Matching Condition of Direct THz-Signal Detection from On-Chip Resonating Antennas with CMOS Transistors in Non-resonant Plasma Wave Mode

This paper presents matching condition for detector at THz frequencies, which directly read signals from an integrated antenna. We use direct THz-signal detections with CMOS transistors in non-resonant plasma wave mode, which are embedded in on-chip resonating antennas. The detector detects THz envelope signals directly from the side edges of the on-chip patch antennas. The signal detection mechanism is studied in the view of the impedance conditions of the antenna and the detector. The detectors are implemented with stacked transistors structures to achieve high responsivity. The measured responsivities of the detectors with antenna impedances that were simulated to be 599.7, 912.3, 1565, and 3190.6 Ω agree well with the calculated values. Moreover, the responsivity dependence on the detector impedance is shown with two different input impedances of the detectors. Since CMOS circuit models from foundry are not accurate at frequencies higher than f _t , the matching guideline between the antenna and the detector is very useful in designing high responsivity detectors. This study found that a detector has to have a large input impedance conjugately matched to the antenna’s impedance to have high responsivity.     

Study of the Coupling of Terahertz Radiation to Heterostructure Transistors with a Free Electron Laser Source

High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. Here, we present a tool based on a Free Electron Laser source to study the detection mechanism and the coupling of the high frequency signal into the transistor channel. We performed a mapping over a wide area of the coupling of 0.15 THz radiation to an AlGaN/GaN transistors with cut-off frequency of 30 GHz. Local, polarization-dependent irradiation allowed us to selectively couple the signal to the channel either directly or through individual transistor bias lines, in order to study the nonlinear properties of the transistor channel. Our results indicate that HEMT technology can be used to design a millimeter-wave focal plane array with integrated planar antennas and readout electronics.     

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel method

We have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO₂ gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with nanostructured SiO₂ as gate dielectric have been investigated. The photocurrent of the transistor increases with an increase in illumination intensity. This suggests that the pentacene thin film transistor behaves as a phototransistor with p-channel characteristics. The photosensitivity and responsivity values of the transistor are 630.4 and 0.10 A/W, respectively at the off state under AM 1.5 light illumination. The field effect mobility of the pentacene phototransistor was also found to be 2.96 cm²/Vs. The nanostructured surface of the gate possibly is the cause of the high-mobility value of the phototransistor due to light scattering from the increased surface area.     

Characteristics of 1.3-μm InGaAsP lasers used as photodetectors

The photodetection capabilities of 1.3-μm channel substrate lasers are studied. The diodes can be used either as lasers or detectors in single-mode-fiber half-duplex communication links. As a detector, a responsivity of 0.26 A/W is obtained by efficiently coupling the input radiation into the facet using a lensed single-mode fiber. The spectral bandwidth extends from 1.1 to 1.37 μm. The dark current at room temperature is 200 nA at 1-V bias and due in part to current leakage through the Fe-doped InP blocking layer. As lasers, the diodes have a frequency response of 4 GHz, and as detectors, the 3-dB bandwidth is 600 MHz     

基于场效应晶体管的太赫兹探测器中天线设计的一种有效方法

在场效应晶体管太赫兹探测器中,合理的天线设计可以增强晶体管和太赫兹波之间的耦合效率,从而提高太赫兹探测器的响应度.提出一种基于晶体管栅极边缘沟道电场的仿真来设计平面天线的方法.这种方法尤其适用于太赫兹波段晶体管输入阻抗不容易得到的情况.通过流片完成的基于氮化镓高电子迁移率晶体管的太赫兹探测器的响应度测试证实了这种方法的有效性.集成碟形天线和双偶极子天线的太赫兹探测器最大响应度分别在170.7 GHz(1568.4 V/W)和124.3 GHz(1047.2 V/W)频点处测得,这个测试结果接近基于晶体管栅极边缘沟道电场的仿真结果.     

Effects of the substrate on the response of pyroelectric detectors

In our studies dealing with a theoretical analysis on the response of pyroelectric detectors, it has been found that for substrate-attached pyroelectric detectors, the current responsivity falls off with decreasing frequency below a certain frequency due to the flow of heat out of the pyroelectric crystal into the substrate. The rate of the falloff depends on the thermal conductivity of the substrate. The higher the thermal conductivity, the faster the rate of the falloff. The current responsivity flattens out in a lower intermediate frequency range of 10^-2to 10²Hz. In this flat plateau region, the smaller the substrate thermal capacity, the higher the current responsivity. The theoretical analysis agrees with the experimental results using LiTaO3detectors mounted on silicon substrates.     

Microstrip Antenna–Oscillators Integrated with a Waveguide Built in a Dielectric Substrate

The design of a microwave oscillator based on a microstrip log-periodic antenna integrated with a field effect transistor and a waveguide built in a dielectric substrate has been developed and analyzed. The waveguide geometry provides the possibility of propagation and radiation at both the fundamental frequency of the log-periodic antenna and harmonics. Computer simulation of the oscillator design in a frequency range near resonance frequencies of the log-periodic antenna is conducted. The possibility of summation of powers of several antenna–oscillators arranged ias a linear phased array is investigated.     

A 90-100 GHz double-folded slot antenna

A double-folded slot antenna (DFS) has been designed, fabricated, and tested at 90-100 GHz. The antenna shows a very wideband impedance around 20 Ω from 85 to 110 GHz. The low impedance is compatible with superconductor-insulator-superconductor (SIS) junctions, Schottky diodes or high electron mobility transistor (HEMT) amplifiers, which require a low impedance at millimeter wave frequencies. The antenna is placed on a dielectric lens to synthesize a semi-infinite substrate and realize high-directivity patterns. The measured radiation patterns agree very well with theoretical calculations and demonstrate symmetric main beams and sidelobe levels below -15 db over a 10% bandwidth. The double folded slot antenna is an attractive candidate for low-cost wideband millimeter-wave monolithic microwave integrated circuits (MMIC) front ends     

蝶形天线增强的HEMT室温太赫兹探测器

介绍了一种基于GaN/AlGaN高电子迁移率晶体管(HEMT)的高速、高灵敏度室温太赫兹探测器。在太赫兹波辐射下,HEMT源漏端产生直流光电流,并能被栅压灵敏地调控。探测器中新颖的蝶形天线设计使接收到的太赫兹电场得到显著增强,提高了探测器的响应度。通过测量探测器对不同偏振方向的太赫兹光的响应,有效验证了蝶形天线对太赫兹电场的增强作用。室温下,探测器的等效噪声功率约为5×10-10W/Hz21,平均响应度达42mA/W。实验结果表明,光电流的产生与二维电子气沟道的场效应特性和入射太赫兹波电场在电子沟道中的分布密切相关。自混频理论能很好地描述实验结果。     

Compact Dual Band-Notched Monopole Antenna with Modified Radiating Patch for UWB Wireless Applications

Ultra-wideband (UWB) planar antennas with single or multiple notched frequency bands properties have recently been considered for various communications between wireless devices. In this study, a low profile microstrip monopole antenna with double band-filtering function is designed and investigated. FR-4 dielectric with properties of ε = 4.4 and δ = 0.02 has been employed as the antenna substrate. The configuration of the proposed design is composed of a modified fork-shaped radiating patch with inverted Ω-shaped slot and a pair of coupled Γ-shaped parasitic structures, a feed-line and a ground plane. The proposed dual band-notched UWB antenna provides good impedance bandwidth characteristic from 2.89 to 12.43 GHz for VSWR <2 with two notched bands which cover all the 5.2/5.8 GHz of WLAN, 3.5/5.5 GHz of WiMAX and 4-GHz of C bands ranges. The antenna provides good radiation behavior with sufficient gain levels over its operation frequency band.     

Plasmon Excitation and Plasmonic Detection of Terahertz Radiation in the Grating-Gate Field-Effect-Transistor Structures

Physics of plasma oscillations and basic principles of plasmonic detection of terahertz radiation in the grating-gate transistor structures with two-dimensional electron channels are considered. It is shown that the grating-gate-transistor plasmonic detectors can be efficiently coupled to terahertz radiation. Plasmonic detection response considerably increases if the electron density in the grating-gate transistor structure is spatially modulated.     

Performance analysis of an open-loop resonator loaded terahertz microstrip antenna

In this paper, an enhanced electrical performance of the open-loop loaded microstrip patch antenna at terahertz frequency has been investigated. The proposed antenna is designed to radiate at frequencies in the range of 0.5-0.7 THz with high gain and radiation efficiency. The effect of various substrate parameters on the electrical performance of the proposed antenna has been analyzed and simulated. The simulation has been performed using the CST Microwave studio, a commercial simulator based on finite integral technique. The directivity and radiation efficiency of the proposed antenna is 22.58 dBi and 94.50%, respectively, at 600 GHz. Further, the simulated results have been compared with Ansoft HFSS, a commercially available simulator based on the finite element method. We have also compared this proposed analytical result with reported literature with scale down approach.     

The pyroelectric detector of infrared radiation

The pyroelectric detector is a thermal sensor of infra-red radiation requiring no bias. While in principle a pure capacitor (hence theoretically noiseless), the detector has a varying noise contribution as a function of frequency due to a load resistor, series loss resistance, and amplifier. The actual sensor is a pyroelectric crystal exhibiting spontaneous polarization. The spontaneous polarization and dielectric constant of the crystal are temperature-dependent. A change in incident power raises the detector temperature causing an electric charge to appear across the electroded surfaces cut perpendicular to the crystal's ferroelectric axis. Under open circuit conditions, a voltage is obtained which is ultimately neutralized by current flow through the leakage resistance or load resistor. The evacuated detector package incorporates an electroded flake of triglycine sulfate mounted on a substrate of low thermal and electrical conductivity, a field effect transistor, load resistor, and an infrared transparent window. Data on the detectivity, responsivity, and noise as a function of frequency and area are presented. Polycrystalline pyroelectric detectors of TGS are feasible and simplify the construction of arrays and mosaics. Applications of the pyroelectric detector to date have been in a multielement line scanner, thermal imaging camera, spectrometer, and laser calorimeter.     

High Current Responsivity and Wide Modulation Bandwidth Terahertz Detector Using High-Electron-Mobility Transistor for Wireless Communication

A high-current-responsivity terahertz (THz) detector was fabricated using a broadband bow-tie antenna and an InAlAs/InGaAs high-electron-mobility transistor (HEMT) with a short gate length. High-current responsivity can be achieved by using a short gate length; the resulting high transconductance exhibited ballistic transport in the channel. We fabricated the HEMT detector with a 50-nm-long channel; the transconductance was 1.2 S/mm and the subthreshold slope was 120 mV/dec, yielding a high-current responsivity (～5 A/W) and a cutoff frequency of 460 GHz. We also measured the modulation bandwidth of the THz detector using a heterodyne mixing technique with a uni-traveling carrier photodiode (UTC-PD) for providing the radio frequency (RF) and a frequency multiplier as a local oscillator. The intensity of the intermediate signal (IF) was measured by changing the frequency of the UTC-PD; very high bandwidths of up to 26 GHz were obtained. The experimental results agree well with electromagnetic simulations, which indicate that the bandwidth is determined by the external circuit. The conversion gain from RF to IF was ?2 dB in the heterodyne mixing by using the HEMT detector.     

Model for DMOST threshold voltage

An analytical model for the channel region in MOS-gated power transistors has been developed. The model takes into account the effect of substrate doping gradient on the threshold voltage of the transistor and it can be applied to lateral and vertical DMOS and IGBT transistor structures. The model has been tested by comparing the calculated I-V characteristics for an MOS structure having various doping gradients to the results from a 2-D device simulator.<>     

Design and analysis of single and multi-input multioutput triple-band metamaterial inspired antennas for WiMAX,WLAN, and satellite applications

This work proposes an electrical compact triple-bands antenna founded on a composite left-/right-handed approach. This structure contains a rectangular patch combined with two unit cells based on the metamaterial properties that are used to produce wide electrical lengths in miniature physical sizes. Thus, the presented antenna is designed with a lower resonant frequency and miniature physical dimensions compared to conventional antennas. The suggested antenna has been produced on top of the FR4 substrate having tan δ = 0.022, εr = 4.58, and a size of 28 × 16 × 1.6 mm³. This structure provides three bandwidths of (2.391–2.54 GHz), (3.42–3.56 GHz), and (5.02–11.40 GHz). Additionally, a multi-input multioutput (MIMO) antenna is designed by placing two similar radiating patches in a perpendicular shape. Therefore, this design approach has been used to achieve an important isolation among ports and less than −30 dB at frequency bands. The results of radiation patterns, envelope correlation coefficient, diversity gain, and channel capacity loss are below to 0.06, 10 dB, and 0.4 b/s/Hz respectively, which confirms that the MIMO antenna is compatible with wireless MIMO devices. These antennas have been modeled and experimentally confirmed, and the results have proven that the suggested antennas are useable and can support multi-standard wireless applications.     

Metamaterial Superstrate and Electromagnetic Band-Gap Substrate for High Directive Antenna

A high directive planar antenna made from a metamaterial superstrate and an electromagnetic band-gap (EBG) substrate has been investigated. A patch antenna surrounded with EBG structures is used as the radiation source. The CST Microwave Studio is used for the simulation. The results show that the gain of the antenna with metamaterial is 21.6 dB at the operating frequency of 14.6 GHz. Compared with the patch feed with the same aperture size but without the metamaterial superstrate, the performance of the antenna is improved obviously and the gain increases about 12.4 dB.     

Compact and Sensitive Millimetre Wave Detectors Based on Low Barrier Schottky Diodes on Impedance Matched Planar Antennas

Compact and highly responsive millimeter wave planar Schottky detectors are proposed for uni-planar and low-cost fabrication. For optimum power transfer, the zero-bias Schottky diodes are impedance matched by the antenna design itself, with an established meander dipole and a new folded dipole type. In particular, up to 200GHz, the folded dipole exhibits a single responsivity peak, notably beneficial for communications. The realized detectors exhibit an outstanding system RF voltage responsivity of up to 16005mV/mW at 87.8GHz without lenses or pre amplification. In addition, an excellent NEP level is demonstrated by the detectors with 0.39pW/ \(\sqrt {\text {Hz}}\) .     

A Double-sided Printed Dipole Array with an Electromagnetic Band-Gap Reflector

Electromagnetic band-gap (EBG) structures have unique properties in controlling the propagation of electromagnetic wave and have been applied to a wide range of electromagnetic devices design. In this paper, a double-sided printed dipole (DSPD) array backed by an EBG reflector is proposed for achieving a low-profile design as well as gain enhancement. Simulation results show that a reduction of more than 55% in antenna height can be obtained by placing the DSPD array over an EBG reflector rather than a perfect electric conductor (PEC) reflector. And the obtained gain of the antenna with an EBG reflector is about 1.9 dB higher than that with a PEC reflector at the operating frequency 2.77 GHz. The EBG reflector can be utilized to reduce a cavity-backed antenna height and enhance the antenna radiation efficiency. The design has a good potential application to antenna arrays with more elements in wireless communication.     

Theoretical and experimental responsivity of fir antenna coupled metal-insulator-metal detectors

In this work we report a complete theory of the metal-insulator-metal, antenna coupled, mm and sub-mm detectors. The voltage-power responsivity is simply derived from the geometrical antenna proprieties and the electrical junction characteristics. The calculated responsivity simply foresees our experimental results in the sub-mm — mm range and well fits all the previously reported data