精确高效的渐变结构片上螺旋电感的电感值分析技术

与传统的金属线宽和间距固定不变的无源片上螺旋电感相比,线宽和间距由外圈到内圈渐变的新型结构电感能有效提高电感品质因子.这种新结构电感的出现使得Jenei等人提出的闭合电感公式已不再适用于其电感值的计算,而改进的wheeler公式计算误差又较大.针对这种情况,文中提出了一种以圈为单位分圈迭代求自感,用整体平均法计算互感的平面螺旋电感的电感值计算方法.该算法分析值与HFSS仿真值相比,误差小于3%,与样品测量值相比,误差小于4%.因此该算法具有计算速度快、精度高的特点,能用于渐变结构片上螺旋电感的高效设计,并可缩短设计周期.     

金属线宽与间距渐变的片上螺旋电感设计规则研究

在分析片上螺旋电感的磁场分布及射频损耗机制的基础上,研究了电感的金属线宽及线圈间距的变化对电感性能的影响,在大量数值分析基础上提出了金属线宽与间距之和不变,而金属线宽与间距之比从外圈到内圈逐渐减小的渐变型片上螺旋电感,并得到了实验验证,多组样品的测试结果与数值分析结果相吻合,以2.4 GHz频段处为例,在高阻硅衬底上制备的5 nH渐变结构电感的品质因子Q为11,比具有相同外径和电感值的固定金属线宽及间距的传统电感高19.6%.     

金属线宽及线间距渐变的射频螺旋电感

为减少射频螺旋电感的金属导体损耗,提出了一种电感金属线宽及金属间距从外到内逐渐变小的新颖结构.与传统的固定金属线宽和间距的电感相比,该渐变结构电感涡流效应的影响较小,金属导体损耗减小,从而降低其串联电阻,品质因子Q值提高.实验结果确证了所提方法的正确性.对一个高阻硅衬底上6nH电感,优化设计的渐变结构电感Q值在2.46GHz处可达到14.25,比版图面积相同、固定线宽及间距的传统电感高11.3%.因此,在无线通信系统的射频前端,采用这种电感与射频集成电路结合,能获得更好的射频电路性能.     

非均匀金属线宽和线间距射频螺旋电感品质因子的改善

为了提高品质因子Q,本文提出了一种非均匀金属条宽和非均匀条间距的改进电感结构。从外圈到里圈,改进的电感金属线宽按等差数列逐渐减小,金属间距按等比数列增加。因为该渐变结构有效减弱了线圈中心电流拥挤导致的涡流效应,所以改进结构电感的Q因子大幅度提高（幅值高达42.86%）。为了进一步增大Q因子,新型电感同时采用图形化接地保护结构（PGS）与渐变结构。结果显示,在0.5GHz到16GHz的射频频段内,结合两种技术的新型电感的品质因子Q最优,与固定金属线宽和间距的传统电感相比,Q提高了67%;与仅采纳PGS结构的电感相比,Q提高了23%;与仅采用渐变金属结构的电感相比,Q提高了20%。     

金属线宽及线间距渐变的射频螺旋电感

为减少射频螺旋电感的金属导体损耗,提出了一种电感金属线宽及金属间距从外到内逐渐变小的新颖结构.与传统的固定金属线宽和间距的电感相比,该渐变结构电感涡流效应的影响较小,金属导体损耗减小,从而降低其串联电阻,品质因子Q值提高.实验结果确证了所提方法的正确性.对一个高阻硅衬底上6nH电感,优化设计的渐变结构电感Q值在2.46GHz处可达到14.25,比版图面积相同、固定线宽及间距的传统电感高11.3%.因此,在无线通信系统的射频前端,采用这种电感与射频集成电路结合,能获得更好的射频电路性能.     

基于CMOS工艺的高Q值集成电感设计

采用三维全波电磁场模拟软件HFSS作为分析工具,对八边形差分对称结构电感和单端结构电感进行对比研究,提出利用多层金属并联布线、渐变线宽和图案接地屏蔽(PGS)等结构与差分对称结构集成来提高片上电感性能的设计方案.此方案能与标准硅基CMOS工艺兼容.仿真结果表明,该方案能有效提高集成电感的Q值.     

一种基于物理模型与遗传算法的平面螺旋电感的优化技术

针对 CMOS RF平面螺旋电感的物理模型 ,提出了一种使用遗传算法优化电感设计参数的优化技术 .应用这种技术 ,人们无需再通过等 Q值线来求取 Q值最佳的电感设计方案 ,因为等 Q值线的计算代价很高 ,而且一旦工艺条件改变 ,所有的等 Q值线都要重新计算 ,效率很低 .而这里提出的优化技术在计算时并没有将所有的电感版图设计方案都计算一遍 ,因而计算效率大大提高 .计算结果与相应设计方案的测量参数比较 ,只有约 5 %的计算误差 .计算结果与相同条件下的等 Q值线的最佳设计方案比较 ,这种优化技术总能得出与之基本一致的最佳方案 .事实上 ,由于这种优化技术     

超宽带锥形电感特性研究

锥形螺旋电感是一种新型电感,在较宽的频带内有良好的一致性,在毫米波电路和光载无线通信系统（RoF Radio-over-Fiber）中有广泛的应用.本文对锥形螺旋电感感值、螺旋电感长度、直流电阻的计算方法进行了研究,给出了精确计算方法,其中,电感值误差在10.2%以内,直流电阻误差在6.5%以内;对锥形空心螺旋电感微波特性进行研究,提出了一种等效模型,该模型拟合计算结果与实测曲线有较好的一致性,使用该模型给出了螺旋电感宽带特性的详细理论推导,同时利用该模型首次对锥形螺旋电感的宽带特性进行了直观解释;最后,将绕制参数对电感微波性能的影响进行分析,引入单位长度电感量参数α和电感量-频率参数β,可对超宽带锥形电感微波特性进行优化,对某些特性进行快速优化.     

射频集成电路对称型螺旋电感研究

针对片上集成螺旋电感的建模,研究并设计了相关的优化方法。分析了已有电感结构,提出了一种高性能的优化方案,使螺旋电感的品质因数和差分特性都有了显著的提高,为螺旋电感设计中品质因数和电感值的折中提供更大的选择面。该优化设计尤其适合高性能全差分压控振荡器对高性能螺旋电感的需要;优化设计选取典型的单层螺旋电感作为测试对象,工作频率为2.439GHz,芯片面积最大值限定为250μm×250μm,采用ASITIC提供的默认工艺。     

一种基于物理模型与遗传算法的平面螺旋电感的优化技术

针对CMOS RF平面螺旋电感的物理模型,提出了一种使用遗传算法优化电感设计参数的优化技术.应用这种技术,人们无需再通过等Q值线来求取Q值最佳的电感设计方案,因为等Q值线的计算代价很高,而且一旦工艺条件改变,所有的等Q值线都要重新计算,效率很低.而这里提出的优化技术在计算时并没有将所有的电感版图设计方案都计算一遍,因而计算效率大大提高.计算结果与相应设计方案的测量参数比较,只有约5%的计算误差.计算结果与相同条件下的等Q值线的最佳设计方案比较,这种优化技术总能得出与之基本一致的最佳方案.事实上,由于这种优化技术的灵活性,"真正”的最佳设计方案只能由这种优化技术得出,而等Q值线只能得出"相对”最佳的设计方案.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first