A 14b 150 MS/s 140 mW 2.0 mm2 0.13µm CMOS A/D converter for software‐defined radio systems

This work proposes a 14 b 150 MS/s CMOS A/D converters (ADC) for software‐defined radio systems requiring simultaneously high‐resolution, low‐power, and small chip area at high speed. The proposed calibration‐free ADC employs a wide‐band low‐noise input sample‐and‐hold amplifier (SHA) along with a four‐stage pipelined architecture optimizing scaling‐down factors for the sampling capacitance and the input trans‐conductance of amplifiers in each stage to minimize thermal noise effect and power consumption. A signal‐insensitive 3‐D fully symmetric layout achieves a 14 b level resolution by reducing a capacitor mismatch of three MDACs. The prototype ADC in a 0.13µm 1P8M CMOS technology demonstrates a measured differential nonlinearity (DNL) and integral nonlinearity within 0.81LSB and 2.83LSB at 14 b, respectively. The ADC shows a maximum signal‐to‐noise‐and‐distortion ratio of 64 and 61 dB and a maximum spurious‐free dynamic range of 71 and 70 dB at 120 and 150 MS/s, respectively. The ADC with an active die area of 2.0mm² consumes 140 mW at 150 MS/s and 1.2 V. Copyright © 2010 John Wiley & Sons, Ltd.     

A low‐power small‐area 10‐bit analog‐to‐digital converter for neural recording applications

In vivo neural recording systems require low power and small area, which are the most important parameters in such systems. This paper reports a new architecture for reducing the power dissipation and area, in analog‐to‐digital converters (ADCs). A time‐based approach is used for the subtraction and amplification in conjunction with a current‐mode algorithm and cyclical stage, which the conversion reuses a single stage for three times, to perform analog‐to‐digital conversion. Based on introduced structure, a 10‐bit 100‐kSample/s time‐based cyclical ADC has been designed and simulated in a standard 90‐nm Complementary Metal Oxide Semiconductor (CMOS) process. Design of the system‐level architecture and the circuits was driven by stringent power constraints for small implantable devices. Simulation results show that the ADC achieves a peak signal‐to‐noise and distortion ratio (SNDR) of 59.6 dB, an effective number of bits (ENOB) of 9.6, a total harmonic distortion (THD) of ?64dB, and a peak integral nonlinearity (INL) of 0.55, related to the least significant bit (LSB). The ADC active area occupies 280µm × 250µm. The total power dissipation is 5µW per conversion stage and 20µW from an 1.2‐V supply for full‐scale conversion. Copyright © 2010 John Wiley & Sons, Ltd.     

A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

This paper presents a high resolution time‐to‐digital converter (TDC) for low‐area applications. To achieve both high resolution and low circuit area, we propose a dual‐slope voltage‐domain TDC, which is composed of a time‐to‐voltage converter (TVC) and an analog‐to‐digital converter (ADC). In the TVC, a current source and a capacitor are used to make the circuit as simple as possible. For the same reason, a single‐slope ADC, which is commonly used for compact area ADC applications, is adapted and optimized. Because the main non‐linearity occurs in the current source of the TVC and the ramp generator of the ADC, a double gain‐boosting current source is applied to overcome the low output impedance of the current source in the sub‐100‐nm CMOS process. The prototype TDC is implemented using a 65‐nm CMOS process, and occupies only 0.008 mm². The measurement result shows a dynamic range with an 8‐bit 8.86‐ps resolution and an integrated non‐linearity of ±1.25 LSB. Copyright © 2016 John Wiley & Sons, Ltd.     

A 7.5‐μW 0.08‐mm2 single‐ended SC delta‐sigma ADC for acoustic sensor applications

This study presents an ultra‐low‐power, small‐size, 1‐bit, single‐ended, and switched‐capacitor (SC) delta‐sigma analog‐to‐digital converter (ADC) for wireless acoustic sensor nodes. This wireless sensor node has a delta‐sigma ADC that converts the sensed signal to a digital signal for convenient data processing and emphasizes the features of small size and low‐power consumption. The chip area of the delta‐sigma ADC is dominated by the capacitor; therefore, a novel common‐mode (CM) controlling technique with only transistors is proposed. This ADC achieves an extremely small size of 0.08 mm² in a 130‐nm CMOS process. The conventional operational transconductance amplifiers (OTAs) are replaced by inverters in the weak inversion region to achieve high power efficiency. At 4‐MHz sampling frequency and 0.7‐V power supply voltage, the delta‐sigma ADC achieves a 55.8‐dB signal‐to‐noise‐plus‐distortion ratio (SNDR) and a 298‐fJ/step figure‐of‐merit (FOM) in a signal bandwidth of 25 kHz, while consuming only 7.5 μW of power. Copyright © 2015 John Wiley & Sons, Ltd.     

A 1.2 V 83 dB DR single‐ended input SC ΔΣ modulator including a large‐swing analog buffer for portable ECG applications

This study proposes a subsystem consisting of an analog buffer and a single‐ended input to a fully differential ΔΣ modulator to obtain low‐power consumption for portable electrocardiogram applications. With the proposed subsystem, the need for an inverting amplifier is avoided, and low‐power consumption is achieved. The ΔΣ modulator with a second order, 1 bit, and cascade of integrators feedforward structure consumes a low power, in which an inverting and a non‐inverting path implement a single‐ended input to fully‐differential signals. A double sampling technique is proposed for a digital‐to‐analog converter feedback circuit to reduce the effect of the reference voltage, reduce the amplifier requirements, and obtain low‐power consumption. Input‐bias and output‐bias transistors working in the weak‐inversion region are implemented to obtain an extremely large swing for the analog buffer. At a supply voltage of 1.2 V, signal bandwidth of 250 Hz, and sampling frequency of 128 kHz, the measurement results show that the modulator with a buffer achieves a 77 dB peak signal‐to‐noise‐distortion ratio, an effective‐number‐of‐bits of 12.5 bits, an 83 dB dynamic range, and a figure‐of‐merit of 156 dB. The total chip size is approximately 0.28 mm² with a standard 0.13 µm Complementary Metal‐Oxide‐Silicon (CMOS) process. Copyright © 2016 John Wiley & Sons, Ltd.     

A new two‐step single slope A/D converter for using in CMOS image sensors

This paper presents a high‐speed, high‐resolution column parallel analog‐to‐digital converter (ADC) with global digital error correction. Proposed A/D converter is suitable for using in high‐frame‐rate complementary metal–oxide–semiconductor (CMOS) image sensors. This new method has more advantages than conventional ramp ADC from viewpoint of speed and resolution. A prototype 11‐bit ADC is designed in 0.25‐µm CMOS technology. Moreover, an overall signal‐to‐noise ratio of 63.8 dB can be achieved at 0.5Msample/s. The power dissipation of all 320 column‐parallel ADCs with the peripheral circuits consume 76 mW at 2.5‐V supplies. Copyright © 2012 John Wiley & Sons, Ltd.     

A 9‐bit successive approximation ADC in SOI CMOS operating up to 300 °C

Industrial electronics are in great demand for oil and gas exploration, well drilling, and automotive applications where the operating temperature goes beyond 200 °C. Circuit designs using conventional complementary metal–oxide semiconductor (CMOS) technology are mostly rated at maximum of 125 °C, which is not suitable for harsh environment. In this paper, a high‐temperature (HT) 9‐bit successive approximation register analog‐to‐digital converter (SAR ADC) designed in silicon‐on‐insolation CMOS technology with a sampling rate of 50 kS/s is presented. The design considerations of the HT SAR ADC are discussed from process selection, temperature‐aware circuit design, and measurement perspectives. The ADC achieves an effective number of bit (ENOB) of 8.35 bits and a figure of merit of 93 pJ/step at room temperature. Under HT test, ENOBs of 7.3 bits at 225 °C and 6.9 bits at 300 °C are obtained. The power consumption is 1.52 mW from a 5‐V supply at room temperature and only 2.17 mW at 300 °C. Copyright © 2015 John Wiley & Sons, Ltd.     

A power‐area‐efficient, 3‐band, 2‐RX MIMO,TD‐LTE receiver with direct‐coupled ADC

In this work, a power‐area‐efficient, 3‐band, 2‐RX MIMO, and TD‐LTE (backward compatible with the HSPA+, HSUPA, HSDPA, and TD‐SCDMA) CMOS receiver is presented and implemented in 0.13‐μm CMOS technology. The continuous‐time delta‐sigma A/D converters (CT ?Σ ADCs) are directly coupled to the outputs of the transimpedance amplifiers, eliminating the need of analog anti‐aliasing filters between RX front‐end and ADCs in conventional structures. The strong adjacent channel interference without low‐pass filter attenuation is handled by proper gain control. A low‐power small‐area solution for excess loop delay compensation is implemented in the CT ?Σ ADC. At 20 MHz bandwidth, the CT ?Σ ADC achieves 66 dB dynamic range and 3.5 dB RX chip noise figure is measured. A maximum of 2.4 dB signal‐to‐noise ratio degradation is measured in all the adjacent channel selectivity (ACS) and blocking tests, demonstrating the effectiveness of the strategy against the low‐pass filter removal from the conventional architecture. The receiver dissipates a maximum of 171 mW at 2‐RX MIMO mode. To our best knowledge, it is the first research paper on the design of fully integrated commercial TD‐LTE receiver. Copyright © 2014 John Wiley & Sons, Ltd.     

A 12‐bit 10‐MS/s SAR ADC with a binary‐window DAC switching scheme in 180‐nm CMOS

This paper presents an energy‐efficient 12‐bit successive approximation‐register A/D converter (ADC). The D/A converter (DAC) plays a crucial role in ADC linearity, which can be enhanced by using larger capacitor arrays. The binary‐window DAC switching scheme proposed in this paper effectively reduces DAC nonlinearity and switching errors to improve both the spurious‐free dynamic range and signal‐to‐noise‐and‐distortion ratio. The ADC prototype occupies an active area of 0.12 mm² in the 0.18‐μm CMOS process and consumes a total power of 0.6 mW from a 1.5‐V supply. The measured peak differential nonlinearity and integral nonlinearity are 0.57 and 0.73 least significant bit, respectively. The ADC achieves a 64.7‐dB signal‐to‐noise‐and‐distortion ratio and 83‐dB spurious‐free dynamic range at a sampling rate of 10 MS/s, corresponding to a peak figure‐of‐merit of 43 fJ/conversion‐step.     

A 120–420 MHz delay‐locked loop with multi‐band voltage‐controlled delay unit

A low‐jitter and low‐power dissipation delay‐locked loop (DLL) is presented. A proposed multi‐band voltage control delay unit (MVCDU) is employed to extend the operation frequency of the DLL by controlling the delay cell within the MVCDU. The jitter of DLL is reduced due to MVCDU's low sensitivity. The delay cell in the MVCDU employs a differential configuration to further reduce the noise impact from the fluctuation in the supply and ground voltage. The operating frequency of the proposed DLL ranges from 120 to 420 MHz. The proposed design has been fabricated in a TSMC 0.18µm CMOS process. The measured RMS and peak‐to‐peak jitters are 4.86 and 34.55 ps, respectively, at an operating frequency of 300 MHz. The power dissipation is below 14.85 mW at an operating frequency of 420 MHz. Copyright © 2010 John Wiley & Sons, Ltd.     

A 12‐bit multi‐channel dual‐mode successive approximation ADC for power management bus (Pmbus) devices

In this paper, a 12‐bit multi‐channel dual‐mode successive approximation ADC for PMBus devices is newly proposed. The proposed data converter is attractive because all the requirements of PMBus devices, which are high resolution, low‐cost, dual‐mode, and multi‐channel, are successfully matched. In measurement results, all the functions and performance of the proposed data converter are successfully verified and confirmed to be applied on PMBus devices. The area of this chip is 1.64 × 1.56 mm², and the measured power consumption including digital output buffers is 1.683 mW. The proposed 12‐bit multi‐channel dual‐mode successive approximation ADC is suitable for power monitoring systems, such as PMBus devices. Copyright © 2011 John Wiley & Sons, Ltd.     

A 0.6 V, 2.11 MHz, 62 dB SFDR active‐RC filter in 0.13µm CMOS process

Active‐RC biquad is proposed, which allows the DC level of the input of operational amplifier (op‐amp) to be different from that of the op‐amp output, enabling the low‐voltage operation. The proposed biquad realizes a second‐order transfer function with only one op‐amp, rendering even lower power consumption. By cascading two biquads, a 0.6 V fourth‐order filter is realized in a 0.13µm CMOS technology. While dissipating only 0.42 mW, the filter shows 2.11 MHz cut‐off frequency and 62 dB spurious‐free dynamic range. Copyright © 2008 John Wiley & Sons, Ltd.     

±0.18‐V supply voltage gate‐driven PGA with 0.7‐Hz to 2‐kHz constant bandwidth and 0.15‐μW power dissipation

A simple gate‐driven scheme to reduce the minimum supply voltage of AC coupled amplifiers by close to a factor of two is introduced. The inclusion of a floating battery in the feedback loop allows both input terminals of the op‐amp to operate very close to a supply rail. This reduces essentially supply requirements. The scheme is verified experimentally with the example of a PGA that operates with ±0.18‐V supply voltages in 0.18‐μm CMOS technology and a power dissipation of about 0.15 μW. It has a 4‐bit digitally programmable gain and 0.7‐Hz to 2‐kHz true constant bandwidth that is independent on gain with a 25‐pF load capacitor. In addition, simulations of the same circuit in 0.13‐μm CMOS technology show that the proposed scheme allows operation with ±0.08‐V supplies, 7.5‐Hz to 8‐kHz true constant bandwidth with a 25‐pF load capacitor, and a total power dissipation of 0.07 μW.     

A 40 M–1000 MHz 77.2‐dB spurious free dynamic range CMOS RF variable gain amplifier for digital TV tuner ICs

In this paper, a 40 M–1000 MHz 77.2‐dB spurious free dynamic range (SFDR) CMOS RF variable gain amplifier (VGA) has been presented for digital TV tuner applications. The proposed RFVGA adopts a wideband operational‐amplifier‐based VGA and a wideband buffer with differential multiple gated transistor linearization method for wideband operation and high linearity. The SFDR of the proposed RFVGA is also analyzed in detail. Fabricated in a 0.13‐µm CMOS process, the RFVGA provides 31‐dB gain range with 1‐dB gain step, a minimum noise figure of 7.5 dB at a maximum gain of 27 dB, and maximum in‐band output‐referred third‐order intercept point of 27.7 dBm, while drawing an average current of 27.8 mA with a supply voltage of 3.3 V. The chip core area is 0.54 mm × 0.4 mm. Copyright © 2014 John Wiley & Sons, Ltd.     

Low power switched‐current circuits with low sensitivity to the rise/fall time of the clock

The switched‐current (SI) technique permits realizing analog discrete‐time circuits in standard digital CMOS technology. A very important property of the analog part of a system on a chip is the possibility it offers for realizing some functions of a digital circuit, but with reduced power consumption. In this paper, a low power SI integrator is presented. It is shown that an integrator consuming a fraction of a milliwatt can be designed in 0.35µm CMOS technology with the use of narrow transistor channels, and with the channel length as a design parameter. The impact of the rise/fall time of the clock signal on the integrator operation is observed. It is shown that this effect can be reduced when the proper switch dimensions are taken for the integrator. Analysis and measurements of the integrator noise are presented. The integrator was built with equal size transistors, yielding less sensitivity to variations in production parameters. An experimental chip in 0.35µm CMOS technology was fabricated, and measurements are compared with results obtained during analysis and simulations. In order to verify the properties of the designed integrator experimentally, a first‐order filter is built with the use of elementary cells on the chip. Copyright © 2008 John Wiley & Sons, Ltd.     

A 6th‐order 75 dB‐DR 10.7 MHz 3.3 V CMOS bandpass ΣΔ modulator sampled at 37.05 MHz

This paper describes the design and the implementation of a 6th‐order bandpass ΣΔ modulator to be used for IF digitizing at 10.7 MHz of a broadcasting FM radio signal. The modulator is sampled at 37.05 MHz. This sampling frequency value allows to optimize both modulator and overall receiver channel performance. The modulator has been implemented in a standard double‐poly 0.35 µm CMOS technology using switched capacitor (SC) technique and consumes 116 mW from a single 3.3 V power supply. The modulator features 75 dB dynamic range and 66 dB peak‐SNR within a 200 kHz bandwidth (FM bandwidth). Third‐order intermodulation products are suppressed by –78dBc. Copyright © 2004 John Wiley & Sons, Ltd.     

A 5‐GHz energy‐efficient tunable pulse generator for ultra‐wideband applications using a variable attenuator for pulse shaping

A new energy‐efficient tunable pulse generator is presented in this paper using 0.13‐µm CMOS technology for short‐range high‐data‐rate 3.1–10.6 GHz ultra‐wideband applications. A ring oscillator consisting of current‐starved CMOS inverters is quickly switched on and off for the duration of the pulse, and the amplitude envelope is shaped with a variable passive CMOS attenuator. The variable passive attenuator is controlled using an impulse that is created by a low‐power glitch generator (CMOS NOR gate). The glitch generator combines the falling edge of the clock and its delayed inverse, allowing the duration of the impulse to be changed over a wide range (500–900 ps) by varying the delay between the edges. The pulses generated with this technique can provide a sharp frequency roll off with high out‐of‐band rejection to help meet the Federal Communications Commission mask. The entire circuit operates in switched mode with a low average power consumption of less than 3.8 mW at 910 MHz pulse repetition frequency or below 4.2 pJ of energy per pulse. It occupies a total area of 725 × 600 µm² including bonding pads and decoupling capacitors, and the active circuit area is only 360 × 200 µm². Copyright © 2011 John Wiley & Sons, Ltd.     

Output‐capacitorless segmented low‐dropout voltage regulator with controlled pass transistors

This article presents a low quiescent current output‐capacitorless quasi‐digital complementary metal‐oxide‐semiconductor (CMOS) low‐dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade‐off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post‐simulated in HSPICE in a 0.18 µm CMOS process to supply a stable load current between 0 and 100 mA with a 40 pF on‐chip output capacitor, while consuming 4.8 μA quiescent current. The dropout voltage of the LDO is set to 200 mV for 1.8 V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively. Copyright © 2015 John Wiley & Sons, Ltd.     

FFT‐based calibration method for 1.5 bit/stage pipelined ADCs

A fast Fourier transform (FFT)‐based digital calibration method for 1.5 bit/stage pipeline analog‐to‐digital converter (ADC) is proposed in this paper. Capacitor mismatch and finite gain of the operational amplifier (OPAMP) can be overcome by the proposed calibration method. Given that the capacitor mismatch and the finite OPAMP gain cause the radix of all the stages of 1.5 bit/stage pipeline ADC to become unequal to 2, the FFT processor can be adopted to evaluate the actual radixes of all the stages and then generate new digital output to compensate for error caused by these non‐ideal effects. Moreover, as capacitor mismatch and the finite gain of OPAMP can be compensated, low‐gain OPAMP can be used in high‐performance ADC to reduce power dissipation; a small capacitor can then be adopted to save on space. An example of a 10 bit 1.5 bit/stage pipelined ADC with only an 8 bit circuit performance is implemented in 0.18 µm TSMC CMOS process. Circuit measurement result reveals that the signal‐to‐noise‐and‐distortion ratio of 51.03 dB with 11 dB improvement after calibration can be achieved at the sample rate of 1 MHz. Copyright © 2013 John Wiley & Sons, Ltd.     

Representation,methods, and circuits for time‐based conversion and computation

In this paper, we present an efficient representation of the analog signal using the inter‐pulse interval (IPI) time. Based on this representation, methods and circuits for conversion and computation have been developed. To validate these methods and circuits, a test chip has been fabricated using a 0.35µm mixed‐signal CMOS process. Together, the circuits occupy 59.52 × 10^?3mm² of chip area and consume 8.8 mW of power from a 3.2 V supply. Test results at 10 MHz and simulations results at 100 MHz show good accuracy over ±600mV range. Copyright © 2010 John Wiley & Sons, Ltd.