衬底退火温度对ZnO纳米结构形貌和发光特性的影响

利用热蒸发Zn粉的方法,在Au/掺铝氧化锌(AZO) /石英衬底上生长ZnO纳米结构。为了研究不同 温度退火后的衬底对生长的ZnO纳米结构的影响,Au/AZO/石英衬底在生长纳米结构前分别在 300、500和700℃真空下退火。Au/AZO/石英衬底的表面形貌用原子力显微镜(AFM)观测 。ZnO纳米结构的微结构、形貌和 光学性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和荧光光 谱仪进行测量。结果表明,在未退火和300 ℃ 退火衬底上生长了大量的ZnO纳米棒,而在500℃退火衬底上沉积了大量ZnO纳米颗粒。单晶结构 的纳米棒的平均直径分别约50nm,其 生长机制为蒸气-液体-固体(VLS)生长机制。荧光光谱显示所有的样品 都存在紫外发光峰和深能级发射带,随着退火温度的升高,生长的纳米结构的紫外发光峰相 对强度增强,而深能级发射强度减弱。     

紫外辐射ZnO纳米棒的生长及性能

用退火法在玻璃、硅片衬底上先生长ZnO籽晶,然后在90℃下在醋酸锌和六亚甲基四胺溶液中生长了直径约为17 nm的ZnO纳米棒.采用X射线衍射仪(XRD)分析了不同衬底上生长的ZnO纳米棒的结构和择优生长取向,用扫描电子显微镜(SEM)观察了ZnO的形态,用荧光光谱仪分析了纳米棒的发光特性,讨论了籽晶、衬底类型和衬底放置方式对纳米棒的尺寸、排列趋向性和光学性能的影响.纳米棒的直径和排列依赖于衬底的初始状态,籽晶可以减小纳米棒的尺寸,增强纳米棒的排列有序性;一旦衬底上生长了籽晶,后续生长的纳米棒的尺寸、排列和性能与衬底的类型无关,纳米棒都具有强的紫光发射.但衬底的放置方式会影响其上纳米棒的形态,竖直放置的衬底易生长尺寸分布均匀的准有序排列的纳米棒.     

催化剂辅助化学气相沉积法制备准单晶ZnO纳米线

利用Au催化辅助化学气相沉积生长技术,在n-Si(111)衬底上制备了准单晶的ZnO纳米线.X射线衍射分析的结果表明, ZnO纳米线具有明显的沿(0001)方向定向生长的特征.扫描电子显微镜分析表明,ZnO纳米线的典型直径约为100 nm,长度为2～5 μm.讨论了Au催化辅助化学气相沉积生长技术制备ZnO纳米线的原理.     

直流溅射法制备SnO_2纳米颗粒的机理及工艺研究

采用直流溅射法成功制备出了SnO_2纳米颗粒,分析了SnO_2纳米颗粒的形成机理,研究了不同溅射时间、不同衬底材质对SnO_2纳米颗粒形成的影响规律。结果表明,溅射时间对SnO_2纳米颗粒的尺寸有显著影响。随溅射时间延长,颗粒尺寸呈线性增长,从约20 nm(1 min)增长到约80 nm(10 min)。衬底材质则对SnO_2纳米颗粒的形态及分布有显著影响。对比单晶硅、载玻片、喷金载玻片三种不同衬底材质,发现以单晶硅为衬底的纳米颗粒分布均匀,而以载玻片为衬底的纳米颗粒分布不均,并且随溅射时间延长,以载玻片为衬底的纳米颗粒发生团聚生长,颗粒粗大。载玻片衬底喷金处理后可使纳米颗粒的形貌及分布得到改善。     

ZnO纳米岛的MOCVD自组装生长

利用低压金属有机源气相沉积(LP-MOCVD)技术,在 (0001)蓝宝石衬底上生长ZnO纳米岛,发现在适当的生长条件下,可以生长出规则排列的纳米岛.实验发现随着生长时间的增加,在蓝宝石衬底上沉积的ZnO晶体颗粒无论是密度还是体积都在增加,并出现颗粒之间的交叠现象.与厚膜材料相比,相应的室温PL谱上显示出带边蓝移现象,随着生长温度的提高将大大增加ZnO在蓝宝石衬底上成核的困难.另外,所有样品的室温PL谱在带边附近均存在一个展宽峰,这可能是由表面态或晶体缺陷造成的.研究表明选择合适的生长时间与生长温度是利用MOCVD生长高质量ZnO纳米岛的关键因素之一.     

一维ZnO纳米/微米棒的制备及光学性能研究

采用溶胶-凝胶法,以六水硝酸锌和乙二醇单甲醚为主要原料,在SiO2玻璃衬底上旋涂一层致密的ZnO籽晶,用水热法,通过对ZnO籽晶层面朝下和朝上分别制备了ZnO纳米棒和微米棒。研究了不同生长液浓度对ZnO纳米/微米棒的形貌和光学性能的影响。结果表明,ZnO纳米棒直径约在Φ(60~90)nm之间,长度约为1 600nm,微米棒直径约Φ(1~4)μm,长度约8~14μm;随着生长液浓度的增加,ZnO纳米棒越致密,而ZnO微米梭生长成ZnO微米棒;ZnO纳米/微米棒的光致发光(PL)光谱强度随着生长液浓度的增加逐渐增强     

不同金颗粒尺寸的Au@SiO_2纳米粒子拉曼增强研究

制备壳厚为2~3 nm,核尺寸为15、25、50 nm的Au@Si O_2纳米粒子代替Au纳米粒子,用来研究电磁场耦合强度与粒子尺寸和间距之间的关系。实验结果表明处在硅衬底上核尺寸为50 nm的Au@Si O_2纳米粒子增强效果更佳。为了进一步提高Au@Si O_2纳米粒子的拉曼活性,将核尺寸为50 nm的Au@Si O_2纳米粒子置于光滑的金表面,结果表明罗丹明6G的信号获得了更大的增强。利用时域有限差分法分别计算了不同粒径、间距和处在不同基底材料上的Au纳米粒子二聚体的表面增强拉曼散射(SERS)活性,结果表明粒子尺寸越大,间距越小,处在金衬底上的Au纳米粒子二聚体电磁场耦合强度越高,这与实验结果完全相符。另外,粒子间的耦合方式从粒子间隙转移到粒子与衬底之间,克服了粒子间距不可控的问题。这为获得灵敏度和稳定性更高的拉曼活性基底提供了新的思路。     

透明导电薄膜ZnO:Zr的反应磁控溅射法制备及表征

以Zn金属靶和Zr金属片组成的Zn:Zr为靶材,利用直流反应磁控溅射法在玻璃衬底上制备ZnO:Zr透明导电薄膜。研究了靶与衬底之间的距离对所制备薄膜结构和性能的影响。实验制备的ZnO:Zr薄膜为六方纤锌矿结构的多晶薄膜,且具有与衬底方向垂直的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO:Zr薄膜的结构、生长速率、密度及电学性能有很大影响。靶与衬底之间的最佳距离为6.0cm,在此条件下制备的ZnO:Zr薄膜具有最小电阻率1.78×10-3Ω.cm,其可见光透过率为88.5%,折射率为2.04。     

Au/SiO_2复合纳米颗粒膜的制备及退火行为研究

室温下用磁控溅射法在Si(111)衬底上生成Au/SiO2复合纳米颗粒膜。用扫描电子显微镜(SEM)和X射线衍射方法(XRD)对不同温度退火后的Au/SiO2复合薄膜的表面形貌、微观结构进行了表征。SEM结果表明,随着退火温度升高,Au纳米颗粒先形成大的聚集后出现分布均匀的超微颗粒。XRD结果显示700℃时Au的衍射峰最强,随后峰强有所减弱,这与SEM检测结果相吻合。另外实验结果证实在1000℃退火时自组装生成空间分布均匀(直径约为70nm)的Au纳米点,可以用来作为生长一维纳米材料的模板。     

ZnO纳米颗粒的紫外光探测器制备及其特性

为了发展高性能、低成本和结构简单的ZnO紫外 光探测器。在本文中,利用溶液法,制备出ZnO 纳米颗粒,采用透射电子显微镜(TEM)、X射线衍射仪(XRD)、紫外-可见分光光度计和荧光 光谱仪,分别 研究了ZnO纳米颗粒的形貌、晶相结构和光学特性。结果显示:样品呈球形状的颗粒,尺寸 分布在6~8.5nm 之间,平均粒径为7.1nm,为六方纤锌矿结构。发现ZnO纳米颗 粒的陡峭吸收边出现在370nm附近,在390nm 处出现一个很强的近带边发射峰和一宽泛的可见光发光带。此外,利用制备的ZnO纳米颗粒 ,旋涂在刻蚀 有叉指电极的FTO(SnO₂:F)上,制备出紫外光探测器,测试了它在暗态和365 nm紫外光照下的电流-电压(I-V) 和电流-时间(I-t)特性。结果表明:紫外光探测器的灵敏度、光响应度、响 应时间、恢复时间分别为62.4(在 －3.5V处),13.6A/W(在+5V处), 15s。另外,它的光响应机理主要由于ZnO纳米 颗粒表面吸附的氧起主导作用。     

Reference sample for the evaluation of SEM image resolution at a high magnification--nanometer-scale Au particles on an HOPG substrate

A new sample preparation technique is proposed for evaluating image resolution in a high magnification range of SEM. The proposed reference samples are uniformly distributed nanometer-scale Au particles on HOPG substrate. The samples are fabricated using the conventional ion sputter coater. The grain size and granularity are controlled by reducing the sputter-induced damage in the top layers of HOPG. The sample heating prior to SEM imaging is essential to suppress beam induced contamination. The heating time and temperature are selected to inhibit large increases in the grain sizes of Au particles. The sputter coated Au particles on the freshly cleaved HOPG substrate are superior in the deviations of particle sizes to the vacuum evaporated Au particles on the plasma etched substrates. The granularity and homogeneous distribution of Au particles on HOPG are demonstrated at a magnification range of x180k to x800k. The average grain size of 3.2 nm and the standard deviation of 1.3 nm are obtained under the condition of an annealing temperature of 180 degrees C for 7 min after sputter coating an average thickness of 0.7 nm.     

Electrical properties of ZnO Nano-particles embedded in polyimide

The ZnO nano-particles were made in the polyimide dielectric matrix by using the chemical reaction between the zinc metal film and polyamic acid. The concentration of the ZnO particle is about 1.5×10¹² cm⁻², with average size below 10 nm, and its shapes are almost spherical. Then, the polyimide layer is a stable dielectric material with a dielectric constant of 2.9. To investigate the electrical properties of ZnO particles in the polyimide insulator film, we fabricated a metal-insulator-semiconductor (MIS) structure and measured capacitance-voltage (C-V) with temperature modulation. At room temperature, C-V hysteresis with a voltage gap of 2.8 V appeared in the MIS structure using SiO₂/Si substrate. As the measuring temperature decreased, the C-V curves were shifted slightly to the accumulation region with gate bias. It was considered that the electrical charging may occur dominantly in nanoparticles, having only a few defects at the interface of the polyimide/SiO₂ and the polyimide/ZnO.     

Growth and characterization of ZnO nanowires grown on the Si(1 1 1) and Si(1 0 0) substrates: Optical properties and biaxial stress of nanowires

In this paper the effects of silicon substrates with different orientations on the morphological and optical properties as well as biaxial stress of ZnO nanowires were investigated. The ZnO nanowires were grown on Si(1 0 0) and Si(1 1 1) substrates by the vapor–solid (VS) method using a physical vapor deposition reactor. In addition ZnO nanowires were grown on Si(1 1 1) substrate by the vapor–liquid–solid (VLS) method using an Au film as catalyst, which were deposited on Si(1 1 1) substrate using a sputtering method, with the same conditions. Room temperature photoluminescence (PL) spectrum showed a stronger ultraviolet (UV) peak at 381 nm for the nanowires that were grown on Si(1 1 1) by the VS method than those that were grown on Si(1 0 0) with the same green emission (deep-level emission (DLE)) intensities at about 520 nm peak. On the other hand, the PL result of the ZnO nanowires, which were grown by the VLS method, showed the same intensities for the both UV and DLE peaks. Furthermore, the effects of silicon substrate orientation and Au catalyst on biaxial stress of the nanowires were studied by Raman spectrometer. It was discussed that Au catalyst was one of the important factors that could affect the biaxial stress value of the ZnO nanowires that were grown on Si substrates.     

Si(100)衬底对ZnO纳米线阵列生长方向的控制作用

采用热分解ZnO粉末法,以Au为催化剂,在Si(100)衬底上外延生长了ZnO纳米线阵列。用扫描电子显微镜(SEM)分析表明:ZnO纳米线的直径在100nm左右,长度约3μm,与衬底表面的夹角约为70.5°,纳米线具有四个特定的倾斜方向A,B,C,D。X射线衍射(XRD)图谱上只有ZnO(0002)衍射峰,说明ZnO纳米线沿C轴择优生长。结合Si与ZnO的晶格结构特征,理论研究得出ZnO纳米线与Si基片的晶格匹配关系为:[0001]_(ZnO)∥[114]_(Si),[0001]_(ZnO)∥[■■4]_(Si),[0001]_(ZnO)∥[1■4]_(Si),[0001]_(ZnO)∥[■14]_(Si),失配度为1.54%。得出了Si(100)衬底对ZnO纳米线生长方向具有控制作用的结论。     

连续氩氪离子激光晶化非晶硅薄膜的研究

为了研究连续激光晶化非晶硅薄膜中激光功率密度对晶化效果的影响,利用磁控溅射法制备非晶硅薄膜,采用连续氩氪混合离子激光器对薄膜进行退火晶化,用显微喇曼光谱测试技术和场发射扫描电子显微镜研究了薄膜在5ms固定时间下不同激光功率密度对晶化效果的影响,并对比了普通玻璃片和石英玻璃两种衬底上薄膜晶化过程的差异。结果表明,在一定激光功率密度范围内(0kW/cm2~27.1kW/cm2),当激光功率密度大于15.1kW/cm2时,普通玻璃衬底沉积的非晶硅薄膜开始实现晶化;随着激光功率密度的增大,晶化效果先逐渐变好,之后变差;激光功率密度增大到24.9kW/cm2时,薄膜表面呈现大面积散落的苹果状多晶硅颗粒,晶粒截面尺寸高达478nm ;激光功率密度存在一个中间值,使得晶化效果达到最佳;石英衬底上沉积的非晶硅薄膜则呈现与前者不同的结晶生长过程,当激光功率密度为19.7kW/cm2时,薄膜表面呈现大晶粒尺寸的球形多晶硅颗粒,并且晶粒尺寸随着激光功率密度的增大而增大,在 27.1kW/cm2处晶粒尺寸达到最大5.38m。研究结果对用连续激光晶化法制备多晶硅薄膜的研究具有积极意义。     

ZnO纳米棒与Si(111)和Si(100)衬底的外延关系(英文)

运用热蒸发技术在Si(111)和Si(100)基片上制备了ZnO纳米棒。SEM表征显示,ZnO纳米棒的直径约100nm,长度均匀,大约3μm;XRD表征发现ZnO纳米棒沿[0001]晶向择优生长。通过实验结果与理论分析得出:对于Si(111)基片上的样品,大部分ZnO纳米棒沿6个对称方向生长,而且与基片之间的夹角为54.7°,ZnO与Si(111)的外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[141]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[411]Si,或[0001]ZnO‖[4]Si。对于Si(100)基片上的样品,大部分ZnO纳米棒沿4个对称方向生长,与基片之间的夹角为70.5°,其外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[14]Si,或[0001]ZnO‖[14]Si。通过比较分析得出Si基片可以控制ZnO纳米棒的生长方向。     

柔性PEN衬底ZnO：Ga薄膜的性能研究

以PEN柔性薄膜作为衬底,采用直流对靶磁控溅射的方法,在室温下制备ZnO：Ga薄膜。研究了不同溅射功率和不同溅射压强下制备出的薄膜表现出不同的光学和电学特性。经过溅射压强和溅射功率的优化,获得薄膜厚约900nm、电阻率为7．72×10^-4Ω·cm和可见光平均透过率超过75％的PEN衬底ZnO：Ga薄膜。将其应用于PE...     

激光诱导硅烷气相合成纳米硅粉研究

采用高功率ＣＯ２激光诱导高纯硅烷气相反应，制备出粉体平均粒径为１０～１２０ｕｍ，晶粒度与平均粒径比为０．３～０．７的各种纳米结晶硅粉。制备出的硅粉粒度均匀，粒子呈球形，但部分粒子间出现烧结。粉体粒径随激光功率、反应压力的增加而增加，随硅烷流量、稀释Ａｒ气的增加而减小。晶粒度对硅烷流量和反应压力的变化不敏感，但随激光功率的降低和混合Ａｒ气的增加而明显减小。Ｓｉ粒子的形成经历了单晶粒子的生长和这些粒子间的碰撞生长过程。     

Broadband scattering of the solar spectrum by spherical metal nanoparticles

Metal nanoparticles offer the possibility of improved light trapping in solar cells, but careful design is required to maximise scattering and minimise parasitic absorption across the wavelength range of interest. We present an analysis of the broadband scattering and absorption characteristics of spherical metal nanoparticles, optimized for either crystalline silicon (c‐Si) or amorphous silicon (a‐Si:H) solar cells. A random two‐dimensional array of optimally sized Ag spheres can scatter over 97% of the AM1.5 spectrum from 400 to 1100 nm. Larger particles are required for c‐Si devices than a‐Si:H due to the increased spectral range, with optimum particle sizes ranging from 60 nm for a‐Si:H to 116 nm for c‐Si. Positioning the particles at the rear of the solar cell decreases absorption losses because these principally occur at short wavelengths. Increasing the refractive index of the surrounding medium beyond the optimum value, which is 1.0 for a‐Si:H and 1.6 for c‐Si, shifts absorption to longer wavelengths and decreases scattering at short wavelengths. Ag nanoparticles scatter more of the solar spectrum than Au, Cu or Al nanoparticles. Of these other metals, Al can only be considered for a‐Si:H applications due to high absorption in the near‐infrared, whereas Au and Cu can only be considered for the rear of c‐Si devices due to high absorption in the ultraviolet (UV) and visible. In general, we demonstrate the importance of considering the broadband optical properties of metal nanoparticles for photovoltaic applications. Copyright © 2012 John Wiley & Sons, Ltd.     

Fabrication of Periodic Nanostructure Assemblies by Interfacial Energy Driven Colloidal Lithography

A novel interfacial energy driven colloidal lithography technique to fabricate periodic patterns from solution‐phase is presented and the feasibility and versatility of the technique is demonstrated by fabricating periodically arranged ZnO nanowire ensembles on Si substrates. The pattern fabrication method exploits different interfaces formed by sol–gel derived ZnO seed solution on a hydrophobic Si surface covered by a monolayer of colloidal silica spheres. While the hydrophobic Si surface prevents wetting by the seed solution, the wedge shaped regions surrounding the contact point between the colloidal particles and the Si substrate trap the solution due to interfacial forces. This technique allows fabrication of uniform 2D micropatterns of ZnO seed particles on the Si substrate. A hydrothermal technique is then used to grow well‐defined periodic assemblies of ZnO nanowires. Tunability is demonstrated in the dimensions of the patterns by using silica spheres with different diameters. The experimental data show that the periodic ZnO nanowire assembly suppresses the total reflectivity of bare Si by more than a factor of 2 in the wavelength range 400–1300 nm. Finite‐difference time‐domain simulations of the wavelength‐dependent reflectivity show good qualitative agreement with the experiments. The demonstrated method is also applicable for other materials synthesized by solution chemistry.