基于ZigBee技术的RFID系统的设计

现有的RFID（Radio Frequency Identification system,射频辨识系统）技术存在数据安全性不高、识别距离短、设备成本高以及读写系统工作灵活性不强等问题。为了解决RFID技术的上述问题,将ZigBee技术引入RFID系统中,使得基于ZigBee技术的无线射频识别系统有了明显的改良。从远距离RFID系统的设计要求、工作原理着手,提出了该系统的总体设计方案。文章实现了远距离RFID系统的软硬件设计,解决了现有RFID系统的一些弊端,拓宽了该系统的应用范围,并对该技术的发展和应用前景作了展望。     

基于RFID和ZigBee技术的物联网实验系统硬件设计与实现

基于射频识别技术(Radio frequency identification technology,RFID)和近距离无线组网通讯技术(ZigBee:紫蜂)这两大物联网关键技术,设计以ZigBee协议作为传输协议的物联网主从节点以及RFID读写模块,得到了物联网实验系统的总体方案,并实现了一套完整的物联网实验系统硬件平台.测试结果验证了该实验系统完全满足设计要求,可以应用于教学实验,也可作为其他物联网应用系统的开发.     

射频识别的仓储信息采集及管理系统设计

射频识别技术(Radio Frequency Identification ,RFID),是一种非接触式的自动识别技术.它利用无线电磁波传输数据,并可根据不同的场景使用低频、高频、超高频、微波等不同的频率,发挥它们各自的优点,实现信息快速采集的目的,此外RFID标签还具有不怕脏污与可重复使用等优点,RFID技术应用越来越广泛.本文根据仓储管理信息模型,设计了基于RFID技术的仓储管理系统,并对其子系统进行详细分析,根据实际的仓储环境确定阅读器、天线以及射频标签的选用原则.通过在仓储管理中引入RFID技术,解决原有仓库盘点工作作业量大,周期长,效率低下等不足,最后达到简化作业流程、改善盘点质量、降低运作成本的效果.测试表明本系统既提高了仓储信息的精度,又实现了仓储管理的实时自动化,非常适合应用于中小型仓库的仓储管理.     

面向物流仓储应用的移动式RFID读写终端设计

物流企业的仓储管理是现代物流最为重要、必不可少的基本环节之一。现有的RFID读写系统基本是建立在有线传输的基础之上,存在读写器的位置固定、灵活性差、数据传输距离短以及设备成本高等缺点。本文针对上述缺点,结合ZigBee和RFID技术,设计和实现了一种移动RFID读写终端系统,拓展了RFID在物流企业仓储管理系统中的应用范围。     

基于RFID的仓储管理系统

开发了一个基于RFID(射频识别技术)的自动化仓储管理系统,以RFID技术作为仓储管理的技术纽带,实现物品出入库管理、库存管理、防盗报警、报表管理和系统管理,方便不同人员进行统计、查询和掌握货物流动情况,完善管理机制,简化人为操控。     

无线射频识别技术在仓储管理中的应用研究

无线射频识别技术(Radio Frequency Identification,RFID)作为一种自动识别技术的高级形式,具有精度高、适应环境能力强等诸多优点。文章结合公司仓储管理现状,从硬件布局和软件两个方面,对无线射频识别技术应用到仓储管理进行设计,并展望预期取得的效果,为企业仓储的发展提供参考。     

基于Zigbee的2.4GHZ的RFID系统的研究

常见射频识别技术存在灵活性差、数据传输距离较短、数据传输的安全性差以及设备的成本较高等缺点。ZigBee无线通信技术与射频识别系统相结合能构建一套基于ZigBee网络的无线射频识别系统,本文介绍了Zigbee组网技术和Zigbee的协议栈的主要内容,采用CC2530作为RFID的标签、阅读器的微处理器和射频芯片,完成多种数据的采集。     

军械器材管理中RFID与WSN的组网研究

提出了一种将RFID和WSN技术融合,利用ZigBee组网来实现军械器材管理的设计方法。将ZigBee技术用于RFID和WSN系统中,可提高系统的数据完整性和可靠性及组网的便捷性。研究采用CC2431为ZigBee节点主控芯片的设计方案,并设计出ZigBee的硬件节点。     

基于RFID的半导体企业仓储偶极子天线

射频识别技术(RFID)在仓库自动化管理中得到扩展应用,许多半导体制造商在晶圆生产、流水作业和仓储管理中都使用了RFID技术来增加工作效率。RFID系统的功能与天线设计息息相关,为了提高半导体企业仓储运作效率,解决标签天线识别面积小且识别过程中错误率高的问题,利用偶极子反向电流对设计出一种新型天线。通过仿真实验表明,增加偶极子的对数并调整电流相位,能够使磁场均匀度增强,识别范围扩大,从而提高了仓储作业的效率,为企业增加了利润。     

基于RFID的仓储管理系统

仓储管理是物流管理的核心部分,其效率直接影响物流业的发展。提出了一种运用射频识别RFID技术进行仓储管理的方法,分析了仓储管理的流程,设计了仓储管理的各个基本模块,以及终端管理的数据库。该设计方案优于传统的条码技术,具有较高的性价比和效率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.