profiles. Discrepancies between CD-SEM, CD-AFM, and SSS measurements are discussed and explained 相似文献
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MBE-grown gallium arsenide epitaxial layers on silicon, with thicknesses between 0.1 and 8.1 μm, have been studied using a simple rotating polariser multiple-angle-of-incidence ellipsometer. From these data, information on the roughness of the surfaces of the layers and the anisotropy of the refractive index of the layers has been obtained. The results are compared with data obtained on the same samples using scanning electron microscopy and conventional spectroscopic ellipsometry. 相似文献
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We study the adsorption of Hg on CdTe(211)B using an 88-wavelength spectroscopic ellipsometer mounted on a commercial, molecular
beam epitaxy (MBE) chamber. A detailed analysis of the pseudo-dielectric function shows that Hg is present at the surface
both in chemisorbed and physisorbed form. Effective medium models for a mixture of chemisorbed and physisorbed Hg on the microscopically
rough CdTe surface could not fit our data. However, a proposed model in which a partial layer of physisorbed Hg sits on top
of a partial layer of chemisorbed Hg fits the measured pseudo-dielectric function well and yields precise values for the thicknesses
of the chemisorbed and the physisorbed Hg layers. These values change in the expected manner as a function of Hg flux, temperature,
and Te coverage. An analysis of the uncertainty in the measured thicknesses is carried out in detail, and a study of the limitations
of the ellipsometer used for this study is presented. The effects of these limitations on the precision and accuracy of in-situ
data are enumerated. 相似文献
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We report the real-time monitoring of monolayer thickness changes in AlAs and GaAs layer growth on rotating GaAs substrates
using spectroscopic ellipsometry (SE). A phase-modulated spectroscopic ellipsometer was integrated with a III-V MBE system
by triggering spectral acquisition synchronously with substrate rotation. Absolute thickness accuracy was verified using ex
situ SE measurement. Reasonable agreement was also obtained between in situ growth rate measurements by SE and reflection
high energy electron diffraction. The precision and speed of this method appears suitable for real-time control of quantum
devices, such as resonant-tunneling diodes. 相似文献
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Srikanteswara Dakshina Murthy Ishwara Bhat Blaine Johs Shakil Pittal Ping He 《Journal of Electronic Materials》1995,24(9):1087-1091
The use of spectroscopic ellipsometry for monitoring the vapor phase epitaxial growth of mercury cadmium telluride (Hg1−xCdxTe) in real-time is demonstrated. The ellipsometer is used to perform system identification of the chemical vapor deposition
reactor used for the growth of CdTe and to measure the response of the reactor to different growth conditions. The dynamic
behavior of the reactor is also studied by evaluating the gas transport delay. The optical constants of Hg1−xCdxTe are determined at the growth temperature for different compositions.In-situ real-time composition control is performed during the growth of Hg1−xCdxTe. The required target compositions are attained by the ellipsometer and appropriate corrections are also made by the controller
when a noise input in the form of a temperature variation is introduced. 相似文献
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An infrared spectroscopic ellipsometer devoted to the characterization of silicon microelectronics has recently been developed at SOPRA. Its main feature is the ability to measure on a small spot (80×200 μm) with a high signal/noise ratio. An original patented optical design suppresses back face reflection and ensures good-quality spectral measurements in the 600–7000 cm−1 range. The excellent signal/noise ratio allows the performance of measurements in less than 30 s. Automation and real-time analysis are included to offer an operator-orientated metrology tool. Details of the instrument are presented, and its use for the characterization of different kinds of low-k dielectrics. 相似文献
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本文研究了PECVD系统沉积薄膜及其特性.通过椭偏仪测出了薄膜的膜厚, 采用电子薄膜应力分布测试仪分析了薄膜应力,并运用四探针装置研究了电阻率、方阻、TCR及它们之间的相互关系。结果表明,所沉积的薄膜覆形特性好、沉积速度快, 沉积速率达到了31.89nm/min,另外,它还具有低应力、高TCR的特点;当薄膜电阻率处在一定的范围内时,通过数据分析,电阻率与TCR之间几乎成线性关系. 相似文献