Characterization and electrical properties of semiconducting Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-K<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> glasses

Semiconducting glasses of the Fe₂O₃-Bi₂O₃-K₂B₄O₇ system were prepared by the press-quenching method and their dc conductivity in the temperature range 223–393 K was measured. The glass transition temperature values (T_g) of the present glasses were larger than those of tellurite glasses. This indicates a higher thermal stability of the glass in the present system. The density for these glasses was consistent with the ionic size, atomic weight and amount of different elements in the glasses. Mössbauer results revealed that the relative fraction of Fe increases with increasing Fe₂O₃ content. Electrical conductivity showed a similar composition dependency as the fraction of Fe. The glasses had conductivities ranging from 10 to 10 Scm at temperatures from 223 to 393 K. Electrical conduction of the glasses was confirmed to be due to non-adiabatic small polaron hopping and the conduction was primarily determined by hopping carrier mobility.     

Manifestation of Nd ions on the structure,Raman and IR spectra of (TeO<Subscript>2</Subscript>-MoO-Nd<Subscript>2</Subscript>O<Subscript>3</Subscript>) glasses

The structure of [80TeO₂ + (20–x)MoO + xNd₂O₃] glasses, with x = 0, 4, 6, 10 and 12 mol%, is studied in this work. Raman scattering in the spectral range (−2000 to 3500 cm⁻¹) and IR absorption spectra have been measured for crystalline TeO₂ and glasses, and their assignments were discussed and compared. Many vibrational modes were found active in both Raman and IR and their assignments for crystalline TeO₂ and for the glasses were discussed in relation to the tetragonal structure of crystalline α -TeO₂. Nd₂O₃ was found to completely eliminate diffuse scattering and enhance the Raman scattering intensity. Anti-stokes Raman bands in the range −1460 cm^{− 1} to −1975 cm^{− 1} were observed for both (30Li₂O + 70B₂O₃+ xNd₂O₃) glasses and [80TeO₂ + (20−x)MoO + xNd₂O₃] glasses and were attributed to some emission processes due to the doping of the glasses with Nd₂O₃.     

Synthesis and characterization of new glasses based on Li<Subscript>2</Subscript>S-P<Subscript>2</Subscript>S<Subscript>5</Subscript>-Sb<Subscript>2</Subscript>S<Subscript>3</Subscript> system

There is great interest in sulfide glasses because of their high lithium ion conductivity. New sulfide glasses based on Li₂S-P₂S₅-Sb₂S₃ system have been synthesized by a classical quenching technique. A summary of thermal and structural characterization is presented. Electrical conductivities of the samples have been determined by Impedance Spectroscopy. The compositions of low lithium content (below 20% mol) have presented low electronic conductivities close to 10⁻⁸ S/cm at room temperature. The compositions of medium lithium content (30–50% mol) have presented mixed ionic-electronic behavior with predominant on ionic conductivity with a maximum values around 10⁻⁶ S/cm for samples up to 50% Li₂S at room temperature. Arrhenius behavior is verified between 25°C and T_g for all glasses with activation energies about 0.55–0.64 eV. A comparative study of conductivities with glasses belonging to the other chalcogenide systems has been undertaken.     

Dielectric properties of Be(IO<Subscript>3</Subscript>)<Subscript>2</Subscript>⋅4H<Subscript>2</Subscript>O crystals

The article studies the dielectric properties, dc conductivity and ac conductivity of Be(IO₃)₂⋅4H₂O single crystals. The dielectric constant ε has been defined for the three directions of the vectors a, b and c in the crystals in the temperature interval 280–340 K and frequency range 100 Hz–10⁶ Hz. The crystals show strongly expressed anisotropy, at 20 ^∘C and frequency 100 Hz ε_a = 235, ε_b = 30 and ε_c = 85. The frequency dependence of ε is evidence of the presence of low-frequency relaxation polarization in the crystals. The activation energies of the three directions in the crystals have been derived from the temperature dependence of dc conductivity, and they are 1.03 eV, 0.836 eV and 1.2 eV respectively.     

Photoluminescence and Electrical Conductivity of As<Subscript>2</Subscript>S<Subscript>3</Subscript>〈Au〉 and As<Subscript>2</Subscript>S<Subscript>5</Subscript>〈Au〉 Glasses

The 77-K photoluminescence spectra of (As₂S₃)_{100 − x} Au_x and (As₂S₅)_{100 −x} Au_x (0 ≤ x ≤ 0.04) semiconducting glasses are measured for the first time. At low doping levels, the spectra of the (As₂S₅)_{100 − x} Au_x glasses are split into two components, one of which arises from the Au dopant. The temperature-dependent conductivity of the glasses shows two breaks at low Au concentrations and anomalous behavior in the range 300–360 K. Qualitative analysis of the conductivity data suggests that most of the impurity atoms have saturated valence bonds and form solid solutions with host atoms, changing the band gap of the material. A small fraction of the impurity atoms, those having unsaturated valence bonds, produce an electrically active level responsible for impurity conduction.__________Translated from Neorganicheskie Materialy, Vol. 41, No. 7, 2005, pp. 876–880.Original Russian Text Copyright © 2005 by Babaev, Kamilov, Sultanov, Askhabov, Terukov.     

Enhancement in electrical conductivity of Li<Subscript>2</Subscript>O: B<Subscript>2</Subscript>O<Subscript>3</Subscript>: V<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

The study of electrical conductivity of 30Li₂O: (70 − x) B₂O₃: xV₂O₅ glass samples has been carried out. The results have been explained by dividing the temperature range into two regions. In region I, conductivity shows Arrhenius behaviour for all the samples. The conductivity increases with addition of V₂O₅. The results have been explained in the light of Anderson and Stuart Model. In region II, an anomalous enhancement in the conductivity is observed for all the samples up to certain temperature beyond which the conductivity decreases. The enhancement in the conductivity in the annealed glass sample has been attributed to nanocrystallization.     

Ionic conductivity in the Lu<Subscript>2</Subscript>O<Subscript>3</Subscript>-TiO<Subscript>2</Subscript> system

Nanocrystalline Lu₂O₃-TiO₂ (33.3–44 mol % Lu₂O₃) materials with a partially disordered pyrochlore structure, prepared via heat treatment in the range 1400–1750°C, are found to possess high oxygen ionic conductivity. Their 740°C conductivity is 10^-3 to 10^-2 S/cm, depending on the heat-treatment temperature and composition, which is comparable to that of the well-known fluorite solid electrolyte ZrO₂-9 mol % Y₂O₃.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 324–331.Original Russian Text Copyright © 2005 by Shlyakhtina, Mosunov, Stefanovich, Knotko, Karyagina, Shcherbakova.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Electrical properties of Ni<Subscript>0.93</Subscript>Co<Subscript>0.02</Subscript>Mn<Subscript>0.05</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> + BaTiO<Subscript>3</Subscript> ME composites

Polycrystalline samples of mixed composites of Ni_0.93Co_0.02Mn_0.05Fe₂O₄ + BaTiO₃ were prepared by conventional double sintering ceramic method. The phase analysis was carried out by using X-ray diffraction technique. Variation of dc resistivity and thermo emf was studied as a function of temperature. AC conductivity (σ_ac) was investigated in the frequency range 100 Hz–1 MHz. The loss tangent (tan δ) measurements conclude that the conduction mechanism in these samples is due to small polaron hopping. The magnetoelectric conversion factor, i.e. dc(ME) _H was studied as a function of intensity of magnetic field and the maximum value 407 μV/cm/Oe was observed at a field of 0.8 kOe in a composite with 85% BaTiO₃ and 15% Ni_0.93Co_0.02Mn_0.05Fe₂O₄ phase.     

High-temperature phase transition of Tm<Subscript>2</Subscript>Ti<Subscript>2</Subscript>O<Subscript>7</Subscript>

The high-temperature (>1600°C) order—disorder phase transition of Tm₂Ti₂O₇ is shown to be irreversible. The 740°C ionic conductivity of nanocrystalline Tm₂Ti₂O₇ ceramics synthesized at 1670°C is 2 × 10^-3 S/cm and remains unchanged upon heat treatment in air at 860°C for 240 h. The conductivity of the high-temperature (disordered pyrochlore) phase of Tm₂Ti₂O₇ is independent of grain size in the range 20–30 nm.Translated from Neorganicheskie Materialy, Vol. 40, No. 12, 2004, pp. 1495–1500.Original Russian Text Copyright © 2004 by Shlyakhtina, Knotko, Larina, Borichev, Shcherbakova.     

Ionic Conductivity of Ln<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript>Zr<Subscript>2 − <Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>7 − <Emphasis Type="Italic">x</Emphasis>/2</Subscript> (Ln = Sm-Gd) Solid Solutions

The electrical conductivity of Ln_{2 + x} Zr_{2 − x} O_{7 − x/2} (Ln = Sm-Gd) solid solutions prepared from mechanically activated Ln₂O₃ and ZrO₂ is shown to correlate with their structural properties. In the three systems, the x-T regions are determined in which electrical transport is dominated by oxygen-ion conduction. In the Sm₂O₃-ZrO₂ system, ionic conductivities from 5 × 10⁻⁴ to 6 × 10⁻³ S/cm at 740°C are found in Sm_{2 + x} Zr_{2 − x} O_{7 − x/2} with 26.6, 33.3, 35.5, 37, and 40 mol % Sm₂O₃ prepared at 1450, 1530, and 1600°C. Eu_{2 + x} Zr_{2 − x} O_{7 − x/2} and Gd_{2 + x} Zr_{2 − x} O_{7 − x/2} containing 33.3 to 37 mol % Ln₂O₃ have 740°C ionic conductivities of 10⁻³ to ∼7.5 × 10⁻³ and 10⁻³ to 7 × 10⁻³ S/cm, respectively. The activation energy of conduction in Ln_{2 + x} Zr_{2 − x} O_{7 − x/2} (Ln = Sm-Gd), E _a = 0.84–1.04 eV, increases with the atomic number of Ln and x. The highest ionic conductivity is offered by the stoichiometric Ln₂Zr₂O₇ (Ln = Sm-Gd) pyrochlores prepared at 1600°C, owing to the optimal concentration of Ln_Zr + Zr_Ln antistructure pairs (∼5–22%). The grains in the ceramic samples studied range in size from 0.5 to 2 µm.__________Translated from Neorganicheskie Materialy, Vol. 41, No. 8, 2005, pp. 975–984.Original Russian Text Copyright © 2005 by Shlyakhtina, Kolbanev, Knotko, Boguslavskii, Stefanovich, Karyagina, Shcherbakova.     

Preparation and studies of some thermal,mechanical and optical properties of<Emphasis Type="Italic">x</Emphasis>Al<Subscript>2</Subscript>O<Subscript>3</Subscript>(1 −<Emphasis Type="Italic">x</Emphasis>)NaPO<Subscript>3</Subscript> glass system

Sodium aluminophosphate glasses having compositions of xAl₂O₃(1-x)NaPO3 (x = 0.05-0.2) were prepared using conventional melt-quench technique. Density, glass transition temperature, microhardness (MH), thermal expansion coefficient (TEC) and transmission characteristics were measured as a function of alumina content for different samples. They were found to depend on O/P ratio with pronounced changes taking place for O/P ratio ≥3.5. Density, glass transition temperature and microhardness were found to increase up to 15 mol% of alumina and then they showed a decreasing trend. Thermal expansion coefficient decreased continuously with alumina content. Optical gaps for different glass samples as measured from transmission characteristics were found to be in the range 3.13–3.51 eV. It initially decreased with alumina content up to 15 mol% and then increased. The behaviour was explained on the basis of change in the average aluminum coordination number from six Al(6) to four Al(4) (i.e. Al(OP)₆/Al(OP)₄ ratio) along with the changes in polyhedra linkages in the glass network due to change in O/P ratio.     

Electrical conductivity of nanostructured fluorite-like Sc<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>

Single-crystal and polycrystalline samples of Sc₄Ti₃O₁₂ have been shown to contain nanodomains (10–50 nm) with different degrees of ordering, coherent with the fluorite-like matrix. The oxygen-ion conductivity of this compound has been determined in the range 300–1000°C in air using impedance spectroscopy. The nanostructured single-crystal and polycrystalline samples are close in the activation energy for bulk conduction at both low and high temperatures: ?1.26 and 1.29 eV in the range 300–775°C, ?1.98 and 2.07 eV in the range 775–1000°C.     

Low-loss,high-purity (TeO<Subscript>2</Subscript>)<Subscript>0.75</Subscript>(WO<Subscript>3</Subscript>)<Subscript>0.25</Subscript> glass

By melting a mixture of high-purity oxides in a platinum crucible under flowing purified oxygen, we have prepared (TeO₂)_0.75(WO₃)_0.25 glass with a total content of 3d transition metals (Fe, Ni, Co, Cu, Mn, Cr, and V) within 0.4 ppm by weight, a concentration of scattering centers larger than 300 nm in size below 10² cm⁻³, and an absorption coefficient for OH groups (λ ∼ 3 μm) of 0.008 cm⁻¹. The absorption loss in the glass has been determined to be 115 dB/km at λ = 1.06 μm, 86 dB/km at λ = 1.56 μm, and 100 dB/km at λ = 1.97 μm. From reported specific absorptions of impurities in fluorozirconate glasses and the impurity composition of the glass studied here, the absorption loss at λ ∼ 2 μm has been estimated at ≤100 dB/km. The glass has been drawn into a glass-polymer fiber, and the optical loss spectrum of the fiber has been measured.     

Dielectric and a.c. conductivity studies in pure and manganese doped layered K<Subscript>2</Subscript>Ti<Subscript>4</Subscript>O<Subscript>9</Subscript> ceramics

The results of a.c. electrical conductivity studies have been reported on pure K₂Ti₄O₉ (named PT) and its 1.0 molar percentage of MnO₂ doped derivative (named MPT) ceramics in the temperature range 373–898 K. Four regions have been identified in the log(σ_a.c. T) versus 1000/T plots. Conduction in the lowest temperature region I is attributed to the mixed exchangeable interlayer ionic and electronic hopping (polaron) conduction. A dielectric loss peak with distribution of relaxation times perturbs the conduction in next regions II and III. However, in region III for both the samples non-relaxor ferroelectric property may be proposed. The modified interlayer ionic conduction has been proposed towards the higher temperature region IV. Loss tangent (tan δ) versus frequency and dielectric constant (ε) versus frequency plots at different temperatures have also been given for both the samples. The results of tan δ versus temperature and ε versus temperature at different frequencies have further been reported for both of the above compounds in this paper.     

Structural,optical, and opto-dielectric properties of W-doped Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films

A layer-by-layer deposition technique of Ga₂O₃ and WO₃ by vacuum evaporation method on glass and silicon substrates and subsequent annealing in oxygen atmosphere to form W-doped Ga₂O₃ (or Ga₂O₃:W) films was attempted here. The W doping level was measured by the energy dispersive X-ray fluorescence radiographic analysis. The crystalline structure of Ga₂O₃:W films was determined by the X-ray diffraction method. Experimental data indicate that W⁶⁺ ions doped in host Ga₂O₃ forming solid solutions (SS), in which the molar ratio (r) of W to Ga is 9.6, 13.4, 18.2, 22.7 and 30.4%. All the prepared SS have the known β-Ga₂O₃ crystalline structure. This doping controls the optical and electrical properties of the host Ga₂O₃. The optical properties of the prepared Ga₂O₃:W films were studied by UV–VIS–NIR absorption spectroscopy method from which the bandgap was determined. In general, it was found that the prepared Ga₂O₃:W films are wide-bandgap semiconductors with bandgap 4.69–4.47 eV and have dielectric properties. The optical sensitivity of the capacitance, dissipation factor and ac-conductance of the Ga₂O₃:W films grown on Si was studied as a function of W-doping level. It was observed that the prepared Ga₂O₃:W film of r = 22.7% has the highest photosensitivity amongst the other samples.     

Preparation of magnetic composites through SrO-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript> glass crystallization

Glasses with nominal compositions 11SrO · 5.5Fe₂O₃ · 4.5Al₂O₃ · 4B₂O₃ (1) and 15SrO · 5.5Fe₂O₃ · 4.5Al₂O₃ · 4B₂O₃ (2) were prepared by rapidly quenching oxide melts between counterrotating steel rollers. The glasses were then heat-treated in the range 650–950°C to produce glass-ceramic samples. The samples were characterized by X-ray diffraction, electron microscopy, and magnetic measurements. The phase composition of the glass-ceramics was determined, and their microstructure and magnetic properties were studied. The annealing temperature was shown to have a strong effect on the coercivity of the materials, which reaches 650 and 570 kA/m for compositions 1 and 2, respectively.     

Electrical conduction and relaxation mechanism in Li<Subscript>2</Subscript>AlZr[PO<Subscript>4</Subscript>]<Subscript>3</Subscript>

Li-ion electrolyte NASICON type Li₂AlZr[PO₄]₃ has been prepared by Solid State Reaction method. Formation of the sample has been confirmed by XRD and TGA–DTA analysis. Electrical conductivity studies have been performed in the frequency range 42 Hz–5 MHz within the temperature range 523–623 K using aluminium as blocking electrodes. The conductivity has been found to be 1 × 10⁻⁵ S cm⁻¹ at 623 K. Dielectric spectra show the decrease in dielectric constant with increase in frequency. Dielectric loss spectra reveal that dc conduction contribution predominates in the sample. Spectroscopic plots of complex modulus suggest the Non-Debye behaviour of the electrical relaxation within the temperature range studied.     

Superionic Conductors in the Bi<Subscript>2</Subscript>WO<Subscript>6</Subscript>-Bi<Subscript>2</Subscript>VO<Subscript>5.5</Subscript> System

Bi₂V_xW_{1 − x} O_{6 − y} ceramics are synthesized, and their structure and electrical properties are studied. The results indicate that the Bi₂WO₆-Bi₂VO_5.5 system contains Bi₂WO₆- and Bi₂VO_5.5-based solid solutions in the ranges 0 < x ≤ 0.2 and 0.75 ≤ x < 1, respectively. Tungsten stabilizes the high-temperature, tetragonal phase γ-Bi₂VO_5.5, which persists down to room temperature at 0.75 ≤ x ≤ 0.84. In the range 350–550°C, the electrical conductivity of the bismuth-vanadate-based solid solutions exceeds that of Bi₂VO_5.5 by about one order of magnitude. The conductivity of the Bi₂WO₆-based solid solutions is also higher than that of the host phase.__________Translated from Neorganicheskie Materialy, Vol. 41, No. 7, 2005, pp. 866–870.Original Russian Text Copyright © 2005 by Voronkova, Yanovskii, Kharitonova, Rudnitskaya.     

Electrical properties of stacked CuInSe<Subscript>2</Subscript> thin films

CuInSe₂ thin films have been prepared by the processing of stacked elemental layer (SEL) on glass substrates followed by annealing in air for different times. Films produced at 300 and 350 ^∘C showed n-type semiconductor due to indium interstitial donors. Electrical properties (resistivity) of the CuInSe₂ films have been systematically studied in terms of annealing temperatures and times. The resistivity was in the interval 10¹–10⁴ Ω cm and influenced by the heating time and decreased with temperature. The activation energy ranged from 0.046 to 0.154 eV in the range 300–600 K. The scattering process due to the energy barriers that exist between adjacent grains was considered.     

Ultrafine Cr-Doped Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Prepared by Detonation Synthesis

Data are presented on the phase composition, particle size distribution, EPR, and luminescence of ultrafine chromium-doped alumina powders prepared by detonation synthesis. The largest particles in the powders are shown to consist mainly of a Cr₂O₃ solid solution in α-Al₂O₃. The luminescence spectrum of fine particles shows, in addition to lines characteristic of ruby, extra lines which are tentatively attributed to Cr³⁺ ions incorporated substitutionally into θ-Al₂O₃.__________Translated from Neorganicheskie Materialy, Vol. 41, No. 8, 2005, pp. 948–954.Original Russian Text Copyright © 2005 by Lyamkina, Chiganova, Slabko, Vorotynov, Taranova.