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基于非平衡格林函数(NEGF)的量子输运理论框架,对双栅MOSFET进行了二维实空间数值模拟。在对表征载流子电势的泊松方程自洽求解后,感兴趣的物理量(如亚阈值摆幅、漏致势垒下降、载流子密度、电流密度等)可以被求得,观察了由栅极注入效应导致的二维电荷分布,并对不同电介质材料对栅极漏电流的影响进行了研究。此外,还通过调整电介质参数并进行比较的方法,研究了电介质的有效质量、介电常数、导带偏移对栅极漏电流的影响。该模拟方法为双栅MOSFET中载流子自栅极的注入提供了良好的物理图景,对器件特性的分析和比较有助于栅氧层高k电介质材料的选取。 相似文献
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Eberle W. Zhiliang Zhang Yan-Fei Liu Sen P.C. 《Power Electronics, IEEE Transactions on》2008,23(2):678-691
In this paper, a new current source gate drive circuit is proposed for power MOSFETs. The proposed circuit achieves quick turn on and turn off transition times to reduce switching loss and conduction loss in power MOSFETs. In addition, it can recover a portion of the CV gate energy normally dissipated in a conventional driver. The circuit consists of four controlled switches and a small inductor (typically 100 nH or less). The current through the inductor is discontinuous in order to minimize circulating current conduction loss. This also allows the driver to operate effectively over a wide range of duty cycles with constant peak current-a significant advantage for many applications since turn on and turn off times do not vary with the operating point. Experimental results are presented for the proposed driver operating in a boost converter at 1 MHz, 5 V input, 10 V/5 A output. At 5 V gate drive, a 2.9% efficiency improvement is achieved representing a loss savings of 24.8% in comparison to a conventional driver. 相似文献
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浅谈双电源自动切换开关的应用 总被引:1,自引:0,他引:1
随着科学技术的进步,各台站对供电可靠性的要求越来越高,而目前各台站在双电源供电的低压侧仍然采用手动操作的双向隔离开关进行倒闸操作,常常会因误操作而引发事故。所以,先进的双电源自动切换开关设备很有必要应用到各个台站的供电系统中。这里主要阐述了双电源自动切换开关的原理及其应用。 相似文献
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GaAs MESFET栅极漏电流退化机理分析 总被引:2,自引:2,他引:0
高温存储试验后某种GaAs MESFET的栅-漏极正向和反向漏电流增大。为分析失效机理,测定了试验前后栅-漏极低压正向电流随温度的变化,定性估计了试验前后复合-产生中心浓度的变化,确定肖特基势垒接触有源层的复合-产生中心浓度增加是两种漏电流增大的原因,为高温下GaAs MESFET的肖特基势垒接触存在栅金属下沉和扩散提供了证据。 相似文献
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Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current 总被引:1,自引:0,他引:1
Nomoto K. Tajima T. Mishima T. Satoh M. Nakamura T. 《Electron Device Letters, IEEE》2007,28(11):939-941
We demonstrate Si ion-implanted GaN/AlGaN/GaN high-electron mobility transistors with extremely low gate leakage current and low source resistance without any recess etching process. The source/drain (S/D) regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into S/D regions with an energy of 80 keV, the performances were significantly improved. On-resistance decreased from 26.2 to 4.3 Omegaldrmm. Saturation drain current and maximum transconductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm. 相似文献
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Min-Hsiung Hsieh Shuen-Lin Jeng 《Reliability, IEEE Transactions on》2007,56(3):369-380
Using degradation measurements is becoming more important in reliability studies because fewer failures are observed during short experiment times. Most of the literature discusses continuous degradation processes such as Wiener, gamma, linear, and nonlinear random effect processes. However, some types of degradation processes do not occur in a continuous pattern. Discrete degradations have been found in many practical problems, such as leakage current of thin gate oxides in nano-technology, crack growth of metal fatigue, and fatigue damage of laminates used for industrial specimens. In this research, we establish a procedure based on a likelihood approach to assess the reliability using a discrete degradation model. A non-homogeneous Weibull compound Poisson model with accelerated stress variables is considered. We provide a general maximum likelihood approach for the estimates of model parameters, and derive the breakdown time distributions. A data set measuring the leakage current of nanometer scale gate oxides is analyzed by using the procedure. Goodness-of-fit tests are considered to check the proposed models for the amount of degradation increment, and the rate of event occurrence. The estimated reliabilities are calculated at lower stress of the accelerated variable, and the approximate confidence intervals of quantiles for breakdown time distribution are given to quantify the uncertainty of the estimates. Finally, a simulation study based on the gate oxide data is built for the discrete degradation model to explore the finite sample properties of the proposed procedure. 相似文献
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HfO_2高k栅介质漏电流机制和SILC效应 总被引:5,自引:2,他引:3
利用室温下反应磁控溅射的方法在 p- Si(1 0 0 )衬底上制备了 Hf O2 栅介质层 ,研究了 Hf O2 高 k栅介质的电流传输机制和应力引起泄漏电流 (SIL C)效应 .对 Hf O2 栅介质泄漏电流输运机制的分析表明 ,在电子由衬底注入的情况下 ,泄漏电流主要由 Schottky发射机制引起 ,而在电子由栅注入的情况下 ,泄漏电流由 Schottky发射和 Frenkel-Poole发射两种机制共同引起 .通过对 SIL C的分析 ,在没有加应力前 Hf O2 / Si界面层存在较少的界面陷阱 ,而加上负的栅压应力后在界面处会产生新的界面陷阱 ,随着新产生界面陷阱的增多 ,这时在衬底注入的情况下 ,电流传 相似文献
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利用室温下反应磁控溅射的方法在p-Si(100)衬底上制备了HfO2栅介质层,研究了HfO2高k栅介质的电流传输机制和应力引起泄漏电流(SILC)效应.对HfO2栅介质泄漏电流输运机制的分析表明,在电子由衬底注入的情况下,泄漏电流主要由Schottky发射机制引起,而在电子由栅注入的情况下,泄漏电流由Schottky发射和Frenkel-Poole发射两种机制共同引起.通过对SILC的分析,在没有加应力前HfO2/Si界面层存在较少的界面陷阱,而加上负的栅压应力后在界面处会产生新的界面陷阱,随着新产生界面陷阱的增多,这时在衬底注入的情况下,电流传输机制就不仅仅是由Schottky发射机制引起,而存在Frenkel-Poole发射机制起作用.同时研究表明面积对SILC效应的影响很小. 相似文献
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理论分析了MOSFET关态泄漏电流产生的物理机制,深入研究了栅氧化层厚度为1.4nm MOSFET传统关态下边缘直接隧穿栅泄漏现象.结果表明:边缘直接隧穿电流服从指数变化规律;传统关态下边缘直接隧穿对长沟道器件的影响大于短沟道器件;衬底反偏在一定程度上减小边缘直接隧穿泄漏电流. 相似文献
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一般USB电源开关发生过流时,由于忽略寄生电感使得电源开关可能由于过压而造成损坏。针对USB电源开关过流的情况,设计了一种USB电源开关的过流保护电路,分析了USB电源开关过流保护的工作原理及实现方法,并提出了两种优化过流保护电路的设计方法,最后进行仿真验证,获得了预期的结果。 相似文献
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利用室温下反应磁控溅射结合炉退火的方法在P-Si(100)衬底上制备了Al2O3栅介质层,研究了不同的溅射气氛和退火条件对Al2O3栅介质层物理特性的影响.结果表明:在较高温度下N2气氛中退火有助于减小泄漏电流;在O2气氛中退火有助于减少Al2O3栅介质中的氧空位缺陷.对Al2O3栅介质泄漏电流输运机制的分析表明,在电子由衬底注入的情况下,泄漏电流主要由Schottky发射机制引起,而在电子由栅注入的情况下,泄漏电流可能由Schottky发射和Frenkel-Poole发射两种机制共同引起. 相似文献
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Al_2O_3栅介质的制备工艺及其泄漏电流输运机制 总被引:4,自引:0,他引:4
利用室温下反应磁控溅射结合炉退火的方法在P Si(10 0 )衬底上制备了Al2 O3 栅介质层,研究了不同的溅射气氛和退火条件对Al2 O3 栅介质层物理特性的影响.结果表明:在较高温度下N2 气氛中退火有助于减小泄漏电流;在O2 气氛中退火有助于减少Al2 O3 栅介质中的氧空位缺陷.对Al2 O3 栅介质泄漏电流输运机制的分析表明,在电子由衬底注入的情况下,泄漏电流主要由Schottky发射机制引起,而在电子由栅注入的情况下,泄漏电流可能由Schot tky发射和Frenkel Poole发射两种机制共同引起. 相似文献