Cross-Interaction Study of Cu/Sn/Pd and Ni/Sn/Pd Sandwich Solder Joint Structures

Cross-interactions between Cu/Sn/Pd and Ni/Sn/Pd sandwich structures were investigated in this work. For the Cu/Sn/Pd case, the growth behavior and morphology of the interfacial (Pd,Cu)Sn₄ compound layer was very similar to that of the single Pd/Sn interfacial reaction. This indicates that the growth of the (Pd,Cu)Sn₄ layer at the Sn/Pd interface would not be affected by the opposite Cu/Sn interfacial reaction. We can conclude that there is no cross-interaction effect between the two interfacial reactions in the Cu/Sn/Pd sandwich structure. For the Ni/Sn/Pd case, we observed that: (1) after 300 s of reflow time, the (Pd,Ni)Sn₄ compound heterogeneously nucleated on the Ni₃Sn₄ compound layer at the Sn/Ni interface; (2) the growth of the interfacial PdSn₄ compound layer was greatly suppressed by the formation of the (Pd,Ni)Sn₄ compound at the Sn/Ni interface. We believe that this suppression of PdSn₄ growth is caused by heterogeneous nucleation of the (Pd,Ni)Sn₄ compound in the Ni₃Sn₄ compound layer, which decreases the free energy of the entire sandwich reaction system. The difference in the chemical potential of Pd in the PdSn₄ phase at the Pd/Sn interface and in the (Pd,Ni)Sn₄ phase at the Sn/Ni interface is the driving force for the Pd atomic flux across the molten Sn. The diffusion of Ni into the ternary (Pd,Ni)Sn₄ compound layer controls the Pd atomic flux across the molten Sn and the growth of the ternary (Pd,Ni)Sn₄ compound at the Sn/Ni interface.     

Intermetallic reactions in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes

The intermetallic compounds (IMCs) formed during the reflow and aging of Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes were investigated. After reflow, the thickness of (Cu, Ni, Au)₆Sn₅ interfacial IMCs in Sn3Ag0.5Cu0.06Ni0.01Ge was similar to that in the Sn3Ag0.5Cu specimen. The interiors of the solder balls in both packages contained Ag₃Sn precipitates and brick-shaped AuSn₄ IMCs. After aging at 150°C, the growth thickness of the interfacial (Ni, Cu, Au)₃Sn₄ intermetallic layers and the consumption of the Ni surface-finished layer on Cu the pads in Sn3Ag0.5Cu0.06Ni0.01Ge solder joints were both slightly less than those in Sn3Ag0.5Cu. In addition, a coarsening phenomenon for AuSn₄ IMCs could be observed in the solder matrix of Sn3Ag0.5Cu, yet this phenomenon did not occur in the case of Sn3Ag0.5Cu0.06Ni0.01Ge. Ball shear tests revealed that the reflowed Sn3Ag0.5Cu0.06Ni0.01Ge packages possessed bonding strengths similar to those of the Sn3Ag0.5Cu. However, aging treatment caused the ball shear strength in the Sn3Ag0.5Cu packages to degrade more than that in the Sn3Ag0.5Cu0.06Ni0.01Ge packages.     

Phase Evolution in the AuCu/Sn System by Solid-State Reactive Diffusion

The interfacial reactions between several Au(Cu) alloys and pure Sn were studied experimentally at 200°C. Amounts of Cu in the AuSn₄ and AuSn₂ phases were as low as 1 at.%. On the basis of these experimental results there is no continuous solid solution between (Au,Cu)Sn and (Cu,Au)₆Sn₅. The copper content of (Au,Cu)Sn was determined to be approximately 7–8 at.%. Substantial amounts of Au were present in the (Cu,Au)₆Sn₅ and (Cu,Au)₃Sn phases. Two ternary compounds were formed, one with stoichiometry varying from (Au_40.5Cu₃₉)Sn_20.5 to (Au_20.2Cu_59.3)Sn_20.5 (ternary “B”), the other with the composition Au₃₄Cu₃₃Sn₃₃ (ternary “C”). The measured phase boundary compositions of the product phases are plotted on the available Au–Cu–Sn isotherm and the phase equilibria are discussed. The complexity and average thickness of the diffusion zone decreases with increasing Cu content except for the Au(40 at.%Cu) couple.     

Investigation of the Phase Equilibria of Sn-Cu-Au Ternary and Ag-Sn-Cu-Au Quaternary Systems and Interfacial Reactions in Sn-Cu/Au Couples

The phase equilibria of the Sn-Cu-Au ternary, Ag-Sn-Cu-Au quaternary systems and interfacial reactions between Sn-Cu alloys and Au were experimentally investigated at specific temperatures in this study. The experimental results indicated that there existed three ternary intermetallic compounds (IMCs) and a complete solid solubility between AuSn and Cu₆Sn₅ phases in the Sn-Cu-Au ternary system at 200°C. No quaternary IMC was found in the isoplethal section of the Ag-Sn-Cu-Au quaternary system. Three IMCs, AuSn, AuSn₂, and AuSn₄, were found in all couples. The same three IMCs and (Au,Cu)Sn/(Cu,Au)₆Sn₅ phases were found in all Sn-Cu/Au couples. The thickness of these reaction layers increased with increasing temperature and time. The mechanism of IMC growth can be described by using the parabolic law. In addition, when the reaction time was extended and the Cu content of the alloy was increased, the AuSn₄ phase disappeared gradually. The (Au, Cu)Sn and (Cu_,Au)₆Sn₅ layers played roles as diffusion barriers against Sn in Sn-Cu/Au reaction couple systems.     

Kinetic analysis of the interfacial reactions in Ni/Sn/Cu sandwich structures

The mutual interaction between Sn/Ni and Sn/Cu interfacial reactions in a Ni/Sn/Cu sandwich sample has been studied. The major interfacial reaction product on the Cu side was Cu₆Sn₅, while on the Ni side, a ternary (Cu,Ni)₆Sn₅ compound layer was formed. We found that the growth kinetics of the interfacial compound layers on both sides reached a steady state in the late reflow stage. The interfacial compound layer on the Cu side retained a constant thickness. On the other hand, the interfacial compound layer on the Ni side grew at a relatively fast rate, which was found to be linear with time. Our results indicate that the growth of the ternary (Cu,Ni)₆Sn₅ compound layer was controlled by the Cu dissolution flux at the solder/Cu₆Sn₅ compound interface. The dissolution constant of the Cu₆Sn₅ compound into the molten Sn was determined to be 0.13 μm/s. Institute of Materials Science and Engineering, National Central University.     

Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects

The effect of electromigration (EM) on the interfacial reaction in a line-type Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu interconnect was investigated at 150°C under 5.0 × 10³ A/cm². When Cu atoms were under downwind diffusion, EM enhanced the cross-solder diffusion of Cu atoms to the opposite Ni-P/Sn (anode) interface compared with the aging case, resulting in the transformation of interfacial intermetallic compound (IMC) from Ni₃Sn₄ into (Cu,Ni)₆Sn₅. However, at the Sn/Cu (cathode) interface, the interfacial IMCs remained as Cu₆Sn₅ (containing less than 0.2 wt.% Ni) and Cu₃Sn. When Ni atoms were under downwind diffusion, only a very small quantity of Ni atoms diffused to the opposite Cu/Sn (anode) interface and the interfacial IMCs remained as Cu₆Sn₅ (containing less than 0.6 wt.% Ni) and Cu₃Sn. EM significantly accelerated the dissolution of Ni atoms from the Ni-P and the interfacial Ni₃Sn₄ compared with the aging case, resulting in fast growth of Ni₃P and Ni₂SnP, disappearance of interfacial Ni₃Sn₄, and congregation of large (Ni,Cu)₃Sn₄ particles in the Sn solder matrix. The growth kinetics of Ni₃P and Ni₂SnP were significantly accelerated after the interfacial Ni₃Sn₄ IMC completely dissolved into the solder, but still followed the t ^1/2 law.     

Solid-state interfacial reactions at the solder joints employing Au/Pd/Ni and Au/Ni as the surface finish metallizations

A tri-layer of nickel/palladium/gold (Au/Pd/Ni) is a promising candidate to replace the conventional Au/Ni bi-layer as the surface finish metallization for lead-free packaging. A surface finish metallization (Au/Pd/Ni or Au/Ni) and a Sn layer are sequentially deposited on a Cu substrate and then are subjected to thermal aging at 150 and 200 °C to investigate the interfacial reactions in the stacking multilayer structure made by low-temperature solid-state bonding. Because of the absence of the reflow process, the Pd and Au layers do not dissolve in the Sn matrix but remain at the interface and participate in the interfacial reaction to form the (Pd,Ni,Au)Sn₄ and (Au,Ni)Sn₄ phases at the Au/Pd/Ni- and Au/Ni-based interfaces, respectively. Though the Pd layer was only 0.4 μm, its resulting (Pd,Ni,Au)Sn₄ phase is much thicker than the (Au,Ni)Sn₄ phase. These two intermetallic compounds exhibit very different microstructural evolution which significantly affects the interfacial microstructures and growth rate of other intermetallic compound formed at the same interfaces.     

Coupling Effect of the Interfacial Reaction in Co/Sn/Cu Diffusion Couples

Co/Sn/Cu sandwich couples formed by electroplating were examined to investigate the interaction between Cu and Co across the Sn layer for various Sn thicknesses from 75 μm to 580 μm. At the Sn/Cu interface, both Cu₆Sn₅ and Cu₃Sn are formed. Unlike in a binary Sn/Cu couple, Cu₆Sn₅ has a spiked structure for couples with a thinner Sn layer. At the Co/Sn interface, two phases, CoSn₃ and (Cu,Co)₆Sn₅, were simultaneously observed after reaction at 200°C. Remarkably, the CoSn₃ reaction layer was much thinner than that in the binary Sn/Co couple. Furthermore, only the (Cu,Co)₆Sn₅ phase was formed at 150°C. This finding indicates that CoSn₃ growth is significantly inhibited in Co/Sn/Cu sandwich couples due to the Cu substrate.     

Reaction kinetics of solder-balls with pads in BGA packages during reflow soldering

The Au/Ni/Cu three-layer structure is one of the most common solder-ball pad finishes for the ball-grid-array (BGA) packages. The first layer, which is to be in direct contact with the solder, is a 1-μm Au layer. Beneath the Au layer is the Ni layer, whose thickness is about 7 μm. The Cu layer is part of the internal wiring of a BGA package. In this study, eutectic PbSn solder-balls were reflowed on the Au/Ni/Cu pads at 225°C for reflow times from 7.5 s to 1003 s. It was found that the Au layer reacted very quickly with the solder to form AuSn₄ and AuSn₂. The growth rate of AuSn₄ + AuSn₂ was very high, approaching 1 μm/s. When the reflow time reached 10 s, all the Au had been consumed, and AuSn₂ had been converted to AuSn₄. Moreover, AuSn₄ grains began to separate themselves from the Ni layer at the roots of the grains, and started to fall into the solder. When the reflow time reached 30 s, all AuSn₄ grains had left the interface and a thin layer of Ni₃Sn₄ formed at the solder-Ni interface. The growth rate of this Ni₃Sn₄ layer was very low, reaching only 6 μm for 1003 s of reflow. This study showed that during reflow the Au layer reacted with Sn to form AuSn₄ first, and then broke off and fell into the molten solder. In other words, the Au layer did not dissolve into the molten solder directly during reflow.     

Characterizing metallurgical reaction of Sn3.0Ag0.5Cu composite solder by mechanical alloying with electroless Ni-P/Cu under-bump metallization after various reflow cycles

Electroless Ni-P/Cu under-bump metallization (UBM) is widely used in electronics packaging. The Sn3.0Ag0.5Cu lead-free composite solder pastes were produced by a mechanical alloying (MA) process doped with Cu₆Sn₅ nanoparticles. In this study, the detailed interfacial reaction of Sn3.0Ag0.5Cu composite solders with EN(P)/Cu UBM was investigated after reflow. A field-emission scanning electron microscope (FESEM) was employed to analyze the interfacial morphology and microstructure evolution. The intermetallic compounds (IMCs) formed at the interface between the Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after one and three reflows were mainly (Ni_1−x,Cu_x)₃Sn₄ and (Cu_1−y,Ni_y)₆Sn₅. However, only (Ni_1−x,Cu_x)₃Sn₄ IMC was observed after five reflows. The elemental distribution near the interfacial region was evaluated by an electron probe microanalyzer (EPMA) as well as field-emission electron probe microanalyzer (FE-EPMA). Based on the observation and characterization by FESEM, a EPMA, and an FE-EPMA, the reaction mechanism of interfacial phase transformation between Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after various reflow cycles was discussed and proposed.     

Electric current effects upon the Sn/Cu and Sn/Ni interfacial reactions

Electromigration-induced failures in integrated circuits have been intensively studied recently; however, electromigration effects upon interfacial reactions have not been addressed. These electromigration effects in the Sn/Cu and Sn/Ni systems were investigated in this study by analyzing their reaction couples annealed at 200°C with and without the passage of electric current. The intermetallics formed were ε-(Cu₃Sn) and η-(Cu₆Sn₅) phases in the Sn/Cu couples and Ni₃Sn₄ phase in the Sn/Ni couples. The same intermetallics were formed in the two types of couples with and without the passage of electric current. The thickness of the reaction layers was about the same in the two types of couples of the Sn/Cu system. In the Sn/Ni system, the growth of the intermetallic compound was enhanced when the flow direction of electrons and that of diffusion of Sn were the same. But the effect became inhibiting if the directions of these two were opposite. Theoretical calculation indicated that in the Sn/Ni system, the electromigration effect was significant and was 28% of the chemical potential effect for the Sn element flux when the Ni₃Sn₄ layer was 10 μm thick. For the Sn and Cu fluxes in the Sn/Cu reaction couples, similar calculations showed that the electromigration effects were only 2 and 4% of the chemical potential effects, respectively. These calculated results were in good agreement with the experimental observations that in the Sn/Cu system the electric current effects were insignificant upon the interfacial reactions.     

Intermetallic reactions in Sn-3.5Ag solder ball grid array packages with Ag/Cu and Au/Ni/Cu pads

During the reflow process of Sn-3.5Ag solder ball grid array (BGA) packages with Ag/Cu and Au/Ni/Cu pads, Ag and Au thin films dissolve rapidly into the liquid solder, and the Cu and Ni layers react with the Sn-3.5Ag solder to form Cu₆Sn₅ and Ni₃Sn₄ intermetallic compounds at the solder/pad interfaces, respectively. The Cu₆Sn₅ intermetallic compounds also appear as clusters in the solder matrix of Ag surface-finished packages accompanied by Ag₃Sn dispersions. In the solder matrix of Au/Ni surface-finished specimens, Ag₃Sn and AuSn₄ intermetallics can be observed, and their coarsening coincides progressively with the aging process. The interfacial Cu₆Sn₅ and Ni₃Sn₄ intermetallic layers grow by a diffusion-controlled mechanism after aging at 100 and 150°C. Ball shear strengths of the reflowed Sn-3.5Ag packages with both surface finishes are similar, displaying the same degradation tendencies as a result of the aging effect.     

Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn Bumps

The in situ intermetallic compound (IMC) growth in Cu pillar/Sn bumps was investigated by isothermal annealing at 120°C, 150°C, and 180°C using an in situ scanning electron microscope. Only the Cu₆Sn₅ phase formed at the interface between the Cu pillar and Sn during the reflow process. The Cu₃Sn phase formed and grew at the interfaces between the Cu pillar and Cu₆Sn₅ with increased annealing time. Total (Cu₆Sn₅ + Cu₃Sn) IMC thickness increased linearly with the square root of annealing time. The growth slopes of total IMC decreased after 240 h at 150°C and 60 h at 180°C, due to the fact that the Cu₆Sn₅ phase transforms to the Cu₃Sn phase when all of the remaining Sn phase in the Cu pillar bump is completely exhausted. The complete consumption time of the Sn phase at 180°C was shorter than that at 150°C. The apparent activation energy for total IMC growth was determined to be 0.57 eV.     

Numerical and experimental analysis of the Sn3.5Ag0.75Cu solder joint reliability under thermal cycling

The Sn3.5Ag0.75Cu (SAC) solder joint reliability under thermal cycling was investigated by experiment and finite element method (FEM) analysis. SAC solder balls were reflowed on three Au metallization thicknesses, which are 0.1, 0.9, and 4.0 μm, respectively, by laser soldering. Little Cu–Ni–Au–Sn intermetallic compound (IMC) was formed at the interface of solder joints with 0.1 μm Au metallization even after 1000 thermal cycles. The morphology of AuSn₄ IMC with a small amount of Ni and Cu changed gradually from needle- to chunky-type for the solder joints with 0.9 μm Au metallization during thermal cycling. For solder joints with 4 μm Au metallization, the interfacial morphology between AuSn₄ and solder bulk became smoother, and AuSn₄ grew at the expense of AuSn and AuSn₂. The cracks mainly occurred through solder near the interface of solder/IMC on the component side for solder joints with 0.1 μm Au metallization after thermal shock, and the failure was characterized by intergranular cracking. The cracks of solder joints with 0.9 μm Au metallization were also observed at the same location, but the crack was not so significant. Only micro-cracks were found on the AuSn₄ IMC surface for solder joints with 4.0 μm Au metallization. The responses of stress and strain were investigated with nonlinear FEM, and the results correlated well with the experimental results.     

Analysis of the redeposition of AuSn<Subscript>4</Subscript> on Ni/Au contact pads when using SnPbAg,SnAg, and SnAgCu solders

Interfacial reactions between SnPbAg, SnAg, and SnAgCu solders and Ni/Au surface finish on printed wiring board and especially the redeposition of AuSn₄ intermetallic compound have been investigated. The following major results were obtained. The first phase to form during soldering in the (SnPbAg)/Ni/Au and the (SnAg)/Ni/Au systems was Ni₃Sn₄. During the subsequent solid-state annealing, the redeposition of AuSn₄ as (Au,Ni)Sn₄ occurred in both systems. This was explained with the help of the concept of local equilibrium and the corresponding ternary phase diagrams. It was concluded that the stabilizing effect of Ni on the (Au,Ni)Sn₄ provided the driving force for the redeposition. Contrarily, when the solder alloy contained some Cu, the first intermetallic to form was (Cu,Ni,Au)₆Sn₅ and no redeposition of AuSn₄ was observed. Thus, a very small addition of Cu to the Sn-rich solder alloys changed the behavior of the interconnection system completely. This behavior was explained thermodynamically by using Cu-Ni-Sn and Au-Cu-Sn ternary phase diagrams. The growth kinetics of the interfacial reaction products in the three systems was observed to be somewhat different. The reasons for the observed differences are also discussed.     

Cross-interaction between Au and Cu in Au/Sn/Cu ternary diffusion couples

Both Au and Cu are so-called fast diffusers in Sn, and can diffuse very long distances in Sn in a relatively short time. In this study, the cross-interaction between Au and Cu across a layer of Sn was investigated through the use of the Au/Sn/Cu ternary diffusion couples. A 7-μm Au layer and a 100-μm Sn layer were electroplated over Cu foils to produce the Au/Sn/Cu diffusion couples. Aging at 200°C revealed that cross-interaction could occur in as short a time as 10 min. Evidence of this cross-interaction included the formation of (Cu_1−xAu_x)₆Sn₅ on the Au side of the diffusion couples as well as on the Cu side. The reaction products on the Au side included the Au-Sn binary compounds. Between the Au-Sn compounds and the Sn was (Cu_1−xAu_x)₆Sn₅. The reaction products on the Cu side initially was only (Cu_1−xAu_x)₆Sn₅, but a layer of Aufree Cu₃Sn eventually formed between (Cu_1−xAu_x)₆Sn₅ and Cu. A detailed atomic flux analysis showed that the Cu flux through the Sn layer was about 2–3 times higher than the Au flux at any moment. The results of this study show that the cross-interaction of Au and Cu in solders is extremely rapid, and cannot be ignored in those solder joints that have both elements present.     

Investigation of interfacial reaction between Au-Sn solder and Kovar for hermetic sealing application

The microstructural evolution and interfacial reactions of Au/Sn/Au/Au/Ni/Kovar joint were investigated during aging at 180 and 250 °C for up to 1000 h. The Au/Sn combination formed a rapid diffusion system. Even in non-annealed joint, three phases such as AuSn, AuSn₂ and AuSn₄ were formed. After initial aging at 180 °C, the AuSn, AuSn₂, AuSn₄, Au and Sn phases, which were formed after plating, were fully transformed into ζ-phase and δ-phase, and (Ni, Au)₃Sn₂ intermetallic compound (IMC) layer was observed between the ζ-phase and Kovar. As a whole, the microstructure of the joint was stable during aging at 180 °C. On the other hand, the solid-state interfacial reaction was much faster at 250 °C than at 180 °C. During aging at 250 °C, the Ni layer on the Kovar reacted primarily with the δ-phase in the solder, resulting in the formation and growth of the (Au, Ni)Sn IMC layer at the interface. After aging for 48 h, the Fe-Co-Ni-Au-Sn phase was formed underneath the (Au, Ni)Sn IMC layer. Furthermore, cracks were observed inside the interfacial layers after complete consumption of the Ni layer. The study results clearly demonstrate the need for either a thicker Ni layer or an alternative surface finish on Ni, in order to ensure the high temperature reliability of the Au/Sn/Au/Au/Ni/Kovar joint above 250 °C.     

Interfacial Reactions in Sn/Fe-xNi Couples

The interfacial reactions between Sn and several Fe-xNi alloys were investigated in this study. Two different FeSn₂ phase types formed at the Sn/Fe-40.8 at.%Ni (Sn/alloy 42) interface. When the Ni content of the Fe-Ni alloy was less than 80 at.%, only the FeSn₂ phase with layer structure could be formed at the interface. When the Ni content was increased to 80 at.% to 90 at.%, both FeSn₂ and Ni₃Sn₄ phases formed in the Sn/Fe-xNi couples. When the Ni content was larger than 95 at.%, only the Ni₃Sn₄ phase was formed at the interface. A fast reaction rate and the thickest intermetallic compound (IMC) layer could be observed in the Sn/Fe-90 at.%Ni couple. The reaction paths of each reaction couple at 270°C were as follows: L/FeSn₂/Fe-40.8 at.%Ni (alloy 42), L/FeSn₂/Ni₃Sn₄/Fe-80 at.% Ni, and L/Ni₃Sn₄/Fe-95 at.%Ni, respectively.     

Co Solubility in Sn and Interfacial Reactions in Sn-Co/Ni Couples

It has been reported that minute Co additions to Sn-based solders are very effective for reducing undercooling, probably due to low Co solubility in Sn. In this study, Co solubility in molten Sn was determined experimentally. According to results of metallographic analysis, Co solubility in molten Sn is as low as 0.04 wt.% at 250°C. Interfacial reactions in Sn-Co/Ni couples at 250°C were examined for Co contents from 0.01 wt.% to 0.4 wt.%. The Ni₃Sn₄ phase was the only interfacial reaction phase in almost the entire Sn-0.01 wt.%Co/Ni couple. For Sn-Co/Ni couples with a Co content higher than 0.01 wt.%, a thin, continuous Ni₃Sn₄ layer and a discontinuous decahedron (Ni,Co)Sn₄ phase were formed in the initial stage of reaction. The reaction products evolved with time. With longer reaction time, the Sn content in the decahedron (Ni,Co)Sn₄ phase decreased, and the (Ni,Co)Sn₄ phase transformed into the (Ni,Co)Sn₂ phase and cleaved into a sheet, which then detached from the interface, after which Ni₃Sn₄ began to grow significantly with longer reaction times.     

Study of Interfacial Reactions Between Sn(Cu) Solders and Ni-Co Alloy Layers

The interfacial reactions between electroplated Ni-yCo alloy layers and Sn(Cu) solders at 250°C are studied. For pure Co layers, CoSn₃ is the only interfacial compound phase formed at the Sn(Cu)/Co interfaces regardless of the Cu concentration. Also, the addition of Cu to Sn(Cu) solders has no obvious influence on the CoSn₃ compound growth at the Sn(Cu)/Co interfaces. For Ni-63Co layers, (Co,Ni,Cu)Sn₃ is the only interfacial compound phase formed at the Sn(Cu)/Ni-63Co interfaces. Unlike in the pure Co layer cases, the Cu additives in the Sn(Cu) solders clearly suppress the growth rate of the interfacial (Co,Ni,Cu)Sn₃ compound layer. For Ni-20Co layers, the interfacial compound formation at the Sn(Cu)/Ni-20Co interfaces depends on the Cu content in the Sn(Cu) solders and the reflow time. In the case of high Cu content in the Sn(Cu) solders (Sn-0.7Cu and Sn-1.2Cu), an additional needle-like interfacial (Ni _x ,Co _y ,Cu_1−x−y )₃Sn₄ phase forms above the continuous (Ni _x ,Cu _y ,Co_1−x−y )Sn₂ compound layer. The Ni content in the Ni-yCo layer can indeed reduce the interfacial compound formation at the Sn(Cu)/Ni-yCo interfaces. With pure Sn solders, the thickness of the compound layer monotonically decreases with the Ni content in the Ni-yCo layer. As for reactions with the Sn(Cu) solders, as the compound thickness decreases, the Ni content in the Ni-yCo layers increases.