快速闪烁晶体在未来高能物理实验中的应用

简要综述了快速闪烁晶体在未来高能物理实验中的应用和目前研究进展.在未来高亮度强子对撞机（HL LHC）上通过采用高亮度、快速和高抗辐照强度的LYSO晶体为CMS的量能器升级,可以建成具有良好E/γ能量分辨率的稳定的精密电磁量能器.通过读取PbF2,PbFCl和BSO晶体中的切伦科夫光和闪烁光,可以为未来的轻子对撞机建立具有良好的喷注能量分辨率的均匀强子量能器.有亚纳秒衰变时间的BaF2晶体将为未来的高能物理强度前沿实验建立在速率及时间分辨率提高超过10倍的晶体量热器.对新型快闪烁晶体如PbFCl,YAP:Yb,ZnO:Ga和CuI的研究可能为今后高能物理实验发挥重要作用.     

钨酸铅（PbW04）晶体的研究进展

钨酸铅（PWO）晶体由于其自身特点：高密度（8．28g／cm^3）、短辐射长度（0．87cm）和Moliere半径（2．12cm）、快的闪烁衰减时间（t〈50ns）以及较强的抗辐照损伤能力，已经成为了最具发展潜力的闪烁晶体之一，作为一种良好的闪烁晶体，PWO晶体在高能物理、核医学等领域有着广泛的应用。主要综述了PWO晶...     

纯CsI晶体发光特性

测量了用Stockbager方法生长的纯CsI晶体的光学透射、X射线激发的发射谱、能谱特性和衰减时间特性．该晶体有二个闪烁分量,峰值位于310nm的发光分量是快分量（＜40ns）,450um处的发光分量是慢分量（～2．4μs）．慢分量的发光强度不稳定,并受晶体中缺陷I-空位的影响较大．文中还给出快、慢发光强度比值91．8％．     

Al+MgF2作为真空紫外傅立叶变换光谱仪分束膜之光谱特性研究

根据在研VUV FTS分束器的技术要求 ,进行采用Al MgF2 材料制作紫外 真空紫外波段分束膜的实验研究。理论上通过数据计算分析了膜层选材及设计的可行性 ,制备了Al MgF2 分束膜 ,建立了以Seya Namioka单色仪为主体的实验装置 ,测量了紫外熔石英基底上镀制分束膜 5°入射的光谱特性 ,给出结果分析。扩大了Al MgF2 膜的应用范围     

纯碘化铯(CsI)晶体的发光与光衰减特性研究

纯碘化铯晶体是一种具有快衰减闪烁特性的新型辐射探测材料, 在伽马射线、中子和其它辐射探测技术中有重要的应用前景。本研究以Bridgman法所生长的纯碘化铯为对象, 分别研究了该晶体的透射光谱以及在紫外光、连续X射线、脉冲X射线和宇宙射线激发下的发射光谱、时间响应特性和沿晶体生长方向不同部位的光输出分布特点。实验测得晶体的吸收边为240 nm, 激发和发射波长分别位于241 nm和318 nm, 发光衰减时间分别为2~3 ns和18~25 ns。以尺寸为30 mm×30 mm×200 mm的晶体籽晶端和尾端与PMT耦合所测得的光输出分别是143 p.e/MeV和127 p.e./MeV, 尽管晶体两端的光输出存在12.6%的差异, 但没有观察到衰减时间长于100 ns的慢分量。这些性能进一步证明纯碘化铯晶体具有作为快闪烁体的优势。     

Al2O3-Cr多层中高温选择吸收薄膜的研究

太阳能选择吸收薄膜是太阳能集热器的关键部分,本文提出基于Al2O3介质和金属Cr的多层结构的选择吸收膜系,首先采用电子束热蒸发在硅基底上沉积了单层Cr薄膜,通过椭偏仪测试并分析了Cr薄膜的光学常数.在此基础上分别设计了Al2O3-Cr四层和六层选择吸收膜系,比较了两种膜系的吸收率和发射率.其次,对六层结构的选择吸收膜系进行了允差分析,给出了最敏感层厚度相对误差为20％时,选择吸收膜的吸收率和发射率.最后,采用电子束热蒸发技术在玻璃基底上制备了六层结构的选择吸收膜,测试结果表明,该膜系在常温下的吸收率可以到达0.96,发射率为0.043.并通过计算给出了制备的六层选择吸收膜在100,200,300,400,500℃下的发射率分别为0.045,0.052,0.063,0.071和0.092.     

钨酸盐晶体中负离子配位多面体的结晶方位与晶体的形貌

钨酸盐类晶体是重要的闪烁晶体．本文从钨酸盐类晶体中负离子配位多面体的结晶方位和相互联结的稳定性出发，探讨了钨酸盐类晶体中[WO4]2-等负离子配位多面体的结晶方位与晶体结晶形貌之间的关系；认为[WO4]2-四面体与金属阳离子（Ca2＋，Pb2＋，Zn2＋）结合时，由于晶体结构和生长条件（如籽晶取向等）的不同，在晶体各族晶面上的叠合速率和结构取向不同，晶体的结晶形貌迥然有别；四面体的面和梭的法线（L2）所对向的晶面，生长速率慢，顽强显露，均属晶体的板面；四面体的顶角所指向的晶面，生长速率快，显露面积小，经常消失．由此可以合理解释钨酸铅等闪烁晶体的生长特征．最后对ABO4型晶体的结构及习性特征进行了总结归纳．     

x射线激发Ce3+掺杂硼酸盐玻璃的闪烁发光

实验研究了Ce3+掺杂64B2O3-36BaO,75B2O3-25La2O3玻璃的闪烁发光。在80kV加速电压、阴极电流为5mA的高能X射线激发下闪烁光强为同样条件下闪烁晶体Nal(Tl)的3％～4％。对影响闪烁光输出的因素进行了分析。结果表明,Ce3+的自吸收和Ce4+离子的荷移吸收是降低闪烁光输出的主要因素;含镧硼硅酸盐玻璃系统可作为发展高密度玻璃有希望的系统;闪烁玻璃的制备技术对提高闪烁光输出起着重要作用。     

直流磁控溅射Cr/Cr2O3金属陶瓷选择吸收薄膜的研究

光谱选择吸收薄膜的制备是太阳能集热器高效吸收太阳能的关键技术。本文首先研究了磁控溅射Cr／Cr2O3金属陶瓷选择吸收膜中，氧气流量、溅射靶电流等基本参数对靶电压的影响，然后对不同氧气流量和靶电流条件下制备的Cr／Cr2O3金属陶瓷选择吸收膜的光学常数采用椭偏仪进行了研究，得到了不同工艺条件下的Cr／Cr2O3金属陶瓷薄膜的光学常数，最后经过膜系设计和试验镀制，制备出了室温下吸收率α≥95％、发射率ε≤5％的高性能太阳能选择吸收膜。     

X射线激发Ce~(3+)掺杂硼酸盐玻璃的闪烁发光

实验研究了Ce3+掺杂 6 4B2 O3- 36BaO ,75B2 O3-2 5La2 O3玻璃的闪烁发光。在 80kV加速电压、阴极电流为 5mA的高能X射线激发下闪烁光强为同样条件下闪烁晶体NaI(Tl)的 3%～ 4 %。对影响闪烁光输出的因素进行了分析。结果表明 ,Ce3+的自吸收和Ce4+离子的荷移吸收是降低闪烁光输出的主要因素 ;含镧硼硅酸盐玻璃系统可作为发展高密度玻璃有希望的系统 ;闪烁玻璃的制备技术对提高闪烁光输出起着重要作用。     

New bounds on the reliability of the consecutive k-out-of-r-from-n:F system

The main goal of this article is to show that the lower and upper bounds on the failing probability resp. reliability of consecutive k-out-of-r-from-n:F reliability systems developed by Sfakianakis, Kounias and Hillaris [M. Sfakianakis, S. Kounias, A. Hillaris, IEEE Trans. Reliability 1992;R-41:442–447] can be improved by applying fourth order Boole–Bonferroni bounds. Further we propose the application of the Hunter–Worsley bound in the framework of reliability system analysis, too. Numerical results of the formerly published test examples and harder problems are given. The computer code was written in and is available on request from the authors.     

Positron-annihilation lifetime in the high-Tc Oxides

The superconducting transition affects the positron-annihilation lifetime in the high-T_c oxides. This effect is due to the unusual properties of the oxides in the normal state and, in particular, to the small Fermi energy. The value of the shift also depends on the interlayer distance.     

Exploring the fracture toughness KIE and KIC of a medium-Strength steel plate using the surface-flaw test

The fracture toughness of a 30 CrMnSiA steel plate of three thicknesses (10,8 and 5 mm) and three widths (110,80 and 56 mm) has been investigated by using surface-flaw method under room temperature. It is not easy to compute the value of K_IE by the maximum applied load. But the values of K_IE and K_IC could be obtained easily, if the computation of the conditional applied load P₁₀ and P₅ based on the relative effective extension Δa/a₀ = 10% and 5% were adopted, together with the conditions of P_max/P₁₀ 1.2 and P_max/P₅ 1.3. The K_R — Δ_a curve, i.e. the resistance-curve described by the parameter K, has been plotted. The values of K_IC and K_IE are then the resistances corresponding to the real extensions of flaws of Δ/a₀ = 2 and 7%, respectively. These values so obtained are in good agreement with the computed values of K_IC and K_IE by using the conditional applied loads. The values of K_IC and K_IE so obtained are also in agreement with the value of K_IC converted from the J-integral and the effective value of K_IE computed by the maximum applied load, respectively.

An approximate relation between K_IC and K_IE has been found to be: K_IC = (0.85˜0.95)K_IE.

The requirements for the dimensions of specimens are: Thickness of plate: B 1.0(K_IC/σ_0.2)² or 1.25(K_ICσ_0.2)²]; Width of plate: 8 W/B 10, 4 W/2c 5; Effective length: l 2W.     

Frequency effect on the metal/polysilicon/oxide/silicon capacitance

In this work, we have studied the frequency effect on the metal/polysilicon/oxide/silicon (MS^POS) structure. We present the capacitance–voltage (C–V) characteristics at four frequencies (10 kHz, 100 kHz, 400 kHz and 1 MHz). The results show that the C–V curves have dispersion when the frequency decreases. The increase of the frequencies translates the C_T(V) curve towards negative voltages and causes the decrease of the minimum value of capacitance. The variation of the capacitance for low frequencies is less important compared to that of the high frequencies.     

Effects of the Sol-Concentration on the Structural and Dielectric Properties of Pb/sub 0.3/Sr/sub 0.7/TiO/sub 3/Thin Films Derived by the Sol-Gel Method

Pb_0.3Sr_0.7TiO₃(PST) thin films were deposited on Pt coated Si(100) substrates by sol-gel techniques using different sol-concentrations. The structural and dielectric characteristics of lead strontium titanate (PST) thin films as a function of the sol-concentration were investigated. PST thin films reveal a columnar texture through the thickness when the sol-concentration is lower than 0.30 M. PST thin films derived from 0.35 M sol show better dielectric characteristics with the dielectric constant, dielectric loss, tunability, and field of motion (FOM) (tun- ability/dissipation) of 200, 0.01, 47% and 47, respectively. The temperature dependence of the dielectric constant, dielectric loss and tunability of PST thin films were investigated in the temperature range of -140 to 120degC exhibiting a dielectric peak of about -45degC.     

Optimization of the thickness of glass/TiO2/Ag/Ti/TiO2/SiON multilayer film

The TiO₂/Ag/Ti/TiO₂/SiON multilayer film was deposited on glass substrate at room temperature using magnetron sputtering method. By varying the thickness of each layer, the optical property was optimized to achieve good selective spectral filtering performance in Vis-NIR region. The multilayer film achieves maximum transmittance of 92.7% at 690 nm, in which the both TiO₂ layers are 33 nm. For good conductivity and transmittance, a 4 nm Ti layer and a 30 nm SiON layer are necessary.     

On the characteristic voltage of high-Tc superconductors

The critical currents and normal resistances of the small bridges from yttrium-based high-T _c superconducting ceramics have been measured. The characteristic voltage of these bridges was found to be approximately 20 V. This effect can be explained if, between the ceramic grains, there are contacts of an order of one crystalline cell in size.The authors are grateful to V. N. Polushkin for his help in this investigation.     

Specific heat of the high-Tc oxide superconductors

We review the specific heat measurements on La₂CuO₄, La_2–xM_xCuO₄ (M = Ca, Sr, and Ba), YBa₂Cu₃O₇, and the Bi-Ca-Sr-Cu-O and Tl-Ca-Ba-Cu-O systems. Tables of properties derived from the data are presented. Results on RBa₂Cu₃O₇ (R=rare earth elements other than Y) are summarized, as are results on YBa₂(Cu_3–xM_x)O₇ (M=Zn, Cr, Fe, or Ni). The difficulties of analyzing the specific heat data, and specifically the separation of the contributions associated with magnetic impurities, are discussed. It is tentatively concluded that the data nearT _c are consistent with BCS theory, although they show evidence of fluctuation effects. It is also concluded that the low-temperature zero-field data on a majority of the high-T _c oxide superconductors provide evidence of anintrinsic term that is proportional toT, a result that is inconsistent with a gap in the electronic density of states.