In this study, electrical characteristics of the Sn/
p-type Si (MS) Schottky diodes have been investigated by current-voltage (
I-
V) and capacitance-voltage (
C-
V) measurements at room temperature. The barrier height obtained from
C-
V measurement is higher than obtained from
I-
V measurement and this discrepancy can be explained by introducing a spatial distribution of barrier heights due to barrier height inhomogeneities, which are available at the nanostructure Sn/
p-Si interface. A modified Norde’s function combined with conventional forward
I-
V method was used to extract the parameters including barrier height (Φ
b) and the series resistance (
RS). The barrier height and series resistance obtained from Norde’s function was compared with those from Cheung functions. In addition, the interface-state density (
NSS) as a function of energy distribution (
ESS-
EV) was extracted from the forward-bias
I-
V measurements by taking into account the bias dependence of the effective barrier height (Φ
b) and series resistance (
RS) for the Schottky diodes. While the interface-state density (
NSS) calculated without taking into account series resistance (
RS) has increased exponentially with bias from 4.235 × 10
12 cm
−2eV
−1 in (
ESS - 0.62) eV to 2.371 × 10
13 cm
−2eV
−1 in (
ESS - 0.39) eV of
p-Si, the
NSS obtained taking into account the series resistance has increased exponentially with bias from of 4.235 × 10
12 to 1.671 × 10
13 cm
−2eV
−1 in the same interval. This behaviour is attributed to the passivation of the
p-doped Si surface with the presence of thin interfacial insulator layer between the metal and semiconductor.
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