大容量低阻抗耐高纹波电流片式固体钽电解电容器的进展

介绍了大容量、低阻抗、耐高纹波电流的片式固体钽电解电容器的突出特点, 列举在便携式移动电话、笔记本电脑, 开关电源的ＤＣ／ＤＣ变换器的部分应用实例。这类电容器的应用十分引人关注。     

CAD技术在有机薄膜电容器中的应用

建立了有机薄膜电容器结构设计和热计算的数学模型。编制的金属化有机薄膜电容器的ＣＡＤ软件，对ＣＢＢ６１型聚丙烯薄膜电容器的结构设计和热计算应用表明是实用的。对其他有机材料及结构的电容器的应用正探索中。     

高压电容器应用与选择方法

高压电容器应用与选择方法ＣｏｒｎｅｄＤｕｂｉｌｉｅｒ公司是电容器专业生产厂家，可提供多种类型多种规格的电容器，其生产的高压电容器有５大类，可用于直流或交流电应用场合。１、ＳＣＲＮ型电容器，用于可控硅换向和缓冲器。２、Ｔ型电容器：这是一种直流电容器，它...     

铝电解电容器的工作电解液

本文为提高ＣＤ６０型电容器产品质量，在充分分析ＣＤ６０型电容器失效原因的基础上，而研究的一种新的耐高温、长寿命的工作电解液。     

CSD－1－I－1型单通道彩色电视发射机薄膜电容器应急代换一例

ＣＳＤ－１－Ｉ－１型单通道彩色电视发射机薄膜电容器应急代换一例北京广播器材厂生产的ＣＳＤ－１－Ｉ－１型１ｋＷ单通道彩色电视发射机末级ＦＣ－７３２Ｆ板级隔直电容Ｃ＿６是一种特殊结构的薄膜电容器。使用过程中我们发现，当机器长时间满负荷工作时，此电容器容易...     

CD60型交流电动机用铝电解电容器安全认证

我厂五十年代就生产ＣＤＪ型交流电动机用铝电解电容器（视型号为ＣＤ６０型），是国内最早生产交流电动机用铝电解电容器的工厂，多年来在用户使用中颇有信誉，深受用户的欢迎，为了保障产品使用者的人身安全和财产安全，维护广大用户和消费者的利益，提高我国电子产品的安全质量。扩大电子产品的出口创汇，ＣＤ６０型交流电动机用铝电解电容器列入国家强制性实施安全认证的产品。     

电子镇流器用高压长寿命铝电解电容器

铝电解电容器是节能灯用电子镇流器的关键元件，由于镇流器的工作环境严酷，其电容器最易失效。改进后的ＣＤ１１Ｈ系列电子镇流器用铝电解电容器标准突出了１０５℃下满负荷工作３０００ｈ的高可靠性要求。设计目标放在延长寿命，提高可靠性，减少失效率方面。选用电容器时要注意工作电压、上限工作温度、耐久性。     

VLSI介质材料的研究动态和发展方向

本文阐述了当前在ＣＭＯＳ和ＤＲＡＭ中，栅氧化层、ＩＭＤ、ＤＲＡＭ电容器三个方面所用的低介质常数和高介质常数材料的研究动态以及发展方向。     

DCF型交流圆片瓷介电容器

通过对陶瓷介质、导体浆料、包封料等材料的选择，以及陶瓷介质厚度、被银瓷片留边量的设计，采用干压成型法成型，控制生坯密度为３．６２～３．９０ｇ／ｃｍ３，研制成功了额定电压为ＡＣ２５０Ｖ、ＡＣ４００Ｖ的ＤＣＦ型交流瓷介电容器。该产品已取得ＣＣＥＥ、ＵＬ、ＶＤＥ和ＣＳＡ安全认证。     

LCD模块用电源电路

５１５ＬＣＤ模块用电源电路通常不直接将ＬＣＤ模块组装在设备中（例如，把电压表装在电源中），因为ＬＣＤ模块的电源不能从设备的电源获得（也许被测的是浮动电压）。这种困难可以用这里给出的电路解决，该电路可从现有的直流电源派生出直流电压，并通过电容器隔直流。...     

A novel ZVS DC/DC converter for high power applications

This paper presents a novel zero voltage switch (ZVS) pulse-width modulation (PWM) DC/DC converter for high power, high output voltage applications. By using two active switches in the secondary side of a transformer, the proposed converter achieves not only ZVS of the active switches in the entire load ranges but also soft commutation of the output rectifier diodes. The proposed topology has simple structure and control strategy. Simulation results and experimental results of a 2.8 kW 200 kHz DC/DC converter are presented.     

零电流开关大功率DC/DC双全桥变换器设计

提出了一种基于双全桥结构的单向零电流开关大功率（兆瓦级）DC/DC变换器,该变换器通过采用两个全桥变换器来实现零电流开关,实现了较低的功率损耗和输出滤波电感。为了验证提出的变换器在大功率应用中的有效性,构建了小型样机并在大功率直流电网进行了实际测试。实验证明,相比传统的两种单向大功率全桥变换器,提出变换器所需的滤波电感和半导体器件的功率损耗均较少,分别仅为1.72mH和924.5kW。     

悬浮型高压窄脉冲放大器的研究

悬浮型高压窄脉冲放大器输出的是脉宽100ns、上升/下降沿10ns的高压脉冲,运用其中的DC/DC变换器处于动态悬浮隔离供电状态.为使DC/DC变换器适用于高压瞬态跃变状态,首先要求DC/DC变换器的输入/输出耦合电容的存在不影响高压窄脉冲的质量,其次是输出高压窄脉冲时的高速瞬态跃变不会影响DC/DC变换器的供电稳定性.因此,研究悬浮型高压窄脉冲放大器的驱动方式,就是要着重分析动态运用中的DC/DC变换器的工作状态.     

基于耦合电感高增益Buck-Boost变换器小信号建模

基于耦合电感的高增益变换器在新能源发电和直流微电网中均有良好的应用前景。论文在分析基于耦合电感的高增益升降压(Buck-Boost)变换器工作原理的基础上,采用开关流图法建立变换器的模型,详细推导了变换器的稳态模型和交流小信号模型;电力仿真(PSIM)软件对变换器小信号模型的仿真结果证明论文模型的正确性。论文结果对高增益DC/DC变换器控制回路的设计具有较高的参考价值。     

Single-inductor dual-output (SIDO) DC–DC converters for minimized cross regulation and high efficiency in soc supplying systems

A compact size and high efficiency single-inductor dual-output (SIDO) DC–DC converter is proposed. The proposed SIDO DC–DC converter not only provides dual output sources (one buck and one boost outputs) but also has minimized cross regulation without using any external compensation components. Generally speaking, it is important to minimize the number of components and footprint area in the design of SIDO converters. However, usually large external compensation resistors and capacitors are required to stabilize DC–DC converters. Importantly, our proposed hysteresis mode operation can effectively avoid the oscillation problems that may exist in many SIMO designs. Furthermore, the dynamic dc current level like that in the continuous conduction mode (CCM) operation can make the proposed SIDO DC–DC converter achieve high conversion efficiency at light loads owing to small conduction loss. Experimental results show a high efficiency from 85% at light loads to 94% at heavy loads.     

System integration of high voltage electrostatic MEMS actuators

A system integration for High Voltage (HV) electrostatic MicroElectroMechanical Systems (MEMS) actuators is introduced on a micro-Printed Circuit Board. The system includes a programmable microcontroller, a programmable DC/DC converter, a multi output HV interface and electrostatic MEMS actuators. The system produces high output voltages (10–300 V) and can control a large variety of MEMS capacitive loads (1 to 50 pF) by combining diverse semiconductor technologies. This system proves that technologies, such as low voltage CMOS of different processes, high voltage DMOS and MEMS, can interact, communicate and even be integrated as a System In Package (SIP), providing significant size and cost reductions. The system was programmed to control electrostatic MEMS actuator. The DC/DC converter was made from components of different technologies and two addressable high voltage CMOS interfaces were fabricated with DALSA's 0.8 μm High Voltage process. A prototype of the global system has been built and tested.     

High efficiency InP transferred electron device for high peak power, high mean power pulsed sources in J-band

High efficiency indium transferred electron pulsed diodes have been shown to produce high peak powers simultaneously with moderately high mean power with DC to RF conversion efficiencies up to 22% at upper J-band frequencies. Devices have been combined in four-diode waveguide array circuits to produce powers of 40 W peak, 2 W mean simultaneously, and 64.5 W at lower duty cycle.     

A high precision micropower operational amplifier

An operational amplifier configuration implemented as a true micropower high precision op amp is described. It includes a well controlled and predictable DC biasing network that is insensitive to variations in temperature, supply voltages, and process. Also, it permits single supply operation. Excellent DC precision characteristics, comparable to or better than the very best precision op amps currently available, are realized yet at micropower levels. By simply increasing the biasing currents, a version of this design operates in general purpose applications without any degradation in its high precision characteristics. Thus, the AC performance levels of general purpose op amps are attained at a fraction of supply current. This device is fabricated using a standard bipolar IC process; an ion-implanted JFET is added to simplify biasing.     

Very high tunable inter-digital capacitor using bismuth zinc niobate thin-film dielectrics for microwave applications

A very high tunable inter-digital capacitor (IDC) using the bismuth zinc niobate (BZN) pyrochlore thin-film dielectrics is presented for microwave applications. To increase the tunability of the IDC and reduce DC bias voltage, its electrodes are fully embedded into the tunable BZN dielectrics. At 20 V DC applied, the IDC yields 72 and 75% tunability at 2.4 and 5.8 GHz, respectively.     

THE DESIGN OF THE HIGH SPEED AND HIGH PRECISION LATCHING VOLTAGE COMPARATOR ZJ03

The design of a new type of latching voltage comparator ZJ03 is described.Thecommon voltage comparators consist of multistage DC amplifiers,for which it is difficult to realizehigh speed and high precision.The ZJ03 comparator contains a controlled positive feedbackamplifier.Therefore,it is capable of realizing high speed and high precision.For improving theperformance and producibility,the tolerance extension,design centering and potential adaptingtechniques are used in the design of comparator ZJ03.