Surface micromachined RF MEMS variable capacitor

We used simple microelectromechanical systems (MEMS) technology to fabricate low-voltage-controlled variable capacitors with high-quality factor. The surface profile of the variable capacitor at different values of applied voltage is measured using WYKO NT1100 optical surface profiler. The pull-in voltage of the variable capacitor was below 15 V. The capacitance and quality factor at 1 GHz are 0.792 and 51.6 pF. The pull-in voltage is 13.5 V, the tuning ratio of the capacitor is more than 1.31:1.     

A new MEMS based variable capacitor with wide tunability,high linearity and low actuation voltage

We have proposed a new RF MEMS variable capacitor to achieve high linearity, wide tunability and low actuation voltage. The idea is based on increasing the linear region in the gap between the plates of the capacitor. It is done by adding a fixed-fixed beam below the fixed-free beam. The fixed-free beam is one plate of the capacitor. The voltage is applied to the fixed-free beam. In the vicinity of the pull-in voltage, the fixed-free beam losses its equivalent stiffness. The fixed-fixed beam is located in the vicinity of pull in situation of the fixed-free beam. This condition increases the equivalent stiffness of the fixed-free beam and allows the beam to continue moving down linearly and consequently increases the maximum capacitance of the structure. Geometrical and material property effects of the second beam on the linearity, tunability and voltage are investigated. The governing nonlinear equation for static deflection of the beam based on the Euler–Bernoulli beam theory has been presented.     

A novel linearly tunable butterfly-shape MEMS capacitor

A new MEMS tunable capacitor with linear capacitance–voltage (C–V) response is introduced. The design is developed based on a parallel-plate configuration and uses the structural lumped flexibility and geometry optimization to obtain a linear response. The moving electrode is divided into two segments connected to one another by a torsional spring. There are extra beams located between the two plates, which constrain the displacement of the moving plate. The resulting nonlinear structural rigidity provides the design with higher tunability than the parallel-plate ones. Furthermore, because the plate's displacement is controlled, the shape of C–V curve changes in such a way that high linearity is achieved. The proposed design can be fabricated by a three-structural-layer process such as PolyMUMPs. The results of analytical solution and experimental measurements verify that the new capacitor can produce tunability of over 100% with high linearity. The introduced design methodology can further be extended to flexible plates and beams to obtain smooth C–V curves.     

Voltage variable capacitor tuning: A review

This paper discusses the history, device theory, characteristics, applications, and future trends of voltage varible capacitor tuning. All equations are stated in terms of two general exponents of power law functions, namely the impurity distribution proportional to x^mand the differential capacitance proportional to (V + V0)^-n. The role of these exponents is shown in the device theory, the temperature drift, linearity in a VCO, and the cross modulation in an FM modulator. Important results from many papers and reports are cited to reinforce the ideas presented. Throughout the review, the desirability of the exponent n = 2 is reiterated.     

Development of a triangular-plate MEMS tunable capacitor with linear capacitance-voltage response

This paper introduces a modified structure for parallel-plate-based MEMS tunable capacitors. The capacitor has triangular electrodes with geometric and structural asymmetry, which enhances its performance. The device structure is also equipped with a set of cantilever beams between capacitor’s electrodes, called middle beams. These beams provide extra stiffness as tuning voltage increases and delay the pull-in which results in a higher tunability. They also reduce the high sensitivity of the capacitance to the voltage change and linearize the C-V response. An analytical model is developed to optimize the capacitor’s dimensions for maximum linearity of the response. Numerical simulations demonstrate tunabilities over 150% where more than 2/3 of which is highly linear. Capacitors fabricated with PolyMUMPs verify that the design technique proposed in this paper can improve the linearity of the device and increase the maximum tunability. The proposed design has a simple geometry and is fabricated using three structural layers, and therefore, it can be easily integrated in tunable filters or other RF circuits.     

Self-assembling MEMS variable and fixed RF inductors

Inductors play a key role in wireless front-end circuitry, yet are not generally well suited for conventional RF integrated-circuit (RFIC) fabrication processes. We have developed inductors that can be fabricated on a conventional RFIC silicon substrate, which use warping members to assemble themselves away from the substrate to improve quality factor (Q) and self-resonance frequency (SRF), and to provide a degree of variation in inductance value. These self-assembling variable inductors are realized through foundry provided microelectromechanical systems (MEMS) processing and have demonstrated temperature stable Q values greater than 13, SRF values well above 15 GHz, and inductance variations greater than 18%. Simulations suggest the potential for Q values above 20 and inductance variations greater than 30%, with optimized processing     

A fiber connectorized MEMS variable optical attenuator

A voltage-controlled moving-mirror microelectro-mechanical systems variable optical attenuator is described that has less than 1-dB fiber-to-fiber insertion loss at 1550-nm wavelength and greater than 50-dB dynamic range. The device was configured with a simple feedback circuit to operate as an optical power regulator capable of stabilizing the output power to within 0.26 dB for a 12-dB input power excursion     

双膜桥微波MEMS开关

介绍了一种双膜桥微波MEMS开关 ,给出了开关的设计与优化方法 ,建立了开关的仿真模型 ,使用硅表面微机械工艺制造了双膜桥开关样品 ,其主要结构为硅衬底上制作CPW金属传输线电极和介质层 ,然后制作具有微电感结构的金属膜桥 ,提高了开关隔离度。利用HFSS软件仿真的结果表明 ,该开关在微波低频段 (3～ 6GHz)有着很好的隔离性能。研制的开关样品在片测试的电性能指标为 :插损小于 0 .3dB ,隔离度大于 4 0dB ,驱动电压小于 2 4V。     

双膜桥微波MEMS开关

介绍了一种双膜桥微波MEMS开关，给出了开关的设计与优化方法，建立了开关的仿真模型，使用硅表面微机械工艺制造了双膜桥开关样品，其主要结构为硅衬底上制作CPW金属传输线电极和介质层，然后制作具有微电感结构的金属膜桥，提高了开关隔离度。利用HFSS软件仿真的结果表明，该开关在微波低频段(3～6GHz)有着很好的隔离性能。研制的开关样品在片测试的电性能指标为：插损小于0．3dB，隔离度大于40dB，驱动电压小于24V。     

基于BST可变电容的电调微带天线研究

采用BaxSr1–xTiO3(BST)可变电容作为调谐元件研制了一种工作频率可调的电调谐微带天线。该天线通过利用单片机控制电源单元输出不同的偏置电压来改变BST可变电容的电容大小,进而实现工作频点的调整。结果表明,当电源输出偏压在0-52 V变化时,该微带天线的工作频点可在1.47-1.61 GHz调节,回波损耗低于–15 dB。     

Study of intermodulation in RF MEMS variable capacitors

This paper provides a rigorous study of the causes and physical origins of intermodulation distortion (IMD) in RF microelectromechanical systems (MEMS) capacitors, its analytical dependence on the MEMS device design parameters, and its effects in RF systems. It is shown that not only third-order products exist, but also fifth order and higher. The high-order terms are mainly originated by the nonlinear membrane displacement versus applied voltage and, in the case considered in this study, with an additional contribution from the nonlinear dependence of the reflection coefficient phase on the displacement. It is also shown that the displacement nonlinear behavior also contributes to the total mean position of the membrane. In order to study these effects in depth, an analytical frequency-dependent IMD model for RF MEMS based on a mobile membrane is proposed and particularized to the case of a MEMS varactor-a device for which IMD can be significant. The model is validated, up to the fifth order, theoretically (using harmonic balance) and empirically (the IMD of a MEMS varactor is measured). To this end, a two-tone IMD reflection measurement system for MEMS is proposed.     

A design theory for the high-frequency p-n junction variable capacitor

One of the more significant uses of the p-n junction variable capacitor is as an HF (> 100 mc) tuning element. Structures which have been available have had rather low Q at these frequencies. In order to determine the limits imposed on Q by the physics of the device, a fundamental study has been made of the problems of the HF junction capacitor. Equations have been developed for the prediction of Q in alloyed and diffused structures. Optimization criteria are proposed which permit design of capacitors in which Q is no longer a significant limitation. In support of the theory, experimental results are presented on units designed and fabricated in accordance with the optimization criteria. Q's in excess of 500 have been observed at 100 mc.     

RF VCO tuning using MEMS piezoelectric actuated variable inductors

This paper presents a study on the use of microsystems technology in the design of radio frequency voltage-controlled oscillators. In particular, the application of a micro-electro-mechanical systems (MEMS) based variable inductor for frequency tuning purposes is presented. Although traditionally a MEMS variable inductor is considered as a means to extend the tuning range, in this work it is shown that with correct inductor design it is also possible to facilitate and improve the voltage-controlled oscillator design in terms of phase noise response and power consumption in comparison to a design based on standard capacitive tuning.     

Design,fabrication and characterization of miniature RF MEMS switched capacitor based phase shifter

This paper aims to present in detail the design, fabrication and the various characterization techniques adopted in realizing a novel miniature-size switched capacitor based phase shifter. The work strives to provide an all-round development of a DMTL (Distributed MEMS Transmission Line) based phase shifting unit yielding an overall phase shift of 15° at a frequency of 15 GHz. The RF MEMS (Radio Frequency Micro Electro Mechanical Systems) Switched Capacitor based phase shifter has highly miniaturized dimensions, and is capable of solving many limitations to which the conventional Switched Capacitors are mostly susceptible. This miniature RF MEMS switched capacitor actuates at a low actuation voltage of 12 V, exhibits a fundamental frequency of vibration as high as 1.468 MHz and a switching time of 1.4 µs which is an improvement over the other reported designs. Various characterization results seem to validate the simulations.     

MEMS variable optical attenuator using low driving voltage for DWDMsystems

A silicon microelectromechanical system (MEMS) variable optical attenuator with fibre connection is reported. The device requires only 8 V driving voltage. It has only 1.5 dB insertion loss, but 45 dB dynamic range, 37 ms response time, and 0.9 dB wavelength dependence loss over the C-band (1528-1561 nm)     

一种用于RF MEMS移相器及开关可变电容的复合微桥膜结构

提出了一种基于微机械工艺的新型复合微桥膜结构，由低应力SiN／SiO2(0.5μm／50nm)及Cr／Au(30nm／1μm)构成。相应的工艺流程较为简单。对影响其特性的因素进行了理论分析，并提出了3种桥膜的平面结构；利用静电／力耦合有限元法分析了各种结构的静电驱动特性以及各阶模态，结果得到了令人满意的驱动和机械性能；通过有限元高频仿真软件对桥膜结构与共面波导形成的可调电容结构进行了分析，结果表明其具有良好的射频／微波性能。该桥膜结构适用于RF MEMS开关、移相器及开关式可调电容和滤波器等。     

一种用于RF MEMS移相器及开关可变电容的复合微桥膜结构

提出了一种基于微机械工艺的新型复合微桥膜结构 ,由低应力SiN/SiO2 (0 .5 μm/5 0nm )及Cr/Au(30nm/1μm)构成。相应的工艺流程较为简单。对影响其特性的因素进行了理论分析 ,并提出了 3种桥膜的平面结构 ;利用静电 /力耦合有限元法分析了各种结构的静电驱动特性以及各阶模态 ,结果得到了令人满意的驱动和机械性能 ;通过有限元高频仿真软件对桥膜结构与共面波导形成的可调电容结构进行了分析 ,结果表明其具有良好的射频 /微波性能。该桥膜结构适用于RFMEMS开关、移相器及开关式可调电容和滤波器等     

基于MEMS的VOA的技术分析及应用

基于MEMS技术,对斜45°放置反射镜型、折叠反射式镜型和椭圆凹面反射镜型反射式MEMS VOA的结构及工作原理进行了详细分析,并对MEMS VOA在EDFA增益平坦放大器、EDFA光增益钳制、VMUX模块结构及ROADM系统中的几种具体应用进行了详细介绍.     

MEMS optical wavelength deinterleaver with continuously variable channel spacing and center wavelength

We report on a tunable optical wavelength deinterleaver based on a microelectromechanical system micromirror array in a modified Gires-Tournois interferometer. Continuous wavelength tuning and switching of the deinterleaver outputs are achieved by vertical micromirror motion of less than 1 /spl mu/m. Control of the channel spacing, or free spectral range of the device, is also experimentally demonstrated.