Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N₂) as cyclopentadienyl magnesium (Cp₂Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N₂ and the injection time of N₂. Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current–voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.     

Enhanced light extraction from GaN-based LEDs with a bottom-up assembled photonic crystal

Photonic crystal (PhC) structure is an efficient tool for light extraction from light-emitting diodes (LEDs). The fabrication of a large area PhC structure on the light output surface of LEDs often involves sophisticated equipments such as nanoimprint lithography machine. In this study a monolayer of polystyrene (PS) microspheres was employed as a template to fabricate a noninvasive photonic crystal of indium tin oxide (ITO) on the surface of GaN-based LED. PS spheres can help to form periodic arrangement of bowl-like holes, a photonic crystal with gradually changed fill factors. Importantly, the electroluminescence intensity of LED with a photonic crystal was significantly enhanced by 1.5 times compared to that of the conventional one under various forward injection currents.     

A self-assembled Ag nanoparticle agglomeration process on graphene for enhanced light output in GaN-based LEDs

We introduce Ag nanoparticles fabricated by a self-assembled agglomeration process in order to enhance the electrical properties, adhesive strength, and reliability of the graphene spreading layer in inorganic-based optoelectronic devices. Here, we fabricated InGaN/GaN multi-quantum-well (MQW) blue LEDs having various current spreading layers: graphene only, graphene with Ag nanoparticles covering the surface, and graphene with Ag nanoparticles only in selectively patterned micro-circles. Although the Ag nanoparticles were found to act as an additional current path that increases the current spreading, optical properties such as transmittance also need to be considered when the Ag nanoparticles are combined with graphene. As a result, LEDs having a graphene spreading layer with Ag nanoparticles formed in selectively patterned micro-circles displayed more uniform and stable light emission and 1.7 times higher light output power than graphene only LEDs.     

Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic quasi-crystal overgrowth

In this paper, GaN-based LEDs with a SiO2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 microm) was enhanced by a factor of 1.20. After 1000 h life test (55 degrees C/50 mA) condition, Normalized output power of LED with a SiO2 PQC pattern (LED III (d = 1.2 microm)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.     

宽带可调谐光源瞬时波长测量方法研究

激光波长作为“米”基准的重要实现途径之一，其量值准确性在计量校准、精密测量以及光谱探测等领域具有十分重要的意义。目前基于标准物质吸收谱线的波长基准仅能用于单一波长的计量校准，对于宽带光源波长校准手段有限。本文开展宽带连续调谐激光波长校准技术研究，利用飞秒激光频率梳宽光谱、光频可溯源至原子频率标准、稳定性高的特点，对宽带调谐光源在调谐输出时的连续光波长进行测量，最终实现了1 nm带宽下可调谐激光器调谐输出过程中瞬时值的测量，并利用该结果对可调谐激光器在121 GHz带宽的调频非线性度进行了评价。     

Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside

InGaN/GaN multi-quantum well light-emitting diodes (LEDs) are conventionally grown on a sapphire substrate due to a lack of compatible substrates with a high compressive strain. This is a result of the relatively large lattice, and thermal expansion coefficient mismatches between GaN and sapphire. The compressive strain is considered to be a major obstacle to further improve next-generation high-performance GaN-based LEDs. In this paper, we have designed, electroplated, and tested an efficient substrate using a patterned copper (Cu) layer on the backside of sapphire to relax the compressive strain in a GaN epilayer. The patterned Cu layer has a significant function in that it supports the GaN/sapphire LEDs with an external tensile stress. The external tensile stress is capable of compensating for the compressive strain in the GaN/sapphire LEDs by controlling the curvature of the wafer bowing. This patterned Cu layer, when applied to the GaN/sapphire LEDs, suppresses the compressive strain by up to 0.28 GPa. The GaN-based LEDs on this innovative and effective sapphire/Cu substrate offer improved optical and electrical performance.     

High-density silver nanoparticle film with temperature-controllable interparticle spacing for a tunable surface enhanced Raman scattering substrate

The formation of high-density silver nanoparticles and a novel method to precisely control the spacing between nanoparticles by temperature are demonstrated for a tunable surface enhanced Raman scattering substrates. The high-density nanoparticle thin film is accomplished by self-assembling through the Langmuir-Blodgett (LB) technique on a water surface and transferring the particle monolayer to a temperature-responsive polymer membrane. The temperature-responsive polymer membrane allows producing a dynamic surface enhanced Raman scattering substrate. The plasmon peak of the silver nanoparticle film red shifts up to 110 nm with increasing temperature. The high-density particle film serves as an excellent substrate for surface-enhanced Raman spectroscopy (SERS), and the scattering signal enhancement factor can be dynamically tuned by the thermally activated SERS substrate. The SERS spectra of Rhodamine 6G on a high-density silver particle film at various temperatures is characterized to demonstrate the tunable plasmon coupling between high-density nanoparticles.     

Intense luminescence with a tunable wavelength from films of tetrahedral amorphous hydrogenated carbon on a fused quartz substrate

A model is proposed for a new type of optoelectronic device that utilizes the luminescence of a film of ta-C:H in the plane of a fused quartz substrate. It is observed that the luminescence radiation propagating in the interior of the substrate becomes highly monochromatized. However, along the normal to the plane of the substrate luminescence occurs over a broad wavelength range, as is typical of ta-C:H. Visually this luminescence is white, while the color of the luminescence in the plane of the substrate depends on the film thickness. A film with a variable thickness yields radiation with a color that varies from turquoise to red. This monochromatization effect in a film/substrate system is observed for the first time. Pis’ma Zh. Tekh. Fiz. 23, 77–81 (February 26, 1997)     

Enhancement of the light extraction efficiency in organic light emitting diodes utilizing a porous alumina film

The light extraction efficiencies of organic light emitting diodes (OLEDs) utilizing various kinds of porous alumina films with different pore diameters were investigated. The OLEDs with the porous alumina film deposited on the glass surface were fabricated to improve their light extraction efficiency. The porous alumina film was fabricated by using a two step anodizing electrochemical procedure. The current densities as functions of the applied voltage do not significantly change, regardless of the existence and the magnitude of the pore diameter in the porous alumina film. The luminance efficiency of the OLEDs increased with increasing pore diameter. The luminance efficiency of the OLEDs utilizing the porous alumina film with a pore diameter of 70 nm was enhanced approximately 9% in comparison with that of the OLEDs without the porous alumina film. These results indicate that highly efficient OLEDs can be fabricated using a porous alumina film with an optimum pore diameter.     

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth

We have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 microm2) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 microm. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.     

Estimation method for the light extraction efficiency of light-emitting elements with a rigorous grating diffraction theory

The light extraction efficiency of a light-emitting element with microstructured surface is analyzed with a rigorous grating diffraction theory. The grating theory reveals an improvement of extraction efficiency due to diffraction of light by the surface microstructure. The simulation results show that the improvement of extraction efficiency is due mainly to the reflected diffraction rather than to the transmitted diffraction. A part of total-internal-reflection light is diffracted into directions at less than the critical angle. Extraction efficiency is improved by multiple reflection and diffraction of light in a high-refractive-index layer. We propose a simple design method for an efficient surface microstructure from the viewpoint of reflected diffraction.     

Fabrication of high performance surface enhanced Raman scattering substrates by a solid-state ionics method

Silver nanostructures were prepared by a solid-state ionics method using fast ionic conductor RbAg(4)I(5) films under a direct current electric field (DCEF). The surface morphology of the silver nanostructures grown under different constant current fields was characterized by scanning electron microscopy (SEM). Rhodamine 6G (R6G) aqueous solutions were used as probe molecules to detect the Raman enhancement performance of the silver nanostructure substrates. The effect of external electric field current intensity on the surface morphology of the silver nanostructures during the preparation was studied in detail. The enhancement effect of the silver nanostructure surface enhanced Raman scattering (SERS) substrates with different surface morphologies toward R6G was determined. We found that disordered silver nanowires (DSNW), ordered silver nanowires (OSNW), densely arranged silver nanobamboo arrays (SNBA) and compactly arranged silver nanobud clusters (SNBC) were respectively obtained when the constant current intensity was 3?μA, 5?μA, 8?μA and 12?μA under the same vacuum evaporation plating conditions. The limiting concentrations of R6G for these SERS substrates were found to be 10(-7)?mol?l(-1), 10(-13)?mol?l(-1), 10(-13)?mol?l(-1) and 10(-16)?mol?l(-1), respectively.     

Fabrication of large area nanoprism arrays and their application for surface enhanced Raman spectroscopy

This work demonstrates the fabrication of metallic nanoprism (triangular nanostructure) arrays using a low-cost and high-throughput process. In the method, the triangular structure is defined by the shadow of a pyramid during angle evaporation of a metal etching mask. The pyramids were created by nanoimprint lithography in polymethylmethacrylate (PMMA) using a mould having an inverse-pyramid-shaped hole array formed by KOH wet etching of silicon. Silver and gold nanoprism arrays with a period of 200?nm and an edge length of 100?nm have been fabricated and used as effective substrates for surface enhanced Raman spectroscopy (SERS) detection of rhodamine 6G (R6G) molecules. Numerical calculations confirmed the great enhancement of electric field near the sharp nanoprism corners, as well as the detrimental effect of the chromium adhesion layer on localized surface plasmon resonance. The current method can also be used to fabricate non-equilateral nanoprism and three-dimensional (3D) nanopyramid arrays, and it can be readily extended to other metals.     

Fabrication of a reversible protein array directly from cell lysate using a stimuli-responsive polypeptide

We report a new method to reversibly bind proteins to a surface in a functionally active orientation directly from cell lysate by exploiting a thermodynamically reversible hydrophilic-hydrophobic lower critical solution temperature (LCST) transition exhibited by a recombinant, stimuli-responsive elastin-like polypeptide (ELP). An ELP is covalently micropatterned on a glass surface against an inert BSA background. The ELP-patterned surface is incubated with the soluble fraction of E. coli lysate containing an expressed ELP fusion protein, which is appended with the same ELP as on the surface. The LCST transition of the grafted ELP and the ELP fusion protein is simultaneously triggered by an external stimulus. The LCST transition results in capture of the ELP fusion protein from solution onto the immobilized ELP by hydrophobic interactions between the grafted ELP and the ELP fusion protein. The captured ELP fusion protein is oriented such that the fusion partner is accessible to binding of its target from solution. We also demonstrate that TRAP is reversible; the bound protein-ligand complex is released from the surface by reversing the LCST transition. The triggered control of interfacial properties provided by an immobilized stimuli-responsive polypeptide at the solid-water interface is an enabling technology that allows reversible and functional presentation of ELP fusion proteins on a surface directly from cell lysate without the necessity of intermediate purification steps and subsequent recovery of the protein-ligand complex for downstream analysis by other analytical techniques. TRAP has application in lab-on-a-chip bioanalytical devices as well as in the fabrication of peptide and protein arrays.     

Fabrication of ZnO/ZnS/ZnSe nanosheets for enhanced photocatalytic activity under simulated solar light

Journal of Materials Science: Materials in Electronics - Ternary composite ZnO/ZnS/ZnSe nanosheets (NSs) with diverse proportions of three modules successfully manufactured by a plain two-step...     

Diffraction efficiency of a grating coupler for an array illuminator

The diffraction efficiency of a grating coupler having a surface-relief grating is calculated by the use of coupled-wave theory. The grating couplers are fabricated to examine the validity of the calculated result. The dependence of the measured diffraction efficiency on the groove depth of the grating coupler agrees well with the calculated results. The array illuminator, which emits 10 and 20 beams with equal intensity, is designed and fabricated through the use of these numerical results. The uniformity error of the output beam caused by the error of the diffraction efficiency is also discussed.     

Fabrication of a one-dimensional array of nanopores horizontally aligned on a Si substrate

A one-dimensional array of nanopores horizontally aligned on a silicon substrate was successfully fabricated by anodic aluminum oxidation (AAO) using a modified two-step procedure. SEM pictures show clear nanostructures of well-aligned one-dimensional nanopore arrays without cracks at the interfaces of the sandwiched structures. The processes are compatible with the planar silicon integrated circuit processing technology, promising for applications in nanoelectronics. The formation mechanism of a single nanopore array on Si substrates was also discussed.     

Thermal stability of N-polar n-type Ohmic contact for GaN-based light emitting diode on Si substrate

Thermal stability of N-polar n-type Ohmic contact for GaN light emitting diode (LED) on Si substrate was investigated. Al/Ti/Au were deposited as the contacts on the N-polar n-type GaN with and without AlN buffer layer on the surface, respectively, and both contacts exhibited Ohmic behaviors. The samples with AlN showed excellent Ohmic contact thermal stability when annealed below 700 °C, while the samples without AlN experienced serious degradation on electrical properties after being annealed in the temperature range of 250-600 °C. After the process of aging at 30 mA (155 A/cm²) and room temperature for 1000 h, operating voltage increase less than 0.05 V for LEDs with AlN but more than 0.45 V for LEDs without AlN. Therefore, we conclude that the existence of AlN buffer layer is a key of forming high stable Ohmic contact for GaN-based vertical structure LED on Si substrate.     

Hydrothermal Sm-doped tungsten oxide vertically plate-like array photoelectrode and its enhanced photoelectrocatalytic efficiency for degradation of organic dyes

Samarium doped tungsten oxide film was synthesized by a hydrothermal method with sodium tungstate as W precursor and samarium oxide as dopant. After annealing at 450 °C for 0.5 h, the morphology and structural characterization of as-prepared films were determined with scanning electron microscopy, X-ray diffraction and high-resolution transmission electron microscope. For the pure and Sm-doped WO₃ films serving as the photoanodes, photoelectrocatalytic properties were demonstrated by degrading methyl orange and methylene blue solution, showing that Sm-doped WO₃ film has faster degrading rate than pure WO₃ film. Photoelectrochemical properties were investigated using linear sweep voltammetry, electrochemical impedance spectroscopy, Mott–Schottky and incident photon to current conversion efficiency. Sm-doped WO₃ achieves a high photocurrent of 1.50 mA cm^?2 at 1.4 V versus. Ag/AgCl, which is 1.8 times as high as that of pure WO₃ film (0.83 mA cm^?2). Moreover, photogenerated hole injection efficiency was improved by retarding the recombination at the interface of electrode/electrolyte. The results indicate the Sm₂O₃ formed by excess doping led to a better photoelectrocatalytic and photoelectrochemical activities of Sm-doped WO₃ film, suggesting that the doping of Sm is a favorable strategy to improve the performance of WO₃ film photoanode.