Template-grown NiFe/Cu/NiFe nanowires for spin transfer devices

We have developed a new reliable method combining template synthesis and nanolithography-based contacting technique to elaborate current perpendicular-to-plane giant magnetoresistance spin valve nanowires, which are very promising for the exploration of electrical spin transfer phenomena. The method allows the electrical connection of one single nanowire in a large assembly of wires embedded in anodic porous alumina supported on Si substrate with diameters and periodicities to be controllable to a large extent. Both magnetic excitations and switching phenomena driven by a spin-polarized current were clearly demonstrated in our electrodeposited NiFe/Cu/ NiFe trilayer nanowires. This novel approach promises to be of strong interest for subsequent fabrication of phase-locked arrays of spin transfer nano-oscillators with increased output power for microwave applications.     

Spin transport in self assembled all-metal nanowire spin valves: a study of the pure Elliott-Yafet mechanism

We report experimental study of spin transport in all metal nanowire spin valve structures. The nanowires have a diameter of 50 nm and consist of three layers--cobalt, copper, and nickel. Based on the experimental observations, we determine that the primary spin relaxation mechanism in the paramagnet layer--copper--is the Elliott-Yafet mode associated with elastic scattering caused by charged states on the surface of the nanowires. This mode is overwhelmingly dominant over all other modes, so that we are able to study the pure Elliott-Yafet mechanism in isolation. We deduce that the spin diffusion length associated with this mechanism is about 16 nm in our nanowires and is fairly temperature independent in the range 1-100 K, which is consistent with the spin relaxation being associated with elastic scattering by surface states. The corresponding spin relaxation time is about 100 femtoseconds. We also find that the spin relaxation rate is fairly independent of the electric field driving the current in the field range 0.3-3 kV/cm.     

Electronic transmission and switch effect in kappa-component Fibonacci nanowires

We present the electronic transport in the k-component Fibonacci (KCF) nanowires, in which kappa different incommensurate intervals are arranged according to a substitution rule. For the KCF nanowires with an identical kappa, by increasing the length of the nanowire, the minima in transmission extend gradually into the band gap over which the transmission is blocked. Meanwhile more transmission peaks appear. For finite KCF nanowire, by increasing the number of different incommensurate intervals kappa, the width of electronic band gap is enlarged. Moreover, when the value of kappa is sufficiently large, the transmission is shut off, except at a few resonant energies. These properties make it possible to use the KCF nanowires as switching devices. Furthermore, a dimensional spectrum of singularities associated with the transmission spectrum demonstrates that the electronic propagation in the KCF nanowire shows multifractality. These investigations open a unique way to control quantum transport in nanodevices.     

Precise in situ tuning of the critical current of a superconducting nanowire using high bias voltage pulses

We present a method for in situ tuning of the critical current (or switching current) and critical temperature of a superconducting MoGe nanowire using high bias voltage pulses. Our main finding is that as the pulse voltage is increased, the nanowire demonstrates a reduction, a minimum and then an enhancement of the switching current and critical temperature. Using controlled pulsing, the switching current of a superconducting nanowire can be set exactly to a desired value. These results correlate with in situ transmission electron microscope imaging where an initially amorphous nanowire transforms into a single crystal nanowire by high bias voltage pulses. We compare our transport measurements to a thermally activated model of Little's phase slips in nanowires.     

Discrete domain wall positioning due to pinning in current driven motion along nanowires

Racetrack memory is a novel storage-class memory device in which a series of domain walls (DWs), representing zeros and ones, are shifted to and fro by current pulses along magnetic nanowires. Here we show, by precise measurements of the DW's position using spin-valve nanowires, that these positions take up discrete values. This results from DW relaxation after the end of the current pulse into local energy minima, likely derived from imperfections in the nanowire.     

Domain wall types and field-induced domain wall motion in L-shaped nanowires

The formation and behavior of domain walls were studied in L-shaped nanowires via micro-magnetic simulation using the Objective Oriented Micro-Magnetic Frame program. We induced three types of domain walls by varying the thickness of the nanowire. A transverse wall, an asymmetric transverse wall, and a vortex wall were induced in 10, 20, and 40 nm-thick nanowires, respectively. The type of domain walls formed was determined by the competition between exchange and magnetostatic energy. The depinning field of the domain wall was the largest for the 20 nm-thick and the smallest for the 10 nm-thick nanowires. Domain wall behaviors were quite different from one another. The transverse wall in the 10 nm-thick nanowire was annihilated without changing its type. In the case of the 40 nm-thick nanowire, the vortex wall was not transformed to another type, but did switch its polarity throughout the depinning process. The wall in the 20 nm-thick nanowire underwent repetitions of the transformation of type and the switching of polarity until annihilation. Our results confirm that the behavior of a domain wall at a corner or a rounded part of nanowires is very complex and it originates from the different spin structures of a domain wall.     

Nanowire spintronics for storage class memories and logic

Patterned magnetic nanowires are extremely well suited for data storage and logic devices. They offer non-volatile storage, fast switching times, efficient operation and a bistable magnetic configuration that are convenient for representing digital information. Key to this is the high level of control that is possible over the position and behaviour of domain walls (DWs) in magnetic nanowires. Magnetic random access memory based on the propagation of DWs in nanowires has been released commercially, while more dynamic shift register memory and logic circuits have been demonstrated. Here, we discuss the present standing of this technology as well as reviewing some of the basic DW effects that have been observed and the underlying physics of DW motion. We also discuss the future direction of magnetic nanowire technology to look at possible developments, hurdles to overcome and what nanowire devices may appear in the future, both in classical information technology and beyond into quantum computation and biology.     

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires

Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states. Using rate equation modeling, we show that, at the lowest energies, strongly nonequilibrium spin distributions are present and we estimate their spin relaxation rate.     

Bipolar Resistive Switching of Single Gold-in-Ga(2)O(3) Nanowire

We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.     

Robust Room-Temperature Ferromagnetism with Giant Anisotropy in Nd-Doped ZnO Nanowire Arrays

As an important class of spintronic material, ferromagnetic oxide semiconductors are characterized with both charge and spin degrees of freedom, but they often show weak magnetism and small coercivity, which limit their applications. In this work, we synthesized Nd-doped ZnO nanowire arrays which exhibit stable room temperature ferromagnetism with a large saturation magnetic moment of 4.1 μ(B)/Nd as well as a high coercivity of 780 Oe, indicating giant magnetic anisotropy. First-principles calculations reveal that the remarkable magnetic properties in Nd-doped ZnO nanowires can be ascribed to the intricate interplay between the spin moments and the Nd-derived orbital moments. Our complementary experimental and theoretical results suggest that these magnetic oxide nanowires obtained by the bottom-up synthesis are promising as nanoscale building blocks in spintronic devices.     

Photosensitive gold-nanoparticle-embedded dielectric nanowires

Noble-metal nanoparticles embedded in dielectric matrices are considered to have practical applications in ultrafast all-optical switching devices owing to their enhanced third-order nonlinear susceptibility, especially near the surface-plasmon-resonance (SPR) frequency. Here we present the use of a microreactor approach to the fabrication of a self-organized photosensitive gold nanoparticle chain encapsulated in a dielectric nanowire. Such a hybrid nanowire shows pronounced SPR absorption. More remarkably, a strong wavelength-dependent and reversible photoresponse has been demonstrated in a two-terminal device using an ensemble of gold nanopeapodded silica nanowires under light illumination, whereas no photoresponse was observed for the plain silica nanowires. These results show the potential of using gold nanopeapodded silica nanowires as wavelength-controlled optical nanoswitches. The microreactor approach can be applied to the preparation of a range of hybrid metal-dielectric one-dimensional nanostructures that can be used as functional building blocks for nanoscale waveguiding devices, sensors and optoelectronics.     

Versatile method for manipulating and contacting nanowires

We present a simple, non-lithographic method for electrically connecting nanowires with electrodes on planar as well as non-planar microsystems. A rigid nanowire is used as a local shadow mask during deposition of metal contacts, which we use to contact structures of widely different conductances: Multiwalled carbon nanotubes, para-hexaphenylene nanofibers, as well as indium arsenide and indium phosphide nanowires. Finally we demonstrate how the method can be extended to different electrode materials on each side of the electrode gap, as well as for investigation of the electromechanical properties of a nanowire integrated in a cantilever.     

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limitation, because the most abundant nuclei in Ge and Si have spin zero and the nanowires can be chemically synthesized defect-free with tunable properties. Here, we present a double quantum dot based on Ge/Si nanowires in which we can completely control the coupling between the dots and to the leads. We also demonstrate that charge on the double dot can be detected by coupling it capacitively to an adjacent nanowire quantum dot. The double quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit free of nuclear spin.     

Statistical study of effective anisotropy field in ordered ferromagnetic nanowire arrays

Soft ferromagnetic nanowire arrays were obtained by electrodeposition of Co-Fe-P alloy into the pores of high quality home-made anodized aluminum oxide (AAO) templates. Bath acidity and current density were the two parameters used in order to tailor the orientation of local anisotropy axes in individual nanowires. In order to quantify the influence of the induced anisotropies on the magnetization processes in individual nanowires, the in-plane magnetization loops of the arrays are modeled as log-normal distributions of Stoner-Wohlfarth transverse magnetization processes. Using the lognormal mean parameter as an approximation for the saturation applied field of the array, we compute the effective anisotropy of the nanowires, which is found to increase with the pH of the electrodeposition bath.     

Directional and dynamic modulation of the optical emission of an individual GaAs nanowire using surface acoustic waves

We report on optical experiments performed on individual GaAs nanowires and the manipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for the surface acoustic wave propagation aligned with the axis of the nanowire. Furthermore, we demonstrate that this quenching is dynamical as it shows a pronounced modulation as the local phase of the surface acoustic wave is tuned. These effects are strongly reduced for a surface acoustic wave applied in the direction perpendicular to the axis of the nanowire due to their inherent one-dimensional geometry. We resolve a fully dynamic modulation of the nanowire emission up to 678 MHz not limited by the physical properties of the nanowires.     

In situ nanomechanics of GaN nanowires

The deformation, fracture mechanisms, and the fracture strength of individual GaN nanowires were measured in real time using a transmission electron microscope-scanning probe microscope (TEM-SPM) platform. Surface mediated plasticity, such as dislocation nucleation from a free surface and plastic deformation between the SPM probe (the punch) and the nanowire contact surface were observed in situ. Although local plasticity was observed frequently, global plasticity was not observed, indicating the overall brittle nature of this material. Dislocation nucleation and propagation is a precursor before the fracture event, but the fracture surface shows brittle characteristic. The fracture surface is not straight but kinked at (10-10) or (10-11) planes. Dislocations are generated at a stress near the fracture strength of the nanowire, which ranges from 0.21 to 1.76 GPa. The results assess the mechanical properties of GaN nanowires and may provide important insight into the design of GaN nanowire devices for electronic and optoelectronic applications.     

Precise Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here, we present a single nanowire manipulation system to precisely maneuver and align individual nanowires. We show that a single nanowire can be picked up and transferred to a predefined location by electrostatic force. Compatible fabrication processes have been developed to simultaneously pattern multiple aligned nanowires by using one level of photolithography. In addition, we have fabricated and characterized representative devices and test structures including nanoelectromechanical switches with large on/off current ratios, bottom-gated silicon nanowire field-effect transistors, and both transfer-length-method and Kelvin test structures     

From InSb nanowires to nanocubes: looking for the sweet spot

High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 10(4) cm(2) V(-1) s(-1) enable the realization of complex spintronic and topological devices.     

Attenuation of protein adsorption on static and oscillating magnetostrictive nanowires

The research described here investigates the hypothesis that nanoarchitecture contained in a nanowire array is capable of attenuating the adverse host response generated when medical devices are implanted in the body. This adverse host response, or biofouling, generates an avascular fibrous mass transfer barrier between the device and the analyte of interest, disabling the implant if it is a sensor. Numerous studies have indicated that surface chemistry and architecture modulate the host response. These findings led us to hypothesize that nanostructured surfaces will inhibit the formation of an avascular fibrous capsule significantly. We are investigating whether arrays of oscillating magnetostrictive nanowires can prevent protein adsorption. Magnetostrictive nanowires were fabricated by electroplating a ferromagnetic metal alloy into the pores of a nanoporous alumina template. The ferromagnetic nanowires are made to oscillate by oscillating the magnetic field surrounding the wires. Radiolabeled bovine serum albumin, enzyme-linked immunosorbent assay (ELISA), and other protein assays were used to study protein adhesion on the nanowire arrays. These results display a reduced protein adsorption per surface area of static nanowires. Comparing the surfaces, 14-30% of the protein that absorbed on the flat surface adsorbed on the nanowires. Our contact angle measurements indicate that the attenuation of protein on the nanowire surface might be due to the increased hydrophilicity of the nanostructured surface compared to a flat surface of the same material. We oscillated the magnetostrictive wires by placing them in a 38 G 10 Hz oscillating magnetic field. The oscillating nanowires show a further reduction in protein adhesion where only 7-67% of the protein on the static wires was measured on the oscillating nanowires. By varying the viscosity of the fluid the nanowires are oscillated in, we determined that protein detachment is shear-stress modulated. We created a high shearing fluid with dextran, which reduced protein adsorption on the oscillating nanowires by 70% over nanowires oscillating in baseline viscosity fluid. Our preliminary studies strongly suggest that the architecture in the static nanowire arrays and the shear created by oscillating the nanowire arrays would attenuate the biofouling response in vivo.     

Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices

We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heterostructure has an atomically sharp interface with epitaxial relationships of Si[110]//PtSi[010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities approximately 28.6 microOmega.cm and high breakdown current densities>1x10(8) A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/microm, field-effect hole mobility of 168 cm2/V.s, and on/off ratio>10(7), demonstrating the best performing device from intrinsic silicon nanowires.