一种高精度高稳定性锯齿波振荡器的设计

设计了一种应用于DC/DC开关电源管理芯片的锯齿波振荡器,该电路利用内部基准电流源产生的电流对电容进行充放电,使得产生的锯齿波信号随电源电压和温度的变化较小,采用迟滞技术提高了锯齿波信号幅值.采用基于CSMC的0.5μmCMOS 工艺进行仿真.结果表明,该电路产生的振荡频率为5MHz,信号幅值为0-3V,电源电压在2....     

一种CMOS锯齿波振荡电路的设计

以比较器为核心电路,并采用恒流源充放电技术,设计了一种基于1．2μmCMOS工艺的锯齿波振荡电路,并对其各单元组成电路的设计进行了阐述。同时利用Cadence SpectreS仿真工具对电路进行了仿真模拟,结果表明,锯齿波信号的线性度较好,同时在电源电压5．0V左右,信号振荡频率变化很小;在27℃到55℃的温度范围内,信号振荡频率变化也很小。可见在适当的电源电压和温度变化范围内,振荡电路的性能较好,可广泛应用在PWM等各种电子电路中。     

基于OrCAD／PSpice的信号产生电路设计

设计了正弦波、矩形波和锯齿波发生电路,并在OrCAD/PSpice环境中完成仿真分析。给出文氏桥正弦波振荡电路、555时基电路组成的矩形波振荡电路和运算放大器组成的锯齿波发生电路三种信号产生电路的振荡波形,测量振荡周期和振荡频率,并与理论值做出比较。结果表明,设计的信号产生电路波形好,振荡频率稳定,易于实现,可广泛应用于工程设计领域。     

一种基于迟滞比较器的锯齿波产生电路

介绍一种基于TSMC 0.18μm工艺设计的锯齿波产生电路。传统锯齿波产生电路通常以比较器为核心结构,采用恒流源充放电技术实现。为了获得更快的响应速度,设计了一款利用内部正反馈原理实现的迟滞比较器来取代传统比较器,同时改进架构,得到一种对电源电压变化不敏感,具有较高频率的锯齿波产生电路。最终通过HSpice对电路进行了仿真验证,在常温下锯齿波的频率大约为7.5 MHz;同时当电源电压在2.5~4.5 V内变化时,锯齿波的频率变化不超过0.12 MHz。     

基于Multisim的非正弦波信号发生器设计与仿真

在电子电路中,矩形波、三角波、锯齿波统称为非正弦波,所设计的非正弦波信号发生器以矩形波发生电路为基础,在其输出端加积分运算电路及相应的辅助电路产生三角波或锯齿波信号,辅以外围电路设计,实现信号频率、幅值、占空比调节。在Multisim 10开发环境中搭建该电路并进行了验证分析,结果表明,电路达到了设计要求,实现了预期功能。     

一种DC/DC稳压器多工作模式压控振荡电路设计

设计了一种应用于DC/DC集成稳压器的多控制模式CMOS压控振荡器(VCO).在外同步模式下,可产生与外部时钟同频率同相位的400~700kHz的脉冲和锯齿波信号;在非外同步模式下,可产生频率为550kHz的脉冲和锯齿波信号,并可在输出短路时自动进行频率切换以防止电路失控.采用Sanyo Hspice模型进行仿真后表明,此VCO电路性能得以改善,振荡频率和温度等特性均满足设计指标要求.     

简易函数信号发生器

这是一种适合自制的简易函数信号发生器，电路原理如附图所示。该发生器可提供三角波、锯齿波和方波信号；三角波和锯齿波的波形变化和频率无关；方波信号的占空比与频率无关。主要应用于测试仪器和脉冲宽度控制。     

一种温度不敏感占空比可调的振荡器

介绍了一种单比较器型锯齿波及CLK方波震荡器电路,它通过基准电压源对RT/CT充放电产生一定占空比的锯齿波及CLK方波信号。该电路所产生的方波及锯齿波频率的温度和电压稳定性好,波形的占空比可根据需求进行trimming调节。同时介绍了电路的工作原理,进行了HSPICE仿真,最后给出了流片验证结果。     

一种频率可调振荡器的设计

文中简单介绍了一种由双比较器型施密特触发器构成的振荡电路,它通过调整外部的电阻来控制对电容的充电电流,从而得到所需频率的方波或锯齿波信号。在对电路工作原理进行分析的基础上,利用Hspice仿真软件对振荡器频率的温度特性、电源变化等进行了仿真。结果表明该振荡电路产生的信号频率不仅可以调节,而且对温度和电源的变化不敏感。     

一种高性能Class D音频放大器PWM控制的设计

文中设计了一种应用于Class D音频放大器中高性能PWM控制。该控制能够在较宽的电源电压范围内,使调制锯齿波的输入电平及音频输入信号经过前置放大后的共模电平跟随电源电压的变化而变化。共模电平经过PWM比较器得到占空比随输入信号变化的控制信号,从而提高系统的输出功率。仿真结果显示,当电源电压在2．4-5V范围变化时．音频信号和调制锯齿波的共模电平偏差在2mV以内,同时锯齿波的幅度也随着电源电压的升高而升高．显示了良好的线性跟随性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks