进电端放电法对单晶硅电火花加工接触电阻的影响研究

为改善高电阻率硅的电火花线切割可加工性,提出了一种在半导体电镀金属薄膜表面放电的方法（简称进电端放电法）。首先在硅(电阻率为2.1Ω·cm)表面电镀一层铜膜,然后利用铜刷作电极,在铜膜表面进行放电,利用放电形成的高温在硅表面形成重掺杂层,以降低接触势垒。分析了表面重掺杂层的形成机理,制备了硅试件并得到了伏安曲线,结果表明,试件的进电端接触电阻明显减小。最后采用进电端放电法对电阻率为2.1Ω·cm、直径为100mm的硅锭进行电火花线切割试验,加工效率可由12mm2/min提高至30mm2/min。     

Some aspects of atom probe specimen preparation and analysis of thin film materials

Some of the factors in the preparation of atom probe specimens of metallic multilayer thin films have been investigated. A series of Ti/Nb multilayer films were sputtered deposited on n-doped Si [001] substrates with either 5 or 0.05Omega cm resistivity. Each wafer was pre-fabricated into a series of 5 microm x 5 microm x approximately 80 microm island posts by photolithography and reactive ion etching. Once the film was grown on the wafer, a Si post was mounted to either a tungsten or stainless steel fine tip needle that was mechanically crimped to a Cu tube for handling. The specimen was then loaded into a Focus Ion Beam instrument where a sacrificial Pt cap was in situ deposited onto the surface of the film and subsequently annularly ion milled into the appropriate geometry. The Pt cap was found to be an effective method in reducing Ga ion damage and implantation into the film during milling. The multilayers deposited on the high resistivity Si exhibited uncontrolled field evaporation which lead to high mass tails in the mass spectra, a reduction in the mass resolution, high background noise, propensity for "flash-failure", and a variation in the apparent layer thickness as the experiment elapsed in time. The multilayers deposited on lower resistivity Si did not suffer from these artifacts.     

Galerkin boundary element method for the forward problem of ERT

Electrical resistance tomography (ERT) is a novel non-intrusive method that determines the cross-sectional electric conductivity distribution. Currently, the ERT forward problem solvers are mainly based on a finite element method, which require a large number of mesh elements. A Galerkin boundary element method (GBEM) is presented for the ERT forward problem in both 2D and 3D. The complete electrode model is adopted. The contact resistivity of electrodes is measured by rectangular cells of different lengths, as well as the conductivity of the background medium. GBEM formulations solving the multi-domain problems are derived. Numerical results show that the method has a better performance on precision compared by both the finite element method and the collocation boundary element method.     

Studies on thin film based flexible gold electrode arrays for resistivity imaging in electrical impedance tomography

Practical phantoms are essential to assess the electrical impedance tomography (EIT) systems for their validation, calibration and comparison purposes. Metal surface electrodes are generally used in practical phantoms which reduce the SNR of the boundary data due to their design and development errors. Novel flexible and biocompatible gold electrode arrays of high geometric precision are proposed to improve the boundary data quality in EIT. The flexible gold electrode arrays are developed on flexible FR4 sheets using thin film technology and practical gold electrode phantoms are developed with different configurations. Injecting a constant current to the phantom boundary the surface potentials are measured by a LabVIEW based data acquisition system and the resistivity images are reconstructed in EIDORS. Boundary data profile and the resistivity images obtained from the gold electrode phantoms are compared with identical phantoms developed with stainless steel electrodes. Surface profilometry, microscopy and the impedance spectroscopy show that the gold electrode arrays are smooth, geometrically precised and less resistive. Results show that the boundary data accuracy and image quality are improved with gold electrode arrays. Results show that the diametric resistivity plot (DRP), contrast to noise ratio (CNR), percentage of contrast recovery (PCR) and coefficient of contrast (COC) of reconstructed images are improved in gold electrode phantoms.     

一些硫属化合物非晶材料相变温度的测定

本文研究了一些硫属化合物非晶半导体薄膜的表面电阻随热处理温度的变化.有些薄膜加热到一定温度时表面电阻发生突降.一般降低4个数量级左右.表面电阻是否发生突降以及发生突降的温度随薄膜成分和制备方式不同而变.X射线衍射和透射电镜分析结果表明.薄膜在表面电阻突降温度发生了非晶态的相转变.此时温度称为相变温度.发生相变前后薄膜的反射率也发生较大变化.说明这些薄膜材料可作为光存储介质使用.     

Combinatorial measurements of Hall effect and resistivity in oxide films

A system for the simultaneous measurement of the Hall effect in 31 different locations as well as the measurement of the resistivity in 30 different locations on a single oxide thin film grown with a composition gradient is described. Considerations for designing and operating a high-throughput system for characterizing highly conductive oxides with Hall coefficients as small as 10(-10) m3/C are discussed. Results from measurements on films grown using combinatorial molecular beam epitaxy show the usefulness of characterizing combinatorial libraries via both the resistivity and the Hall effect.     

Characterization of the Capacitance of a Rotating Ring–Disk Electrode

The use of rotating ring–disk electrodes as generator-collector systems has so far been limited to the detection of Faradaic currents at the ring. As opposed to other generator-collector configurations, non-Faradaic detection has not yet been carried out with rotating ring–disk electrodes. In this study, a.c. perturbation based detection for measurement of the ring impedance is introduced. By using a conducting polymer-modified disk electrode in combination with a bare gold ring as a model, it is shown that the measured ring capacitance correlates with the polarization of the polymer film, most probably due to counter-ion exchange. A method of calculating the ring capacitance based on a small-signal sinusoid perturbation is described and the most important instrumental limitations are identified.     

还原再氧化工艺下BaTiO3基PTCR元件的密度与其电性能

通过固相法制备出正温度系数热敏电阻(PTCR)传感器,并且通过烧结过程控制瓷体密度.还原气氛中烧结的瓷片的电阻率随着密度的升高呈现逐渐降低的趋势,而再氧化后的瓷片的PTC效应随着密度的升高也呈现逐渐降低的趋势.含有内电极的电阻元件,相对于不合内电极的瓷片,电阻率有所升高,PTC效应有所降低,且密度越低,含有内电极的件相对于不合内电极的瓷片的电性能变化更明显.相对密度在75％～ 83％之间的瓷片,在空气中650℃再氧化1h后,其电阻率为60 ～120 Ω·cm,PTC效应为2.0～2.3个数量级,同一条件下的含有单对Ni电极的元件,其电阻率在200Ω·cm以下,PTC效应可达1.5个数量级.     

On the design of capacitive sensors using flexible electrodes for multipurpose measurements

This article evaluates the potential of capacitive measurements using flexible electrodes to access various physical quantities. These electrodes are made of a thin metallic film, typical thickness 0.2 microm, evaporated on a plastic substrate. Their large flexibility enables them to be mounted in complex geometries such as curved surfaces. In the configuration of planar condensers, using a very sensitive commercial capacitive bridge and a three-terminal measurement method, several measurements are presented. A relative resolution of 10(-8) for the thermal expansion of samples is obtained at low temperature in a differential configuration. The same technique adopted for pressure gauge measurements at low temperature led to a typical 0.1 Pa resolution over a dynamic range of 10(4) Pa. In the configuration of interleaved electrodes, condensers have been used to measure wetting by either bulk liquid helium or by thin continuous helium films in a cylindrical pipe. Both experimental and numerical evidence is provided, showing that the close proximity of a reference ground potential significantly increases the relative sensitivity to fluid wetting. Further, interleaved electrodes can be used to access both the area that is covered by a liquid film but also to determine the thickness of this film, provided it is comparable to the periodicity of the electrode pattern.     

Novel structure of a sidewall-insulated hollow electrode for micro electrochemical machining

Adopting the sidewall-insulated hollow electrode (SIHE) is an ideal approach to achieve electrolyte-refresh and stray corrosion inhibition functions in micro electrochemical machining (ECM) processes. Most of the traditional SIHEs are made of metal substrate and non-metal thin films. The insulating film has poor durability, and the preparation approach of the traditional SIHE is complex and has limited repeatability. This research presents a novel structure of a SIHE with an insulated substrate and an internal conductive film. The machining performance of the novel SIHE is primarily verified by a potential distribution analysis in the numerical simulation. According to the concept of the novel SIHE, a silver-plated glass tube electrode (SPGTE) is presented: the glass tube acts as the insulated substrate, and the plated silver layer acts as the working cathode. Then, a fabrication process for the SPGTE is proposed. Silver layers are tightly bonded on the glass tube surface by electroless plating. The thickness of the silver layer is approximately 3.5 μm, and its electrical resistivity is approximately 5 × 10−5 Ω cm. In micro ECM experiments, microstructures with steep sidewalls with taper angles of <5° are machined, which is attributed to the stray corrosion inhibition of the insulated substrate. Micro holes with an aspect ratio of approximately 3 are machined. There is no accumulation of electrolytic products and short circuits, which verifies the excellent electrolyte-fresh performance. Compared with the traditional SIHEs, the novel SIHE could provide a simpler and more reliable way of fabricating sidewall-insulated electrodes. The proposed electrode structure can further inspire new electrode preparation schemes based on new substrate materials and film preparation approaches.     

Analysis of the current-density distribution from a tapered, gelled-pad external cardiac pacing electrode

We have designed a high-impedance (5000 omega-cm), tapered, gelled-pad, external cardiac pacing electrode that limits the migration of charges to the perimeter of a circular electrode and produces a more uniform current-density distribution than external cardiac pacing electrodes in clinical use. A computer simulation was developed that uses cylindrical coordinates to analyze the current-density distribution at the interface between the electrode and human tissue. Our computer simulation analyzed 32 different electrodes, and the results showed that the gelled-pad thickness, the gelled-pad taper, and the radius of the conducting disk were not significant parameters in determining the current-density distributions for low-resistivity electrodes. Those parameters were, however, significant for high-resistivity electrodes. We defined the optimum resistivity as that at which the tapered, gelled-pad electrode produces the most uniform current-density distribution and delivers the most current to human tissue. When evaluating electrodes at the optimum resistivity, we determined that the peak current density of the tapered, gelled-pad electrode was 50% lower than that of the clinically available electrodes, while delivering 58% more current to the human tissue.     

伽伐尼电池式气敏元件的研制

本文报导用高频溅射的方法在聚四氟乙烯薄膜上淀积的铂膜，用电解法再制成铂黑膜。以硫酸为电解液，以铂黑膜和铂片为电极组成伽伐尼电池式气敏元件，对H2和CO具有较高的灵敏度和良好的选择性。     

CVD金刚石薄膜的掺硼研究

采用固体三氧化二硼，在单晶硅（100）衬底上用微波CVD法生长金刚石薄膜和进行p型掺杂，对不同掺杂碳源浓度下CVD金刚石薄膜的掺杂和生长行为、薄膜表面形貌、薄膜的电性能等进行了研究。结果表明，硼确实已掺入金刚石膜中；在SEM下观察到硼掺杂金刚石膜结构致密没有孔洞；用Ti和Ag分别在掺杂金刚石薄膜表面制备电极，测试了在不同温度下电流随温度的变化。     

进电方式对高阻半导体硅放电加工影响研究

进行了高阻半导体硅的放电铣削加工实验,通过检测脉冲放电电压和电流波形,对固定、旋转、随动三种进电方式下的加工情况进行了对比。结果表明：固定进电方式下,由于进电点会逐步生成不导电的钝化膜,接触电阻不断增大,回路中的总电阻不断增大,放电峰值电流逐步减小,最终导致无法加工;旋转进电方式下,由于进电电极与加工区域距离增大,导致放电回路中的体电阻不断增大,放电峰值电流也会逐步减小;随动进电方式下,放电回路中进电电极会不断刮除产生的钝化膜且极间距离维持不变,因此接触电阻和体电阻能保持始终稳定,放电加工稳定性较好。
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Nanographite analyzer of laser polarization

An optical analyzer of laser polarization has been designed and manufactured. The principle of operation of this analyzer is based on the recording of the polarization-dependent surface photocurrents in nanographite films. The analyzer does not contain additional optical elements and consists of a cylindrical bushing with a gauge of its angular position, a nanographite film grown on a silicon substrate, two parallel measurement electrodes placed on the film surface, and an electrical measuring instrument. The nanographite film is placed on the bushing obliquely so that the measuring electrodes are parallel to the axial cross section of the bushing, which is oriented perpendicular to the film tilt plane. The analyzer can operate in the wavelength range from 266 to 4000 nm.     

Ni80Cr20合金薄膜制备影响因素的试验研究

利用直流磁控溅射的方法制备Ni80Cr20合金薄膜,以氩气流量、氩气工作压强、溅射功率作为三因素进行正交试验,在溅射时间相同的条件下分别测试了薄膜厚度、表面粗糙度、电阻率并进行了极差分析。分析结果表明:在一定范围内,氩气工作压强与溅射功率对薄膜厚度的影响较大;在氩气工作压强为3.0Pa时,薄膜厚度与溅射功率近似成正比关系;随着氩气流量的增大,Ni80Cr20薄膜厚度呈现先增大后减小的趋势;在氩气流量为50cm~3/min时,薄膜厚度达到最大值;各因素对薄膜表面粗糙度及电阻率影响不明显。     

ITO透明导电膜高速成膜的研发

论述了一种采用低能量大束流高密度等离子体作为离子辅助沉积技术、沉积ＩＴＯ薄膜的方法。实验结果表明离子轰击可以有效地增加薄膜的聚集密度,同时减低薄膜的电阻率。此外,高密度等离子体促进了ＩＴＯ薄膜制备过程的氧化,进而大大提高了ＩＴＯ薄膜的沉积速度。     

Study on the c-axis preferred orientation of ZnO film on various metal electrodes

ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.     

Ultra-flat coplanar electrodes for controlled electrical contact of molecular films

Reliable measurement of electrical charge transport in molecular layers is a delicate task that requires establishing contacts with electrodes without perturbing the molecular structure of the film. We show how this can be achieved by means of novel device consisting of ultra-flat electrodes separated by insulating material to support the molecular film. We show the fabrication process of these electrodes using a replica technique where gold electrodes are embedded in a silicon oxide film deposited on the angstrom-level flat surface of a silicon wafer. Importantly, the co-planarity of the electrode and oxide areas of the substrate was in the sub-nanometer range. We illustrate the capabilities of the system by mapping the distribution of electrical transport pathways in molecular thin films of self-assembled oligothiophene derivatives using conductive atomic force microscopy. In comparison with traditional bottom contact non-coplanar electrodes, the films deposited on our electrodes exhibited contact resistances lower by a factor of 40 than that of the similar but non-coplanar electrodes.     

Fabrication of resistance type humidity sensor based on CaCu3Ti4O12 thick film

A resistance type humidity sensor has been fabricated from an assembly of CaCu₃Ti₄O₁₂ thick film, Ag interdigitated electrodes, and an Al₂O₃ ceramic substrate. The humidity sensing properties were measured using the direct current (DC) analysis method. The results show that the electrical properties of the CaCu₃Ti₄O₁₂ thick film are dependent on humidity and applied voltage. At low humidity, the film exhibited low conductivity and behaved as an insulator. However, at high humidity, the conductivity of the film increased due to the enhancement of ion conduction. These outcomes indicate that the measured resistance is highly dependent on the applied bias voltage within the whole humidity range i.e. 20–90% relative humidity (RH) at ambient temperature. The response and recovery times as well as sensitivity were determined to be around 2.8 min, 25 min, and 98.2%, respectively. Therefore, it is concluded that CaCu₃Ti₄O₁₂ thick film has good humidity sensing properties and has high potential in the application for fabrication of high-performance humidity sensors.