Optical constants of silicone-like (Si:Ox:Cy:Hz) thin films deposited on quartz using hexamethyldisiloxane in a remote RF hollow cathode discharge plasma

Deposition of amorphous silicone-like (Si:O_x:C_y:H_z) thin films in a remote RF hollow cathode discharge plasma using hexamethyldisoloxane as monomer and Ar as feed gas has been investigated for films optical constants and plasma diagnostic as a function of RF power (100-300 W) and precursor flow rate (1-10 sccm). Plasma diagnostic has been performed using Optical Emission Spectroscopy (OES). The optical constants (refractive index, extinction coefficient and dielectric constant) have been obtained by reflection/transmission measurements in the range 300-700 nm. It is found that the refractive index increases from 1.92 to 1.97 with increasing power from 100 to 300 W, and from 1.70 to 1.92 with increasing precursor flow rate from 1 to 10 sccm. The optical energy band gap E_g and the optical-absorption tail ΔE have been estimated from optical absorption spectra, it is found that E_g decreases from 3.28 to 3.14 eV with power increase from 100 to 300 W, and from 3.54 to 3.28 eV with precursor flow rate increase from 1 to 10 sccm. ΔE is found to increase with applied RF power and precursor flow rate increase. The dependence of optical constants on deposition parameters has been correlated to plasma OES.     

The optical properties of Bi3.25La0.75Ti3O12 thin films with different thickness prepared by chemical solution deposition

Bi_3.25La_0.75Ti₃O₁₂(BiLT) thin films with different thickness were successfully deposited onto fused quartz by chemical solution deposition. X-ray diffraction analysis shows that BiLT thin films are polycrystalline with (0 0 2)-preferred orientation. The dispersion of refractive indices of the BiLT thin films was investigated by the optical transmittance spectrum. The optical band gap energy was estimated from the graph of (hνα)² versus hν. The results show that the refractive index and band-gap energy of the BiLT thin films decrease with the films thickness.     

Z-scan measurement for the nonlinear absorption of Bi2.55La0.45TiNbO9 thin films

Bi_2.55La_0.45TiNbO₉ (BLTN-0.45) thin films with layered aurivillius structure were fabricated on fused silica substrates by pulsed laser deposition technique. Their structure, fundamental optical constants, and nonlinear absorption characteristics have been studied. The film exhibits a high transmittance (> 60%) in visible-infrared region. The optical band gap energy was found to be 3.44 eV. The optical constant and thickness of the films were characterized using spectroscopic ellipsometric (SE) method. The nonlinear optical absorption properties of the films were investigated by the single-beam Z-scan method at a wavelength of 800 nm laser with a duration of 80 fs. We obtained the nonlinear absorption coefficient β = 4.64 × 10^− 8 m/W. The results show that the BLTN-0.45 thin film is a promising material for applications in absorbing-type optical device.     

Effect of tellurium addition on the optical and physical properties of germanium selenide glassy semiconductors

Thin films of the glasses Ge₁₀ Se_90−x Te_x (0 ≤ x ≥ 40) have been prepared by melt quenching technique; thin films were evaporated at a pressure of ≈10⁻⁴ Pa. The optical absorption behavior of these thin films was studied from the reflection and transmission spectrum in the spectral range 200-1200 nm. The optical constants i.e optical band gap (E_opt), absorption coefficient, refractive index (n) are calculated. The optical band gap has been estimated using Tauc extrapolation and found to decrease with Te content. The Dispersion of refractive index has been studied in terms of Wemple - Di Domenico model. The value of static refraction index has been found to increase with Te content. The distribution of the possible chemical bonds has been calculated. The obtained results were correlated with the character of the chemical bond for the prepared compositions through a study of parameters such as average heat of atomization (Hs), the cohesive energies of the bonds (CE), The mean bond energy <E> and average coordination number (m).     

Determination of the optical constants of amorphous AsxS100−x films using effective-medium approximation and OJL model

The transmission spectra were used to obtain an efficient parameterization of the spectral dependences of the optical constants of amorphous As–S thin films by applying a suitable dielectric function model. For studying the compositional dependence of the optical constants, different compositions of As_xS_100−x (x = 10, 15, 20, 25, 30 and 40 at%) thin films were deposited by thermal evaporation technique in a base pressure of 7.5 × 10⁻⁶ Torr at room temperature. The transmission spectra (measured in the wavelength range of 0.2–0.9 μm) were analyzed by applying O’Leary, Johnson, and Lim (OJL) model based on the joint density of states (JDOS) functions. However, the best fit of the optical data was obtained by considering the two-layer configuration film; the top layer was assumed to be consisted of a bulk AsS material embedded in voids (air). Therefore, OJL model along with Bruggeman effective-medium approximation (BEMA) model was used to determine the effective optical constants of the As–S thin films. The photon energy dependence of the dielectric function, ? = ?_r − i?_i of the investigated As–S films was presented. The film thickness, absorption coefficient α, refractive index n, extinction coefficient k, static refractive index n(0) and optical band gap E_g have been deduced. It was found that with the increase in arsenic content up to the stoichiometric As₄₀S₆₀, the indirect optical energy gap decreases, while the refractive index increases.     

Laser-induced amorphization and crystallization on Se80Te20−xPbx thin films

Thin films of glassy alloys of a-Se₈₀Te_20−xPb_x (x=2, 6 and 10) was crystallized in a specially designed sample holder under a vacuum of 10⁻² Pa. The amorphous and crystallized films were induced by pulse laser (wavelength: 337.1 nm, frequency: 10 Hz, pulse duration: 4 ns and pulse energy: 0.963 mJ). After laser irradiation on amorphous and crystalline films: optical band gaps were measured. Crystallization and amorphization of chalcogenide films is accompanied by the change in the optical band gap. The change in optical energy gap could be determined by identification of the transformed phase. This change in the optical band gap may be due to the increase in the grain size and the reduction in the disorder of the system.     

Composition dependence of structural and optical properties of Ba(Zrx,Ti1-x)O3 thin films grown on MgO substrates by pulsed laser deposition

Ba(Zr_x,Ti_1-x)O₃ (BZT) films with Zr concentration ranging from 0 to 40% were grown on MgO single crystal substrates by pulsed laser deposition, and their optical properties in the visible range were systematically characterized. A linear increase in the out-of-plane lattice constant of BZT unit cell with increasing Zr content was detected by X-ray diffraction. The surface morphology was observed by atomic force microscopy and the grain size was shown to increase with Zr concentration. Prism coupling and UV-visible transmission spectroscopy techniques were used to analyze the optical properties of the films. Refractive index between 2.15 and 2.3 was observed at 633 and 1547 nm respectively, which decreased with rising Zr content. The BZT films also possessed large optical band gap energy up to 3.92 eV, which increased with rising Zr content. Quadratic electro-optic effect was observed with electro-optic coefficients between 0.11 and 0.81 × 10^− 18 m²/V², which decreased with Zr concentration. Optical loss was estimated from scattering and absorption, and the absorption coefficient dropped with increasing Zr content at near band gap. The obtained results provide information for the design of BZT thin film-based optical devices.     

Structural, electrical and optical properties of Bi2Se3 and Bi2Se(3−x)Tex thin films

Thin films of Bi₂Se₃, Bi₂Se_2.9Te_0.1, Bi₂Se_2.7Te_0.3 and Bi₂Se_2.6Te_0.4 are prepared by compound evaporation. Micro structural, optical and electrical measurements are carried out on these films. X-ray diffraction pattern indicates that the as-prepared films are polycrystalline in nature with exact matching of standard pattern. The composition and morphology are determined using energy dispersive X-ray analysis and scanning electron microscopy (SEM). The optical band gap, which is direct allowed, is 0.67 eV for Bi₂Se₃ thin films and the activation energy is 53 meV. Tellurium doped thin films also show strong optical absorption corresponding to a band gap of 0.70-0.78 eV. Absolute value of electrical conductivity in the case of tellurium doped thin film shows a decreasing trend with respect to parent structure.     

Influence of laser-irradiation on the optical constants Se75S25 − xCdx thin films

Amorphous thin films of glassy alloys of Se₇₅S_25 − xCd_x (x = 2, 4 and 6) were prepared by thermal evaporation onto chemically cleaned glass substrates. Optical absorption and reflection measurements were carried out on as-deposited and laser-irradiated thin films in the wavelength region of 500-1000 nm. Analysis of the optical absorption data shows that the rule of no-direct transitions predominates. The laser-irradiated Se₇₅S_25 − xCd_x films showed an increase in the optical band gap and absorption coefficient with increasing the time of laser-irradiation. The results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The value of refractive index increases decreases with increasing photon energy and also by increasing the time of laser-irradiation. With the large absorption coefficient and change in the optical band gap and refractive index by the influence of laser-irradiation, these materials may be suitable for optical disc application.     

Spectroscopic ellipsometry studies on the optical constants of Bi4Ti3O12:xNa thin films grown by metal-organic chemical vapor deposition

We have deposited undoped and Na-doped epitaxial Bi₄Ti₃O₁₂ thin films on SrTiO₃(001) substrates using the liquid-delivery spin metal-organic chemical vapor deposition technique. High resolution x-ray diffraction and Raman spectroscopy measurements were employed to investigate the structural perfection and incorporation of Na ions into the film. The ellipsometric measurements were carried out in the energy range 1.49-2.75 eV and the corresponding experimental data were fitted. Two different dispersion relations, Cauchy's absorbent and Tauc-Lorentz, have been used to determine the optical constants of the films. It is observed that there is a decrease in optical band gap for increasing sodium content. Furthermore, it has been found that the refractive index and extinction coefficient also depend on the sodium content. The refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model, from which the dispersion parameters were determined. The optical constants tend to decrease with increasing doping content.     

Temperature effects on the optoelectronic properties of AgIn5S8 thin films

Polycrystalline AgIn₅S₈ thin films are obtained by the thermal evaporation of AgIn₅S₈ crystals onto ultrasonically cleaned glass substrates under a pressure of ~ 1.3 × 10⁻³ Pa. The temperature dependence of the optical band gap and photoconductivity of these films was studied in the temperature regions of 300-450 K and 40-300 K, respectively. The heat treatment effect at annealing temperatures of 350, 450 and 550 K on the temperature dependent photoconductivity is also investigated. The absorption coefficient, which was studied in the incidence photon energy range of 1.65-2.55 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge which corresponds to a direct allowed transition energy band gap of 1.78 eV exhibited a temperature coefficient of −3.56 × 10⁻⁴ eV/K. The 0 K energy band gap is estimated as 1.89 eV. AgIn₅S₈ films are observed to be photoconductive. The highest and most stable temperature invariant photocurrent was obtained at an annealing temperature of 550 K. The photoconductivity kinetics was attributed to the structural modifications caused by annealing and due to the trapping-recombination centers' exchange.     

Optical characterization of vacuum evaporated a-Se80Te20−xCux thin films

Thin films of a-Se₈₀Te_20−xCu_x (where x=2, 6, 8 and 10) were deposited on glass substrates by vacuum evaporation technique. The absorbance, reflectance and transmittance of as-deposited thin films were measured in the wavelength region 400-1000 nm. The optical band gap and optical constants of amorphous thin films have been studied as a function of photon energy. The optical band gap increases on incorporation of copper in Se₈₀Te_20−xCu_x system. The value of refractive index (n) decreases while the value of the extinction coefficient (k) increases with increasing photon energy. The results are interpreted in terms of concentration of localized states.     

Formation and properties of AgInSe2 thin films by co-evaporation

The electrical and optical properties of silver indium selenide thin films prepared by co-evaporation have been studied. X-ray diffraction indicates that the as prepared films were polycrystalline in nature. The lattice parameters were calculated to be a=0.6137 and b=1.1816 nm. Composition was determined from energy dispersive analysis of X-ray. Silver indium selenide thin films were also prepared by bulk evaporation of powdered sample for comparative study. They have an optical band gap (E_g) of 1.25 eV and it is a direct allowed transition. Refractive index (n) and extinction coefficient (k) were calculated from absorption and reflection spectra. Steady-state photoconductivity was measured from 300 to 400 K. Carrier lifetime was calculated from transient photoconductivity measurements at room temperature at different intensities of illumination.     

Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films

Yttrium oxide (Y₂O₃) thin films were grown onto Si(1 0 0) substrates using reactive magnetron sputter-deposition at temperatures ranging from room temperature (RT) to 500 °C. The effect of growth temperature (T_s) on the growth behavior, microstructure and optical properties of Y₂O₃ films was investigated. The structural studies employing reflection high-energy electron diffraction RHEED indicate that the films grown at room temperature (RT) are amorphous while the films grown at T_s = 300-500 °C are nanocrystalline and crystallize in cubic structure. Grain-size (L) increases from ∼15 to 40 nm with increasing T_s. Spectroscopic ellipsometry measurements indicate that the size-effects and ultra-microstructure were significant on the optical constants and their dispersion profiles of Y₂O₃ films. A significant enhancement in the index of refraction (n) (from 2.03 to 2.25) is observed in well-defined Y₂O₃ nanocrystalline films compared to that of amorphous Y₂O₃. The observed changes in the optical constants were explained on the basis of increased packing density and crystallinity of the films with increasing T_s. The spectrophotometry analysis indicates the direct nature of the band gap (E_g) in Y₂O₃ films. E_g values vary in the range of 5.91-6.15 eV for Y₂O₃ films grown in the range of RT-500 °C, where the lower E_g values for films grown at lower temperature is attributed to incomplete oxidation and formation of chemical defects. A direct, linear relationship between microstructure and optical parameters found for Y₂O₃ films suggest that tuning optical properties for desired applications can be achieved by controlling the size and structure at the nanoscale dimensions.     

Composition dependence of optical constants in ferroelectric Ba(Ti1 − x,Nix)O3 thin films by optical transmittance technique

Ba(Ti_1 − x,Ni_x)O₃ ferroelectric thin films with perovskite structure are prepared on fused quartz substrates by a sol-gel process. Optical transmittance measurements indicate that Ni-doping has an obvious effect on the energy band structure of BaTiO₃. It has been found that the refractive index n, extinction coefficient k, and band gap energy E_g of the films are functions of the film composition. The E_g of Ba(Ti_1 − x,Ni_x)O₃ decreases approximately linearly as the Ni content increases, which is attributed to the decline of conduction band energy level with increasing the Ni content. On the other hand, n and k both increase linearly with increasing the Ni content because of the increase of packing density. These results indicate that thin films might have potential applications in BaTiO₃-based thin-film optical devices.     

The dielectric functions and optical band gaps of thin films of amorphous and cubic crystalline Mg~ 2NiH~ 4

Magnesium nickel hydride films have earlier been suggested for several optoelectronic applications, but the optical properties and band gap have not been firmly established. In this work, the dielectric functions and the optical band gaps of thin films of Mg₂NiH₄ have been determined experimentally from optical modeling using spectroscopic ellipsometry and spectrophotometry in the photon energy range between 0.7 and 4.2 eV. Samples were prepared by reactive sputtering, resulting in a single-layer geometry that could easily be studied by ellipsometry. Crystalline samples were prepared by annealing the as-deposited amorphous films ex-situ. The resulting films remained in the high temperature cubic Mg₂NiH₄ structure even after cooling to room temperature. Tauc analysis of the dielectric functions shows that Mg₂NiH₄ films exhibit a band gap of 1.6 eV for the amorphous structure and 2.1 eV for the cubic crystalline structure.     

The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films

CuInSe₂ (CIS) thin films were prepared by ion beam sputtering deposition of copper layer, indium layer and selenium layer on BK7 glass substrates followed by annealing at different temperatures for 1 h in the same vacuum chamber. The influence of annealing temperature (100-400 °C) on the structural, optical and electrical properties of CIS thin films was investigated. X-ray diffraction (XRD) analysis revealed that CIS thin films exhibit chalcopyrite phase and preferential (112) orientation when the annealing temperature is over 300 °C. Both XRD and Raman show that the crystalline quality of CIS thin film and the grain size increase with increasing annealing temperature. The reduction of the stoichiometry deviation during the deposition of CIS thin films is achieved and the elemental composition of Cu, In and Se in the sample annealed at 400 °C is very near to the stoichiometric ratio of 1:1:2. This sample also has an optical energy band gap of about 1.05 eV, a high absorption coefficient of 10⁵ cm⁻¹ and a resistivity of about 0.01 Ω cm.     

Nanocomposite thin films of Ga5Sb10Ge25Se60 chalcogenide glass for optical limiting applications

We report a low-cost, scalable method to fabricate optical grade composite thin films for nonlinear optical applications. The transmission and reflection spectra of prepared Ga₅Sb₁₀Ge₂₅Se₆₀/PVA composite films were investigated. Optical band gap of the thin films were calculated using Tauc’s extrapolation method. The band gap of the nanocomposite thin films were found to be tunable depending on the grain size of the films. Nonlinear optical characterization of samples were studied by the Z-scan technique using an Nd:YAG laser (532 nm, 7 ns, 10 Hz). Sequential Z-scan traces were made in four regimes of intensity for films with three different grain sizes. The Z-scan spectra reveal a strong nonlinear absorption depending on the grain size of the films suggesting that the new materials are promising candidates for the development of nonlinear optical devices and are extremely perspective as optical limiters of intense short pulse radiation.     

Optical and electrical properties of Te-substituted Sn-Sb-Se semiconducting thin films

Thin films of Sn₁₀Sb₂₀Se_70-XTe_X (0 ≤ X ≤ 14) composition were deposited using thermal evaporation technique. As-prepared films were amorphous as studied by X-ray diffraction. Surface morphology studies revealed that films have surface roughness ~ 2 nm and av. grain size ~ 30 nm. Optical band gap E_g showed a sharp decrease for initial substitution of Se with Te upto 2 at.%. A broad hump in the optical band gap is observed for further substitution of Se with Te. The trend of optical band gap variation with tellurium content has been qualitatively explained using band model given by Kastner. The dc-conductivity measurements showed thermally activated conduction with single activation energy for the measured temperature regime and followed Meyer-Neldel rule. The dc-activation energy has nearly half the value as that of optical band gap that revealed the intrinsic nature of semiconductor. The annealing below glass transition T_g led to decrease in optical band gap as well as dc-activation energy that might be related to increase of disorder in material with annealing.     

Ellipsometric studies on cupric telluride thin films

The optical properties of cupric telluride (CuTe) thin films have been studied in the wavelength range 310-800 nm using spectroscopic ellipsometry (SE). Thin films of thickness between 30 and 150 nm were prepared by thermal evaporation at the rate of 15.6 Å/s on well cleaned glass substrates kept at 300 K under the vacuum better than 2×10⁻⁵ mbar. It has been found that the optical band gap increases with the thickness of the films. The refractive index of the films increases with the energy but the extinction coefficient first increases and then decreases gradually with energy. The analysis of the absorption coefficient determined from the extinction coefficient reveals that there is allowed direct transition with a band gap of about 1.5 eV. The increase in the band gap with the increase in the film thickness has been ascribed to defect levels in the band gap formed by defects in the films.