Design of on-chip 15-18 GHz ultra low noise amplifier

With rapid development communication system, high signal to noise ratio （SNR） system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits （MMICs）. To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier （LNA） was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz-18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide （GaAs） P high electron mobility transistor （P-HEMT） process. The total Current is 15 mA, while the DC power consumption is only 45 mW.     

1.9 GHz low loss varactor diode pre-distorter

Pre-distorters implemented at circuit level using series diodes have a high loss. The method presented here combines source/load second harmonic control with a parallel connected varactor diode. A reduction of 15 dB in the spectral regrowth at 1.9 GHz is achieved with a low loss of 2 dB due to the varactor diode     

1.6 GHz VCO with on-chip inductor and varactor diode

Using the base-emitter junctions of a bipolar transistor as a varicap diode and an on-chip spiral inductor, a fully integrated bipolar LC VCO realised in an industrial bipolar technology is presented     

Reverse biased PIN diode equivalent circuit parameters at microwave frequencies

This paper attempts to fulfill the need for a quantitative analysis of the microwave equivalent steady state circuit parameters of the reverse biased PIN diode as a function of the process variables of the unit. The process variables considered include the effects of small impurity concentrations in the I region and variations in diffusion depth, surface dopant concentration, and I region width at the microwave frequency of 1 Gc/s. Using the Q of the diode as a result of a given design, it is shown that a high Q depends on having a small width, high resistivity I region, along with a shallow diffusion depth. The equivalent circuit parameters are independent of surface dopant concentration to a first approximation.     

Monolithic Schottky-collector resonant tunnel diode oscillatorarrays to 650 GHz

We report monolithic array oscillators incorporating Schottky-collector resonant tunnel diodes (SRTD's). In the SRTD, a 0.1-μm width Schottky collector contact provides a greatly reduced device series resistance, resulting in an estimated 2.2 THz maximum frequency of oscillation. A 64-element oscillator array oscillated at 650 GHz while a 16-element array produced 28 μW at 290 GHz     

2～6GHz单片低噪声放大器

南京电子器件研究所于 2 0 0 1年研制成 WFD0 0 1 5型 2～ 6GHz单片低噪声放大器。该放大器采用南京电子器件研究所 76mm圆片 0 .5μm PHEMT标准工艺制作而成。芯片是由 2个 PHEMT、若干无源元件高度集成的低噪声放大器 ,标准单电源 + 5 V供电 ,输入输出电容隔直 ,使用方便 ,可靠性高 ,一致性好。芯片面积 3.0 mm× 2 .2 mm。达到的技术指标如下 :频率可达 2～ 6GHz,整个带内噪声系数小于 2 .6d B,线性功率增益达 2 5 d B,增益平坦度± 0 .5 d B,输入输出驻波小于 2 .0 ,因其稳定系数大于 1 ,该放大器工作十分稳定2～6GHz单片低…     

2～12GHz GaAs单片行波放大器

报道了一个全平面超宽带ＧａＡｓ单片行波放大器的研究结果。该单片电路的核心部件是四个３００μｍ栅宽的ＭＥＳＦＥＴ，整个电路拓扑结构简单，芯片面积为３．０ｍｍ×１．８ｍｍ。电路经优化设计后在２～１２ＧＨｚ范围内，小信号增益为５±１ｄＢ，输入输出电压驻波比≤１．７５。上述频率范围内输出功率≥１６ｄＢｍ，噪声系数≤８ｄＢ。采用全离子注入、全平面工艺，均匀性、一致性良好。实验结果与设计预计值十分一致。     

2～20GHz分布式单片放大器设计

介绍了一种采用0.15μm GaAs PHEMT工艺设计加工的2～20 GHz宽带单片放大器,为了提高电路的整体增益和带宽,在设计电路时采用两级级联分布式结构。此种电路结构不仅能够增加整体电路的增益和带宽,还可以提高电路的反向隔离,获得更低的噪声系数。利用Agilent ADS仿真设计软件对整体电路的原理图和版图进行仿真优化设计。后期电路在中国电子科技集团公司第十三研究所砷化镓工艺线上加工完成。电路性能指标:在2～20 GHz工作频率范围内,小信号增益>13.5 dB;输入输出回波损耗<-9 dB;噪声系数<4.0 dB;P-1>13 dBm。放大器的工作电压5 V,功耗400 mW,芯片面积为3.00 mm×1.6 mm。     

7～18GHz单片宽带大功率放大器

宽带 Ga AS MMIC功率放大器是雷达及微波宽带测试中的关键部件 ,在有关电子系统和微波通信中得到广泛应用。南京电子器件研究所最近研制成功的 7～ 1 8GHz宽带大功率放大器 ,具有比较优异的性能。该宽带单片功率放大器采用 76mm、0 .5 μmPHEMT MMIC工艺线完成。放大器的拓扑结构采用两级有耗匹配方式 ,双路信号在片内用 Lang桥直接合成 ,体积较小 ,从而实现高增益、大功率。宽频带大信号模型的建立是其中的关键 ,利用微波在片测试系统结合模型提取软件进行非线性模型的提取 ,并利用负载牵引系统对提取的模型进行验证、优化。利用…     

2～6 GHz Power Monolithic Amplifier

WFD0 0 1 2 2～ 6GHz power monolithic amplifier has been developed in Nanjing Electronic DevicesInstitute in 2 0 0 1 .The 76mm 0 .5μm HFET standard technology and Ta N resistor,Ta2 O5capacitor,Si N capacitor have been used to fabricate the wideband MMIC.In the circuit design,lossless reactancematching was used to achieve wideband power matching,and lossy matching was used to realize goodinput return loss.The chip size is2 .9mm× 2 .9mm× 0 .0 8mm.The main electric specifications of …     

Monolithic 2?20 GHz GaAs travelling-wave amplifier

A two-stage monolithic GaAs travelling-wave amplifier operating in the 2?20 GHz frequency range with 12 dB flat gain is reported.     

8～20GHz宽带单片低噪声放大器

介绍了一种8～20 GHz单片低噪声放大器的研制过程。本电路采用两级放大拓扑,自偏置结构。采用串联负反馈技术降低噪声系数和输入驻波比,采用负反馈技术扩展带宽和提高动态范围。电路设计基于Agilent ADS微波设计环境,并进行版图电磁场验证以提高设计的准确率。芯片在0.25μm GaAs PHEMT工艺线上加工制作。测试结果表明,在8～20 GHz频率范围内,增益大于13 dB(正斜率),噪声系数小于3 dB,输入输出驻波比小于2∶1,1 dB压缩输出功率典型值为15 dBm,单电源5 V供电,电流小于90 mA。芯片面积为1.72 mm×1.35 mm。该芯片可广泛应用于各种微波系统。     

A 2-18 GHz low-noise/high-gain amplifier module

The effectiveness of the two-tier matrix amplifier as a very-low-noise device with very high associated gains across multioctave frequency bands is theoretically and experimentally demonstrated. Experimental modules whose topology is based on a computer-optimized design exhibit an average noise figure of F=3.5 dB with an associated average gain of G=17.8 dB across the 2-18 GHz frequency band. These state-of-the-art results were achieved with GaAs MESFETs whose minimum noise figure is F=2.2 dB at 18 GHz and whose gate dimensions are 0.25×200 μm. The design considerations and the test results are discussed in detail     

2～6GHz Monolithic Integrated Low Noise Amplifier

2～6GHz Monolithic Integrated Low Noise Amplifier     

GaInAs/InP large bandwidth (> 2 GHz) PIN detectors

Ga0.47In0.53As/InP heterophotodiodes are demonstrated with a bandwidth greater than 2 GHz, less than 0.5 pF capacitance, and subnanoampere dark current at the operating bias. These photodiodes satisfy criteria for both low noise and high speed in the 1 MHz?2 GHz bit-rate range for optical fibre telecommunications     

1—8GHz超宽带限幅器

南京电子器件研究所业已研制成功WIB47型1－18GHz超宽带限幅器。研制中解决了常规限幅器设计中在宽带要求下无法避免的高端低插损与低端的低限幅电平之间的矛盾。设计中舍弃了常规构成自偏置回路的方法，而采用安装一个NIP限幅管芯与通常PIN限幅管芯并联的方法。在压低低端限幅电平的同时，不需附加任何其它元件即可完成自偏置回路的构成，对整个频段的插损都有贡献，完全达到了设计目的，获得的典型结果见表1。此限幅器的突出优点是：频带宽，插损小，体积小，限幅电平低。1—8GHz超宽带限幅器@钟玮$南京电子器件研究所!210016@丁玉…     

2～18GHz超宽带射频放大器

采用分布电路原理、ＣＡＤ技术和微带电路技术，制作出多倍频程超宽带放大器。其主要技术参数为，ｆ＝２～１８ＧＨｚ，Ｇ＿ｐ≥３０ｄＢ，△Ｇ＿ｐ≤±３ｄＢ，Ｆ＿ｎ≤７ｄＢｍ，Ｐ＿（－１）≥＋１０ｄＢ，ＶＳＷＲ≤２．５：１。     

Novel wideband 2-18 GHz clock extraction circuit for optical transmission systems

A novel circuit technique that provides wideband clock extraction for digital regenerative repeaters is described. The scheme employs a closed loop electronically tuned YIG filter than can be locked to the fundamental or harmonics of the extracted clock.<>     

6～18 GHz GaAs射频前端多功能MMIC

基于GaAs单片微波集成电路(MMIC)工艺设计并制备了一款宽带射频前端多功能电路芯片,其包含功率放大器、限幅低噪声放大器(LNA)和收发开关.功率放大器采用平衡式结构同时选择合适的匹配网络实现宽带匹配;限幅器第一级采用功分结构提高耐功率能力;LNA前三级采用电流复用拓扑结构实现低功耗,最后一级采用自偏置结构增加动态范围;天线端的开关具有较高的功率容量,保证信号经过开关后不会压缩而导致发射支路输出功率不足.测试结果显示,电路在6～ 18 GHz频带内,接收支路噪声系数典型值为3.7 dB,增益约为27 dB,1 dB压缩点输出功率典型值大于7 dBm,功耗约为140 mW,能耐受1W的连续波输入功率;发射支路饱和输出功率大于30 dBm,功率附加效率典型值为26％.     

1-18GHz GaAs单片集成电调衰减器

本文叙述了单片宽带GaAs MESFET电调衰减器的设计和制作.单片微波集成衰减器由3个MESFET按T型连接构成,整个芯片的尺寸为1.02×0.72mm.在1～18GHz范围内,插入损耗为2.0～2.7dB,各衰减状态下的输入和输出电压驻波比≤2.0,最大衰减量达20dB.在9GHz下的1dB插入压缩点功率为300mW.