一种高精度解析提取太阳电池参数的新方法

基于太阳电池光生电流远大于反向饱和电流、并 联电阻远大于串联电阻以及光生电流 近似等于负的短路电流3个边界条件,结合太阳电池在短路点、开路点和最大功率点处的极值 表述, 提出了一种解析求解太阳电池光生电流、反向饱和电流、理想因子、并联电阻和串联电阻5个电性参 数的方法,并研究了方法的特点。通过与文献实验数据的对比表明,本文方法不仅具有正确 性,而且 适用于各种条件下的各种类型电池;通过实验表明,本文方法具有较高的计算精 度和速度,误差在2%以下,时间小于0.2s。     

非晶硅太阳能电池载流子收集长度的自动测量

提出用光生电流偏压关系拟合非晶硅pin太阳能电池光态I-V特性曲线,测量光生载流子收集长度的模型.用计算机自动测量与分析处理系统采样,采用Marquardt数字计算拟合法对实测I-V值进行拟合验证,实验结果证明该模型拟合结果良好.用不同模型对同组数据进行拟合比较,对各模型拟合误差进行了讨论,本文的模型拟合误差较小,参数自动拟合调整较大,数据重复性、可靠性好,能反映实际使用条件下电池的特性.     

高方块电阻发射区单晶硅太阳电池的性能优化

通过提高发射区的方块电阻和优化发射区的磷杂质浓度纵向分布,制备了性能优良的单晶硅太阳电池。I-V测量分析表明:高表面活性磷杂质浓度浅结发射区太阳电池短路电流密度、开路电压和填充因子分别提高了0.32mA/cm2,1.19mV和0.22%,因此转换效率提高了0.22%。内量子效率分析表明:高表面活性磷杂质浓度浅结发射区太阳电池短路电流密度的提高是由于短波光谱响应增强了。SEM分析表明:高表面活性磷杂质浓度浅结发射区太阳电池在发射区硅表面沉积的Ag晶粒分布数量更多、一致性更好,从而更容易收集光生电流传输到Ag栅线,改善了太阳电池的性能。     

基于双结模型非理想太阳能电池伏安特性参数数值分析

提出了一种对于太阳电池光照条件和暗特性条件下对其伏安特性全段进行拟合提取参数的改进方法.对太阳电池J-V曲线进行分段, 提取每段的4个关键参数: 串联电阻(Rs)、并联电阻(Rsh)、品质因子(n)、反向饱和电流密度(J0).这种方法采用了双结电路模型法, 并以CdS/CdTe薄膜电池为例进行了光照下和暗特性分析, 得到了比单结电流模型更多的参数, 并且具有较高的拟合精度(误差<0.7%).     

大功率660 nm半导体激光器的电流电压特性

利用Zn扩散形成非吸收窗口技术,制备了大功率红光660 nm半导体激光器。对封装后的器件进行电流电压(I-V)特性测试。由于材料本身串联电阻的影响,半导体激光器的I-V曲线不再符合理想二极管I-V特性方程。通过数据拟合,得到半导体激光器的串联电阻约为0.5Ω。测试中还发现了两种异常I-V曲线,分别源于器件并联电阻及寄生二极管的影响。对每种I-V曲线建立了电路模型,并推导了I-V特性方程。分析认为制作过程中的金属工艺、烧结工艺和Zn扩散工艺等都会影响半导体激光器的电流分布及I-V特性。I-V特性测试可以用于半导体激光器的工艺监控与失效分析等。     

回熔过程对HgCdTe长波红外光伏探测器的I-V性能的影响

对三种不同工艺的HgCdTe长波器件(标准工艺、回熔处理、离子注入后退火)的I-V性能分别进行测试,并通过理论计算与实验数据拟合提取上述器件参数,分析暗电流机制及导致暗电流变化的原因。文章中使用的暗电流机制的模型由扩散电流、产生-复合电流、缺陷辅助隧道电流和直接隧道电流组成。从拟合得到的器件参数中可以发现回熔过程中产生了大量的缺陷,导致缺陷辅助隧道电流、产生复合电流显著增加,器件反偏电阻减小,I-V性能变差。与离子注入后退火器件的性能变化相比,推测导致器件回熔后性能下降的原因是ZnS钝化层受热不稳定。     

纳米硅/晶体硅异质结电池的暗I-V特性和输运机制

采用HWCVD技术在P型CZ晶体硅衬底上制备了纳米硅／晶体硅异质结太阳电池,测量了晶体硅表面在不同氢处理时间下的异质结的暗I-V特性和相应的电池性能参数．室温下的正向暗I-V特性采用双二极管模型来拟合,可将0～1V的电压范围区分为4个区域：旁路电阻（0～0．15V）、非理想二极管2（0．15～0．3V）、理想二极管1（0．3～0．5V）和串联电阻（〉0．5V）．拟合结果表明,适当的氖处理时间（～30s）可有效降低非理想二极管的理想因子n2,即降低界面复合电流,表明具有好的界面特性．对于282～335K的暗I—V温度特性的研究表明,在0．15～0．3V的低电压范围,暗电流主要由耗尽区的复合电流提供,0．3～0．5V电压范围,对输运起主要作用的是隧穿过程,该过程可用通过界面陷阱能级的隧穿模型来解释．     

提取太阳电池参数的解析方法和显函数方法的研究

对提取太阳电池参数的解析和显函数两种方法进行了比较研究。结果表明,两种方法均可以正确拟合太阳电池电流-电压特性,显函数方法的拟合精度比解析方法高约1倍,而解析方法的运行时间约是显函数方法的1%。在解析方法中,最大功率点选取将影响拟合参数的结果;而显函数方法,初始值的选取将影响太阳电池参数的拟合结果,选择合适的初始值可以大大提高太阳电池参数的拟合精度。     

太阳能发电技术与应用 第三讲:最大功率点跟踪技术

3.1硅太阳电池的等效电路太阳电池一般由半导体材料制成,图1是常见的硅太阳电池在日照情况下的等效电路。图中Isc称之为光生电流,或短路电流,其值正比于太阳电池的面积和入射光的辐照度,而且它是在负载RL短路时,太阳电池可能输出的最大电流;ID为暗电流,是太阳电池在无光照情况下外加电压时,流过内部p-n结的单向电流。     

基于可控电流源的太阳电池模型参数测试方法

太阳电池等效模型参数测试是太阳电池生产应用与光伏研究的必备环节,针对传统太阳电池测试系统不但成本高,而且无法测试交流模型参数,提出了一种基于可控电流源的太阳电池等效模型参数测试方法,并成功搭建微型测试系统.实验结果表明,基于该方法搭建的微型测试系统不但可以精确测量太阳电池的直流模型参数(并联电阻Rsh,串联电阻Rs,开路电压Voc,短路电流Isc,填充因子FF,最大功率Pmax,转换效率η),而且可以测量电池的交流模型参数(寄生结电容Ci),同时还可以用于判断电池组件的内部结构.该系统测试相对误差小于4％,实验数据表明了该系统在太阳电池光电特性研究中的科学性与可靠性.     

晶体硅太阳电池烧结工艺优化

金属电极与硅的接触电阻是影响太阳电池填充因子和短路电流进而影响光电转换效率的重要因素之一。首先对晶体硅太阳电池的烧结工艺进行了优化,利用平台式烧结温度曲线代替陡坡式烧结温度曲线。然后,采用Core Scan方法测试工艺优化前后晶体硅太阳电池丝网印刷烧结银电极与硅之间的接触电阻Rc,并测试了工艺优化前后电池片的IV特性。数据显示烧结工艺优化后可减小银电极与硅的接触电阻,从而提高了太阳电池的光电转化效率。平台式烧结温度曲线更适用浅结高方阻的电池结构。     

Analysis of the current-voltage characteristic of solar cells

The parameters for the generation-recombination current and diffusion current of a solar cell including series and shunt resistance are determined experimentally by a new method through applying equal current steps to the cell rather than voltage steps. This allows a simple evaluation of the generation-recombination current term in the presence of a low shunt resistance of the cell. In a second measuring cycle the series resistance and the diffusion current term of the cell are determined in a similar way. The presented method is a relative simple and low-cost analysis and it allows a quick and accurate on-line determination of the parameters of the current-voltage characteristic, especially for silicon solar cells.     

Simple parameter extraction method for illuminated solar cells

This paper presents a simple and successful method for evaluating the series resistance, the ideality factor, the saturation current and the shunt conductance in illuminated solar cells. The approach involves the use of an auxiliary function and a computer-fitting routine. The validity of this method has been confirmed by the way of current–voltage measurements of a commercial silicon solar cell, a module and a plastic solar cell.     

Thick-film metallization for solar cell applications

The use of an integral printing technique for the fabrication of silicon solar cells is attractive due to its throughput rate, materials utilization, and modular, automatable design. The transfer of this technology from single crystal to semicrystalline silicon requires a significant amount of process optimization. Processing parameters found to be critical include the optimum glass frit content in the silver-based inks, the silver ink firing temperature, and the formation of the back-surface field using screen-printed aluminum layers. Open-circuit voltages as high as 617 mV have been achieved using a novel BSF approach on 4-in wafers. Important mechanisms controlling ink contact resistance, ink sheet resistivity, and ohmic contact on and silicon materials are discussed in this paper. The solar cell stability is a function of the glass frit and the firing temperature of the silver-based inks. Finally, a simple economic analysis, based on the IPEG technique, indicates that screen printing is a cost-effective option when the cell manufacturing is done on a large scale.     

The effect of electron damage on silicon solar cells coated with diamond‐like carbon films

The unique properties of the diamond‐like carbon (a:DLC), such as high mechanical hardness and abrasive resistance, optical transparency in the visible and IR spectral regions and high thermal conductivity, provide this material with advantages over other types of protecting materials for solar cells. Furthermore, the a:DLC films are inert to corrosive gases and other corrosive agents. Resistance to radiation damage of the a:DLC films deposited on solar cells is very important for space application. In the study we investigate the effect of electron damage on silicon solar cells coated with a:DLC films. We measure the I – V characteristic and the spectral response and calculate the values of the seven parameters of the double exponential solar cell model (usually not investigated) as a function of electron fluence irradiation. In addition we obtain also the usual external parameters I_sc, V_oc, I_m, V_m, FF, and efficiency) of the solar cells. We investigate solar cells with and without anti‐reflecting coating coated with a:DLC films which were exposed to electron radiation. The main findings show that the solar cells with a:DLC films of thickness up to 500 nm degrade similarly to regular silicon cells exposed to electron irradiation. The degradation of the spectral response of the solar cell is mainly in the range of longer wavelengths and the irradiation affects the solar cell parameters (mainly the reverse saturation currents). Copyright © 2000 John Wiley & Sons, Ltd.     

Ni/Cu electroplating,a worthwhile alternative to use instead of Ag screen-printed front side metallization of conventional solar cells

For commercial purposes, it is necessary to manufacture high-efficiency and low-cost solar cells using simple processes. The front contact formation is one of the most critical steps in solar cell processing. Although silver paste screen-printed solar cells are the most widespread on the photovoltaic market, their efficiency is strongly limited as a result of shading and resistive losses, or more precisely the high contact resistance. Cu metallization for crystalline Si solar cells has attracted much attention as an alternative to the screen-printing technology. The low-cost Ni/Cu metal contact is regarded as the next generation of metallization processes to still improve the efficiency with a low specific contact resistance; it is formed using low-cost electroless plating and electroplating. A diffusion barrier should be placed between Cu and Si, to prevent Cu diffusion. Ni is shown to be an adequate barrier to Cu diffusion. For these reasons, geometry optimization of metal contacts of the front face, deposited by commercial processes, is investigated in this paper, in order to improve the spectral response of conventional multicrystalline mc-Si silicon solar cells. Their efficiency variation is analyzed as a function of changes in cell parameters (finger separation distance, height and width of finger, sheet resistance emitter...) using simulation programs in MATLAB, using contours to represent the efficiency evolution in terms of two variables. Efficiency gain of more than 0.7% has been achieved in this study. The simulation results were then compared with experimental data in order to be validated.     

Ag纳米粒子等离子体共振增强太阳能电池吸收

针对薄膜太阳能电池硅薄膜层吸收效率较低的问题,提出了运用金属纳米粒子局域表面等离子体共振(LSPR)增强太阳能电池的吸收效率,采用时域有限差分(FDTD)法,模拟计算了太阳能电池中不同厚度的硅薄膜层吸收特性,分析了不同几何参数的矩形Ag纳米粒子与Ag背反射膜对增强太阳能电池吸收效率的影响作用。计算结果表明,硅薄膜层厚度为500nm的太阳能电池具有较高的吸收效率,通过调整Ag纳米粒子的相关参数,有效地降低了太阳电池硅薄膜表面的反射损耗,取得最大吸收增强因子为1.35。Ag背反射膜有效地降低了Ag纳米粒子硅薄膜结构的透射损耗,其最大的吸收增强因子达到1.42。     

High‐Temperature Contact Formation on n‐Type Silicon: Basic Reactions and Contact Model for Seed‐Layer Contacts

Contact formation on n‐type silicon, especially using a high‐temperature process, has been the subject of research for more than 40 years. After its application in microelectronics, n‐type silicon is widely used in silicon solar cells as the emitter layer. The formation of a low ohmic contact grid using an industrially feasible process step is one of the key features required to improve the solar‐cell efficiency. The contact materials, typically deposited in a printing step, have to fulfil several functions: opening the dielectric antireflection layer and forming an intimate metal‐semiconductor contact with good mechanical adhesion and low specific contact resistance. As the used contact inks typically contain several functional materials, such as silver and a glass frit, the detailed contact formation is still not entirely understood. Therefore, the chemical reactions during the contact firing process have been studied in detail by thermogravimetric differential thermal analysis in combination with mass spectroscopy. Based on these studies, a contact ink has been developed, optimized and tested on silicon solar cells. In this paper, the mechanism of the etching process, the opening of a dielectric layer, the influence of different atmospheres and the impact of the glass‐frit content are investigated. The observed microscopic contact structure, the resulting electrical solar‐cell parameters and the studied reactions are combined to clarify the physics behind the high‐temperature contact formation.     

Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells.     

废弃多晶硅太阳电池回收高纯硅片工艺研究

论述分析了国内外晶体硅太阳电池回收技术现状,研究了太阳电池的结构及制备工艺,提出了废弃多晶硅太阳电池回收高纯硅片的工艺.依次去除铝背场/铝硅合金层/背银、氮化硅减反膜/正银、磷扩散层及金属杂质,得到高纯硅片.硅原料的回收率高达76.4％,回收的高纯硅片经检验检测,其电阻率、间隙氧浓度、代位碳含量和少子寿命均符合GB/T 29055-2012中规定的性能参数.该回收工艺路线简单,回收率高,成本低,适于产业化推广.废弃太阳电池的回收再利用不仅可以在一定程度上缓解硅原料短缺的问题,还可以减少废弃的太阳电池给环境造成负担.