注入同步锁相环式时钟恢复电路MMIC的设计和实现

设计了单片集成的超高速NRZ码时钟恢复电路,该电路采用注入同步压控振荡器结合锁相环的结构,在保持普通PLL型时钟恢复电路优点的同时,加快了锁相环的响应速度,提高了系统的稳定度。利用法国OMMIC公司的0.2μmGaAsPHEMT,制造了MMIC芯片,在输入速率为8.2Gb/s、长度为223-1伪随机序列的情况下,输出时钟的均方根抖动为1.6ps。芯片面积为1.5mm×2mm。采用-5V电源供电,功耗约为600mW。     

单比特数字接收机

介绍了单比特电子战数字接收机的基本原理，该接收机在简化DFT算法的同时采用低比特A／D变换，降低了宽带电子战接收机的实现难度，克服了由于超宽带高速采样带来的一系列问题。分析了加窗对单比特接收机的性能影响，并给出了一种基于DSP的实现方法，在此基础上建立了一个单比特电子战系统测试系统。利用该系统通过仿真试验，详细研究了单比特接收机的虚警概率、检测概率及双信号动态范围，并与DFT接收机进行了比较，并指出除了双信号动态范围较小外，单比特电子战接收机的性能基本相同。增加输入信号的比特数是提高单比特电子战接收机双信号动态范围的有效方法，当采用2比特量化时该动态范围可以增加5dB。最后分析了该接收机的应用前景。     

一种高速数据接收同步电路的设计

介绍了一种高速数据接收同步技术,用以解决在高速、超高速情况下数据同步困难的问题.随着电路工作频率的提升,数据的稳定有效周期变得越来越短,对采样时钟的时序要求也越来越高,特别是由于工艺波动、温度变化等原因,数据与时钟的相位关系发生变化,导致时钟采样时发生误码,电路不能正常工作.采用该数据接收同步技术,可以将时钟采样设置为最佳时序,并且当时钟与数据相位关系变化时,能自动对时钟相位进行调节,重新回到最佳时序,从而大大提高数据接收的可靠性.     

脉冲超宽带系统中的高速低功耗ADC设计

采用TSMC 0.13 μm CMOS工艺,设计并实现了一种适用于脉冲超宽带无线通信系统的低功耗高速单比特模数转换器(ADC)。芯片内部采用并行数据降速输出电路。芯片测试结果表明,该ADC最高采样率为2.5 GS/s,单比特模数转换器最小分辨率为10 mV,芯片核心电路面积为0.72 mm²,在1.2 V电源供电下消耗功耗42 mW。     

微电子所研制成功8GS/s 4bit ADC和10GS/s 8bit DAC芯片

近日,中科院微电子所微波器件与集成电路研究室(四室)超高速电路课题组在超高速ADC/DAC芯片研制上取得突破性进展,成功研制出8GS/s 4bit ADC和10GS/s 8bit DAC芯片。ADC芯片采用带插值平均的Flash结构,集成约1250只晶体管,测试结果表明芯片可以在8GHz时钟频率下稳定工作,最高采样频率可达9GHz。超高速DAC芯片采用基于R-2R的电流开关结构,同时集成了     

磁卡解码芯片中锁相环电路设计

为了产生一个与输入数据同步的脉冲作为磁卡解码芯片的时钟信号.设计了一种数字锁相环电路.该电路通过产生一个与输入数据周期有关的、具有特定宽度的脉冲信号来对输入信息进行处理.最终得到与输入同步的数据、时钟信号,用来控制芯片的工作;另外,该电路还具有纠错能力强,结构简单的优点.测试结果表明;加入该电路后,芯片的工作情况完全符合要求.     

新型超宽带探地雷达数字采样接收机设计

基于探地雷达应用,结合等效时间采样技术和实时采样技术的优点,提出了一种新的超宽带等效数字采样技术。该采样技术不需要采用集成模数转换(A/D),而是通过对模拟信号进行1比特并行时间交替采样和均匀量化来实现模数转换的功能。基于该技术思想,利用一片现场可编程门阵列(FPGA)研制出具有等效4.096GHz采样率、7位精度模数转换功能的超带宽探地雷达数字采样接收机。电路结构紧凑,功耗低于1.5W.实测结果表明:该接收机的模拟带宽达500MHz,具有很低的量化噪声,能很好的重构输入信号。同时,该接收机具有很好的性能,能满足超宽带探地雷达的要求。     

一种全CMOS工艺吉比特以太网串并-并串转换电路

本文介绍了一种单片集成的吉比特以太网串并－并串转换电路。在芯片中，模拟锁相环产生1．25GHz高速时钟（当芯片用于光纤网络，时钟速率就为1．06GHz)，同时一个10到1多路选择器完成并行数据到串行的转换。在接收端，差分输入信号依次经过均衡电路、双端－单端转换电路转换成数字信号。同时，数据和时钟提取电路提取出时钟，并将数据重新同步。最后，串并转换电路完成串行－并行转换和字节同步。实验芯片采用0．35μmSPTM CMOS工艺，芯片面积为1．92mm^2，在最高输入输出数据波特率条件下的功耗为900mW。     

一种改进的2位全并行A/D转换器

基于0.18 μm CMOS工艺,设计了一种改进的2位全并行A/D转换器。ADC的输入信号采用差分输入形式,差模输入信号经过源跟随器后直接进入比较器,去除了参考电压所需的电阻网络和模拟采样保持电路模块。在编码电路之后加入一个数字采样保持器,实现了时钟对量化信号的采集和数据同步对齐。仿真结果表明,在1.8 V工作电压、25 μA和15 μA偏置电流下,可以对频率为4 MHz,摆幅为100 mV的两路差模信号进行量化,整体功耗小于0.5 mW。     

一种40 GSa/s超宽带采样保持电路

基于0.7μm的InP双异质结双极晶体管（DHBT）工艺设计了一种超高速宽带采样保持电路。输入缓冲器采用Cherry-Hooper结构有效提升了电路的增益和带宽。时钟缓冲器采用多级Cascode结构提升时钟信号的带宽。芯片面积1.40 mm×0.98 mm，总功耗小于1.1 W。测试结果表明：电路可以在40 GSa/s采样速率下正常工作。电路的-3 dB带宽在采样态为24 GHz，在采样保持态为19 GHz。在采样保持态，当输入4 GHz、-6 dBm信号时，电路的总谐波失真（THD）低于-41.5 dBc，有效位数（ENOB）相当于6.6。时域测试波形在本文也有呈现。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.