纳米电子学

在比较三代电子器件的基础上,说明纳电子器件是电子器件发展的新一代,它的主要特征是单电子行为和显著的量子效应.与真空电子器件、微电子器件相比,纳电子器件在信号加工中的主要特性有:(1)单电子,(2)保有相位,(3)量子电阻(h/e2),(4)量子字节(qubit),(5)普适电导涨落.电子器件的基本元件是具有信号放大能力的三极管,目前纳电子三极管有两种模式:纳米点三极管和碳纳米管三极管.文中重点讨论了构造纳电子三极管中的碳纳米材料的结构和特性.     

纳米电子学

在比较三代电子器件的基础上,说明纳电子器件是电子器件发展的新一代,它的主要特征是单电子行为和显著的量子效应.与真空电子器件、微电子器件相比,纳电子器件在信号加工中的主要特性有:(1)单电子,(2)保有相位,(3)量子电阻(h/e2),(4)量子字节(qubit),(5)普适电导涨落.电子器件的基本元件是具有信号放大能力的三极管,目前纳电子三极管有两种模式:纳米点三极管和碳纳米管三极管.文中重点讨论了构造纳电子三极管中的碳纳米材料的结构和特性.     

纳米电子学

在比较三代电子器件的基础上，说明纳电子器件是电子器件发展的新一代，它的主要特征是单电子行为和显的量子效应，与真空电子器件、微电子器件相比，纳电子器件在信号加工中的主要特性有：(1)单电子，(2)保有相位，(3)量子电阻(h／e^2)，(4)量子字节(qubit)，(5)普适电导涨落．电子器件的基本元件是具有信号放大能力的三极管，目前纳电子三极管有两种模式：纳米点三极管和碳纳米管三极管，中重点讨论了构造纳电子三极管中的碳纳米材料的结构和特性。     

纳米电子/纳米光电子技术

主要介绍纳米技术领域里纳米电子学/纳米光电子学的基本概念、纳米电子学的分类、纳米电子器件、纳米光电子器件、纳米电子学和纳米光电子学的发展模式以及纳米高技术群。     

纳米电子／纳米光电子技术

主要介绍纳米技术领域里纳米电子学／纳米光电子学的基本概念、纳米电子学的分类、纳米电子器件、纳米光电子器件、纳米电子学和纳米光电子学的发展模式以及纳米高技术群。     

半导体器件的发展与固态纳米电子器件研究现状

简要回顾了半导体电子器件由真空电子管到固体晶体管,直至纳米电子器件的发展历程。分别比较了不同的半导体电子器件的材料、理论和所采用的制备技术。在此基础上综述了当前较热门的纳米电子学和固态纳米电子器件,并由纳米器件的分类简单介绍了当前固态纳米电子器件的三个部分,即量子点、谐振隧穿器件和单电子晶体管。最后对半导体器件的发展提出了展望。     

名词术语释义——纳电子学

任何一门科学技术都有一个逐渐的成长过程，并且与它的前一代的同门科学技术既有继承，又有其本质上与之区别的特点。微电子学对于其前一代的传统电子学是如此，纳电子学与微电子学也是如此。纳电子器件是指尺寸为纳米级，但其工作机理有异于MOSFET，且其性能有可能大幅度提高的新型电子器件。当器件的结构和特征尺寸进入纳米范围后的电子器件，简单地可称为纳电子器件。因此，从现在开始，人们也可叫微电子芯片中的微小MOSFET是一种纳电子器件，人们也有因此而称微电子进入了纳电子时代。但是由微电子到纳电子其意义不应该只是器件结…     

有机分子纳米线的合成及其导体性质

分子导线是分子电子学研究的重要内容,是分子电子器件的基础。结合分子导线的电子传导性对获取有机线性分子的方法进行了论述。指出共价合成法具有形貌和电子传递的可控性,但合成及纯化的困难限制了其进一步发展。自组装法尽管存在着结构缺陷,而且目标线性分子的直径和维度也难以控制,但其制备方法简单、灵活,所以是有机分子导线的主要研究方向。对一些研究者以自组装法为基础,通过分子间弱的相互作用、定向原子堆积、配位键等研发出的新的有机线性分子建构方法进行了介绍。目前,有机线性材料尽管在微纳电子器件的应用中很难与无机材料竞争,但其作为无机材料的补充,展示了良好的应用前景。     

百年电子学--纪念真空电子管发明一百周年

电子学的崛起、发展和广泛应用是20世纪最伟大的科学技术领域之一.在电磁波理论和自由电子发展的基础上,1904年出现了第一只真空二极电子管,一般认为这标志着电子学的诞生.电磁波频谱资源的开发和利用是电子学发展的基础和动力.从电磁频谱统一的观点看,光已经象微波一样进入到电子学的领域,成为无线电电子学中不可分割的组成部分.电子学的基本任务是:研究带电粒子流与电磁场相互作用的物理概念和物理过程,以及利用相互作用的不同物理机制实现粒子与场之间能量有效转化的方法和条件.从电子器件的观点看,电子学可分为真空电子学与固态电子学;而从电子运动规律的观点看,现代电子学将处理自由电子,准自由电子和束缚电子的运动规律及其与电磁场的相互作用.1958年,电子学领域出现三个重要发现和发明:集成电路、激光和相对论自由电子的回旋辐射.相应的,半导体电子学(微电子学)、激光电子学和相对论电子学等现代电子学领域则发端于此.电子器件小型化、微型化、功能集成化将电磁频谱的开拓和占领推向光波和红外毫米波.     

从真空微电子学到真空纳电子学

微细加工技术和场发射作为电子源促成了真空微电子学的诞生,许多从事微细加工技术、真空电子技术、微波电子学、材料科学、表面科学、薄膜科学等领域的研究人员也开始了这方面的研究工作,1988年在美国召开了第一届国际真空微电子学会议（IVMC）,随后每年一届在世界各地轮流召开。科学技术的发展非常之快,纳米结构、纳米加工技术、纳米材料等也渗透到这个领域,真空微电子学的研究领域也随之扩展,所以2004年在美国召开的第17届国际真空微电子学会议改名为国际真空纳电子学会议（IVNC）。本文就真空微电子学的发展历史,该领域的技术发展做了综述和分析,对目前真空纳电子学的兴起、研究内容的变化做了分析。     

Reliability challenges in the nanoelectronics era

Microelectronics has pervaded our lives for the past fifty years. The shift from the era of microelectronics, where semiconductor devices were measured in microns to the new era of nanoelectronics where they shrink to dimensions measured in nanometers, will make the semiconductors even more pervasive than it is today. Starting from the vision and background of ENIAC, the European Technology Platform for nanoelectronics, this paper will shortly summarise the Strategic Research Agenda (SRA) of nanoelectronics. Based on this SRA, the challenges for reliability will be discussed, and possible solutions will be suggested.     

纳电子学的发展

进入21世纪,2004年集成电路的特征尺寸已进入90 nm节点,标志着微电子进入一个新的纪元,即进入了纳电子时代。介绍和总结了纳电子的新进展,包括纳电子的两条发展技术路线:其一是继续按自上而下的方法,以CMOS技术为基础,不断改变栅结构,改变沟道材料,增强控制电子的能力;其二是自下而上的新思路,采用新的器件结构,向自组装发展。此外,还介绍了"后CMOS"器件的工作原理、当前的实验以及和MOSFET相关的性能和面临的挑战。并预计了纳电子未来发展的趋势。     

Unraveling the future of computing

In this article we briefly introduce the theory and development of DNA-based computing, present the underlying problems associated with DNA-based computing technology, and discuss the trend of nanoelectronics as well as several computational paradigms for selected existing classical solutions with quantum-effect devices. The pros and cons of both the DNA-based computing and the quantum computing are discussed and compared from the error resistant viewpoint and at the system architecture level     

Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation.     

The Future of Integrated Circuits: A Survey of Nanoelectronics

While most of the electronics industry is dependent on the ever-decreasing size of lithographic transistors, this scaling cannot continue indefinitely. Nanoelectronics (circuits built with components on the scale of 10 nm) seem to be the most promising successor to lithographic based ICs. Molecular-scale devices including diodes, bistable switches, carbon nanotubes, and nanowires have been fabricated and characterized in chemistry labs. Techniques for self-assembling these devices into different architectures have also been demonstrated and used to build small-scale prototypes. While these devices and assembly techniques will lead to nanoscale electronics, they also have the drawback of being prone to defects and transient faults. Fault-tolerance techniques will be crucial to the use of nanoelectronics. Lastly, changes to the software tools that support the fabrication and use of ICs will be needed to extend them to support nanoelectronics. This paper introduces nanoelectronics and reviews the current progress made in research in the areas of technologies, architectures, fault tolerance, and software tools.     

Shell-Isolated Plasmonic Nanostructures for Biosensing,Catalysis, and Advanced Nanoelectronics

Shell-isolated nanostructures, consisting of an inert shell and a plasmonic core, have recently been intensively explored for biosensing, catalysis, and nanoelectronics applications owing to their functional shells and unique plasmonic properties. Such designer shell-isolated plasmonic nanostructures possess the potential to improve the detectability of biosensors and provide powerful platforms to explore in-depth plasmon enhancement principles and finally boost significantly their photo(electro)catalytic efficiency. In addition, such structural optimization and interface nanoengineering promote solid developments of advanced nanoelectronics toward real applications, revealing new electron transport mechanisms and enabling exploration of new functional and integrated optoelectronic devices. In this overview, the state-of-the-art progresses of shell-isolated plasmonic nanostructures (SHIPNSs) in the field of biosensing, photo(electro)catalysis, and nanoelectronics is summarized, focusing on the superiority of the core–shell materials in exploration of biosensing, catalytic enhancement mechanisms, and electron transport principles. A brief overview of synthetic methods is introduced, and then the significant importance of shell-isolated nanomaterials in fabrication and promising direction for future development and challenges are discussed.     

“集成电路概述”通识课程建设探索与实践

根据通识课程开设的目的和基本特征,从教学团队建设、课程内容组织、教学方法与手段、教学资源建设等方面,对“集成电路概述”通识课程建设进行了探索与实践,拓展了学生的知识面,激发了学生学习兴趣、热情和积极主动性,提高了教学实效性,可为相关课程的建设提供参考。     

纳米电子学

纳米电子学是纳米技术的重要科学基础,纳米电子学将成为21世纪信息时代的科学核心,将使未来社会产生重大变革。本文介绍了纳米电子学的基本概念、纳米电子学的产生、纳米电子学的研究内容、纳米器件的基本结构及工作机理、纳米结构的微加工技术、纳米结构的检测与表征、纳米电子学的应用及发展对策。     

Nanoelectronics [quantum electron devices]

The dimensions of semiconductor devices can now be reduced to the point where quantum-mechanical effects must be considered in device performance. New device concepts have therefore been proposed, and already realised, in which quantum-mechanical effects are used to achieve increased electron mobilities or in which interference phenomena are utilised. At present, the major drawbacks of nanoelectronics are the technological problems of realising the devices. The emphasis of the paper is on new technological concepts for device realisation. Additionally, an overview of proposed and realised devices is given. Future advances in nanofabrication may come from the development of the scanning tunnelling microscope and related systems